ART35FE

Based on Advanced Rugged Technology (ART), this 35 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz.

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ART1K6PH

Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.

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ART700FH

Based on Advanced Rugged Technology (ART), this 700 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and non cellular communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.

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ART1K9FH

Based on Advanced Rugged Technology (ART), this 1900 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 500 MHz.

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ART800PE

Based on Advanced Rugged Technology (ART), this 800 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz.

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ART450FE

Based on Advanced Rugged Technology (ART), this 450 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz.

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ART1K6FH

Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 425 MHz.

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ART2K0PE

Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.

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ART150PE

Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz

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ART150FE

Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor hasbeen designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz.

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ART2K0FE

Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

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ART2K0PEG

Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.

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ART2K0FEG

Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

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ART1K6PHG

Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.

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ART800PEG

Based on Advanced Rugged Technology (ART), this 800 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz.

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ART700FHS

Based on Advanced Rugged Technology (ART), this 700 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and non cellular communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.

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ART700FHG

Based on Advanced Rugged Technology (ART), this 700 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and non cellular communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.

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ART1K6FHS

Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 425 MHz.

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ART1K6FHG

Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 425 MHz.

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ART2K5TPU

Based on Advanced Rugged Technology (ART), this 2500 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

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ART2K0FES

Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

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ART2K0TFE

Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

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ART150PEG

Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz

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ART2K5TFUS

Based on Advanced Rugged Technology (ART), this 2500 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

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ART2K5TFUG

Based on Advanced Rugged Technology (ART), this 2500 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

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ART2K0TFES

Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

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ART2K0TFEG

Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

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BLM6G22-30

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BLM6G10-30

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BLD6G21L-50

The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution using Ampleon’s state of the art GEN6 LDMOS technology. This device is perfectly suited for TD-SCDMA base station applications at frequencies from 2010 MHz to 2025 MHz. The main and peak device, input splitter and output combiner are integrated in a single package. This package consists of one gate and drain lead and two extra leads of which one is used for biasing the peak amplifier and the other is not connected. It only requires the proper input/output match and bias setting as with a normal class-AB transistor.

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BLD6G22L-50

The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using Ampleon’s state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequencies from 2110 MHz to 2170 MHz. The main and peak device, input splitter and output combiner are integrated in a single package. This package consists of one gate and drain lead and two extra leads of which one is used for biasing the peak amplifier and the other is not connected. It only requires the proper input/output match and bias setting as with a normal class-AB transistor.

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BLM6G22-30G

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BLM6G10-30G

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BLD6G21LS-50

The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution using Ampleon’s state of the art GEN6 LDMOS technology. This device is perfectly suited for TD-SCDMA base station applications at frequencies from 2010 MHz to 2025 MHz. The main and peak device, input splitter and output combiner are integrated in a single package. This package consists of one gate and drain lead and two extra leads of which one is used for biasing the peak amplifier and the other is not connected. It only requires the proper input/output match and bias setting as with a normal class-AB transistor.

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BLD6G22LS-50

The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using Ampleon’s state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequencies from 2110 MHz to 2170 MHz. The main and peak device, input splitter and output combiner are integrated in a single package. This package consists of one gate and drain lead and two extra leads of which one is used for biasing the peak amplifier and the other is not connected. It only requires the proper input/output match and bias setting as with a normal class-AB transistor.

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B10G2327N55D

The B10G2327N55D is a 2-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This device is perfectly suited as general purpose driver or mMIMO final in the frequency range from 2300 MHz to 2700 MHz. Available in PQFN outline.

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B11G1822N60D

The B11G1822N60D is a dual section 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range 1800 MHz to 2200 MHz. Available in PQFN outline.

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B11G2327N71D

The B11G2327N71D is a dual path 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as general purpose driver in the frequency range 2300 MHz to 2700 MHz. Available in PQFN outline.

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B11G3338N81D

The B11G3338N81D is a dual section 3-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range 3300 MHz to 3800 MHz. Available in PQFN outline.

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B11G2327N70D

The B11G2327N70D is a dual path 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as general purpose driver in the frequency range 2300 MHz to 2700 MHz. Available in PQFN outline.

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B11G3338N80D

The B11G3338N80D is a dual section 3-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range 3300 MHz to 3800 MHz. Available in PQFN outline.

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B11G3742N81D

The B11G3742N81D is a dual section 3-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range 3700 MHz to 4200 MHz. Available in PQFN outline.

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B10H0608N40D

The B10H0608N40D is a dual section 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art 50 V LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range 600 MHz to 800 MHz. Available in a 12 mm x 8 mm LGA outline.

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B10H0710N40D

The B10H0710N40D is a dual section 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art 50 V LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range 700 MHz to 1 GHz. Available in LGA outline.

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BLF13H9L750P

750 W LDMOS power transistor in SOT539 push pull package for accelerator applications at a frequency of 1.3 GHz.

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B11G2327N72D

The B11G2327N72D is a dual section 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range 2300 MHz to 2700 MHz. Available in PQFN outline.

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B10G3741N55D

The B10G3741N55D is a 3-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as a final stage for small cells and massive MIMO applications in the frequency range from 3700 MHz to 4100 MHz. Available in PQFN outline.

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B10G3438N55D

The B10G3438N55D is a 3-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as a final stage for small cells and massive MIMO applications in the frequency range from 3400 MHz to 3800 MHz. Available in PQFN outline.

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B10G2324N10DL

The B10G2324N10DL is a 2-stage 10 W fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner, and output matching are integrated in a single package. This multiband device is perfectly suited as a general-purpose device in the frequency range from 2300 MHz to 2400 MHz. Available in a 7 mm x 7 mm LGA outline.

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B10G2527N10DL

The B10G2527N10DL is a 2-stage 10 W fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner, and output matching are integrated in a single package. This multiband device is perfectly suited as a general-purpose device in the frequency range from 2500 MHz to 2700 MHz. Available in a 7 mm x 7 mm LGA outline.

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B10G1819N10DL

The B10G1819N10DL is a 2-stage 10 W fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner, and output matching are integrated in a single package. This multiband device is perfectly suited as a general-purpose device in the frequency range from 1805 MHz to 1880 MHz. Available in a 7 mm x 7 mm LGA outline.

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B10G2022N10DL

The B10G2022N10DL is a 2-stage 10 W fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner, and output matching are integrated in a single package. This multiband device is perfectly suited as a general-purpose device in the frequency range from 2110 MHz to 2170 MHz. Available in a 7 mm x 7 mm LGA outline.

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BLM7G22S-60PB

The BLM7G22S-60PB(G) is a dual path 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This device is perfectly suited as general purpose driver in the frequency range from 2100 MHz to 2200 MHz. Available in gull wing or flat lead outline.

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B10G3336N16DL

The B10G3336N16DL is a 3-stage 16 W fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner, and output matching are integrated in a single package. This multiband device is perfectly suited as a general-purpose device in the frequency range from 3300 MHz to 3600 MHz. Available in LGA outline.

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B10G4750N12DL

The B10G4750N12DL is a 3-stage 12 W fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner, and output matching are integrated in a single package. This multiband device is perfectly suited as a general purpose device in the frequency range from 4700 MHz to 5000 MHz. Available in LGA outline.

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BLM9D1822-30B

The BLM9D1822-30B is a 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1800 MHz to 2200 MHz. Available in PQFN outline.

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BLM9D2327-26B

The BLM9D2327-26B is a thermally enhanced 2-stage fully integrated MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 2300 MHz to 2700 MHz. Available in PQFN outline.

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BLF13H9LS750P

750 W LDMOS power transistor in SOT539 push pull package for accelerator applications at a frequency of 1.3 GHz.

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BLM9D2327-25B

The BLM9D2327-25B is a 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 2300 MHz to 2700 MHz. Available in PQFN outline.

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BLM7G24S-30BG

The BLM7G24S-30BG is a 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This device is perfectly suited as general purpose driver in the frequency range from 2100 MHz to 2400 MHz. Available in gull wing.

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BLM9D3842-16AM

The BLM9D3842-16AM is a 3-stage 16 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 3800 MHz to 4200 MHz. Available in LGA outline.

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BLM9D3437-12AM

The BLM9D3437-12AM is a 3-stage 12 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 3400 MHz to 3700 MHz. Available in LGA outline.

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BLM8AD22S-60ABG

The BLM8AD22S-60ABG is a dual section solution using Ampleon’s state of the art GEN8 LDMOS technology. It includes a 45 W 2-stage fully integrated Doherty MMIC in section A, and a 15 W, 2-stage MMIC in section B, allowing a 3-way 1:2:1 Doherty when both sections are externally combined. The carrier and peaking devices, input splitter and output combiner, of the 2-stage fully integrated Doherty MMIC of section A are integrated in package. This device is perfectly suited as final stage in massive MIMO or small cell applications in the frequency range from 2100 MHz to 2200 MHz. Available in gull wing.

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BLM9D2527-20AB

The BLM9D2527-20AB is a 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a final device in massive MIMO or small cell applications in the frequency range from 2500 MHz to 2700 MHz. Available in PQFN outline.

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BLM9D3438-16AM

The BLM9D3438-16AM is a 3-stage 16 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 3400 MHz to 3800 MHz. Available in LGA outline.

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BLM9D0708-05AM

The BLM9D0708-05AM is a 1-stage 5 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 728 MHz to 821 MHz. Available in LGA outline.

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BLM9D3336-14AM

The BLM9D3336-14AM is a 3-stage 14 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 3300 MHz to 3650 MHz. Available in LGA outline.

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BLM9D3740-16AM

The BLM9D3740-16AM is a 3-stage 16 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 3700 MHz to 4000 MHz. Available in LGA outline.

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BLM9D2325-20AB

The BLM9D2325-20AB is a 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a final device in massive MIMO or small cell applications in the frequency range from 2300 MHz to 2500 MHz. Available in PQFN outline.

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BLM7G22S-60PBG

The BLM7G22S-60PB(G) is a dual path 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This device is perfectly suited as general purpose driver in the frequency range from 2100 MHz to 2200 MHz. Available in gull wing or flat lead outline.

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BLM9D1920-08AM

The BLM9D1920-08AM is a 2-stage 8 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 1880 MHz to 2025 MHz. Available in LGA outline.

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BLM9D1819-08AM

The BLM9D1819-08AM is a 2-stage 8 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 1805 MHz to 1880 MHz. Available in LGA outline.

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BLM9D2324-08AM

The BLM9D2324-08AM is a 2-stage 8 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 2300 MHz to 2400 MHz. Available in LGA outline.

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BLM9D3336-12AM

The BLM9D3336-12AM is a 3-stage 12 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 3300 MHz to 3650 MHz. Available in LGA outline.

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BLM9D0910-05AM

The BLM9D0910-05AM is a 1-stage 5 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 859 MHz to 960 MHz. Available in LGA outline.

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BLM9D3538-12AM

The BLM9D3538-12AM is a 3-stage 12 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 3400 MHz to 3800 MHz. Available in LGA outline.

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BLM9D2022-08AM

The BLM9D2022-08AM is a 2-stage 8 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 2110 MHz to 2170 MHz. Available in LGA outline.

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BLM9D2527-09AM

The BLM9D2527-09AM is a 2-stage 9 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 2496 MHz to 2700 MHz. Available in LGA outline.

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CLS3H2731L-700

The CLS3H2731L-700 and CLS3H2731LS-700 are 700 W internally pre-matched RF GaN HEMTs power transistors that are usable from 2.7 GHz to 3.1 GHz.

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BLM10D2327-40AB

The BLM10D2327-40AB is a 2-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as a final stage for small cells and massive MIMO applications in the frequency range from 2500 MHz to 2700 MHz. Available in PQFN outline.

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BLM10D3438-35AB

The BLM10D3438-35AB is a 3-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as a final stage for small cells and massive MIMO applications in the frequency range from 3400 MHz to 3800 MHz. Available in PQFN outline.

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BLM7G1822S-40ABG

The BLM7G1822S-40AB(G) is a dual section, asymmetric, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as small cell final in Doherty configuration, or as general purpose driver in the 1805 MHz to 2170 MHz frequency range. Available in gull wing or straight lead outline.

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BLM9H0610S-60PG

The BLM9H0610S-60PG is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN9 HV LDMMIC technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 600 MHz to 1000 MHz. Available in gull wing outline.

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BLM10D3438-70ABG

The BLM10D3438-70ABG is a 3-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or mMIMO final in the frequency range from 3400 MHz to 3800 MHz. Available in gull wing.

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BLM7G1822S-40AB

The BLM7G1822S-40AB(G) is a dual section, asymmetric, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as small cell final in Doherty configuration, or as general purpose driver in the 1805 MHz to 2170 MHz frequency range. Available in gull wing or straight lead outline.

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BLM7G1822S-80PB

The BLM7G1822S-80PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or straight lead outline.

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BLM7G1822S-80ABG

The BLM7G1822S-80AB(G) is a dual section, asymmetric, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as small cell final stage in Doherty configuration, or as general purpose driver in the 1805 MHz to 2170 MHz frequency range. Available in gull wing or straight lead outline.

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BLM7G1822S-80AB

The BLM7G1822S-80AB(G) is a dual section, asymmetric, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as small cell final stage in Doherty configuration, or as general purpose driver in the 1805 MHz to 2170 MHz frequency range. Available in gull wing or straight lead outline.

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BLM8G0710S-60PB

The BLM8G0710S-60PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz. Available in gull wing or straight lead outline.

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BLM8G0710S-45AB

The BLM8G0710S-45AB(G) is a dual section, asymmetric, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as small cell final stage in Doherty configuration, or as general purpose driver in the 700 MHz to 1000 MHz frequency range. Available in gull wing or straight lead outline.

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BLM8G0710S-45ABG

The BLM8G0710S-45AB(G) is a dual section, asymmetric, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as small cell final stage in Doherty configuration, or as general purpose driver in the 700 MHz to 1000 MHz frequency range. Available in gull wing or straight lead outline.

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BLM8G0710S-30PB

The BLM8G0710S-30PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz. Available in gull wing or straight lead outline.

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BLM10D1822-60ABG

The BLM10D1822-60ABG is a 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or mMIMO final in the frequency range from 1800 MHz to 2200 MHz. Available in gull wing.

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BLM7G1822S-40PB

The BLM7G1822S-40PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or straight lead outline.

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BLM8D1822S-50PB

The BLM8D1822S-50PB(G) is a dual section, 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN8 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or flat lead outline.

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BLM8G0710S-15PB

The BLM8G0710S-15PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz. Available in gull wing or straight lead outline.

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BLM7G1822S-20PB

The BLM7G1822S-20PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or straight lead outline.

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BLM10D1822-61ABG

The BLM10D1822-61ABG is a 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver in the frequency range from 1800 MHz to 2200 MHz. Available in gull wing.

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BLM9D2327S-50PB

The BLM9D2327S-50PB(G) is a dual section, 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN9 LDMOS technology. For each section, the carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 2300 MHz to 2700 MHz. Available in gull wing or flat lead outline.

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BLM10D3740-35AB

The BLM10D3740-35AB is a 3-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as a final stage for small cells and massive MIMO applications in the frequency range from 3700 MHz to 4000 MHz. Available in PQFN outline.

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BLM10D2327-60ABG

The BLM10D2327-60ABG is a 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS MMIC technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This device is perfectly suited as general purpose driver or mMIMO final in the frequency range from 2300 MHz to 2700 MHz. Available in gull wing.

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CLS3H2731LS-700

The CLS3H2731L-700 and CLS3H2731LS-700 are 700 W internally pre-matched RF GaN HEMTs power transistors that are usable from 2.7 GHz to 3.1 GHz.

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BLM7G1822S-80PBG

The BLM7G1822S-80PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or straight lead outline.

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BLM7G1822S-20PBG

The BLM7G1822S-20PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or straight lead outline.

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BLM7G1822S-40PBG

The BLM7G1822S-40PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or straight lead outline.

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BLM8D1822S-50PBG

The BLM8D1822S-50PB(G) is a dual section, 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN8 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or flat lead outline.

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BLM9D2327S-50PBG

The BLM9D2327S-50PB(G) is a dual section, 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN9 LDMOS technology. For each section, the carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 2300 MHz to 2700 MHz. Available in gull wing or flat lead outline.

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BLM9D1822S-60PBG

The BLM9D1822S-60PBG is a dual section, 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. For each section, the carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1800 MHz to 2200 MHz. Available in gull wing outline.

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BLM8G0710S-60PBG

The BLM8G0710S-60PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz. Available in gull wing or straight lead outline.

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BLM8G0710S-30PBG

The BLM8G0710S-30PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz. Available in gull wing or straight lead outline.

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BLM8G0710S-15PBG

The BLM8G0710S-15PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz. Available in gull wing or straight lead outline.

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