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111 products found for "ART"
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ART35FE
Based on Advanced Rugged Technology (ART), this 35 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz.
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ART150PE
Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz
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ART150FE
Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor hasbeen designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz.
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ART1K6PH
Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.
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ART1K6FH
Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 425 MHz.
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ART1K9FH
Based on Advanced Rugged Technology (ART), this 1900 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 500 MHz.
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ART2K0PE
Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.
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ART2K0FE
Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.
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ART700FH
Based on Advanced Rugged Technology (ART), this 700 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and non cellular communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.
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ART450FE
Based on Advanced Rugged Technology (ART), this 450 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz.
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ART800PE
Based on Advanced Rugged Technology (ART), this 800 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz.
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ART150PEG
Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz
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ART1K6FHG
Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 425 MHz.
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ART1K6FHS
Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 425 MHz.
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ART1K6PHG
Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.
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ART2K0FES
Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.
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ART2K0FEG
Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.
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ART2K0PEG
Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.
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ART700FHG
Based on Advanced Rugged Technology (ART), this 700 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and non cellular communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.
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ART700FHS
Based on Advanced Rugged Technology (ART), this 700 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and non cellular communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.
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ART800PEG
Based on Advanced Rugged Technology (ART), this 800 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz.
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ART2K0TFE
Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.
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ART2K5TPU
Based on Advanced Rugged Technology (ART), this 2500 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.
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ART2K0TFES
Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.
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ART2K0TFEG
Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.
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ART2K5TFUS
Based on Advanced Rugged Technology (ART), this 2500 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.
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ART2K5TFUG
Based on Advanced Rugged Technology (ART), this 2500 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.
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BLM6G22-30
30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead (SOT834-1).
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- Withdrawn
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BLM6G10-30
30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz. Available in Gull Wing for surface mount (SOT822-1) or flat lead (SOT834-1)
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- Withdrawn
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BLD6G21L-50
The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution using Ampleon’s state of the art GEN6 LDMOS technology. This device is perfectly suited for TD-SCDMA base station applications at frequencies from 2010 MHz to 2025 MHz. The main and peak device, input splitter and output combiner are integrated in a single package. This package consists of one gate and drain lead and two extra leads of which one is used for biasing the peak amplifier and the other is not connected. It only requires the proper input/output match and bias setting as with a normal class-AB transistor.
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BLD6G22L-50
The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using Ampleon’s state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequencies from 2110 MHz to 2170 MHz. The main and peak device, input splitter and output combiner are integrated in a single package. This package consists of one gate and drain lead and two extra leads of which one is used for biasing the peak amplifier and the other is not connected. It only requires the proper input/output match and bias setting as with a normal class-AB transistor.
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BLM6G22-30G
30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead (SOT834-1).
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- Withdrawn
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BLM6G10-30G
30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz. Available in Gull Wing for surface mount (SOT822-1) or flat lead (SOT834-1)
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- Withdrawn
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BLD6G21LS-50
The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution using Ampleon’s state of the art GEN6 LDMOS technology. This device is perfectly suited for TD-SCDMA base station applications at frequencies from 2010 MHz to 2025 MHz. The main and peak device, input splitter and output combiner are integrated in a single package. This package consists of one gate and drain lead and two extra leads of which one is used for biasing the peak amplifier and the other is not connected. It only requires the proper input/output match and bias setting as with a normal class-AB transistor.
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- Withdrawn
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BLD6G22LS-50
The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using Ampleon’s state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequencies from 2110 MHz to 2170 MHz. The main and peak device, input splitter and output combiner are integrated in a single package. This package consists of one gate and drain lead and two extra leads of which one is used for biasing the peak amplifier and the other is not connected. It only requires the proper input/output match and bias setting as with a normal class-AB transistor.
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B10G3741N55D
This product is not recommended for design-in.
The recommended types are: C4H2350N05 and C5H3440N70D (coming soon)The B10G3741N55D is a 3-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as a final stage for small cells and massive MIMO applications in the frequency range from 3700 MHz to 4100 MHz. Available in PQFN outline.
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B10G3438N55D
This product is not recommended for design-in.
The recommended type is: G1M3438P70C (coming soon)The B10G3438N55D is a 3-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as a final stage for small cells and massive MIMO applications in the frequency range from 3400 MHz to 3800 MHz. Available in PQFN outline.
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B11G2327N72D
The B11G2327N72D is a dual section 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range 2300 MHz to 2700 MHz. Available in PQFN outline.
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B10G2327N55D
The B10G2327N55D is a 2-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This device is perfectly suited as general purpose driver or mMIMO final in the frequency range from 2300 MHz to 2700 MHz. Available in PQFN outline.
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B11G1822N60D
The B11G1822N60D is a dual section 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range 1800 MHz to 2200 MHz. Available in PQFN outline.
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B11G2327N71D
The B11G2327N71D is a dual path 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as general purpose driver in the frequency range 2300 MHz to 2700 MHz. Available in PQFN outline.
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B11G3338N81D
The B11G3338N81D is a dual section 3-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range 3300 MHz to 3800 MHz. Available in PQFN outline.
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B11G2327N70D
The B11G2327N70D is a dual path 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as general purpose driver in the frequency range 2300 MHz to 2700 MHz. Available in PQFN outline.
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- Discontinued
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B11G3338N80D
The B11G3338N80D is a dual section 3-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range 3300 MHz to 3800 MHz. Available in PQFN outline.
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- Discontinued
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B11G3742N81D
The B11G3742N81D is a dual section 3-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range 3700 MHz to 4200 MHz. Available in PQFN outline.
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B10H0608N40D
The B10H0608N40D is a dual section 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art 50 V LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range 600 MHz to 800 MHz. Available in a 12 mm x 8 mm LGA outline.
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B10H0710N40D
The B10H0710N40D is a dual section 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art 50 V LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range 700 MHz to 1 GHz. Available in LGA outline.
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BLF13H9L750P
750 W LDMOS power transistor in SOT539 push pull package for accelerator applications at a frequency of 1.3 GHz.
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B10G4750N12DL
The B10G4750N12DL is a 3-stage 12 W fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner, and output matching are integrated in a single package. This multiband device is perfectly suited as a general purpose device in the frequency range from 4700 MHz to 5000 MHz. Available in LGA outline.
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BLM9D1822-30B
The BLM9D1822-30B is a 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1800 MHz to 2200 MHz. Available in PQFN outline.
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BLM9D2327-26B
The BLM9D2327-26B is a thermally enhanced 2-stage fully integrated MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 2300 MHz to 2700 MHz. Available in PQFN outline.
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BLM9D2327-25B
The BLM9D2327-25B is a 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 2300 MHz to 2700 MHz. Available in PQFN outline.
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- Withdrawn
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BLM7G24S-30BG
The BLM7G24S-30BG is a 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This device is perfectly suited as general purpose driver in the frequency range from 2100 MHz to 2400 MHz. Available in gull wing.
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- Withdrawn
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B10G2324N10DL
The B10G2324N10DL is a 2-stage 10 W fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner, and output matching are integrated in a single package. This multiband device is perfectly suited as a general-purpose device in the frequency range from 2300 MHz to 2400 MHz. Available in a 7 mm x 7 mm LGA outline.
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B10G1819N10DL
The B10G1819N10DL is a 2-stage 10 W fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner, and output matching are integrated in a single package. This multiband device is perfectly suited as a general-purpose device in the frequency range from 1805 MHz to 1880 MHz. Available in a 7 mm x 7 mm LGA outline.
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B10G2022N10DL
The B10G2022N10DL is a 2-stage 10 W fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner, and output matching are integrated in a single package. This multiband device is perfectly suited as a general-purpose device in the frequency range from 2110 MHz to 2170 MHz. Available in a 7 mm x 7 mm LGA outline.
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BLM7G22S-60PB
This device has been transferred from Ampleon to Flip Electronics.
The BLM7G22S-60PB(G) is a dual path 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This device is perfectly suited as general purpose driver in the frequency range from 2100 MHz to 2200 MHz. Available in gull wing or flat lead outline.
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- Transferred
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B10G3336N16DL
The B10G3336N16DL is a 3-stage 16 W fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner, and output matching are integrated in a single package. This multiband device is perfectly suited as a general-purpose device in the frequency range from 3300 MHz to 3600 MHz. Available in LGA outline.
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B10G2527N10DL
The B10G2527N10DL is a 2-stage 10 W fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner, and output matching are integrated in a single package. This multiband device is perfectly suited as a general-purpose device in the frequency range from 2500 MHz to 2700 MHz. Available in a 7 mm x 7 mm LGA outline.
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BLF13H9LS750P
750 W LDMOS power transistor in SOT539 push pull package for accelerator applications at a frequency of 1.3 GHz.
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BLM9D2527-20AB
The BLM9D2527-20AB is a 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a final device in massive MIMO or small cell applications in the frequency range from 2500 MHz to 2700 MHz. Available in PQFN outline.
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- Withdrawn
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BLM9D3438-16AM
The BLM9D3438-16AM is a 3-stage 16 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 3400 MHz to 3800 MHz. Available in LGA outline.
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BLM9D0708-05AM
The BLM9D0708-05AM is a 1-stage 5 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 728 MHz to 821 MHz. Available in LGA outline.
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BLM9D3336-14AM
The BLM9D3336-14AM is a 3-stage 14 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 3300 MHz to 3650 MHz. Available in LGA outline.
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BLM9D3740-16AM
The BLM9D3740-16AM is a 3-stage 16 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 3700 MHz to 4000 MHz. Available in LGA outline.
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BLM9D2325-20AB
The BLM9D2325-20AB is a 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a final device in massive MIMO or small cell applications in the frequency range from 2300 MHz to 2500 MHz. Available in PQFN outline.
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- Withdrawn
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BLM7G22S-60PBG
This device has been transferred from Ampleon to Flip Electronics.
The BLM7G22S-60PB(G) is a dual path 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This device is perfectly suited as general purpose driver in the frequency range from 2100 MHz to 2200 MHz. Available in gull wing or flat lead outline.
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- Transferred
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BLM9D1920-08AM
The BLM9D1920-08AM is a 2-stage 8 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 1880 MHz to 2025 MHz. Available in LGA outline.
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BLM9D1819-08AM
The BLM9D1819-08AM is a 2-stage 8 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 1805 MHz to 1880 MHz. Available in LGA outline.
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BLM9D2324-08AM
The BLM9D2324-08AM is a 2-stage 8 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 2300 MHz to 2400 MHz. Available in LGA outline.
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BLM9D3336-12AM
The BLM9D3336-12AM is a 3-stage 12 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 3300 MHz to 3650 MHz. Available in LGA outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
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BLM9D0910-05AM
The BLM9D0910-05AM is a 1-stage 5 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 859 MHz to 960 MHz. Available in LGA outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
-
BLM9D3538-12AM
The BLM9D3538-12AM is a 3-stage 12 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 3400 MHz to 3800 MHz. Available in LGA outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
-
BLM9D2022-08AM
The BLM9D2022-08AM is a 2-stage 8 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 2110 MHz to 2170 MHz. Available in LGA outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
-
BLM9D2527-09AM
The BLM9D2527-09AM is a 2-stage 9 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 2496 MHz to 2700 MHz. Available in LGA outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
-
BLM9D3842-16AM
The BLM9D3842-16AM is a 3-stage 16 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 3800 MHz to 4200 MHz. Available in LGA outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
-
BLM9D3437-12AM
The BLM9D3437-12AM is a 3-stage 12 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 3400 MHz to 3700 MHz. Available in LGA outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Discontinued
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BLM8AD22S-60ABG
The BLM8AD22S-60ABG is a dual section solution using Ampleon’s state of the art GEN8 LDMOS technology. It includes a 45 W 2-stage fully integrated Doherty MMIC in section A, and a 15 W, 2-stage MMIC in section B, allowing a 3-way 1:2:1 Doherty when both sections are externally combined. The carrier and peaking devices, input splitter and output combiner, of the 2-stage fully integrated Doherty MMIC of section A are integrated in package. This device is perfectly suited as final stage in massive MIMO or small cell applications in the frequency range from 2100 MHz to 2200 MHz. Available in gull wing.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Discontinued
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CLS3H2731L-700
The CLS3H2731L-700 and CLS3H2731LS-700 are 700 W long pulse GaN-SiC HEMTs power transistors covering the frequency band from 2.7 GHz to 3.1 GHz.
Learn more- Documentation
- Design support
- Quality
- Production
-
BLM9D2327S-50PB
This product is not recommended for design-in.
The recommended type is: B11G2327N71DThe BLM9D2327S-50PB(G) is a dual section, 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN9 LDMOS technology. For each section, the carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 2300 MHz to 2700 MHz. Available in gull wing or flat lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Not for design in
-
BLM10D3740-35AB
This product is not recommended for design-in.
The BLM10D3740-35AB is a 3-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as a final stage for small cells and massive MIMO applications in the frequency range from 3700 MHz to 4000 MHz. Available in PQFN outline.
Learn more- Datasheet
- Documentation
- Design support
- Not for design in
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BLM10D2327-60ABG
This product is not recommended for design-in.
The recommended type is: B11G2327N71DThe BLM10D2327-60ABG is a 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS MMIC technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This device is perfectly suited as general purpose driver or mMIMO final in the frequency range from 2300 MHz to 2700 MHz. Available in gull wing.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Not for design in
-
BLM7G1822S-40PB
This product is not recommended for design-in.
The recommended type is: B11G1822N60DThe BLM7G1822S-40PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Not for design in
-
BLM8D1822S-50PB
This product is not recommended for design-in.
The recommended type is: B11G1822N60DThe BLM8D1822S-50PB(G) is a dual section, 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN8 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or flat lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Not for design in
-
BLM8G0710S-15PB
This product is not recommended for design-in.
The recommended type is: B10H0710N40DThe BLM8G0710S-15PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Not for design in
-
BLM7G1822S-20PB
This product is not recommended for design-in.
The recommended type is: BLM9D1822-30BThe BLM7G1822S-20PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Not for design in
-
BLM10D1822-61ABG
This product is not recommended for design-in.
The recommended type is: B11G1822N60DThe BLM10D1822-61ABG is a 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver in the frequency range from 1800 MHz to 2200 MHz. Available in gull wing.
Learn more- Datasheet
- Documentation
- Design support
- Not for design in
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BLM10D1822-60ABG
This product is not recommended for design-in.
The recommended type is: B11G1822N60DThe BLM10D1822-60ABG is a 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or mMIMO final in the frequency range from 1800 MHz to 2200 MHz. Available in gull wing.
Learn more- Datasheet
- Documentation
- Design support
- Not for design in
-
BLM8G0710S-60PB
The BLM8G0710S-60PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Discontinued
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BLM8G0710S-45AB
The BLM8G0710S-45AB(G) is a dual section, asymmetric, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as small cell final stage in Doherty configuration, or as general purpose driver in the 700 MHz to 1000 MHz frequency range. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Discontinued
-
BLM8G0710S-45ABG
The BLM8G0710S-45AB(G) is a dual section, asymmetric, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as small cell final stage in Doherty configuration, or as general purpose driver in the 700 MHz to 1000 MHz frequency range. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Discontinued
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BLM8G0710S-30PB
This product has been discontinued. Click here for discontinuation information.
The replacement is: B10H0710N40DThe BLM8G0710S-30PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Discontinued
-
BLM10D2327-40AB
The BLM10D2327-40AB is a 2-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as a final stage for small cells and massive MIMO applications in the frequency range from 2500 MHz to 2700 MHz. Available in PQFN outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
-
BLM10D3438-35AB
The BLM10D3438-35AB is a 3-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as a final stage for small cells and massive MIMO applications in the frequency range from 3400 MHz to 3800 MHz. Available in PQFN outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
-
BLM7G1822S-40ABG
The BLM7G1822S-40AB(G) is a dual section, asymmetric, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as small cell final in Doherty configuration, or as general purpose driver in the 1805 MHz to 2170 MHz frequency range. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Discontinued
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BLM9H0610S-60PG
The BLM9H0610S-60PG is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN9 HV LDMMIC technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 600 MHz to 1000 MHz. Available in gull wing outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
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BLM10D3438-70ABG
The BLM10D3438-70ABG is a 3-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or mMIMO final in the frequency range from 3400 MHz to 3800 MHz. Available in gull wing.
Learn more- Datasheet
- Documentation
- Design support
- Discontinued
-
BLM7G1822S-40AB
The BLM7G1822S-40AB(G) is a dual section, asymmetric, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as small cell final in Doherty configuration, or as general purpose driver in the 1805 MHz to 2170 MHz frequency range. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Discontinued
-
BLM7G1822S-80PB
The BLM7G1822S-80PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Discontinued
-
BLM7G1822S-80ABG
The BLM7G1822S-80AB(G) is a dual section, asymmetric, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as small cell final stage in Doherty configuration, or as general purpose driver in the 1805 MHz to 2170 MHz frequency range. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Withdrawn
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BLM7G1822S-80AB
The BLM7G1822S-80AB(G) is a dual section, asymmetric, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as small cell final stage in Doherty configuration, or as general purpose driver in the 1805 MHz to 2170 MHz frequency range. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Withdrawn
-
CLS3H2731LS-700
The CLS3H2731L-700 and CLS3H2731LS-700 are 700 W long pulse GaN-SiC HEMTs power transistors covering the frequency band from 2.7 GHz to 3.1 GHz.
Learn more- Documentation
- Design support
- Quality
- Production
-
BLM7G1822S-80PBG
The BLM7G1822S-80PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
-
BLM8G0710S-30PBG
This product is not recommended for design-in.
The recommended type is: B10H0710N40DThe BLM8G0710S-30PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Not for design in
-
BLM8G0710S-15PBG
This product is not recommended for design-in.
The recommended type is: B10H0710N40DThe BLM8G0710S-15PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Not for design in
-
BLM9D1822S-60PBG
The BLM9D1822S-60PBG is a dual section, 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. For each section, the carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1800 MHz to 2200 MHz. Available in gull wing outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
-
BLM8G0710S-60PBG
The BLM8G0710S-60PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Discontinued
-
BLM7G1822S-20PBG
The BLM7G1822S-20PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Discontinued
-
BLM7G1822S-40PBG
The BLM7G1822S-40PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
-
BLM8D1822S-50PBG
The BLM8D1822S-50PB(G) is a dual section, 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN8 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or flat lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
-
BLM9D2327S-50PBG
The BLM9D2327S-50PB(G) is a dual section, 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN9 LDMOS technology. For each section, the carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 2300 MHz to 2700 MHz. Available in gull wing or flat lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
777 documents found for "ART"
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ART2K5TFUS(G) Foster Thermal Transient Impedance Model (Simulation model)
ART2K5TFUS(G) Foster Thermal Transient Impedance Model
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ART2K5TFUS(G) Cauer Thermal Transient Impedance Model (Simulation model)
ART2K5TFUS(G) Cauer Thermal Transient Impedance Model
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ART1K9FH Foster Thermal Transient Impedance Model (Simulation model)
ART1K9FH Foster Thermal Transient Impedance Model
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ART1K9FH Cauer Thermal Transient Impedance Model (Simulation model)
ART1K9FH Cauer Thermal Transient Impedance Model
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ART2K5TPU Foster Thermal Transient Impedance Model (Simulation model)
ART2K5TPU Foster Thermal Transient Impedance Model
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ART2K5TPU Cauer Thermal Transient Impedance Model (Simulation model)
ART2K5TPU Cauer Thermal Transient Impedance Model
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ART1K6PH(G) Cauer Thermal Transient Impedance Model (Simulation model)
ART1K6PH(G) Cauer Thermal Transient Impedance Model
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ART1K6PH(G) Foster Thermal Transient Impedance Model (Simulation model)
ART1K6PH(G) Foster Thermal Transient Impedance Model
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ART800PE(G) Foster Thermal Transient Impedance Model (Simulation model)
ART800PE(G) Foster Thermal Transient Impedance Model
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ART800PE(G) Cauer Thermal Transient Impedance Model (Simulation model)
ART800PE(G) Cauer Thermal Transient Impedance Model
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ART2K0PE(G) Foster Thermal Transient Impedance Model (Simulation model)
ART2K0PE(G) Foster Thermal Transient Impedance Model
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ART2K0PE(G) Cauer Thermal Transient Impedance Model (Simulation model)
ART2K0PE(G) Cauer Thermal Transient Impedance Model
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ART450FE Foster Thermal Transient Impedance Model (Simulation model)
ART450FE Foster Thermal Transient Impedance Model
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ART450FE Cauer Thermal Transient Impedance Model (Simulation model)
ART450FE Cauer Thermal Transient Impedance Model
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ART2K0TFES(G) Foster Thermal Transient Impedance Model (Simulation model)
ART2K0TFES(G) Foster Thermal Transient Impedance Model
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ART2K0TFES(G) Cauer Thermal Transient Impedance Model (Simulation model)
ART2K0TFES(G) Cauer Thermal Transient Impedance Model
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ART2K0FE(S)(G) Cauer Thermal Transient Impedance Model (Simulation model)
ART2K0FE(S)(G) Cauer Thermal Transient Impedance Model
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ART2K0FE(S)(G) Foster Thermal Transient Impedance Model (Simulation model)
ART2K0FE(S)(G) Foster Thermal Transient Impedance Model
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ART2K5TFUS 75 V 100 mA S-parameter data (Simulation model)
ART2K5TFUS 75 V 100 mA S-parameter data
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ART1K9FH 55 V 125 mA S-parameter data (S-parameter)
ART1K9FH 55 V 125 mA S-parameter data
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ART2K5TPU 75 V 100 mA S-parameter data (S-parameter)
ART2K5TPU 75 V 100 mA S-parameter data
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ART800PE 65 V 50 mA S-parameter data (S-parameter)
ART800PE 65 V 50 mA S-parameter data
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ART2K0TFES 65 V 100 mA S-parameter data (S-parameter)
ART2K0TFES 65 V 100 mA S-parameter data
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ART450FE 65 V 25 mA S-parameter data (S-parameter)
ART450FE 65 V 25 mA S-parameter data
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ART150PE 65 V 20 mA S-parameter data (S-parameter)
ART150PE 65 V 20 mA S-parameter data
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ART700FH(S) 65 V 50 mA S-parameter data (S-parameter)
ART700FH(S) 65 V 50 mA S-parameter data
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ART150FE 65 V 300 mA S-parameter data (S-parameter)
ART150FE 65 V 300 mA S-parameter data
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ART1K6PH 50 V 100 mA S-parameter data (S-parameter)
ART1K6PH 50 V 100 mA S-parameter data
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ART1K6FH(S) 50 V 100 mA S-parameter data (S-parameter)
ART1K6FH(S) 50 V 100 mA S-parameter data
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ART2K0FE(S) 65 V 100 mA S-parameter data (S-parameter)
ART2K0FE(S) 65 V 100 mA S-parameter data
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ART2K0PE 65 V 100 mA S-parameter data (S-parameter)
ART2K0PE 65 V 100 mA S-parameter data
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Signal generator for RF energy solutions (Data sheet)
Signal generator for RF energy solutions
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LDMOS L-band radar power transistor (Data sheet)
LDMOS L-band radar power transistor
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS S-band radar power transistor (Data sheet)
LDMOS S-band radar power transistor
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS S-band radar power transistor (Data sheet)
LDMOS S-band radar power transistor
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LDMOS S-band radar power transistor (Data sheet)
LDMOS S-band radar power transistor
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LDMOS S-band radar power transistor (Data sheet)
LDMOS S-band radar power transistor
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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L-band internally pre-matched GaN-SiC HEMT (Data sheet)
L-band internally pre-matched GaN-SiC HEMT
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS 1-stage integrated Doherty MMIC (Data sheet)
LDMOS 1-stage integrated Doherty MMIC
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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LDMOS 1-stage integrated Doherty MMIC (Data sheet)
LDMOS 1-stage integrated Doherty MMIC
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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Ampleon Plug-and-play evaluation tools for RF energy (Leaflet)
Ampleon Plug-and-play evaluation tools for RF energy
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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Printed-Circuit Board (PCB) ART2K0FE(S)(G) (Data sheet) (Design support)
Printed-Circuit Board (PCB) ART2K0FE(S)(G) (Data sheet)
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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Plastic, heatsink small outline package; 4 leads (flat) (Outline drawing)
Plastic, heatsink small outline package; 4 leads (flat)
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Plastic, heatsink small outline package; 4 leads (flat) (Outline drawing)
Plastic, heatsink small outline package; 4 leads (flat)
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Plastic, heatsink small outline package; 4 leads (flat) (Outline drawing)
Plastic, heatsink small outline package; 4 leads (flat)
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Plastic, heatsink small outline package; 4 leads (Outline drawing)
Plastic, heatsink small outline package; 4 leads
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Plastic, heatsink small outline package; 4 leads (flat) (Outline drawing)
Plastic, heatsink small outline package; 4 leads (flat)
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Overmolded plastic earless flanged package; 4 leads (Outline drawing)
Overmolded plastic earless flanged package; 4 leads
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Overmolded plastic earless flanged package; 4 leads (Outline drawing)
Overmolded plastic earless flanged package; 4 leads
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Plastic, heatsink small outline package; 16 leads (flat) (Outline drawing)
Plastic, heatsink small outline package; 16 leads (flat)
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Plastic, heatsink small outline package; 16 leads (Outline drawing)
Plastic, heatsink small outline package; 16 leads
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Plastic, heatsink small outline package; 8 leads (Outline drawing)
Plastic, heatsink small outline package; 8 leads
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Footprint for reflow soldering SOT822-1 (Reflow soldering)
Footprint for reflow soldering SOT822-1
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Footprint for reflow soldering SOT834-1 (Reflow soldering)
Footprint for reflow soldering SOT834-1
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Footprint for reflow soldering SOT1352-1 (Reflow soldering)
Footprint for reflow soldering SOT1352-1
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Footprint for reflow soldering SOT1179-2 (Reflow soldering)
Footprint for reflow soldering SOT1179-2
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Footprint information for reflow soldering of SOT1371-1 package (Reflow soldering)
Footprint information for reflow soldering of SOT1371-1 package
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Ampleon’s advancements with ruggedized Si LDMOS transistors of up to 2 kW of RF power for 1 through 400 MHz (White paper)
Ampleon’s advancements with ruggedized Si LDMOS transistors of up to 2 kW of RF power for 1 through 400 MHz
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RF power transistors for broadband applications (White paper)
RF power transistors for broadband applications
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Uppsala University's BLF188XR single ended amplifier at 352 MHz (Application note)
Uppsala University's BLF188XR single ended amplifier at 352 MHz
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Thermal characteristics of ART LDMOS power transistors (Application note)
Thermal characteristics of ART LDMOS power transistors
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Thermal characteristics of GaN power transistors (Application note)
Thermal characteristics of GaN power transistors
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Assembly and usage guidelines of RF pallets (Application note)
Assembly and usage guidelines of RF pallets
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General PCB design and transistor mounting guidelines to achieve optimum performance with the BLF0910H9LS600 (Application note)
General PCB design and transistor mounting guidelines to achieve optimum performance with the BLF0910H9LS600
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Extremely rugged 50 V LDMOS devices capture ISM and Broadcast markets (White paper)
Extremely rugged 50 V LDMOS devices capture ISM and Broadcast markets
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Ampleon’s Ultra Wideband Doherty (UWD) for TV transmitters (White paper)
Ampleon’s Ultra Wideband Doherty (UWD) for TV transmitters
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS S-band radar power transistor (Data sheet)
LDMOS S-band radar power transistor
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LDMOS S-band radar power transistor (Data sheet)
LDMOS S-band radar power transistor
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LDMOS L-band radar power transistor (Data sheet)
LDMOS L-band radar power transistor
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Biasing asymmetrical Doherty RF power transistor (Other type)
Biasing asymmetrical Doherty RF power transistor
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EuMW2020 Student Design Competition Thrust 2 (MarCom)
EuMW2020 Student Design Competition Thrust 2
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EuMW2019 Student Design Competition Thrust 2 (MarCom)
EuMW2019 Student Design Competition Thrust 2
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Air cavity plastic earless flanged package; 6 leads (Outline drawing)
Air cavity plastic earless flanged package; 6 leads
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Plastic earless flanged cavity package; 4 leads (Outline drawing)
Plastic earless flanged cavity package; 4 leads
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Earless flanged ceramic package; 4 leads (Outline drawing)
Earless flanged ceramic package; 4 leads
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Plastic; heatsink small outline package; 2 leads (Outline drawing)
Plastic; heatsink small outline package; 2 leads
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Earless flanged ceramic package; 6 leads (Outline drawing)
Earless flanged ceramic package; 6 leads
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Earless flanged ceramic package; 6 leads (Outline drawing)
Earless flanged ceramic package; 6 leads
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Earless flanged ceramic package; 6 leads (Outline drawing)
Earless flanged ceramic package; 6 leads
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Plastic, heatsink small outline package; 4 leads (flat) (Outline drawing)
Plastic, heatsink small outline package; 4 leads (flat)
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Overmolded plastic earless flanged package; 6 leads (Outline drawing)
Overmolded plastic earless flanged package; 6 leads
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Flanged ceramic package; 2 Mounting holes; 6 leads (Outline drawing)
Flanged ceramic package; 2 Mounting holes; 6 leads
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Flanged balanced ceramic package; 2 mounting holes; 4 leads (Outline drawing)
Flanged balanced ceramic package; 2 mounting holes; 4 leads
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Plastic, heatsink small outline package; 8 leads (Outline drawing)
Plastic, heatsink small outline package; 8 leads
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Plastic thermal enhanced package; no leads; 20 terminals; body 7.0 x 7.0 x 0.98 mm (Outline drawing)
Plastic thermal enhanced package; no leads; 20 terminals; body 7.0 x 7.0 x 0.98 mm
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Plastic thermal enhanced package; no leads; 20 terminals; body 7.0 x 7.0 x 0.98 mm (Outline drawing)
Plastic thermal enhanced package; no leads; 20 terminals; body 7.0 x 7.0 x 0.98 mm
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Air cavity plastic earless flanged package; 6 leads (Outline drawing)
Air cavity plastic earless flanged package; 6 leads
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Overmolded plastic earless flanged package; 6 leads (Outline drawing)
Overmolded plastic earless flanged package; 6 leads
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Earless flanged balanced ceramic package; 4 leads (Outline drawing)
Earless flanged balanced ceramic package; 4 leads
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Dual flat no leads plastic package (Outline drawing)
Dual flat no leads plastic package
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Dual flat no leads plastic package (Outline drawing)
Dual flat no leads plastic package
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Plastic; heatsink small outline package; 2 leads (flat) (Outline drawing)
Plastic; heatsink small outline package; 2 leads (flat)
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RF driven plasma lighting: the next revolution in light sources (Other type)
RF driven plasma lighting: the next revolution in light sources
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LDMOS technology for RF power amplifiers (Other type)
LDMOS technology for RF power amplifiers
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Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit (Other type)
Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit
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High voltage RF LDMOS technology for broadcast applications (Other type)
High voltage RF LDMOS technology for broadcast applications
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BLP25RFE001 sample application code (Design support)
BLP25RFE001 sample application code
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Ampleon Netherlands: how to reach us (MarCom)
Ampleon Netherlands: how to reach us
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Measurement results of a Class-AB design for the 360–450 MHz band at 50 V with BLP15H9S100 (Report)
Measurement results of a Class-AB design for the 360–450 MHz band at 50 V with BLP15H9S100
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Measurement results of a design for the 2400–2500 MHz band with BLP2425M10S250P (Report)
Measurement results of a design for the 2400–2500 MHz band with BLP2425M10S250P
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Measurement results of a planar balun design for 60 MHz with ART2K0FE (Report)
Measurement results of a planar balun design for 60 MHz with ART2K0FE
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Measurement results of a CW design for the 88–108 MHz band with BLP0427M9S20 (Report)
Measurement results of a CW design for the 88–108 MHz band with BLP0427M9S20
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Measurement results of a CW design for the 30–512 MHz band with BLP0427M9S20 (Report)
Measurement results of a CW design for the 30–512 MHz band with BLP0427M9S20
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Measurement results of an a-symmetric ultra-wideband Doherty design for the 470 to 700 MHz band with BLF989E (Report)
Measurement results of an a-symmetric ultra-wideband Doherty design for the 470 to 700 MHz band with BLF989E
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Measurement results of a design for the 2.4–2.5 GHz band with BLM2425M9S20 (Report)
Measurement results of a design for the 2.4–2.5 GHz band with BLM2425M9S20
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Measurement results of a design for 225 MHz with BLF974P (Report)
Measurement results of a design for 225 MHz with BLF974P
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Measurement results of a design for the 902–928 MHz band with BLF0910H9LS750P (Report)
Measurement results of a design for the 902–928 MHz band with BLF0910H9LS750P
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Measurement results of a design for 64 MHz with ART150FE (Report)
Measurement results of a design for 64 MHz with ART150FE
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Measurement results of a design for 128 MHz with ART150FE (Report)
Measurement results of a design for 128 MHz with ART150FE
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Measurement results of a demoboard designed for DVB-T digital TV transmitter application for the 470–700 MHz band with BLP15H9S100 (Report)
Measurement results of a demoboard designed for DVB-T digital TV transmitter application for the 470–700 MHz band with BLP15H9S100
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Measurement results of a Class-E generator design for 40 MHz with ART150PEG (Report)
Measurement results of a Class-E generator design for 40 MHz with ART150PEG
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Measurement results of a CW design for 915 MHz with BLP15M9S30 (Report)
Measurement results of a CW design for 915 MHz with BLP15M9S30
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Measurement results of a Class-AB design for the 902–928 MHz band at 50 V with BLF0910H9LS600 (Report)
Measurement results of a Class-AB design for the 902–928 MHz band at 50 V with BLF0910H9LS600
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Measurement results of a Class-AB design for the 644–650 MHz band with BLF978P (Report)
Measurement results of a Class-AB design for the 644–650 MHz band with BLF978P
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Measurement results of design for 500 MHz at 45 V with BLF978P (Report)
Measurement results of design for 500 MHz at 45 V with BLF978P
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Measurement results of a Class-AB design for 500 MHz with BLF978P (Report)
Measurement results of a Class-AB design for 500 MHz with BLF978P
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Measurement results of a Class-AB design for the 325–352 MHz band with BLP15H9S10G (Report)
Measurement results of a Class-AB design for the 325–352 MHz band with BLP15H9S10G
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Measurement results of a design for 352 MHz with BLF978P (Report)
Measurement results of a design for 352 MHz with BLF978P
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Measurement results of a 352 MHz, 1500 W CW power amplifier and PCB integrated coplanar baluns with ART2K0FE (Report)
Measurement results of a 352 MHz, 1500 W CW power amplifier and PCB integrated coplanar baluns with ART2K0FE
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Measurement results of a design for the 230–236 MHz band with BLF974P (Report)
Measurement results of a design for the 230–236 MHz band with BLF974P
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Measurement results of a Class-AB design for the 123–133 MHz band at 50–62 V with ART2K0FE (Report)
Measurement results of a Class-AB design for the 123–133 MHz band at 50–62 V with ART2K0FE
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Measurement results of a Class-AB design for the 80–100 MHz band with ART2K0FE (Report)
Measurement results of a Class-AB design for the 80–100 MHz band with ART2K0FE
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Measurement results of a design for the 79–85 MHz band at 50 V with ART1K6FH (Report)
Measurement results of a design for the 79–85 MHz band at 50 V with ART1K6FH
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Measurement results of a wideband design for the 60–130 MHz band with ART35FE (Report)
Measurement results of a wideband design for the 60–130 MHz band with ART35FE
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Measurement results of design for the 24–30 MHz band at 50 V with ART700FH (Report)
Measurement results of design for the 24–30 MHz band at 50 V with ART700FH
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Measurement results of a Class-AB design for the 380–450 MHz band with BLP5LA55S (Report)
Measurement results of a Class-AB design for the 380–450 MHz band with BLP5LA55S
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Measurement results of a design for the 500-2700 MHz band at 50 V with CLF3H0060-30 (Report)
Measurement results of a design for the 500-2700 MHz band at 50 V with CLF3H0060-30
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Measurement results of a wideband design for the 500–2500 MHz band with CLF3H0035-100 (Report)
Measurement results of a wideband design for the 500–2500 MHz band with CLF3H0035-100
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Measurement results of a Class-AB design for the 768–870 MHz band with BLP15H9S10 (Report)
Measurement results of a Class-AB design for the 768–870 MHz band with BLP15H9S10
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Measurement results of a Class-AB design for the 750–950 MHz band with BLP15H9S30 (Report)
Measurement results of a Class-AB design for the 750–950 MHz band with BLP15H9S30
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Measurement results of a Class-AB design for the 400–470 MHz band at 28 V with BLP15M9S100 (Report)
Measurement results of a Class-AB design for the 400–470 MHz band at 28 V with BLP15M9S100
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Measurement results of a Class-AB design for the 380–450 MHz band at 24–32 V with BLP15H9S10 (Report)
Measurement results of a Class-AB design for the 380–450 MHz band at 24–32 V with BLP15H9S10
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Measurement results of a design for the 360–450 MHz band at 50 V with BLP15H9S30 (Report)
Measurement results of a design for the 360–450 MHz band at 50 V with BLP15H9S30
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Measurement results of a Class-AB design for the 270–310 MHz band at 62 V with ART2K0FE (Report)
Measurement results of a Class-AB design for the 270–310 MHz band at 62 V with ART2K0FE
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Measurement results of a design for the 100–140 MHz band at 62 V with ART150FE (Report)
Measurement results of a design for the 100–140 MHz band at 62 V with ART150FE
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Measurement results of design for the 30–1000 MHz band at 50 V with BLP15H9S30 (Report)
Measurement results of design for the 30–1000 MHz band at 50 V with BLP15H9S30
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Measurement results of a design for the 30–900 MHz band at 50 V with BLP15H9S100 (Report)
Measurement results of a design for the 30–900 MHz band at 50 V with BLP15H9S100
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Measurement results of a Class-AB design for the 30–600 MHz band at 35–50 V with BLP15H9S30 (Report)
Measurement results of a Class-AB design for the 30–600 MHz band at 35–50 V with BLP15H9S30
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Measurement results of Class-AB design for the 30–520 MHz band at 28–32 V with BLP15M9S30 (Report)
Measurement results of Class-AB design for the 30–520 MHz band at 28–32 V with BLP15M9S30
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Measurement results of a Class-AB design for the 30–520 MHz band at 28 V with BLF984P (Report)
Measurement results of a Class-AB design for the 30–520 MHz band at 28 V with BLF984P
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Measurement results of a design for the 30–520 MHz band at 28 V with BLF647P (Report)
Measurement results of a design for the 30–520 MHz band at 28 V with BLF647P
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Measurement results of a Class-AB design for the 30–520 MHz band at 50 V with ART700FH (Report)
Measurement results of a Class-AB design for the 30–520 MHz band at 50 V with ART700FH
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Measurement results of a Class-AB design for the 30–512 MHz band with BLF974P (Report)
Measurement results of a Class-AB design for the 30–512 MHz band with BLF974P
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Measurement results of a design for the 2–30 MHz band at 50 V with BLP15H9S10G (Report)
Measurement results of a design for the 2–30 MHz band at 50 V with BLP15H9S10G
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Measurement results of a linear design for the 2–30 MHz band with ART1K6 (Report)
Measurement results of a linear design for the 2–30 MHz band with ART1K6
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Measurement results of a design for the 2–30 MHz band at 50 V with ART1K6FH (Report)
Measurement results of a design for the 2–30 MHz band at 50 V with ART1K6FH
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Measurement results of a Class-AB design for the 1200–1400 MHz band with CLL3H0914L(S)-700 (Report)
Measurement results of a Class-AB design for the 1200–1400 MHz band with CLL3H0914L(S)-700
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Measurement results of a Class-AB design for the 1200–1400 MHz band at 40–50 V with BLP15H9S30G (Report)
Measurement results of a Class-AB design for the 1200–1400 MHz band at 40–50 V with BLP15H9S30G
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Measurement results of a Class-AB design for the 1030–1090 MHz band with BLP15H9S10 (Report)
Measurement results of a Class-AB design for the 1030–1090 MHz band with BLP15H9S10
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Measurement results of a Class-AB design for the 1025–1150 MHz band with BLP15H9S30 (Report)
Measurement results of a Class-AB design for the 1025–1150 MHz band with BLP15H9S30
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Measurement results of a Class-AB design for the 960–1215 MHz band with CLL3H0914L(S)-700 (Report)
Measurement results of a Class-AB design for the 960–1215 MHz band with CLL3H0914L(S)-700
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Measurement results of a Class-AB design for the 430–435 MHz band at 62 V with ART2K0FE (Report)
Measurement results of a Class-AB design for the 430–435 MHz band at 62 V with ART2K0FE
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Measurement results of a design for the 430–450 MHz band at 50 V with BLP05H9S500P (Report)
Measurement results of a design for the 430–450 MHz band at 50 V with BLP05H9S500P
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Measurement results of a FM design for the 88–108 MHz band with BLF981 (Report)
Measurement results of a FM design for the 88–108 MHz band with BLF981
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Measurement results of an amplifier for the 2.4–2.5 GHz band with CLF24H4LS300P (Report)
Measurement results of an amplifier for the 2.4–2.5 GHz band with CLF24H4LS300P
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Measurement results of a design for 325 MHz with ART1K6PH (Report)
Measurement results of a design for 325 MHz with ART1K6PH
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Measurement results of a design for 352 MHz, 1350 W CW power amplifier with ART1K6PH (Report)
Measurement results of a design for 352 MHz, 1350 W CW power amplifier with ART1K6PH
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Measurement results of a line-up for the 2.4–2.5 GHz band with CLF24H4LS300P and CLP24H4S30P (Report)
Measurement results of a line-up for the 2.4–2.5 GHz band with CLF24H4LS300P and CLP24H4S30P
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Measurement results of an amplifier for the 2.4–2.5 GHz band with CLP24H4S30P (Report)
Measurement results of an amplifier for the 2.4–2.5 GHz band with CLP24H4S30P
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Measurement results of an a-symmetric ultra-wideband Doherty design for the 700 to 860 MHz band with BLF989E (Report)
Measurement results of an a-symmetric ultra-wideband Doherty design for the 700 to 860 MHz band with BLF989E
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Measurement results of a Class-E amplifier design for 41 MHz band with ART2K0 (Report)
Measurement results of a Class-E amplifier design for 41 MHz band with ART2K0
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Measurement results of an amplifier for the 57–63 MHz band with ART800PE (Report)
Measurement results of an amplifier for the 57–63 MHz band with ART800PE
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Measurement results of a design for 13.56 MHz with ART35FE (Report)
Measurement results of a design for 13.56 MHz with ART35FE
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Measurement results of a 352 MHz, 1600 W CW power amplifier and PCB integrated coplanar baluns with ART2K0PE (Report)
Measurement results of a 352 MHz, 1600 W CW power amplifier and PCB integrated coplanar baluns with ART2K0PE
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Measurement results of a Class-AB planar balun design for the 41 MHz band with ART2K0PE (Report)
Measurement results of a Class-AB planar balun design for the 41 MHz band with ART2K0PE
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Measurement results of a concept module for 13.5 MHz, 27 MHz and 41 MHz pulsed and CW applications with ART2K0 (Report)
Measurement results of a concept module for 13.5 MHz, 27 MHz and 41 MHz pulsed and CW applications with ART2K0
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Measurement results of a Class-AB design for the 88–108 MHz band with ART2K0PE (Report)
Measurement results of a Class-AB design for the 88–108 MHz band with ART2K0PE
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Measurement results of a Class-AB design for the 30–520 MHz band at 28 V with BLF944P (Report)
Measurement results of a Class-AB design for the 30–520 MHz band at 28 V with BLF944P
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Measurement results of a design for the 950–1200 MHz band at 28–32 V with BLP15M9S70 (Report)
Measurement results of a design for the 950–1200 MHz band at 28–32 V with BLP15M9S70
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Measurement results of an amplifier for 41 MHz with ART450FE (Report)
Measurement results of an amplifier for 41 MHz with ART450FE
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Measurement results of a Class-AB design for 352 MHz band with BLF978P (Report)
Measurement results of a Class-AB design for 352 MHz band with BLF978P
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Measurement results of a design for the 88–108 MHz band at 50 V with ART700PEG (Report)
Measurement results of a design for the 88–108 MHz band at 50 V with ART700PEG
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Measurement results of a design for 433 MHz, 500 W with BLP05H9S500P (Report)
Measurement results of a design for 433 MHz, 500 W with BLP05H9S500P
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Measurement results of a narrowband design for 915 MHz with BLF0910H9LS750P (Report)
Measurement results of a narrowband design for 915 MHz with BLF0910H9LS750P
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Measurement results of a Class-AB design for the 3100–3500 MHz band with BLS9G3135L(S)-115 (Report)
Measurement results of a Class-AB design for the 3100–3500 MHz band with BLS9G3135L(S)-115
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Measurement results of a Class-AB design for the 1200–1400 MHz band with BLL9G1214LS-600 (Report)
Measurement results of a Class-AB design for the 1200–1400 MHz band with BLL9G1214LS-600
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Measurement results of a Class-AB design for the 1030–1090 MHz band with BLA9G1011L(S)-300(G) (Report)
Measurement results of a Class-AB design for the 1030–1090 MHz band with BLA9G1011L(S)-300(G)
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Measurement results of a Class-AB/B design for the 380–460 MHz band with BLP9LA25S (Report)
Measurement results of a Class-AB/B design for the 380–460 MHz band with BLP9LA25S
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Measurement results of a Class-AB design for the 3000–3100 MHz band with BLS9G2934LS-400 (Report)
Measurement results of a Class-AB design for the 3000–3100 MHz band with BLS9G2934LS-400
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Measurement results of a Class-EF2 generator design for 6.78 MHz with ART150PEG (Report)
Measurement results of a Class-EF2 generator design for 6.78 MHz with ART150PEG
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Measurement results of a Class-AB design for the 3000–3100 MHz band with BLS9G2735L-50 (Report)
Measurement results of a Class-AB design for the 3000–3100 MHz band with BLS9G2735L-50
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Measurement results of a Class-AB design for the 3100–3500 MHz band with BLS9G2735LS-50 (Report)
Measurement results of a Class-AB design for the 3100–3500 MHz band with BLS9G2735LS-50
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Measurement results of a generator design for 40 MHz with ART150PEG (Report)
Measurement results of a generator design for 40 MHz with ART150PEG
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Measurement results of a wideband design for the 10–54 MHz band with ART35FE (Report)
Measurement results of a wideband design for the 10–54 MHz band with ART35FE
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Measurement results of a Class-AB design for the 13–41 MHz band with ART2K0FE (Report)
Measurement results of a Class-AB design for the 13–41 MHz band with ART2K0FE
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Measurement results of a Class-E amplifier design for 2 MHz with ART2K0FE (Report)
Measurement results of a Class-E amplifier design for 2 MHz with ART2K0FE
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Measurement results of a symmetric ultra-wideband Doherty design for the 170–240 MHz band with ART2K0FE (Report)
Measurement results of a symmetric ultra-wideband Doherty design for the 170–240 MHz band with ART2K0FE
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Measurement results of a symmetric ultra-wideband Doherty design for the 165–235 MHz band with ART2K0FE (Report)
Measurement results of a symmetric ultra-wideband Doherty design for the 165–235 MHz band with ART2K0FE
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Measurement results of a Class-AB design for the 88–108 MHz band with ART1K6FH (Report)
Measurement results of a Class-AB design for the 88–108 MHz band with ART1K6FH
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Measurement results of a Class-AB design for the 88–108 MHz band with ART2K0FE (Report)
Measurement results of a Class-AB design for the 88–108 MHz band with ART2K0FE
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Measurement results of a design for the 81–108 MHz band with ART35FE (Report)
Measurement results of a design for the 81–108 MHz band with ART35FE
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Measurement results of a Class-AB broadband design for the 474–714 MHz band with BLF989 (Report)
Measurement results of a Class-AB broadband design for the 474–714 MHz band with BLF989
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Measurement results of a Class-AB design for the 470–700 MHz band at 50 V with BLF989 (Report)
Measurement results of a Class-AB design for the 470–700 MHz band at 50 V with BLF989
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Measurement results of a DVB-T digital TV transmitter design for the 470–494 MHz band with BLF989 (Report)
Measurement results of a DVB-T digital TV transmitter design for the 470–494 MHz band with BLF989
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Measurement results of a Class-AB design for the 1700–1850 MHz band with BLP15H9S100 (Report)
Measurement results of a Class-AB design for the 1700–1850 MHz band with BLP15H9S100
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Measurement results of a Class-AB design for the 740–800 MHz band with BLP9LA25SG (Report)
Measurement results of a Class-AB design for the 740–800 MHz band with BLP9LA25SG
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Mounting and soldering of RF transistors in overmolded plastic packages (Application note)
Mounting and soldering of RF transistors in overmolded plastic packages
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Mounting and soldering of RF transistors in air cavity packages (Application note)
Mounting and soldering of RF transistors in air cavity packages
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Our company, businesses, technologies and products (Leaflet)
Our company, businesses, technologies and products
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Ampleon Sustainability Report 2023 (Other type)
Ampleon Sustainability Report 2023
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Ampleon Sustainability Report 2022 (Other type)
Ampleon Sustainability Report 2022
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Ampleon Statement of Compliance to REACH SVHC (Other type)
Ampleon Statement of Compliance to REACH SVHC
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Ampleon Sustainability Report 2021 (Other type)
Ampleon Sustainability Report 2021
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RF power solutions for Wireless Infrastructure (Brochure)
RF power solutions for Wireless Infrastructure
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Measurement results of a Class-AB design for the 1030– 1090 MHz band (TACAN) with BLA9H0912L(S)-700 (Report)
Measurement results of a Class-AB design for the 1030– 1090 MHz band (TACAN) with BLA9H0912L(S)-700
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Measurement results of a Class-AB design for 1300 MHz with BLF13H9LS750P (Report)
Measurement results of a Class-AB design for 1300 MHz with BLF13H9LS750P
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Measurement results of a Class-AB design for the 1030–1090 MHz band with BLA9H0912L(S)-250 (Report)
Measurement results of a Class-AB design for the 1030–1090 MHz band with BLA9H0912L(S)-250
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Measurement results of a Class-AB broadband design for the 470–860 MHz band with BLP0408H9S30 (Report)
Measurement results of a Class-AB broadband design for the 470–860 MHz band with BLP0408H9S30
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Measurement results of a Class-AB broadband design for the 470–700 MHz band with BLF989 (Report)
Measurement results of a Class-AB broadband design for the 470–700 MHz band with BLF989
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Measurement results of a design for the 2400–2500 MHz band with BLC2425M10LS500P (Report)
Measurement results of a design for the 2400–2500 MHz band with BLC2425M10LS500P
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Measurement results of a design for the 2400–2500 MHz band with BLC2425M10LS250 (Report)
Measurement results of a design for the 2400–2500 MHz band with BLC2425M10LS250
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BLF989(S) Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLF989(S) Model for ADS 2019 (Keysight Advanced Design System)
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BLF989E(S) Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLF989E(S) Model for ADS 2019 (Keysight Advanced Design System)
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BLC2425M10LS250 Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLC2425M10LS250 Model for ADS 2019 (Keysight Advanced Design System)
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BLP15M7160P Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLP15M7160P Model for ADS 2019 (Keysight Advanced Design System)
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BLP05M7200 Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLP05M7200 Model for ADS 2019 (Keysight Advanced Design System)
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BLF9G38LS-90P Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLF9G38LS-90P Model for ADS 2019 (Keysight Advanced Design System)
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BLL8H0514L(S)-130 Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLL8H0514L(S)-130 Model for ADS 2019 (Keysight Advanced Design System)
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BLS9G3135L(S)-115 Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLS9G3135L(S)-115 Model for ADS 2019 (Keysight Advanced Design System)
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BLF881(S) Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLF881(S) Model for ADS 2019 (Keysight Advanced Design System)
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BLF189XRB(S) Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLF189XRB(S) Model for ADS 2019 (Keysight Advanced Design System)
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BLA9G1011L(S)-300 Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLA9G1011L(S)-300 Model for ADS 2019 (Keysight Advanced Design System)
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BLF984P(S) Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLF984P(S) Model for ADS 2019 (Keysight Advanced Design System)
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BLF0910H9LS600 Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLF0910H9LS600 Model for ADS 2019 (Keysight Advanced Design System)
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BLC9G27LS-151AV Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLC9G27LS-151AV Model for ADS 2019 (Keysight Advanced Design System)
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BLC10G18XS-551AVT Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLC10G18XS-551AVT Model for ADS 2019 (Keysight Advanced Design System)
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BLP8G27-5 Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLP8G27-5 Model for ADS 2019 (Keysight Advanced Design System)
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ART2K0TFEG Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
ART2K0TFEG Model for ADS 2019 (Keysight Advanced Design System)
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ART2K0TFES Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
ART2K0TFES Model for ADS 2019 (Keysight Advanced Design System)
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BLL8H1214L(S)-250 Model for ADS 2021 (Keysight Advanced Design System) (Simulation model)
BLL8H1214L(S)-250 Model for ADS 2021 (Keysight Advanced Design System)
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Measurement results of a Class-AB design for the 960–1215 MHz band with BLA9H0912L(S)-1200P (Report)
Measurement results of a Class-AB design for the 960–1215 MHz band with BLA9H0912L(S)-1200P
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Measurement results of a Class-AB planar balun design for the 41 MHz band with ART2K0FE (Report)
Measurement results of a Class-AB planar balun design for the 41 MHz band with ART2K0FE
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Measurement results of a Class-AB design for the 960–1215 MHz band with BLA9H0912L(S)-1200P (Report)
Measurement results of a Class-AB design for the 960–1215 MHz band with BLA9H0912L(S)-1200P
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Measurement results of a Class-AB design for the 960–1215 MHz band (TACAN) with BLA9H0912L(S)-250 (Report)
Measurement results of a Class-AB design for the 960–1215 MHz band (TACAN) with BLA9H0912L(S)-250
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Measurement results of a Class-AB design for the 902–928 MHz band with BLP0427M9S20 (Report)
Measurement results of a Class-AB design for the 902–928 MHz band with BLP0427M9S20
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Measurement results of a Class-AB design for the 800–870 MHz band with BLP9LA25S (Report)
Measurement results of a Class-AB design for the 800–870 MHz band with BLP9LA25S
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Measurement results of a Class-AB design for the 410–460 MHz band with BLU9H0408L-800P (Report)
Measurement results of a Class-AB design for the 410–460 MHz band with BLU9H0408L-800P
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Measurement results of a Class-AB design for the 325–352 MHz band with BLP15H9S100G (Report)
Measurement results of a Class-AB design for the 325–352 MHz band with BLP15H9S100G
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Measurement results of a Class-AB design for the 3100–3500 MHz band with BLS9G3135LS-400 (Report)
Measurement results of a Class-AB design for the 3100–3500 MHz band with BLS9G3135LS-400
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Measurement results of a Class-AB design for the 2900–3500 MHz band with BLS9G2735L-50 (Report)
Measurement results of a Class-AB design for the 2900–3500 MHz band with BLS9G2735L-50
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Measurement results of a Class-AB design for the 2900–3400 MHz band with BLS9G2934LS-400 (Report)
Measurement results of a Class-AB design for the 2900–3400 MHz band with BLS9G2934LS-400
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Measurement results of a Class-AB design for the 2900–3300 MHz band with BLS9G2735L-50 (Report)
Measurement results of a Class-AB design for the 2900–3300 MHz band with BLS9G2735L-50
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Measurement results of a Class-AB design for the 2700–3100 MHz band with BLS9G2731LS-400 (Report)
Measurement results of a Class-AB design for the 2700–3100 MHz band with BLS9G2731LS-400
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Measurement results of a Class-AB design for the 2700–2900 MHz band with BLS9G2729LS-350 (Report)
Measurement results of a Class-AB design for the 2700–2900 MHz band with BLS9G2729LS-350
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Measurement results of a Class-AB design for the 225–400 MHz band with BLP9LA25S (Report)
Measurement results of a Class-AB design for the 225–400 MHz band with BLP9LA25S
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Measurement results of a Class-AB design for the 150–170 MHz band with BLP5LA55S (Report)
Measurement results of a Class-AB design for the 150–170 MHz band with BLP5LA55S
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Measurement results of a Class-AB design for the 1450–1550 MHz band with BLP0427M9S20G (Report)
Measurement results of a Class-AB design for the 1450–1550 MHz band with BLP0427M9S20G
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CLP24H4S30P Model for ADS 2021 (Keysight Advanced Design System) (Simulation model)
CLP24H4S30P Model for ADS 2021 (Keysight Advanced Design System)
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BLM2425M7S60P Model for ADS 2021 (Keysight Advanced Design System) (Simulation model)
BLM2425M7S60P Model for ADS 2021 (Keysight Advanced Design System)
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ART2K5TFUG Model for ADS 2022 (Keysight Advanced Design System) (Simulation model)
ART2K5TFUG Model for ADS 2022 (Keysight Advanced Design System)
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ART2K5TFUS Model for ADS 2022 (Keysight Advanced Design System) (Simulation model)
ART2K5TFUS Model for ADS 2022 (Keysight Advanced Design System)
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ART1K9FH Model for ADS 2022 (Keysight Advanced Design System) (Simulation model)
ART1K9FH Model for ADS 2022 (Keysight Advanced Design System)
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ART800PEG Model for ADS 2022 (Keysight Advanced Design System) (Simulation model)
ART800PEG Model for ADS 2022 (Keysight Advanced Design System)
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ART2K0PEG Model for ADS 2022 (Keysight Advanced Design System) (Simulation model)
ART2K0PEG Model for ADS 2022 (Keysight Advanced Design System)
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BLS9G2735L(S)-50 Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLS9G2735L(S)-50 Model for ADS 2019 (Keysight Advanced Design System)
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BLP0427M9S20 Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLP0427M9S20 Model for ADS 2019 (Keysight Advanced Design System)
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BLP9G0722-20 Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLP9G0722-20 Model for ADS 2019 (Keysight Advanced Design System)
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BLP981 Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLP981 Model for ADS 2019 (Keysight Advanced Design System)
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BLF981S Model for ADS 2022 (Keysight Advanced Design System) (Simulation model)
BLF981S Model for ADS 2022 (Keysight Advanced Design System)
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ART1K9FH Model for Cadence AWR Microwave Office® (Simulation model)
ART1K9FH Model for Cadence AWR Microwave Office®
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ART2K5TPU Simulation Example for Cadence AWR Microwave Office® (Simulation model)
ART2K5TPU Simulation Example for Cadence AWR Microwave Office®
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ART2K5TPU Model for Cadence AWR Microwave Office® (Simulation model)
ART2K5TPU Model for Cadence AWR Microwave Office®
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ART1K6PHG Model for ADS 2022 (Keysight Advanced Design System) (Simulation model)
ART1K6PHG Model for ADS 2022 (Keysight Advanced Design System)
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CLF24H4LS300P Model for ADS 2021 (Keysight Advanced Design System) (Simulation model)
CLF24H4LS300P Model for ADS 2021 (Keysight Advanced Design System)
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ART1K6PH Simulation Example for Cadence AWR Microwave Office® (Simulation model)
ART1K6PH Simulation Example for Cadence AWR Microwave Office®
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ART1K6PH Model for Cadence AWR Microwave Office® (Simulation model)
ART1K6PH Model for Cadence AWR Microwave Office®
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ART800PE Simulation Example for Cadence AWR Microwave Office® (Simulation model)
ART800PE Simulation Example for Cadence AWR Microwave Office®
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ART1K6FH(S) Simulation Example for Cadence AWR Microwave Office® (Simulation model)
ART1K6FH(S) Simulation Example for Cadence AWR Microwave Office®
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ART1K6FH(S) Model for Cadence AWR Microwave Office® (Simulation model)
ART1K6FH(S) Model for Cadence AWR Microwave Office®
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ART2K5TPU Model for ADS 2022 (Keysight Advanced Design System) (Simulation model)
ART2K5TPU Model for ADS 2022 (Keysight Advanced Design System)
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ART800PE Model for Cadence AWR Microwave Office® (Simulation model)
ART800PE Model for Cadence AWR Microwave Office®
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ART450FE Simulation Example for Cadence AWR Microwave Office® (Simulation model)
ART450FE Simulation Example for Cadence AWR Microwave Office®
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ART800PE Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
ART800PE Model for ADS 2019 (Keysight Advanced Design System)
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ART2K0PE Simulation Example for Cadence AWR Microwave Office® (Simulation model)
ART2K0PE Simulation Example for Cadence AWR Microwave Office®
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BLF944P Model for ADS 2021 (Keysight Advanced Design System) (Simulation model)
BLF944P Model for ADS 2021 (Keysight Advanced Design System)
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BLF2425M9L30(S) Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLF2425M9L30(S) Model for ADS 2019 (Keysight Advanced Design System)
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ART2K0PE Model for Cadence AWR Microwave Office® (Simulation model)
ART2K0PE Model for Cadence AWR Microwave Office®
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ART2K0TFES Simulation Example for Cadence AWR Microwave Office® (Simulation model)
ART2K0TFES Simulation Example for Cadence AWR Microwave Office®
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ART2K0TFES Model for Cadence AWR Microwave Office® (Simulation model)
ART2K0TFES Model for Cadence AWR Microwave Office®
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CLF3H0060(S)-10 Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
CLF3H0060(S)-10 Model for ADS 2019 (Keysight Advanced Design System)
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ART450FE Model for Cadence AWR Microwave Office® (Simulation model)
ART450FE Model for Cadence AWR Microwave Office®
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ART450FE Model for ADS 2021 (Keysight Advanced Design System) (Simulation model)
ART450FE Model for ADS 2021 (Keysight Advanced Design System)
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BLC10G22XS-600AVT Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLC10G22XS-600AVT Model for ADS 2019 (Keysight Advanced Design System)
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BLC10G22XS-551AVT Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLC10G22XS-551AVT Model for ADS 2019 (Keysight Advanced Design System)
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ART150PEG Simulation Example for Cadence AWR Microwave Office® (Simulation model)
ART150PEG Simulation Example for Cadence AWR Microwave Office®
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ART150PE Simulation Example for Cadence AWR Microwave Office® (Simulation model)
ART150PE Simulation Example for Cadence AWR Microwave Office®
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BLC10G18XS-552AVT Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLC10G18XS-552AVT Model for ADS 2019 (Keysight Advanced Design System)
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ART35FE Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
ART35FE Model for ADS 2019 (Keysight Advanced Design System)
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ART150FE Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
ART150FE Model for ADS 2019 (Keysight Advanced Design System)
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BLP5LA55S Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLP5LA55S Model for ADS 2019 (Keysight Advanced Design System)
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ART1K6PH Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
ART1K6PH Model for ADS 2019 (Keysight Advanced Design System)
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BLP15H9S10 Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLP15H9S10 Model for ADS 2019 (Keysight Advanced Design System)
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BLM2425M9S20 Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLM2425M9S20 Model for ADS 2019 (Keysight Advanced Design System)
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BLP15H9S100 Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLP15H9S100 Model for ADS 2019 (Keysight Advanced Design System)
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BLP15H9S30 Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLP15H9S30 Model for ADS 2019 (Keysight Advanced Design System)
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BLC10G27XS-400AVT Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLC10G27XS-400AVT Model for ADS 2019 (Keysight Advanced Design System)
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ART700FH Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
ART700FH Model for ADS 2019 (Keysight Advanced Design System)
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BLF188XR Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLF188XR Model for ADS 2019 (Keysight Advanced Design System)
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BLP2425M10S250P Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLP2425M10S250P Model for ADS 2019 (Keysight Advanced Design System)
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BLP05H9S500P Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLP05H9S500P Model for ADS 2016 (Keysight Advanced Design System)
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BLA9H0912L-250 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLA9H0912L-250 Model for ADS 2016 (Keysight Advanced Design System)
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ART2K0FE(S) Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
ART2K0FE(S) Model for ADS 2019 (Keysight Advanced Design System)
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BLC2425M10LS500P Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLC2425M10LS500P Model for ADS 2019 (Keysight Advanced Design System)
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CLF3H0060(S)-30 Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
CLF3H0060(S)-30 Model for ADS 2019 (Keysight Advanced Design System)
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ART150PE Model for Cadence AWR Microwave Office® (Simulation model)
ART150PE Model for Cadence AWR Microwave Office®
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ART150PEG Model for Cadence AWR Microwave Office® (Simulation model)
ART150PEG Model for Cadence AWR Microwave Office®
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ART700FHG Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
ART700FHG Model for ADS 2019 (Keysight Advanced Design System)
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ART2K0FEG Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
ART2K0FEG Model for ADS 2019 (Keysight Advanced Design System)
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ART1K6FHG Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
ART1K6FHG Model for ADS 2019 (Keysight Advanced Design System)
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ART1K6FH(S) Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
ART1K6FH(S) Model for ADS 2019 (Keysight Advanced Design System)
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ART150PEG Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
ART150PEG Model for ADS 2019 (Keysight Advanced Design System)
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ART150PE Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
ART150PE Model for ADS 2019 (Keysight Advanced Design System)
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BLF647P(S) Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLF647P(S) Model for ADS 2019 (Keysight Advanced Design System)
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BLP15H9S30G Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLP15H9S30G Model for ADS 2019 (Keysight Advanced Design System)
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BLP15H9S100G Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLP15H9S100G Model for ADS 2019 (Keysight Advanced Design System)
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ART2K0PE Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
ART2K0PE Model for ADS 2019 (Keysight Advanced Design System)
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BLF978P Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLF978P Model for ADS 2019 (Keysight Advanced Design System)
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BLF974P Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLF974P Model for ADS 2019 (Keysight Advanced Design System)
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BLU9H0408L-800P Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLU9H0408L-800P Model for ADS 2019 (Keysight Advanced Design System)
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BLC10G22XS-602AVT Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLC10G22XS-602AVT Model for ADS 2019 (Keysight Advanced Design System)
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From kW to MW: powering the future of particle acceleration with solid-state technology (Leaflet)
From kW to MW: powering the future of particle acceleration with solid-state technology
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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Earless flanged ceramic package; 2 leads (Outline drawing)
Earless flanged ceramic package; 2 leads
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Air cavity plastic earless flanged package; 8 leads (Outline drawing)
Air cavity plastic earless flanged package; 8 leads
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Air cavity plastic earless flanged package; 6 leads (Outline drawing)
Air cavity plastic earless flanged package; 6 leads
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Air cavity plastic earless flanged package; 6 leads (Outline drawing)
Air cavity plastic earless flanged package; 6 leads
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Air cavity plastic earless flanged package; 8 leads (Outline drawing)
Air cavity plastic earless flanged package; 8 leads
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Plastic earless flanged cavity package; 4 leads (Outline drawing)
Plastic earless flanged cavity package; 4 leads
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Plastic, heatsink small outline package; 4 leads (Outline drawing)
Plastic, heatsink small outline package; 4 leads
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Air cavity plastic earless flanged package; 6 leads (Outline drawing)
Air cavity plastic earless flanged package; 6 leads
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Plastic earless flanged cavity package; 4 leads (Outline drawing)
Plastic earless flanged cavity package; 4 leads
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Air cavity plastic earless flanged package; 2 leads (Outline drawing)
Air cavity plastic earless flanged package; 2 leads
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Air cavity plastic earless flanged package; 4 leads (Outline drawing)
Air cavity plastic earless flanged package; 4 leads
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Air cavity plastic earless flanged package; 6 leads (Outline drawing)
Air cavity plastic earless flanged package; 6 leads
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Plastic; heatsink small outline package; 2 leads (flat) (Outline drawing)
Plastic; heatsink small outline package; 2 leads (flat)
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Plastic, heatsink small outline package; 16 leads(flat) (Outline drawing)
Plastic, heatsink small outline package; 16 leads(flat)
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Plastic; heatsink small outline package; 2 leads (Outline drawing)
Plastic; heatsink small outline package; 2 leads
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HVQFN28: plastic thermal enhanced very thin quad flat package; no leads; 28 terminals; body 5 x 5 x 0.85 mm (Outline drawing)
HVQFN28: plastic thermal enhanced very thin quad flat package; no leads; 28 terminals; body 5 x 5 x 0.85 mm
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Air cavity plastic earless flanged package; 6 leads (Outline drawing)
Air cavity plastic earless flanged package; 6 leads
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Plastic, heatsink small outline package; 16 leads (Outline drawing)
Plastic, heatsink small outline package; 16 leads
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Air cavity plastic earless flanged package; 8 leads (Outline drawing)
Air cavity plastic earless flanged package; 8 leads
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PQFN20: plastic thermal enhanced quad flat package; no leads; 20 terminals; body 8.0 x 8.0 x 2.1 mm (Outline drawing)
PQFN20: plastic thermal enhanced quad flat package; no leads; 20 terminals; body 8.0 x 8.0 x 2.1 mm
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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Air cavity plastic earless flanged package; 4 leadsReel dry pack, SMD, 13"Q2/T3 standard product orientationOrderable part number ending ,518 or YOrdering code (12NC) ending 518 (Packing)
Air cavity plastic earless flanged package; 4 leadsReel dry pack, SMD, 13"Q2/T3 standard product orientationOrderable part number ending ,518 or YOrdering code (12NC) ending 518
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Air cavity plastic earless flanged package; 8 leadsReel dry pack, SMD, 13"Q4/T2 standard product orientationOrderable part number ending ,518 or YOrdering code (12NC) ending 518 (Packing)
Air cavity plastic earless flanged package; 8 leadsReel dry pack, SMD, 13"Q4/T2 standard product orientationOrderable part number ending ,518 or YOrdering code (12NC) ending 518
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HVSON16; Reel dry pack, SMD, 7"Q1/T1 standard product orientationOrderable part number ending ,515 or ZOrdering code (12NC) ending 515 (Packing)
HVSON16; Reel dry pack, SMD, 7"Q1/T1 standard product orientationOrderable part number ending ,515 or ZOrdering code (12NC) ending 515
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LDMOS S-band radar power transistor (Data sheet)
LDMOS S-band radar power transistor
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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Printed-Circuit Board (PCB) ART700FH(S)(G) (Data sheet) (Design support)
Printed-Circuit Board (PCB) ART700FH(S)(G) (Data sheet)
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Printed-Circuit Board (PCB) ART35FE (Data sheet) (Design support)
Printed-Circuit Board (PCB) ART35FE (Data sheet)
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Printed-Circuit Board (PCB) ART1K6PH(G) (Data sheet) (Design support)
Printed-Circuit Board (PCB) ART1K6PH(G) (Data sheet)
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Printed-Circuit Board (PCB) ART150FE (Data sheet) (Design support)
Printed-Circuit Board (PCB) ART150FE (Data sheet)
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Printed-Circuit Board (PCB) ART1K6FH(S)(G) (Data sheet) (Design support)
Printed-Circuit Board (PCB) ART1K6FH(S)(G) (Data sheet)
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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Printed-Circuit Board (PCB) BLF989(S) (Data sheet) (Design support)
Printed-Circuit Board (PCB) BLF989(S) (Data sheet)
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Printed-Circuit Board (PCB) ART150PE(G) (Data sheet) (Design support)
Printed-Circuit Board (PCB) ART150PE(G) (Data sheet)
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Printed-Circuit Board (PCB) ART1K9FH (Data sheet) (Design support)
Printed-Circuit Board (PCB) ART1K9FH (Data sheet)
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Printed-Circuit Board (PCB) ART2K0TFES(G) (Data sheet) (Design support)
Printed-Circuit Board (PCB) ART2K0TFES(G) (Data sheet)
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Printed-Circuit Board (PCB) ART2K5TFUS(G) (Data sheet) (Design support)
Printed-Circuit Board (PCB) ART2K5TFUS(G) (Data sheet)
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Printed-Circuit Board (PCB) ART450FE (Data sheet) (Design support)
Printed-Circuit Board (PCB) ART450FE (Data sheet)
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Printed-Circuit Board (PCB) ART800PE(G) (Data sheet) (Design support)
Printed-Circuit Board (PCB) ART800PE(G) (Data sheet)
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Printed-Circuit Board (PCB) ART2K5TPU (Data sheet) (Design support)
Printed-Circuit Board (PCB) ART2K5TPU (Data sheet)
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Printed-Circuit Board (PCB) ART2K0PE(G) (Data sheet) (Design support)
Printed-Circuit Board (PCB) ART2K0PE(G) (Data sheet)
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BLA9H0912LS-700G Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLA9H0912LS-700G Model for ADS 2016 (Keysight Advanced Design System)
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BLF0910H9LS750P Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF0910H9LS750P Model for ADS 2016 (Keysight Advanced Design System)
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BLSC9G2731XS-200 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLSC9G2731XS-200 Model for ADS 2016 (Keysight Advanced Design System)
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BLF1721M8LS200 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF1721M8LS200 Model for ADS 2016 (Keysight Advanced Design System)
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BLC9G10XS-120A Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLC9G10XS-120A Model for ADS 2016 (Keysight Advanced Design System)
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BLF898 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF898 Model for ADS 2016 (Keysight Advanced Design System)
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BLC9G22LS-120VT Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLC9G22LS-120VT Model for ADS 2016 (Keysight Advanced Design System)
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BLC2425M8LS300P Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLC2425M8LS300P Model for ADS 2016 (Keysight Advanced Design System)
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BLP10H630P Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLP10H630P Model for ADS 2016 (Keysight Advanced Design System)
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BLP8G21S-160PV Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLP8G21S-160PV Model for ADS 2016 (Keysight Advanced Design System)
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BLP8G10S-45PG Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLP8G10S-45PG Model for ADS 2016 (Keysight Advanced Design System)
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BLP7G22-10 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLP7G22-10 Model for ADS 2016 (Keysight Advanced Design System)
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BLP05H6350XR Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLP05H6350XR Model for ADS 2016 (Keysight Advanced Design System)
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BLP05H6250XR Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLP05H6250XR Model for ADS 2016 (Keysight Advanced Design System)
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BLP05H6150XR Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLP05H6150XR Model for ADS 2016 (Keysight Advanced Design System)
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BLP05H675XR Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLP05H675XR Model for ADS 2016 (Keysight Advanced Design System)
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BLP05H635XR Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLP05H635XR Model for ADS 2016 (Keysight Advanced Design System)
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BLL6H1214-500 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLL6H1214-500 Model for ADS 2016 (Keysight Advanced Design System)
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BLL6H1214L-250 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLL6H1214L-250 Model for ADS 2016 (Keysight Advanced Design System)
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BLL6H0514L-130 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLL6H0514L-130 Model for ADS 2016 (Keysight Advanced Design System)
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BLL6H0514-25 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLL6H0514-25 Model for ADS 2016 (Keysight Advanced Design System)
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BLF2425M9LS140 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF2425M9LS140 Model for ADS 2016 (Keysight Advanced Design System)
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BLF2425M7L250P Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF2425M7L250P Model for ADS 2016 (Keysight Advanced Design System)
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BLS7G2729L-350P Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLS7G2729L-350P Model for ADS 2016 (Keysight Advanced Design System)
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BLF888D Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF888D Model for ADS 2016 (Keysight Advanced Design System)
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BLF888A Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF888A Model for ADS 2016 (Keysight Advanced Design System)
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BLF884P Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF884P Model for ADS 2016 (Keysight Advanced Design System)
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BLF642 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF642 Model for ADS 2016 (Keysight Advanced Design System)
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BLS7G2730L-200P Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLS7G2730L-200P Model for ADS 2016 (Keysight Advanced Design System)
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BLS6G2735L-30 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLS6G2735L-30 Model for ADS 2016 (Keysight Advanced Design System)
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BLP35M805 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLP35M805 Model for ADS 2016 (Keysight Advanced Design System)
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BLP27M810 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLP27M810 Model for ADS 2016 (Keysight Advanced Design System)
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BLP10H690P Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLP10H690P Model for ADS 2016 (Keysight Advanced Design System)
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BLP10H660P Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLP10H660P Model for ADS 2016 (Keysight Advanced Design System)
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BLP10H610 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLP10H610 Model for ADS 2016 (Keysight Advanced Design System)
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BLP10H605 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLP10H605 Model for ADS 2016 (Keysight Advanced Design System)
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BLP8G20S-80P Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLP8G20S-80P Model for ADS 2016 (Keysight Advanced Design System)
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BLP8G27-10 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLP8G27-10 Model for ADS 2016 (Keysight Advanced Design System)
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BLF25M612G Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF25M612G Model for ADS 2016 (Keysight Advanced Design System)
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BLF8G38LS-75V Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF8G38LS-75V Model for ADS 2016 (Keysight Advanced Design System)
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BLF8G27LS-150GV Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF8G27LS-150GV Model for ADS 2016 (Keysight Advanced Design System)
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BLF8G27LS-140V Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF8G27LS-140V Model for ADS 2016 (Keysight Advanced Design System)
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BLF8G27LS-100P Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF8G27LS-100P Model for ADS 2016 (Keysight Advanced Design System)
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BLS9G2731L-400 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLS9G2731L-400 Model for ADS 2016 (Keysight Advanced Design System)
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BLS9G2729L-350 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLS9G2729L-350 Model for ADS 2016 (Keysight Advanced Design System)
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BLS9G3135L-400 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLS9G3135L-400 Model for ADS 2016 (Keysight Advanced Design System)
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BLF8G27LS-100GV Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF8G27LS-100GV Model for ADS 2016 (Keysight Advanced Design System)
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BLF8G24L-200P Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF8G24L-200P Model for ADS 2016 (Keysight Advanced Design System)
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BLF8G24LS-150GV Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF8G24LS-150GV Model for ADS 2016 (Keysight Advanced Design System)
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BLP10H6120P Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLP10H6120P Model for ADS 2016 (Keysight Advanced Design System)
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BLF8G24LS-100GV Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF8G24LS-100GV Model for ADS 2016 (Keysight Advanced Design System)
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BLF8G22LS-240 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF8G22LS-240 Model for ADS 2016 (Keysight Advanced Design System)
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BLF8G22LS-205V Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF8G22LS-205V Model for ADS 2016 (Keysight Advanced Design System)
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BLF8G22LS-160BV Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF8G22LS-160BV Model for ADS 2016 (Keysight Advanced Design System)
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BLF8G22LS-140 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF8G22LS-140 Model for ADS 2016 (Keysight Advanced Design System)
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BLF8G20LS-400PGV Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF8G20LS-400PGV Model for ADS 2016 (Keysight Advanced Design System)
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BLP05H6110XR Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLP05H6110XR Model for ADS 2016 (Keysight Advanced Design System)
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BLF8G20LS-160V Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF8G20LS-160V Model for ADS 2016 (Keysight Advanced Design System)
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BLF8G20LS-140GV Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF8G20LS-140GV Model for ADS 2016 (Keysight Advanced Design System)
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BLF8G19LS-170BV Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF8G19LS-170BV Model for ADS 2016 (Keysight Advanced Design System)
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BLF8G10LS-300P Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF8G10LS-300P Model for ADS 2016 (Keysight Advanced Design System)
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BLF8G09LS-400PW Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF8G09LS-400PW Model for ADS 2016 (Keysight Advanced Design System)
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BLF7G27L-140 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF7G27L-140 Model for ADS 2016 (Keysight Advanced Design System)
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BLF6H10L-160 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF6H10L-160 Model for ADS 2016 (Keysight Advanced Design System)
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BLF6G38-50 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF6G38-50 Model for ADS 2016 (Keysight Advanced Design System)
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BLL9G1214LS-600 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLL9G1214LS-600 Model for ADS 2016 (Keysight Advanced Design System)
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BLF189XRA Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF189XRA Model for ADS 2016 (Keysight Advanced Design System)
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BLA9H0912LS-1200P Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLA9H0912LS-1200P Model for ADS 2016 (Keysight Advanced Design System)
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BLF13H9LS750P Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF13H9LS750P Model for ADS 2016 (Keysight Advanced Design System)
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BLF184XR Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF184XR Model for ADS 2016 (Keysight Advanced Design System)
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BLF578XR Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF578XR Model for ADS 2016 (Keysight Advanced Design System)
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BLF183XR Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF183XR Model for ADS 2016 (Keysight Advanced Design System)
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BLF182XR Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF182XR Model for ADS 2016 (Keysight Advanced Design System)
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BLF178XR Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF178XR Model for ADS 2016 (Keysight Advanced Design System)
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BLC2425M9LS250 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLC2425M9LS250 Model for ADS 2016 (Keysight Advanced Design System)
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BLC9G20XS-160AV Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLC9G20XS-160AV Model for ADS 2016 (Keysight Advanced Design System)
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BLC10M6XS200 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLC10M6XS200 Model for ADS 2016 (Keysight Advanced Design System)
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BLC9G20LS-470AVT Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLC9G20LS-470AVT Model for ADS 2016 (Keysight Advanced Design System)
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BLC9G20LS-361AVT Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLC9G20LS-361AVT Model for ADS 2016 (Keysight Advanced Design System)
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BLC9G20LS-160PV Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLC9G20LS-160PV Model for ADS 2016 (Keysight Advanced Design System)
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BLC9G20LS-120V Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLC9G20LS-120V Model for ADS 2016 (Keysight Advanced Design System)
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BLL8H1214L-500 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLL8H1214L-500 Model for ADS 2016 (Keysight Advanced Design System)
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BLL8H1214L-250 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLL8H1214L-250 Model for ADS 2016 (Keysight Advanced Design System)
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BLL8H0514-25 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLL8H0514-25 Model for ADS 2016 (Keysight Advanced Design System)
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BLF0910H6L500 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF0910H6L500 Model for ADS 2016 (Keysight Advanced Design System)
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BLA8G1011L-300 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLA8G1011L-300 Model for ADS 2016 (Keysight Advanced Design System)
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Model Library Manual for Cadence AWR Microwave Office® (Simulation model)
Model Library Manual for Cadence AWR Microwave Office®
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BLF574XR Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF574XR Model for ADS 2016 (Keysight Advanced Design System)
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BLF174XR Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF174XR Model for ADS 2016 (Keysight Advanced Design System)
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BLF7G24L-100 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF7G24L-100 Model for ADS 2016 (Keysight Advanced Design System)
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BLP10H603 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLP10H603 Model for ADS 2016 (Keysight Advanced Design System)
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BLP05H6700XR Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLP05H6700XR Model for ADS 2016 (Keysight Advanced Design System)
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BLA8H0910L-500 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLA8H0910L-500 Model for ADS 2016 (Keysight Advanced Design System)
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BLF871 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF871 Model for ADS 2016 (Keysight Advanced Design System)
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BLS9G2735L(S)-50 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLS9G2735L(S)-50 Model for ADS 2016 (Keysight Advanced Design System)
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BLS9G2934L-400 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLS9G2934L-400 Model for ADS 2016 (Keysight Advanced Design System)
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BLF573 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF573 Model for ADS 2016 (Keysight Advanced Design System)
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BLF571 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF571 Model for ADS 2016 (Keysight Advanced Design System)
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BLA6G1011L-200RG Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLA6G1011L-200RG Model for ADS 2016 (Keysight Advanced Design System)
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BLF574 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF574 Model for ADS 2016 (Keysight Advanced Design System)
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BLF988 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF988 Model for ADS 2016 (Keysight Advanced Design System)
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BLF888B Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF888B Model for ADS 2016 (Keysight Advanced Design System)
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CLF1G0060-10 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
CLF1G0060-10 Model for ADS 2016 (Keysight Advanced Design System)
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CLF1G0035-200P Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
CLF1G0035-200P Model for ADS 2016 (Keysight Advanced Design System)
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BLF578 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLF578 Model for ADS 2016 (Keysight Advanced Design System)
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BLA6H1011-600 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLA6H1011-600 Model for ADS 2016 (Keysight Advanced Design System)
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CLF1G0060-30 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
CLF1G0060-30 Model for ADS 2016 (Keysight Advanced Design System)
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CLF1G0035-100 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
CLF1G0035-100 Model for ADS 2016 (Keysight Advanced Design System)
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CLF1G0035-50 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
CLF1G0035-50 Model for ADS 2016 (Keysight Advanced Design System)
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BLC8G27LS-245AV Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLC8G27LS-245AV Model for ADS 2016 (Keysight Advanced Design System)
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BLC8G27LS-240AV Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLC8G27LS-240AV Model for ADS 2016 (Keysight Advanced Design System)
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BLC8G27LS-180AV Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLC8G27LS-180AV Model for ADS 2016 (Keysight Advanced Design System)
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BLC8G27LS-60AV Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLC8G27LS-60AV Model for ADS 2016 (Keysight Advanced Design System)
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BLC8G24LS-241AV Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLC8G24LS-241AV Model for ADS 2016 (Keysight Advanced Design System)
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BLC8G24LS-240AV Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLC8G24LS-240AV Model for ADS 2016 (Keysight Advanced Design System)
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BLC8G22LS-450AV Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLC8G22LS-450AV Model for ADS 2016 (Keysight Advanced Design System)
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BLC8G20LS-310AV Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLC8G20LS-310AV Model for ADS 2016 (Keysight Advanced Design System)
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BLA6H0912L-1000 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLA6H0912L-1000 Model for ADS 2016 (Keysight Advanced Design System)
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BLP7G22-05 Model for ADS 2016 (Keysight Advanced Design System) (Simulation model)
BLP7G22-05 Model for ADS 2016 (Keysight Advanced Design System)
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针对下述应用的RF 功率解决方案 广播, 航空航天和国防 工业、科学和医疗 (Brochure)
针对下述应用的RF 功率解决方案 广播, 航空航天和国防 工业、科学和医疗
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RF power solutions for ISM, broadcast, navigation and safety radio applications (Brochure)
RF power solutions for ISM, broadcast, navigation and safety radio applications
Download document -
RF power application reports for ISM, broadcast, navigation and safety radio applications (Brochure)
RF power application reports for ISM, broadcast, navigation and safety radio applications
Download document -
RF beauty devices – skin, body & rejuvenation applications powered by LDMOS (Leaflet)
RF beauty devices – skin, body & rejuvenation applications powered by LDMOS
Download document -
BLL9G1214L(S)-600 Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLL9G1214L(S)-600 Model for ADS 2019 (Keysight Advanced Design System)
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BLF8G22LS-140 Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLF8G22LS-140 Model for ADS 2019 (Keysight Advanced Design System)
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BLC9G22LS-120VT Model for ADS 2019 (Keysight Advanced Design System) (Simulation model)
BLC9G22LS-120VT Model for ADS 2019 (Keysight Advanced Design System)
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Measurement results of a Class-AB design for the 1.8–54 MHz band with ART450FE (Report)
Measurement results of a Class-AB design for the 1.8–54 MHz band with ART450FE
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RF power transistor ART2K0TFE/PE with integrated thermal sense FET (Application note)
RF power transistor ART2K0TFE/PE with integrated thermal sense FET
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No packages found for "ART"
115 news items found for "ART"
-
Ampleon en HAS Hogeschool doen gezamenlijk onderzoek aan full spectrum verlichting voor tuinbouwtoepassingen
February 09, 2016
-
앰플레온, 국제 마이크로웨이브 심포지엄(IMS)에서초고속 무선통신용 전력 증폭기 등 최신 기술 발표
April 14, 2016
-
Ampleon stellt auf der European Microwave Week 2017 neue Produkte vor und hält Vorträge
April 14, 2016
-
Ampleon präsentiert Innovationen beim IMS
April 14, 2016
-
I transistor di potenza LDMOS RF a elevata affidabilità di Ampleon per applicazioni nelle bande HF, VHF e ISM sono ora disponibili in package plastico OMP di costo contenuto
January 13, 2016
-
Ampleons robuste LDMOS-HF-Leistungstransistoren für HF-, VHF- und ISM-Anwendungen stehen nun in kostengünstigen vergossenen Gehäusen bereit
January 13, 2016
-
埃賦隆半導體參加EDI CON 2018大會
埃賦隆半導體(Ampleon)今天宣佈其參加3月20日至3月22日在中國北京舉行的電子設計創新大會(EDI CON)的詳細資訊。
-
Kompaktes zweistufiges 250W/2,4GHz-Modul mit 50 Ω-Ein-/Ausgängen vereinfacht die Integration
Ampleon stellt das kompakte zweistufige 250W-LDMOS-HF-Leistungsmodul BPC2425M9X2S250-1 vor.
-
Modulo compatto da 250 W a doppio stadio per applicazioni a 2,4 GHz con ingressi/uscite a 50 Ohm semplifica il processo di integrazione
-
Hochleistungs-HF-Transistor für industrielle und professionelle HF-Energieanwendungen
-
Transistor RF a elevata potenza per applicazioni che utilizzano l'energia RF nei settori professionale e industriale
-
Hocheffizienter 750 W-HF-Leistungstransistor ermöglicht bei 915 MHz kompaktere Leistungsverstärker-Designs
-
Transistor di potenza RF da 750 W a 915 MHz consente di progettare amplificatori di potenza più compatti
-
Ampleon stellt den branchenweit robustesten 2KW HF-LDMOS-Transistor für ISM-Anwendungen vor
-
Ampleon annuncia il più robusto transistor di potenza RF da 2 KW in tecnologia LDMOS per applicazioni ISM
-
埃賦隆宣佈面向ISM應用推出業界最耐用的2kW RF功率LDMOS電晶體
-
埃赋隆宣布面向ISM应用推出业界最耐用的2kW RF功率LDMOS晶体管
-
Ampleon stellt den robustesten 12V-LDMOS Breitband-HF-Leistungsverstärker für Mobilfunkanwendungen vor
-
埃賦隆半導體推出全新高功能通用寬頻LDMOS晶體管,以適應廣播電視、工業、科學和醫療應用
-
埃赋隆半导体推出全新高功能通用宽带LDMOS晶体管,以适应广播电视、工业、科学和医疗应用
-
Student Design Competition at European Microwave Week (EuMW) 2019
-
Compact 250 W dual-stage 2.4 GHz module with 50 Ohm input/outputs eases integration complexity
Ampleon announced the compact dual-stage 250 Watt LDMOS RF power module BPC2425M9X2S250-1.
-
High power RF transistor targets industrial and professional RF Energy applications
-
Ampleon secures refinancing to drive growth
-
European Microwave Week (EuMW) 2024
-
European Microwave Week (EuMW) 2023
-
International Microwave Symposium (IMS) 2023
-
International Microwave Symposium (IMS) 2022
-
International Microwave Symposium (IMS) 2019
-
European Microwave Week (EuMW) 2019
-
European Microwave Week (EuMW) 2018
-
International Microwave Symposium (IMS) 2018
-
Electronic Design Innovation Conference (EDI CON) 2018
-
International Exhibition for Information and Communications Technology (SVIAZ) 2018
-
European Microwave Week (EuMW) 2017
-
International Microwave Symposium (IMS) 2017
-
Electronic Design Innovation Conference (EDI CON) 2017
-
European Microwave Week (EuMW) 2016
-
Ampleon boosts GaN-on-SiC HEMT transistor performance with the release of Generation 3
-
New 1900 W RF LDMOS transistor from Ampleon delivers maximum power and ruggedness at 50 / 55 V
-
Ampleon unveils new 800 W extremely rugged ART LDMOS RF power transistors for industrial, scientific, and medical applications
-
Ampleon’s “new” standard for L-band, GaN-SiC HEMT
-
Ampleon is showcasing several new products at the IEEE International Microwave Symposium 2022
-
Ampleon extends isolator-free sub-6 GHz line-ups with compact multistage Doherty MMIC drivers for 5G NR and 4G LTE macro base station applications
-
Ampleon unveils advanced extremely rugged high-power solid state power amplifiers
-
Ampleon extends LDMOS base station and multi-carrier line up with the introduction of 400 W rugged Doherty RF power transistor
-
Ampleon – il partner globale di riferimento per la potenza RF
December 07, 2015
-
Ampleon - de toonaangevende leverancier van RF Power componenten
December 07, 2015
-
Newsletter sign-up
-
Ampleon introduces new highly versatile wideband LDMOS transistors to address broadcast, industrial, scientific and medical applications
-
ESD Human Body Model step stress distributions of GaN HEMTs and the correlation with one level test results
-
From the Philippines to the Netherlands: a journey of growth
-
From engineer to strategic leader: Rodel Escarez’s transformative journey through Ampleon's graduate scholarship program
-
A journey through IT transformation. Ampleon’s evolution and future
-
Driving business success through HR transformation. Ampleon’s journey to a high-performance culture
-
Behind the scenes with an RF Characterization Engineer
-
Thermal characteristics of GaN power transistors
-
New Ampleon 2.4 GHz GaN line-up simplifies magnetron replacement in ISM systems
-
Ampleon cost-optimised 250 W LDMOS for 2.45 GHz ISM applications and solid-state cooking
-
Ampleon highlights virtual IMS 2020 conference and exhibition plans
-
Ampleon simplifies RF amplifier system design with launch of 600-Watt 915 MHz ISM pallet
-
Highly efficient rugged 800-Watt LDMOS RF power transistor designed for long-range UHF radar systems
-
New RF power transistors and ultra-wideband Doherty amplifiers for use in next-generation TV broadcast transmitters
-
Fully integrated Doherty power amplifier devices enhance small cell & mMIMO driver systems
-
High-efficiency 750 W RF power transistor at 915 MHz enables more compact power amplifier designs
-
Ampleon launches the industry’s most rugged 12 V LDMOS power amplifiers for land mobile radio
-
Ampleon to showcase breakthrough RF power technology and present latest technical papers at IMS 2019
-
Ampleon releases “breakthrough” Si LDMOS devices reaching 80 % efficiency for VHF and UHF applications
-
Ampleon releases the industry’s most efficient 500-Watt LDMOS transistor operating in the 433 MHz band
-
Ampleon announces significant presence at European Microwave Week (EuMW) 2019
-
Ampleon announces the industry’s most rugged 2 kW RF power LDMOS transistor for ISM applications
-
Ampleon leads RF power efficiency with launch of 62 % efficient Gen9HV LDMOS transistor for particle accelerators
-
Highly efficient 1600 Watt extremely rugged RF power transistor targets 50 V FM radio broadcast applications
-
Ampleon launches first Gen9HV LDMOS 140 Watt RF PA transistor for UHF broadcast applications
-
Rugged 250 Watt RF PA transistor delivers 69 % energy efficiency and withstands VSWR 20:1 on all phases
-
Ampleon announces IMS 2018 conference sessions and booth demonstration highlights
-
Ampleon to showcase leading RF power products at European Microwave Week 2018
-
200 Watt LDMOS matched input/output amplifier module speeds development of 433 MHz systems
-
Ampleon issues update on investor status
-
Ampleon launches first devices using Gen9HV 50 V base station optimised process
-
Compact SOT502 ISM band RF PA transistor delivers 600 Watts for RF energy applications
Ampleon announced the launch of the 600 Watt BLF0910H9LS600 LDMOS power amplifier transistor.
-
Ampleon participates in EDI CON 2018
-
Wide-band 20 Watt single-stage driver yields high efficiency, gain and extremely low thermal resistance
-
Ampleon rolls-out new products and presents technical papers at European Microwave Week 2017
April 14, 2016
-
Ampleon delivers lower power consumption and increased efficiency for wireless infrastructure PAs
-
Ampleon showcases LDMOS and GaN RF PA portfolio and high power RF solutions at EDI CON
-
Ampleon launch ISM signal generator IC for RF energy applications
-
Ampleon showcases LDMOS and GaN RF PA portfolio and high power RF solutions at IMS
Ampleon today announced its participation at the forthcoming International Microwave Symposium, IMS.
-
Update on investor structure
-
ITAR-free S-band SWaP optimised pallets speed time to market for radar applications
May 23, 2016
-
Ampleon extends line up of Gen 9 LDMOS RF transistors and pallets
October 04, 2016
-
Ampleon demonstrates wideband system solution featuring Xilinx DPD IP at IMS 2016
May 24, 2016
-
Ampleon launch ultra compact two-stage Doherty amplifier for 4.5 G / LTE Advanced Pro applications
September 27, 2016
-
Credit card sized 250 Watt 2.4–2.5 GHz reference design targets RF cooking and industrial heating applications
May 24, 2016
-
Ampleon opens RF Energy Competence Center in Hefei
October 04, 2016
-
RF power reference guide available for download
May 19, 2016
-
Ampleon adds 1900 Watt LDMOS power transistor to its extremely rugged line-up
October 03, 2016
-
Ampleon 1 kW 2.4 GHz compact RF energy reference system targets industrial heating market and drives magnetron replacement
October 04, 2016
-
Ampleon unveils full portfolio of PA solutions for small cells and massive MIMO
May 18, 2016
-
Ampleon and HAS University collaborate on full spectrum lighting research for horticultural applications
February 09, 2016
-
Ampleon GaN RF transistor family complements LDMOS portfolio with high-efficiency and wideband solutions for mobile broadband
May 17, 2016
-
Ampleon showcases latest innovations at IMS
April 14, 2016
-
Ampleon’s extremely rugged LDMOS RF power transistors for HF, VHF and ISM applications now available in cost effective overmoulded packages
January 13, 2016
-
RF transistor delivers > 50 % efficiency at 150 W DVB-T for ultra wideband asymmetrical Doherty applications
March 08, 2016
-
1400 CW extremely rugged reliable RF transistor withstands VSWR > 65:1
May 03, 2016
-
Ampleon showcases RF energy innovations at EDI CON
April 07, 2016
-
Ampleon and Midea collaboration results in world’s first solid state oven
March 21, 2016
-
Innovative air cavity packaging brings significant cost reductions and performance improvements to RF transistors used in wireless infrastructure
May 12, 2016
-
Ampleon introduces GaN RF power transistors in 10 to 200 W ratings
December 14, 2015
-
Ampleon - the leading global partner in RF power
December 07, 2015
-
Press releases
-
International Particle Acceleration Conference (IPAC) 2025
-
International Microwave Symposium (IMS) 2025
-
Events
-
Asking bold questions: a conversation with a Principal RF Engineer and Women-in-Tech Role Model
165 pages found for "ART"
-
Ampleon en HAS Hogeschool doen gezamenlijk onderzoek aan full spectrum verlichting voor tuinbouwtoepassingen
-
앰플레온, 국제 마이크로웨이브 심포지엄(IMS)에서초고속 무선통신용 전력 증폭기 등 최신 기술 발표
-
Ampleon stellt auf der European Microwave Week 2017 neue Produkte vor und hält Vorträge
-
Ampleon präsentiert Innovationen beim IMS
-
I transistor di potenza LDMOS RF a elevata affidabilità di Ampleon per applicazioni nelle bande HF, VHF e ISM sono ora disponibili in package plastico OMP di costo contenuto
-
Ampleons robuste LDMOS-HF-Leistungstransistoren für HF-, VHF- und ISM-Anwendungen stehen nun in kostengünstigen vergossenen Gehäusen bereit
-
埃賦隆半導體參加EDI CON 2018大會
埃賦隆半導體(Ampleon)今天宣佈其參加3月20日至3月22日在中國北京舉行的電子設計創新大會(EDI CON)的詳細資訊。
-
Kompaktes zweistufiges 250W/2,4GHz-Modul mit 50 Ω-Ein-/Ausgängen vereinfacht die Integration
Ampleon stellt das kompakte zweistufige 250W-LDMOS-HF-Leistungsmodul BPC2425M9X2S250-1 vor.
-
Modulo compatto da 250 W a doppio stadio per applicazioni a 2,4 GHz con ingressi/uscite a 50 Ohm semplifica il processo di integrazione
-
Hochleistungs-HF-Transistor für industrielle und professionelle HF-Energieanwendungen
-
Transistor RF a elevata potenza per applicazioni che utilizzano l'energia RF nei settori professionale e industriale
-
Hocheffizienter 750 W-HF-Leistungstransistor ermöglicht bei 915 MHz kompaktere Leistungsverstärker-Designs
-
Transistor di potenza RF da 750 W a 915 MHz consente di progettare amplificatori di potenza più compatti
-
Ampleon stellt den branchenweit robustesten 2KW HF-LDMOS-Transistor für ISM-Anwendungen vor
-
Ampleon annuncia il più robusto transistor di potenza RF da 2 KW in tecnologia LDMOS per applicazioni ISM
-
埃賦隆宣佈面向ISM應用推出業界最耐用的2kW RF功率LDMOS電晶體
-
埃赋隆宣布面向ISM应用推出业界最耐用的2kW RF功率LDMOS晶体管
-
Ampleon stellt den robustesten 12V-LDMOS Breitband-HF-Leistungsverstärker für Mobilfunkanwendungen vor
-
Products
-
Downloads
-
Terms of Service
-
埃賦隆半導體推出全新高功能通用寬頻LDMOS晶體管,以適應廣播電視、工業、科學和醫療應用
-
埃赋隆半导体推出全新高功能通用宽带LDMOS晶体管,以适应广播电视、工业、科学和医疗应用
-
Air-Cavity Ceramic (ACC) packages
-
Air-Cavity Plastic (ACP) packages
-
Overmolded Plastic (OMP) packages
-
Contact recruitment
-
Submission received
Thank you for your interest in Ampleon. Your submission has been received.
-
Student Design Competition at European Microwave Week (EuMW) 2019
-
Where to buy
-
RF Power Lifetime Calculator
-
Empowering next-generation Macro base stations
-
Compact 250 W dual-stage 2.4 GHz module with 50 Ohm input/outputs eases integration complexity
Ampleon announced the compact dual-stage 250 Watt LDMOS RF power module BPC2425M9X2S250-1.
-
High power RF transistor targets industrial and professional RF Energy applications
-
Ampleon secures refinancing to drive growth
-
European Microwave Week (EuMW) 2024
-
European Microwave Week (EuMW) 2023
-
International Microwave Symposium (IMS) 2023
-
International Microwave Symposium (IMS) 2022
-
International Microwave Symposium (IMS) 2019
-
European Microwave Week (EuMW) 2019
-
European Microwave Week (EuMW) 2018
-
International Microwave Symposium (IMS) 2018
-
Electronic Design Innovation Conference (EDI CON) 2018
-
International Exhibition for Information and Communications Technology (SVIAZ) 2018
-
European Microwave Week (EuMW) 2017
-
International Microwave Symposium (IMS) 2017
-
Electronic Design Innovation Conference (EDI CON) 2017
-
European Microwave Week (EuMW) 2016
-
Ampleon boosts GaN-on-SiC HEMT transistor performance with the release of Generation 3
-
New 1900 W RF LDMOS transistor from Ampleon delivers maximum power and ruggedness at 50 / 55 V
-
Ampleon unveils new 800 W extremely rugged ART LDMOS RF power transistors for industrial, scientific, and medical applications
-
Ampleon’s “new” standard for L-band, GaN-SiC HEMT
-
Ampleon is showcasing several new products at the IEEE International Microwave Symposium 2022
-
Ampleon extends isolator-free sub-6 GHz line-ups with compact multistage Doherty MMIC drivers for 5G NR and 4G LTE macro base station applications
-
Ampleon unveils advanced extremely rugged high-power solid state power amplifiers
-
Ampleon extends LDMOS base station and multi-carrier line up with the introduction of 400 W rugged Doherty RF power transistor
-
Ampleon – il partner globale di riferimento per la potenza RF
-
Ampleon - de toonaangevende leverancier van RF Power componenten
-
RF design tools
-
Contact
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Newsletter sign-up
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Ampleon introduces new highly versatile wideband LDMOS transistors to address broadcast, industrial, scientific and medical applications
-
Management Board
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Terms of Use
This page outlines the Terms of Use for the Ampleon website.
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Mechanical Back-End Lead, Back-End Technology
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Terms and conditions of commercial sale, version NL
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General terms and conditions of purchase
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Code of Conduct
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Terms and Policies
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Distribution partners
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Terms and conditions of commercial sale, version USA
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Privacy Statement
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General terms and conditions of sale
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Cookie Policy
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RF DesignCare
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Sustainability
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Quality
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FAQ
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Support
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RF power simulation models
-
ESD Human Body Model step stress distributions of GaN HEMTs and the correlation with one level test results
-
From the Philippines to the Netherlands: a journey of growth
-
From engineer to strategic leader: Rodel Escarez’s transformative journey through Ampleon's graduate scholarship program
-
A journey through IT transformation. Ampleon’s evolution and future
-
Driving business success through HR transformation. Ampleon’s journey to a high-performance culture
-
Behind the scenes with an RF Characterization Engineer
-
The ART of transforming dreams into reality
-
Thermal characteristics of GaN power transistors
-
Our culture
-
New Ampleon 2.4 GHz GaN line-up simplifies magnetron replacement in ISM systems
-
Discontinued and replacement parts
-
From kW to MW: powering the future of particle acceleration with solid-state technology
-
RF beauty devices – skin, body & rejuvenation applications powered by LDMOS
-
Ampleon cost-optimised 250 W LDMOS for 2.45 GHz ISM applications and solid-state cooking
-
Ampleon highlights virtual IMS 2020 conference and exhibition plans
-
Ampleon simplifies RF amplifier system design with launch of 600-Watt 915 MHz ISM pallet
-
Highly efficient rugged 800-Watt LDMOS RF power transistor designed for long-range UHF radar systems
-
New RF power transistors and ultra-wideband Doherty amplifiers for use in next-generation TV broadcast transmitters
-
Fully integrated Doherty power amplifier devices enhance small cell & mMIMO driver systems
-
High-efficiency 750 W RF power transistor at 915 MHz enables more compact power amplifier designs
-
Ampleon launches the industry’s most rugged 12 V LDMOS power amplifiers for land mobile radio
-
Ampleon to showcase breakthrough RF power technology and present latest technical papers at IMS 2019
-
Ampleon releases “breakthrough” Si LDMOS devices reaching 80 % efficiency for VHF and UHF applications
-
Ampleon releases the industry’s most efficient 500-Watt LDMOS transistor operating in the 433 MHz band
-
Ampleon announces significant presence at European Microwave Week (EuMW) 2019
-
Ampleon announces the industry’s most rugged 2 kW RF power LDMOS transistor for ISM applications
-
Ampleon leads RF power efficiency with launch of 62 % efficient Gen9HV LDMOS transistor for particle accelerators
-
Highly efficient 1600 Watt extremely rugged RF power transistor targets 50 V FM radio broadcast applications
-
Ampleon launches first Gen9HV LDMOS 140 Watt RF PA transistor for UHF broadcast applications
-
Rugged 250 Watt RF PA transistor delivers 69 % energy efficiency and withstands VSWR 20:1 on all phases
-
Ampleon announces IMS 2018 conference sessions and booth demonstration highlights
-
Ampleon to showcase leading RF power products at European Microwave Week 2018
-
200 Watt LDMOS matched input/output amplifier module speeds development of 433 MHz systems
-
Ampleon issues update on investor status
-
Product longevity
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Annual Report
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Greenhouse gases
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Substances of concern
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Conflict Minerals Policy
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Chemical content
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Electronic Product Change Notification (ePCN)
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ISO certification
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Supplier quality management
-
Base station product finder
-
Ampleon launches first devices using Gen9HV 50 V base station optimised process
-
Compact SOT502 ISM band RF PA transistor delivers 600 Watts for RF energy applications
Ampleon announced the launch of the 600 Watt BLF0910H9LS600 LDMOS power amplifier transistor.
-
Ampleon participates in EDI CON 2018
-
Wide-band 20 Watt single-stage driver yields high efficiency, gain and extremely low thermal resistance
-
Ampleon rolls-out new products and presents technical papers at European Microwave Week 2017
-
Ampleon delivers lower power consumption and increased efficiency for wireless infrastructure PAs
-
Ampleon showcases LDMOS and GaN RF PA portfolio and high power RF solutions at EDI CON
-
Ampleon launch ISM signal generator IC for RF energy applications
-
Ampleon showcases LDMOS and GaN RF PA portfolio and high power RF solutions at IMS
Ampleon today announced its participation at the forthcoming International Microwave Symposium, IMS.
-
Update on investor structure
-
ITAR-free S-band SWaP optimised pallets speed time to market for radar applications
-
Ampleon extends line up of Gen 9 LDMOS RF transistors and pallets
-
Ampleon demonstrates wideband system solution featuring Xilinx DPD IP at IMS 2016
-
Ampleon launch ultra compact two-stage Doherty amplifier for 4.5 G / LTE Advanced Pro applications
-
Credit card sized 250 Watt 2.4–2.5 GHz reference design targets RF cooking and industrial heating applications
-
Ampleon opens RF Energy Competence Center in Hefei
-
RF power reference guide available for download
-
Ampleon adds 1900 Watt LDMOS power transistor to its extremely rugged line-up
-
Ampleon 1 kW 2.4 GHz compact RF energy reference system targets industrial heating market and drives magnetron replacement
-
Ampleon unveils full portfolio of PA solutions for small cells and massive MIMO
-
Ampleon and HAS University collaborate on full spectrum lighting research for horticultural applications
-
Ampleon GaN RF transistor family complements LDMOS portfolio with high-efficiency and wideband solutions for mobile broadband
-
Ampleon showcases latest innovations at IMS
-
Ampleon’s extremely rugged LDMOS RF power transistors for HF, VHF and ISM applications now available in cost effective overmoulded packages
-
RF transistor delivers > 50 % efficiency at 150 W DVB-T for ultra wideband asymmetrical Doherty applications
-
1400 CW extremely rugged reliable RF transistor withstands VSWR > 65:1
-
Ampleon showcases RF energy innovations at EDI CON
-
Ampleon and Midea collaboration results in world’s first solid state oven
-
Innovative air cavity packaging brings significant cost reductions and performance improvements to RF transistors used in wireless infrastructure
-
Ampleon introduces GaN RF power transistors in 10 to 200 W ratings
-
Ampleon - the leading global partner in RF power
-
MultiMarket application finder
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Packages
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Press releases
-
International Particle Acceleration Conference (IPAC) 2025
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International Microwave Symposium (IMS) 2025
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Events
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About
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Asking bold questions: a conversation with a Principal RF Engineer and Women-in-Tech Role Model
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Careers