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105 products found for "ART"

  • ART35FE

    Based on Advanced Rugged Technology (ART) a 35 W LDMOS transistor for ISM application has been designed. This unmatched device covers a frequency range of 1 MHz to 650 MHz.

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  • ART2K0FE

    Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

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  • ART1K6PH

    Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.

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  • ART150PE

    Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz

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  • ART700FH

    Based on Advanced Rugged Technology (ART), this 700 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and non cellular communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.

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  • ART150FE

    Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor hasbeen designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz.

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  • ART1K6FH

    Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 425 MHz.

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  • ART2K0PE

    Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.

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  • ART450FE

    Based on Advanced Rugged Technology (ART), this 450 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz.

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  • ART800PE

    Based on Advanced Rugged Technology (ART), this 800 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz.

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  • ART1K9FH

    Based on Advanced Rugged Technology (ART), this 1900 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 500 MHz.

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  • ART1K6PHG

    Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.

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  • ART1K6FHG

    Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 425 MHz.

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  • ART150PEG

    Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz

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  • ART700FHG

    Based on Advanced Rugged Technology (ART), this 700 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and non cellular communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.

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  • ART2K0FES

    Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

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  • ART700FHS

    Based on Advanced Rugged Technology (ART), this 700 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and non cellular communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.

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  • ART2K0FEG

    Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

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  • ART1K6FHS

    Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 425 MHz.

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  • ART2K0PEG

    Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.

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  • ART800PEG

    Based on Advanced Rugged Technology (ART), this 800 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz.

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  • ART2K5TPU

    Based on Advanced Rugged Technology (ART), this 2500 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

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  • BLF368

    This product has been discontinued. Click here for discontinuation information.

    Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262A1 balanced flange package, with two ceramic caps. The mounting flange provides the common source connection for the transistors.

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  • ART2K0TFEG

    Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

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  • ART2K0TFES

    Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

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  • ART2K5TFUS

    Based on Advanced Rugged Technology (ART), this 2500 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

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  • ART2K5TFUG

    Based on Advanced Rugged Technology (ART), this 2500 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

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  • BLM6G22-30

    This product has been discontinued. Click here for discontinuation information.

    30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead (SOT834-1).

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  • BLM6G10-30

    This product has been discontinued. Click here for discontinuation information.
    The replacement is: BLM8G0710S-30PB

    30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz. Available in Gull Wing for surface mount (SOT822-1) or flat lead (SOT834-1)

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  • BLD6G21L-50

    This product has been discontinued. Click here for discontinuation information.

    The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution using Ampleon’s state of the art GEN6 LDMOS technology. This device is perfectly suited for TD-SCDMA base station applications at frequencies from 2010 MHz to 2025 MHz. The main and peak device, input splitter and output combiner are integrated in a single package. This package consists of one gate and drain lead and two extra leads of which one is used for biasing the peak amplifier and the other is not connected. It only requires the proper input/output match and bias setting as with a normal class-AB transistor.

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  • BLD6G22L-50

    This product has been discontinued. Click here for discontinuation information.

    The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using Ampleon’s state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequencies from 2110 MHz to 2170 MHz. The main and peak device, input splitter and output combiner are integrated in a single package. This package consists of one gate and drain lead and two extra leads of which one is used for biasing the peak amplifier and the other is not connected. It only requires the proper input/output match and bias setting as with a normal class-AB transistor.

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  • BLM6G22-30G

    This product has been discontinued. Click here for discontinuation information.
    The replacement is: BLM7G1822S-40PBG

    30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead (SOT834-1).

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  • BLM6G10-30G

    This product has been discontinued. Click here for discontinuation information.

    30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz. Available in Gull Wing for surface mount (SOT822-1) or flat lead (SOT834-1)

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  • BLF6G22S-45

    This product has been discontinued. Click here for discontinuation information.

    45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

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  • BLD6G21LS-50

    This product has been discontinued. Click here for discontinuation information.

    The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution using Ampleon’s state of the art GEN6 LDMOS technology. This device is perfectly suited for TD-SCDMA base station applications at frequencies from 2010 MHz to 2025 MHz. The main and peak device, input splitter and output combiner are integrated in a single package. This package consists of one gate and drain lead and two extra leads of which one is used for biasing the peak amplifier and the other is not connected. It only requires the proper input/output match and bias setting as with a normal class-AB transistor.

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  • BLD6G22LS-50

    This product has been discontinued. Click here for discontinuation information.

    The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using Ampleon’s state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequencies from 2110 MHz to 2170 MHz. The main and peak device, input splitter and output combiner are integrated in a single package. This package consists of one gate and drain lead and two extra leads of which one is used for biasing the peak amplifier and the other is not connected. It only requires the proper input/output match and bias setting as with a normal class-AB transistor.

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  • B10G3741N55D

    The B10G3741N55D is a 3-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as a final stage for small cells and massive MIMO applications in the frequency range from 3700 MHz to 4100 MHz. Available in PQFN outline.

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  • BLF6G22LS-75

    This product has been discontinued. Click here for discontinuation information.

    75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

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  • B10G3438N55D

    The B10G3438N55D is a 3-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as a final stage for small cells and massive MIMO applications in the frequency range from 3400 MHz to 3800 MHz. Available in PQFN outline.

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  • B11G3338N81D

    The B11G3338N81D is a dual section 3-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range 3300 MHz to 3800 MHz. Available in PQFN outline.

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  • B10G2327N55D

    The B10G2327N55D is a 2-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This device is perfectly suited as general purpose driver or mMIMO final in the frequency range from 2300 MHz to 2700 MHz. Available in PQFN outline.

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  • B11G1822N60D

    The B11G1822N60D is a dual section 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range 1800 MHz to 2200 MHz. Available in PQFN outline.

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  • B11G3742N81D

    The B11G3742N81D is a dual section 3-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range 3700 MHz to 4200 MHz. Available in PQFN outline.

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  • BLF13H9L750P

    750 W LDMOS power transistor in SOT539 push pull package for accelerator applications at a frequency of 1.3 GHz.

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  • B11G2327N71D

    The B11G2327N71D is a dual path 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as general purpose driver in the frequency range 2300 MHz to 2700 MHz. Available in PQFN outline.

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  • B11G3338N80D

    This product has been discontinued. Click here for discontinuation information.
    The replacement is: B11G3338N81D

    The B11G3338N80D is a dual section 3-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range 3300 MHz to 3800 MHz. Available in PQFN outline.

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  • B10H0710N40D

    The B10H0710N40D is a dual section 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art 50 V LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range 700 MHz to 1 GHz. Available in LGA outline.

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  • B11G2327N70D

    This product has been discontinued. Click here for discontinuation information.
    The replacement is: B11G2327N71D

    The B11G2327N70D is a dual path 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as general purpose driver in the frequency range 2300 MHz to 2700 MHz. Available in PQFN outline.

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  • BLM9D2327-25B

    This product has been discontinued. Click here for discontinuation information.
    The replacement is: BLM9D2327-26B

    The BLM9D2327-25B is a 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 2300 MHz to 2700 MHz. Available in PQFN outline.

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  • BLM9D2327-26B

    The BLM9D2327-26B is a thermally enhanced 2-stage fully integrated MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 2300 MHz to 2700 MHz. Available in PQFN outline.

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  • BLM9D1822-30B

    The BLM9D1822-30B is a 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1800 MHz to 2200 MHz. Available in PQFN outline.

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  • BLF13H9LS750P

    750 W LDMOS power transistor in SOT539 push pull package for accelerator applications at a frequency of 1.3 GHz.

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  • BLM7G24S-30BG

    This product has been discontinued. Click here for discontinuation information.

    The BLM7G24S-30BG is a 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This device is perfectly suited as general purpose driver in the frequency range from 2100 MHz to 2400 MHz. Available in gull wing.

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  • B10G3336N16DL

    The B10G3336N16DL is a 3-stage 16 W fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner, and output matching are integrated in a single package. This multiband device is perfectly suited as a general-purpose device in the frequency range from 3300 MHz to 3600 MHz. Available in LGA outline.

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  • B10G4750N12DL

    The B10G4750N12DL is a 3-stage 12 W fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner, and output matching are integrated in a single package. This multiband device is perfectly suited as a general purpose device in the frequency range from 4700 MHz to 5000 MHz. Available in LGA outline.

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  • BLM7G22S-60PB

    This device has been transferred from Ampleon to Flip Electronics.

    The BLM7G22S-60PB(G) is a dual path 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This device is perfectly suited as general purpose driver in the frequency range from 2100 MHz to 2200 MHz. Available in gull wing or flat lead outline.

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  • BLM9D2325-20AB

    This product has been discontinued. Click here for discontinuation information.
    The replacement is: BLM9D2327-26B

    The BLM9D2325-20AB is a 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a final device in massive MIMO or small cell applications in the frequency range from 2300 MHz to 2500 MHz. Available in PQFN outline.

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  • BLM9D2527-20AB

    This product has been discontinued. Click here for discontinuation information.
    The replacement is: BLM9D2327-26B

    The BLM9D2527-20AB is a 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a final device in massive MIMO or small cell applications in the frequency range from 2500 MHz to 2700 MHz. Available in PQFN outline.

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  • BLM9D1819-08AM

    The BLM9D1819-08AM is a 2-stage 8 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 1805 MHz to 1880 MHz. Available in LGA outline.

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  • BLM9D2022-08AM

    The BLM9D2022-08AM is a 2-stage 8 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 2110 MHz to 2170 MHz. Available in LGA outline.

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  • BLM9D2324-08AM

    The BLM9D2324-08AM is a 2-stage 8 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 2300 MHz to 2400 MHz. Available in LGA outline.

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  • BLM9D1920-08AM

    The BLM9D1920-08AM is a 2-stage 8 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 1880 MHz to 2025 MHz. Available in LGA outline.

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  • BLM9D2527-09AM

    The BLM9D2527-09AM is a 2-stage 9 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 2496 MHz to 2700 MHz. Available in LGA outline.

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  • BLM9D0708-05AM

    The BLM9D0708-05AM is a 1-stage 5 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 728 MHz to 821 MHz. Available in LGA outline.

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  • BLM9D0910-05AM

    The BLM9D0910-05AM is a 1-stage 5 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 859 MHz to 960 MHz. Available in LGA outline.

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  • BLM9D3336-12AM

    The BLM9D3336-12AM is a 3-stage 12 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 3300 MHz to 3650 MHz. Available in LGA outline.

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  • BLM9D3538-12AM

    The BLM9D3538-12AM is a 3-stage 12 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 3400 MHz to 3800 MHz. Available in LGA outline.

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  • BLM7G22S-60PBG

    This product has been discontinued. Click here for discontinuation information.
    The replacement is: BLM8D1822S-50PBG

    The BLM7G22S-60PB(G) is a dual path 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This device is perfectly suited as general purpose driver in the frequency range from 2100 MHz to 2200 MHz. Available in gull wing or flat lead outline.

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  • BLM9D3438-16AM

    The BLM9D3438-16AM is a 3-stage 16 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 3400 MHz to 3800 MHz. Available in LGA outline.

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  • BLM9D3740-16AM

    The BLM9D3740-16AM is a 3-stage 16 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 3700 MHz to 4000 MHz. Available in LGA outline.

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  • BLM9D3336-14AM

    The BLM9D3336-14AM is a 3-stage 14 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 3300 MHz to 3650 MHz. Available in LGA outline.

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  • BLM9D3842-16AM

    The BLM9D3842-16AM is a 3-stage 16 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 3800 MHz to 4200 MHz. Available in LGA outline.

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  • BLM9D3437-12AM

    This product has been discontinued. Click here for discontinuation information.
    The replacement is: BLM9D3438-16AM

    The BLM9D3437-12AM is a 3-stage 12 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 3400 MHz to 3700 MHz. Available in LGA outline.

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  • BLM8AD22S-60ABG

    This product has been discontinued. Click here for discontinuation information.
    The replacement is: B11G1822N60D

    The BLM8AD22S-60ABG is a dual section solution using Ampleon’s state of the art GEN8 LDMOS technology. It includes a 45 W 2-stage fully integrated Doherty MMIC in section A, and a 15 W, 2-stage MMIC in section B, allowing a 3-way 1:2:1 Doherty when both sections are externally combined. The carrier and peaking devices, input splitter and output combiner, of the 2-stage fully integrated Doherty MMIC of section A are integrated in package. This device is perfectly suited as final stage in massive MIMO or small cell applications in the frequency range from 2100 MHz to 2200 MHz. Available in gull wing.

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  • BLM10D3740-35AB

    The BLM10D3740-35AB is a 3-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as a final stage for small cells and massive MIMO applications in the frequency range from 3700 MHz to 4000 MHz. Available in PQFN outline.

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  • BLM10D2327-40AB

    The BLM10D2327-40AB is a 2-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as a final stage for small cells and massive MIMO applications in the frequency range from 2500 MHz to 2700 MHz. Available in PQFN outline.

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  • BLM10D1822-60ABG

    The BLM10D1822-60ABG is a 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or mMIMO final in the frequency range from 1800 MHz to 2200 MHz. Available in gull wing.

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  • BLM10D2327-60ABG

    The BLM10D2327-60ABG is a 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS MMIC technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This device is perfectly suited as general purpose driver or mMIMO final in the frequency range from 2300 MHz to 2700 MHz. Available in gull wing.

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  • BLM8D1822S-50PB

    The BLM8D1822S-50PB(G) is a dual section, 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN8 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or flat lead outline.

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  • BLM8G0710S-15PB

    The BLM8G0710S-15PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz. Available in gull wing or straight lead outline.

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  • BLM10D1822-61ABG

    The BLM10D1822-61ABG is a 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver in the frequency range from 1800 MHz to 2200 MHz. Available in gull wing.

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  • BLM9H0610S-60PG

    The BLM9H0610S-60PG is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN9 HV LDMMIC technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 600 MHz to 1000 MHz. Available in gull wing outline.

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  • BLM8G0710S-45ABG

    This product has been discontinued. Click here for discontinuation information.

    The BLM8G0710S-45AB(G) is a dual section, asymmetric, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as small cell final stage in Doherty configuration, or as general purpose driver in the 700 MHz to 1000 MHz frequency range. Available in gull wing or straight lead outline.

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  • BLM8G0710S-60PB

    This product has been discontinued. Click here for discontinuation information.

    The BLM8G0710S-60PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz. Available in gull wing or straight lead outline.

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  • BLM7G1822S-40AB

    This product has been discontinued. Click here for discontinuation information.

    The BLM7G1822S-40AB(G) is a dual section, asymmetric, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as small cell final in Doherty configuration, or as general purpose driver in the 1805 MHz to 2170 MHz frequency range. Available in gull wing or straight lead outline.

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  • BLM7G1822S-40ABG

    This product has been discontinued. Click here for discontinuation information.

    The BLM7G1822S-40AB(G) is a dual section, asymmetric, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as small cell final in Doherty configuration, or as general purpose driver in the 1805 MHz to 2170 MHz frequency range. Available in gull wing or straight lead outline.

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  • BLM8G0710S-45AB

    This product has been discontinued. Click here for discontinuation information.

    The BLM8G0710S-45AB(G) is a dual section, asymmetric, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as small cell final stage in Doherty configuration, or as general purpose driver in the 700 MHz to 1000 MHz frequency range. Available in gull wing or straight lead outline.

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  • BLM7G1822S-80AB

    This product has been discontinued. Click here for discontinuation information.
    The replacement is: BLM9D1822S-60PBG

    The BLM7G1822S-80AB(G) is a dual section, asymmetric, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as small cell final stage in Doherty configuration, or as general purpose driver in the 1805 MHz to 2170 MHz frequency range. Available in gull wing or straight lead outline.

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  • BLM7G1822S-20PB

    This product has been discontinued. Click here for discontinuation information.
    The replacement is: BLM7G1822S-40PB

    The BLM7G1822S-20PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or straight lead outline.

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  • BLM7G1822S-80ABG

    This product has been discontinued. Click here for discontinuation information.
    The replacement is: BLM9D1822S-60PBG

    The BLM7G1822S-80AB(G) is a dual section, asymmetric, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as small cell final stage in Doherty configuration, or as general purpose driver in the 1805 MHz to 2170 MHz frequency range. Available in gull wing or straight lead outline.

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  • BLM9D2327S-50PB

    The BLM9D2327S-50PB(G) is a dual section, 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN9 LDMOS technology. For each section, the carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 2300 MHz to 2700 MHz. Available in gull wing or flat lead outline.

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  • BLM7G1822S-80PB

    This product has been discontinued. Click here for discontinuation information.

    The BLM7G1822S-80PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or straight lead outline.

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  • BLM7G1822S-40PB

    The BLM7G1822S-40PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or straight lead outline.

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  • BLM10D3438-35AB

    The BLM10D3438-35AB is a 3-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as a final stage for small cells and massive MIMO applications in the frequency range from 3400 MHz to 3800 MHz. Available in PQFN outline.

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  • BLM10D3438-70ABG

    This product has been discontinued. Click here for discontinuation information.
    The replacement is: B11G3338N81D

    The BLM10D3438-70ABG is a 3-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or mMIMO final in the frequency range from 3400 MHz to 3800 MHz. Available in gull wing.

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  • BLM8G0710S-30PB

    This product has been discontinued. Click here for discontinuation information.
    The replacement is: B10H0710N40D

    The BLM8G0710S-30PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz. Available in gull wing or straight lead outline.

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  • BLM8D1822S-50PBG

    The BLM8D1822S-50PB(G) is a dual section, 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN8 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or flat lead outline.

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  • BLM7G1822S-40PBG

    The BLM7G1822S-40PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or straight lead outline.

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  • BLM8G0710S-15PBG

    The BLM8G0710S-15PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz. Available in gull wing or straight lead outline.

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  • BLM9D1822S-60PBG

    The BLM9D1822S-60PBG is a dual section, 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. For each section, the carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1800 MHz to 2200 MHz. Available in gull wing outline.

    Learn more

  • BLM8G0710S-60PBG

    This product has been discontinued. Click here for discontinuation information.

    The BLM8G0710S-60PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz. Available in gull wing or straight lead outline.

    Learn more

  • BLM7G1822S-20PBG

    This product has been discontinued. Click here for discontinuation information.
    The replacement is: BLM7G1822S-40PBG

    The BLM7G1822S-20PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or straight lead outline.

    Learn more

  • BLM9D2327S-50PBG

    The BLM9D2327S-50PB(G) is a dual section, 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN9 LDMOS technology. For each section, the carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 2300 MHz to 2700 MHz. Available in gull wing or flat lead outline.

    Learn more

  • BLM8G0710S-30PBG

    The BLM8G0710S-30PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz. Available in gull wing or straight lead outline.

    Learn more

  • BLM7G1822S-80PBG

    The BLM7G1822S-80PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or straight lead outline.

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590 documents found for "ART"

  • ART700FH(S) SPICE Model (Simulation model)

    ART700FH(S) SPICE Model

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  • ART150PE 65V 20mA S-parameter Data (S-parameter)

    ART150PE 65V 20mA S-parameter Data

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  • ART2K0FE SPICE Model (Simulation model)

    ART2K0FE SPICE Model

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • ART2K0FE(S)(G) Cauer Thermal Transient Impedance Model (Simulation model)

    ART2K0FE(S)(G) Cauer Thermal Transient Impedance Model

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  • ART700FH(S) 65V 50mA S-parameter Data (S-parameter)

    ART700FH(S) 65V 50mA S-parameter Data

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  • ART2K0FE(S)(G) Foster Thermal Transient Impedance Model (Simulation model)

    ART2K0FE(S)(G) Foster Thermal Transient Impedance Model

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  • ART1K6FH(S) 50V 100mA S-parameter Data (S-parameter)

    ART1K6FH(S) 50V 100mA S-parameter Data

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  • ART2K0FE(S) 65V 100mA S-parameter Data (S-parameter)

    ART2K0FE(S) 65V 100mA S-parameter Data

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  • ART1K6FH(S) SPICE Model (Simulation model)

    ART1K6FH(S) SPICE Model

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • ART1K6PH 50V 100mA S-parameter Data (S-parameter)

    ART1K6PH 50V 100mA S-parameter Data

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  • ART150FE 65V 300mA S-parameter Data (S-parameter)

    ART150FE 65V 300mA S-parameter Data

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • ART2K0TFES 65V 100mA S-parameter Data (S-parameter)

    ART2K0TFES 65V 100mA S-parameter Data

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  • ART450FE Foster Thermal Transient Impedance Model (Simulation model)

    ART450FE Foster Thermal Transient Impedance Model

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  • ART450FE 65V 25mA S-parameter Data (S-parameter)

    ART450FE 65V 25mA S-parameter Data

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  • ART450FE Cauer Thermal Transient Impedance Model (Simulation model)

    ART450FE Cauer Thermal Transient Impedance Model

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  • ART2K0TFES(G) Foster Thermal Transient Impedance Model (Simulation model)

    ART2K0TFES(G) Foster Thermal Transient Impedance Model

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  • ART2K0TFES SPICE Model (Simulation model)

    ART2K0TFES SPICE Model

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  • ART2K0TFES(G) Cauer Thermal Transient Impedance Model (Simulation model)

    ART2K0TFES(G) Cauer Thermal Transient Impedance Model

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  • ART450FE SPICE Model (Simulation model)

    ART450FE SPICE Model

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  • ART150FE SPICE Model (Simulation model)

    ART150FE SPICE Model

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  • ART2K0PE(G) Cauer Thermal Transient Impedance Model (Simulation model)

    ART2K0PE(G) Cauer Thermal Transient Impedance Model

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • ART2K0PE 65V 100mA S-parameter Data (S-parameter)

    ART2K0PE 65V 100mA S-parameter Data

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  • ART2K0PE(G) Foster Thermal Transient Impedance Model (Simulation model)

    ART2K0PE(G) Foster Thermal Transient Impedance Model

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  • ART800PE(G) Foster Thermal Transient Impedance Model (Simulation model)

    ART800PE(G) Foster Thermal Transient Impedance Model

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  • ART800PE SPICE Model (Simulation model)

    ART800PE SPICE Model

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  • ART800PE(G) Cauer Thermal Transient Impedance Model (Simulation model)

    ART800PE(G) Cauer Thermal Transient Impedance Model

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • ART800PE 65V 50mA S-parameter Data (S-parameter)

    ART800PE 65V 50mA S-parameter Data

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • ART2K5TPU Foster Thermal Transient Impedance Model (Simulation model)

    ART2K5TPU Foster Thermal Transient Impedance Model

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  • ART2K5TPU Cauer Thermal Transient Impedance Model (Simulation model)

    ART2K5TPU Cauer Thermal Transient Impedance Model

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  • ART2K0PE SPICE Model (Simulation model)

    ART2K0PE SPICE Model

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • ART2K5TPU 75V 100mA S-parameter Data (S-parameter)

    ART2K5TPU 75V 100mA S-parameter Data

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  • ART1K9FH SPICE Model (Simulation model)

    ART1K9FH SPICE Model

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  • ART2K5TFUS(G) Foster Thermal Transient Impedance Model (Simulation model)

    ART2K5TFUS(G) Foster Thermal Transient Impedance Model

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • ART1K9FH Foster Thermal Transient Impedance Model (Simulation model)

    ART1K9FH Foster Thermal Transient Impedance Model

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  • ART1K9FH Cauer Thermal Transient Impedance Model (Simulation model)

    ART1K9FH Cauer Thermal Transient Impedance Model

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  • ART1K9FH 55V 125mA S-parameter Data (S-parameter)

    ART1K9FH 55V 125mA S-parameter Data

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  • ART2K5TFUS(G) Cauer Thermal Transient Impedance Model (Simulation model)

    ART2K5TFUS(G) Cauer Thermal Transient Impedance Model

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  • ART2K5TPU SPICE Model (Simulation model)

    ART2K5TPU SPICE Model

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  • ART2K5TFUS SPICE Model (Simulation model)

    ART2K5TFUS SPICE Model

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  • ART2K5TFUS 75V 100mA S-parameter Data (Simulation model)

    ART2K5TFUS 75V 100mA S-parameter Data

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Air cavity plastic earless flanged package; 8 leads (Outline drawing)

    Air cavity plastic earless flanged package; 8 leads

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  • Plastic, heatsink small outline package; 16 leads (Outline drawing)

    Plastic, heatsink small outline package; 16 leads

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Ampleon Plug-and-play evaluation tools for RF energy (Leaflet)

    Ampleon Plug-and-play evaluation tools for RF energy

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  • Air cavity plastic earless flanged package; 4 leads (Outline drawing)

    Air cavity plastic earless flanged package; 4 leads

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • UHF power LDMOS transistor (Data sheet)

    UHF power LDMOS transistor

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  • LDMOS L-band radar power transistor (Data sheet)

    LDMOS L-band radar power transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • LDMOS 2-stage integrated Doherty MMIC (Data sheet)

    LDMOS 2-stage integrated Doherty MMIC

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  • Efficiency Improvement of LDMOS Transistors for Base Stations: Towards the Theoretical Limit (Other type)

    Efficiency Improvement of LDMOS Transistors for Base Stations: Towards the Theoretical Limit

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Signal generator for RF energy solutions (Data sheet)

    Signal generator for RF energy solutions

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  • Plastic, heatsink small outline package; 4 leads (Outline drawing)

    Plastic, heatsink small outline package; 4 leads

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  • LDMOS S-band radar power module (Data sheet)

    LDMOS S-band radar power module

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • LDMOS Ruggedness Reliability (Other type)

    LDMOS Ruggedness Reliability

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Plastic, heatsink small outline package; 4 leads (flat) (Outline drawing)

    Plastic, heatsink small outline package; 4 leads (flat)

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • LDMOS 2-stage integrated Doherty MMIC (Data sheet)

    LDMOS 2-stage integrated Doherty MMIC

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  • LDMOS 2-stage power MMIC (Data sheet)

    LDMOS 2-stage power MMIC

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Ampleon RF Solid State Cooking Whitepaper (White paper)

    Ampleon RF Solid State Cooking Whitepaper

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Plastic, heatsink small outline package; 4 leads (Outline drawing)

    Plastic, heatsink small outline package; 4 leads

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Biasing Asymmetrical Doherty RF Power Transistor (Other type)

    Biasing Asymmetrical Doherty RF Power Transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • HVQFN28: plastic thermal enhanced very thin quad flat package; no leads; 28 terminals; body 5 x 5 x 0.85 mm (Outline drawing)

    HVQFN28: plastic thermal enhanced very thin quad flat package; no leads; 28 terminals; body 5 x 5 x 0.85 mm

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • LDMOS S-band radar power transistor (Data sheet)

    LDMOS S-band radar power transistor

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  • LDMOS S-band radar power transistor (Data sheet)

    LDMOS S-band radar power transistor

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  • Footprint for reflow soldering SOT1352-1 (Reflow soldering)

    Footprint for reflow soldering SOT1352-1

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  • LDMOS avionics power transistor (Data sheet)

    LDMOS avionics power transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • S-band Radar LDMOS Transistors (Other type)

    S-band Radar LDMOS Transistors

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • LDMOS S-band radar power transistor (Data sheet)

    LDMOS S-band radar power transistor

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  • LDMOS 2-stage power MMIC (Data sheet)

    LDMOS 2-stage power MMIC

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Microwave power transistor (Data sheet)

    Microwave power transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • LDMOS avionics power transistor (Data sheet)

    LDMOS avionics power transistor

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  • LDMOS S-band radar power transistor (Data sheet)

    LDMOS S-band radar power transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • LDMOS 2-stage integrated Doherty MMIC (Data sheet)

    LDMOS 2-stage integrated Doherty MMIC

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  • Footprint for reflow soldering SOT834-1 (Reflow soldering)

    Footprint for reflow soldering SOT834-1

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Broadband RF power GaN HEMT (Data sheet)

    Broadband RF power GaN HEMT

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  • HF / VHF power LDMOS transistor (Data sheet)

    HF / VHF power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • HF power MOS transistor (Data sheet)

    HF power MOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Overmolded plastic earless flanged package; 4 leads (Outline drawing)

    Overmolded plastic earless flanged package; 4 leads

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • LDMOS 2-stage integrated Doherty MMIC (Data sheet)

    LDMOS 2-stage integrated Doherty MMIC

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • LDMOS 2-stage integrated Doherty MMIC (Data sheet)

    LDMOS 2-stage integrated Doherty MMIC

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  • Plastic, heatsink small outline package; 16 leads(flat) (Outline drawing)

    Plastic, heatsink small outline package; 16 leads(flat)

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  • LDMOS 2-stage integrated Doherty MMIC (Data sheet)

    LDMOS 2-stage integrated Doherty MMIC

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Manual Efficiency Bandwidth Calculators Manual (Design support)

    Manual Efficiency Bandwidth Calculators Manual

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Earless flanged ceramic package; 2 leads (Outline drawing)

    Earless flanged ceramic package; 2 leads

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  • LDMOS S-band radar power transistor (Data sheet)

    LDMOS S-band radar power transistor

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  • LDMOS 3-stage integrated Doherty MMIC (Data sheet)

    LDMOS 3-stage integrated Doherty MMIC

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • LDMOS 2-stage power MMIC (Data sheet)

    LDMOS 2-stage power MMIC

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  • Air cavity plastic earless flanged package; 8 leads (Outline drawing)

    Air cavity plastic earless flanged package; 8 leads

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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    Power LDMOS transistor

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    Broadband RF power GaN HEMT

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    High Voltage RF LDMOS Technology for Broadcast Applications

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    Power LDMOS transistor

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  • Plastic, heatsink small outline package; 4 leads (flat) (Outline drawing)

    Plastic, heatsink small outline package; 4 leads (flat)

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    Broadband RF power GaN HEMT

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    LDMOS S-band radar power transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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    Power LDMOS transistor

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    Power LDMOS transistor

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    UHF power LDMOS transistor

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    Power LDMOS transistor

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    LDMOS 2-stage integrated Doherty MMIC

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    Broadband RF power GaN HEMT

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  • Air cavity plastic earless flanged package; 6 leads (Outline drawing)

    Air cavity plastic earless flanged package; 6 leads

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    Plastic; heatsink small outline package; 2 leads

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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    Power LDMOS transistor

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    UHF power LDMOS transistor

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    Power LDMOS transistor

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  • Plastic earless flanged cavity package; 4 leads (Outline drawing)

    Plastic earless flanged cavity package; 4 leads

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  • Plastic, heatsink small outline package; 8 leads (Outline drawing)

    Plastic, heatsink small outline package; 8 leads

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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    Power LDMOS transistor

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    LDMOS S-band radar power module

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    LDMOS 2-stage integrated Doherty MMIC

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS module (Data sheet)

    Power LDMOS module

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Air cavity plastic earless flanged package; 8 leads (Outline drawing)

    Air cavity plastic earless flanged package; 8 leads

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    Broadband RF power GaN HEMT

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Microwave power transistor (Data sheet)

    Microwave power transistor

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  • Plastic earless flanged cavity package; 4 leads (Outline drawing)

    Plastic earless flanged cavity package; 4 leads

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Plastic, heatsink small outline package; 16 leads (flat) (Outline drawing)

    Plastic, heatsink small outline package; 16 leads (flat)

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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    RF Driven Plasma Lighting: the Next Revolution in Light Sources

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    Power LDMOS transistor

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    Power LDMOS transistor

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    LDMOS 2-stage power MMIC

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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    LDMOS 2-stage power MMIC

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    Power LDMOS transistor

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    LDMOS 2-stage power MMIC

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  • Air cavity plastic earless flanged package; 6 leads (Outline drawing)

    Air cavity plastic earless flanged package; 6 leads

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  • LDMOS 3-stage integrated Doherty MMIC (Data sheet)

    LDMOS 3-stage integrated Doherty MMIC

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    LDMOS 2-stage integrated Doherty MMIC

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  • LDMOS 2-stage integrated Doherty MMIC (Data sheet)

    LDMOS 2-stage integrated Doherty MMIC

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  • LDMOS 2-stage integrated Doherty MMIC (Data sheet)

    LDMOS 2-stage integrated Doherty MMIC

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  • Plastic thermal enhanced package; no leads; 20 terminals; body 7.0 x 7.0 x 0.98 mm (Outline drawing)

    Plastic thermal enhanced package; no leads; 20 terminals; body 7.0 x 7.0 x 0.98 mm

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    Plastic thermal enhanced package; no leads; 20 terminals; body 7.0 x 7.0 x 0.98 mm

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    LDMOS 2-stage integrated Doherty MMIC

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    ART1K6PH Model for ADS (Keysight Advanced Design System)

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    LDMOS 2-stage integrated Doherty MMIC

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    LDMOS 3-stage integrated Doherty MMIC

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  • Air cavity plastic earless flanged package; 6 leads (Outline drawing)

    Air cavity plastic earless flanged package; 6 leads

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    Plastic, heatsink small outline package; 8 leads

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  • Flanged balanced ceramic package; 2 mounting holes; 4 leads (Outline drawing)

    Flanged balanced ceramic package; 2 mounting holes; 4 leads

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  • EuMW2020 Student Design Competition Thrust 2 (MarCom)

    EuMW2020 Student Design Competition Thrust 2

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    Printed-Circuit Board (PCB) ART150FE (Data sheet)

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    Printed-Circuit Board (PCB) ART35FE (Data sheet)

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    ART150FE Model for ADS (Keysight Advanced Design System)

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    ART35FE Model for ADS (Keysight Advanced Design System)

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Overmolded plastic earless flanged package; 6 leads (Outline drawing)

    Overmolded plastic earless flanged package; 6 leads

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  • LDMOS 3-stage integrated Doherty MMIC (Data sheet)

    LDMOS 3-stage integrated Doherty MMIC

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    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS module (Data sheet)

    Power LDMOS module

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • UHF power LDMOS transistor (Data sheet)

    UHF power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Plastic earless flanged cavity package; 4 leads (Outline drawing)

    Plastic earless flanged cavity package; 4 leads

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • LDMOS 2-stage integrated Doherty MMIC (Data sheet)

    LDMOS 2-stage integrated Doherty MMIC

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • LDMOS 2-stage power MMIC (Data sheet)

    LDMOS 2-stage power MMIC

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Air cavity plastic earless flanged package; 6 leads (Outline drawing)

    Air cavity plastic earless flanged package; 6 leads

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  • EuMW2019 Student Design Competition Thrust 2 (MarCom)

    EuMW2019 Student Design Competition Thrust 2

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • PQFN20: plastic thermal enhanced quad flat package; no leads; 20 terminals; body 8.0 x 8.0 x 2.1 mm (Outline drawing)

    PQFN20: plastic thermal enhanced quad flat package; no leads; 20 terminals; body 8.0 x 8.0 x 2.1 mm

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  • Broadband RF power GaN HEMT (Data sheet)

    Broadband RF power GaN HEMT

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • LDMOS Technology for RF Power Amplifiers (Other type)

    LDMOS Technology for RF Power Amplifiers

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Plastic, heatsink small outline package; 4 leads (flat) (Outline drawing)

    Plastic, heatsink small outline package; 4 leads (flat)

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Footprint for reflow soldering SOT1179-2 (Reflow soldering)

    Footprint for reflow soldering SOT1179-2

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • UHF power LDMOS transistor (Data sheet)

    UHF power LDMOS transistor

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  • LDMOS L-band radar power transistor (Data sheet)

    LDMOS L-band radar power transistor

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  • Air cavity plastic earless flanged package; 2 leads (Outline drawing)

    Air cavity plastic earless flanged package; 2 leads

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  • Footprint for reflow soldering SOT822-1 (Reflow soldering)

    Footprint for reflow soldering SOT822-1

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  • Footprint information for reflow soldering of SOT1371-1 package (Reflow soldering)

    Footprint information for reflow soldering of SOT1371-1 package

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  • Plastic, heatsink small outline package; 4 leads (flat) (Outline drawing)

    Plastic, heatsink small outline package; 4 leads (flat)

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  • LDMOS 433 MHz power module (Data sheet)

    LDMOS 433 MHz power module

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  • Air cavity plastic earless flanged package; 6 leads (Outline drawing)

    Air cavity plastic earless flanged package; 6 leads

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Ampleon netherlands how to reach us (MarCom)

    Ampleon netherlands how to reach us

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  • Air cavity plastic earless flanged package; 6 leads (Outline drawing)

    Air cavity plastic earless flanged package; 6 leads

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • HF/VHF power transistor (Data sheet)

    HF/VHF power transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • LDMOS 2-stage integrated Doherty MMIC (Data sheet)

    LDMOS 2-stage integrated Doherty MMIC

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS module (Data sheet)

    Power LDMOS module

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  • Plastic; heatsink small outline package; 2 leads (flat) (Outline drawing)

    Plastic; heatsink small outline package; 2 leads (flat)

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  • LDMOS 2-stage integrated Doherty MMIC (Data sheet)

    LDMOS 2-stage integrated Doherty MMIC

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  • Air cavity plastic earless flanged package; 6 leads (Outline drawing)

    Air cavity plastic earless flanged package; 6 leads

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  • HF/VHF power MOS transistor (Data sheet)

    HF/VHF power MOS transistor

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  • LDMOS S-band radar power transistor (Data sheet)

    LDMOS S-band radar power transistor

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  • Overmolded plastic earless flanged package; 4 leads (Outline drawing)

    Overmolded plastic earless flanged package; 4 leads

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  • BLP8G27-5 Model for ADS (Keysight Advanced Design System) (Simulation model)

    BLP8G27-5 Model for ADS (Keysight Advanced Design System)

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  • BLF989E(S) Model for ADS (Keysight Advanced Design System) (Simulation model)

    BLF989E(S) Model for ADS (Keysight Advanced Design System)

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  • BLC2425M10LS250 Model for ADS (Keysight Advanced Design System) (Simulation model)

    BLC2425M10LS250 Model for ADS (Keysight Advanced Design System)

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  • BLC10G18XS-552AVT Model for ADS (Keysight Advanced Design System) (Simulation model)

    BLC10G18XS-552AVT Model for ADS (Keysight Advanced Design System)

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  • ART150PEG Simulation Example for Cadence AWR Microwave Office® (Simulation model)

    ART150PEG Simulation Example for Cadence AWR Microwave Office®

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  • ART150PE Simulation Example for Cadence AWR Microwave Office® (Simulation model)

    ART150PE Simulation Example for Cadence AWR Microwave Office®

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  • ART150PEG Model for Cadence AWR Microwave Office® (Simulation model)

    ART150PEG Model for Cadence AWR Microwave Office®

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  • ART150PE Model for Cadence AWR Microwave Office® (Simulation model)

    ART150PE Model for Cadence AWR Microwave Office®

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  • BLC10G22XS-551AVT Model for ADS (Keysight Advanced Design System) (Simulation model)

    BLC10G22XS-551AVT Model for ADS (Keysight Advanced Design System)

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  • BLC10G22XS-600AVT Model for ADS (Keysight Advanced Design System) (Simulation model)

    BLC10G22XS-600AVT Model for ADS (Keysight Advanced Design System)

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  • BLF989(S) Model for ADS (Keysight Advanced Design System) (Simulation model)

    BLF989(S) Model for ADS (Keysight Advanced Design System)

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  • BLC10G18XS-551AVT Model for ADS (Keysight Advanced Design System) (Simulation model)

    BLC10G18XS-551AVT Model for ADS (Keysight Advanced Design System)

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  • BLF0910H9LS600 Model for ADS (Keysight Advanced Design System) (Simulation model)

    BLF0910H9LS600 Model for ADS (Keysight Advanced Design System)

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  • BLF984P(S) Model for ADS (Keysight Advanced Design System) (Simulation model)

    BLF984P(S) Model for ADS (Keysight Advanced Design System)

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  • BLC9G27LS-151AV Model for ADS (Keysight Advanced Design System) (Simulation model)

    BLC9G27LS-151AV Model for ADS (Keysight Advanced Design System)

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  • BLF647P(S) Model for ADS (Keysight Advanced Design System) (Simulation model)

    BLF647P(S) Model for ADS (Keysight Advanced Design System)

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  • Thermal characteristics of ART LDMOS power transistors (Application note)

    Thermal characteristics of ART LDMOS power transistors

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  • Earless flanged ceramic package; 6 leads (Outline drawing)

    Earless flanged ceramic package; 6 leads

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  • ART700FHG Model for ADS (Keysight Advanced Design System) (Simulation model)

    ART700FHG Model for ADS (Keysight Advanced Design System)

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  • ART2K0FE(S) Model for ADS (Keysight Advanced Design System) (Simulation model)

    ART2K0FE(S) Model for ADS (Keysight Advanced Design System)

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  • ART1K6FHG Model for ADS (Keysight Advanced Design System) (Simulation model)

    ART1K6FHG Model for ADS (Keysight Advanced Design System)

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  • ART2K0FEG Model for ADS (Keysight Advanced Design System) (Simulation model)

    ART2K0FEG Model for ADS (Keysight Advanced Design System)

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  • ART150PE Model for ADS (Keysight Advanced Design System) (Simulation model)

    ART150PE Model for ADS (Keysight Advanced Design System)

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  • ART150PEG Model for ADS (Keysight Advanced Design System) (Simulation model)

    ART150PEG Model for ADS (Keysight Advanced Design System)

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  • ART1K6FH(S) Model for ADS (Keysight Advanced Design System) (Simulation model)

    ART1K6FH(S) Model for ADS (Keysight Advanced Design System)

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Printed-Circuit Board (PCB) BLF989(S) (Data sheet) (Design support)

    Printed-Circuit Board (PCB) BLF989(S) (Data sheet)

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  • HVSON16; Reel dry pack, SMD, 7"Q1/T1 standard product orientationOrderable part number ending ,515 or ZOrdering code (12NC) ending 515 (Packing)

    HVSON16; Reel dry pack, SMD, 7"Q1/T1 standard product orientationOrderable part number ending ,515 or ZOrdering code (12NC) ending 515

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  • VHF power MOS transistor (Data sheet)

    VHF power MOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • LDMOS 2-stage power MMIC (Data sheet)

    LDMOS 2-stage power MMIC

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS module (Data sheet)

    Power LDMOS module

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Air cavity plastic earless flanged package; 4 leadsReel dry pack, SMD, 13"Q2/T3 standard product orientationOrderable part number ending ,518 or YOrdering code (12NC) ending 518 (Packing)

    Air cavity plastic earless flanged package; 4 leadsReel dry pack, SMD, 13"Q2/T3 standard product orientationOrderable part number ending ,518 or YOrdering code (12NC) ending 518

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  • Air cavity plastic earless flanged package; 8 leadsReel dry pack, SMD, 13"Q4/T2 standard product orientationOrderable part number ending ,518 or YOrdering code (12NC) ending 518 (Packing)

    Air cavity plastic earless flanged package; 8 leadsReel dry pack, SMD, 13"Q4/T2 standard product orientationOrderable part number ending ,518 or YOrdering code (12NC) ending 518

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  • Plastic, heatsink small outline package; 16 leads (Outline drawing)

    Plastic, heatsink small outline package; 16 leads

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  • Measurement results of a Class-AB design for the 3000 to 3100 MHz band with BLS9G2934LS-400 (Report)

    Measurement results of a Class-AB design for the 3000 to 3100 MHz band with BLS9G2934LS-400

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  • Measurement results of the demo design with BLF974P optimized for 230-236 MHz (Report)

    Measurement results of the demo design with BLF974P optimized for 230-236 MHz

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  • Measurement results of a Symmetric Ultra Wideband Doherty design with ART2K0FE for 170 to 240 MHz (Report)

    Measurement results of a Symmetric Ultra Wideband Doherty design with ART2K0FE for 170 to 240 MHz

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  • Measurement results of a Class-AB design for the 410 to 460 MHz band with BLU9H0408L-800P (Report)

    Measurement results of a Class-AB design for the 410 to 460 MHz band with BLU9H0408L-800P

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  • Measurement results of BLP15H9S100 in Board #AR1924 tuned for the 360-450 MHz band at 50 V (Report)

    Measurement results of BLP15H9S100 in Board #AR1924 tuned for the 360-450 MHz band at 50 V

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  • Measurement results of BLP15M9S100 in Board #AR202140 tested over 400-470 MHz at 28 V (Report)

    Measurement results of BLP15M9S100 in Board #AR202140 tested over 400-470 MHz at 28 V

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  • Measurement results of ART2K0FE in Board #AR192069 tested over 123-133 MHz at 50-62 V (Report)

    Measurement results of ART2K0FE in Board #AR192069 tested over 123-133 MHz at 50-62 V

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  • Measurement results of BLP15M9S30 in Board #AR192035 tuned for the 30-520 MHz band at 28-32 V (Report)

    Measurement results of BLP15M9S30 in Board #AR192035 tuned for the 30-520 MHz band at 28-32 V

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  • Measurement results of a wideband demoboard design with ART35FE in the 60-130 MHz band (Report)

    Measurement results of a wideband demoboard design with ART35FE in the 60-130 MHz band

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  • Measurement results of a Class-AB design for the 3100 to 3500 MHz band with BLS9G2735LS-50 (Report)

    Measurement results of a Class-AB design for the 3100 to 3500 MHz band with BLS9G2735LS-50

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  • Measurement results of a 1500 W 352 MHz CW power amplifier with ART2K0FE and PCB integrated coplanar baluns (Report)

    Measurement results of a 1500 W 352 MHz CW power amplifier with ART2K0FE and PCB integrated coplanar baluns

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  • Measurement results of a class-AB design for BLF978P in a demo optimized for 500 MHz (Report)

    Measurement results of a class-AB design for BLF978P in a demo optimized for 500 MHz

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  • Measurement results of a Class-AB design with BLF978P in a demo optimized for 644-650 MHz (Report)

    Measurement results of a Class-AB design with BLF978P in a demo optimized for 644-650 MHz

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  • Measurement results of a Class-AB design for the 1700-1850 MHz band with BLP15H9S100 (Report)

    Measurement results of a Class-AB design for the 1700-1850 MHz band with BLP15H9S100

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  • Measurement results of a Class-AB design for the 88-108 MHz band with ART2K0FE (Report)

    Measurement results of a Class-AB design for the 88-108 MHz band with ART2K0FE

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  • Measurement results of a Class-AB design for the 88-108 MHz band with ART1K6FH (Report)

    Measurement results of a Class-AB design for the 88-108 MHz band with ART1K6FH

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  • Measurement results of a Class-AB design for the 740-800 MHz band with BLP9LA25SG (Report)

    Measurement results of a Class-AB design for the 740-800 MHz band with BLP9LA25SG

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  • Measurement results of a Class-AB design for the 768-870 MHz band with BLP15H9S10 (Report)

    Measurement results of a Class-AB design for the 768-870 MHz band with BLP15H9S10

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  • Measurement results of a Class-AB design for the 380-450 MHz band with BLP5LA55S (Report)

    Measurement results of a Class-AB design for the 380-450 MHz band with BLP5LA55S

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  • Measurement results of a Class-AB broadband design for the 474-714 MHz.band with BLF989 (Report)

    Measurement results of a Class-AB broadband design for the 474-714 MHz.band with BLF989

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  • Measurement results of ART2K0FE in Board #AR212091 tested over 270-310 MHz at 62 V (Report)

    Measurement results of ART2K0FE in Board #AR212091 tested over 270-310 MHz at 62 V

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  • Measurement results of ART150FE in Board #AR202075 tuned for 100-140 MHz at 62 V (Report)

    Measurement results of ART150FE in Board #AR202075 tuned for 100-140 MHz at 62 V

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  • Measurement results of BLP15H9S30 in Board #AR192182 tuned for 360-450 MHz at 50 V (Report)

    Measurement results of BLP15H9S30 in Board #AR192182 tuned for 360-450 MHz at 50 V

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  • Measurement results of BLF984P in Board #AR192177 tuned for the 30-520 MHz band at 28 V (Report)

    Measurement results of BLF984P in Board #AR192177 tuned for the 30-520 MHz band at 28 V

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  • Measurement results of BLP15H9S30G in Board #AR212046 tested over 1200-1400 MHz at 40-50 V (Report)

    Measurement results of BLP15H9S30G in Board #AR212046 tested over 1200-1400 MHz at 40-50 V

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  • Measurement results of BLP15H9S10G in Board #AR222005 tuned for 2-30 MHz band at 50 V (Report)

    Measurement results of BLP15H9S10G in Board #AR222005 tuned for 2-30 MHz band at 50 V

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  • Measurement results of BLF647P in Board #AR212016 tuned for 30-520 MHz band at 28 V (Report)

    Measurement results of BLF647P in Board #AR212016 tuned for 30-520 MHz band at 28 V

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  • Measurement results of linear demo with ART1K6 at 2-30 MHz (Report)

    Measurement results of linear demo with ART1K6 at 2-30 MHz

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  • Measurement results of BLP15H9S30 in Board #AR212058 tested over the 30-600 MHz band at 35-50 V (Report)

    Measurement results of BLP15H9S30 in Board #AR212058 tested over the 30-600 MHz band at 35-50 V

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  • Measurement results of a Class-AB design for the 1200 to 1400 MHz band with CLL3H0914L(S)-700 (Report)

    Measurement results of a Class-AB design for the 1200 to 1400 MHz band with CLL3H0914L(S)-700

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  • Measurement results of ART1K6FH in Board #AR212082 tuned for 2-30 MHz band at 50 V (Report)

    Measurement results of ART1K6FH in Board #AR212082 tuned for 2-30 MHz band at 50 V

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  • Measurement results of a Class-AB design for the 30-512 MHz band with BLF974P (Report)

    Measurement results of a Class-AB design for the 30-512 MHz band with BLF974P

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  • Measurement results of BLP15H9S100 at 50V over the 30-900 MHz band (Report)

    Measurement results of BLP15H9S100 at 50V over the 30-900 MHz band

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  • Measurement results of a Class-AB design for the 750-950 MHz band with BLP15H9S30 (Report)

    Measurement results of a Class-AB design for the 750-950 MHz band with BLP15H9S30

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  • Measurement results of BLP15H9S30 measured at 50 V over 30-1000 MHz (Report)

    Measurement results of BLP15H9S30 measured at 50 V over 30-1000 MHz

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  • Measurement results of BLP15H9S10 in Board #AR192151 tested over 380-450 MHz at 24-32 V (Report)

    Measurement results of BLP15H9S10 in Board #AR192151 tested over 380-450 MHz at 24-32 V

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  • Measurement results of a Class-E Amplifier design for 2 MHz with ART2K0FE (Report)

    Measurement results of a Class-E Amplifier design for 2 MHz with ART2K0FE

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  • Measurement results of a Class-AB amplifier design for the 13-41 MHz band with ART2K0FE (Report)

    Measurement results of a Class-AB amplifier design for the 13-41 MHz band with ART2K0FE

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  • Measurement results of a Class-AB design for the 325-352 MHz band with BLP15H9S10G (Report)

    Measurement results of a Class-AB design for the 325-352 MHz band with BLP15H9S10G

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  • Measurement results of a Class-AB design for the 80-100 MHz band with ART2K0FE (Report)

    Measurement results of a Class-AB design for the 80-100 MHz band with ART2K0FE

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  • Measurement results of a Symmetric Ultra Wideband Doherty design with ART2K0FE for 165 to 235 MHz (Report)

    Measurement results of a Symmetric Ultra Wideband Doherty design with ART2K0FE for 165 to 235 MHz

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  • Measurement results of a wideband performance of CLF3H0035-100 in the 500-2500 MHz band (Report)

    Measurement results of a wideband performance of CLF3H0035-100 in the 500-2500 MHz band

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  • Measurement results of the demo BLP2425M10S250P in 2400-2500 MHz (Report)

    Measurement results of the demo BLP2425M10S250P in 2400-2500 MHz

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  • Measurement results of ART700FH in Board #AR212069 tested over the 30-520 MHz band at 50 V (Report)

    Measurement results of ART700FH in Board #AR212069 tested over the 30-520 MHz band at 50 V

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  • Measurement results of a DVB-T digital TV transmitter design with BLF989 at 470-494 MHz (Report)

    Measurement results of a DVB-T digital TV transmitter design with BLF989 at 470-494 MHz

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  • Measurement results of a demoboard design with ART35FE in the 81-108 MHz band (Report)

    Measurement results of a demoboard design with ART35FE in the 81-108 MHz band

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  • Measurement results of BLF989 in Board #AR192124 tuned for 470-700 MHz at 50 V (Report)

    Measurement results of BLF989 in Board #AR192124 tuned for 470-700 MHz at 50 V

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  • Measurement results of a wideband demoboard design with ART35FE in the 10-54 MHz band (Report)

    Measurement results of a wideband demoboard design with ART35FE in the 10-54 MHz band

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  • Measurement results of ART1K6FH in Board #AR212099 tuned for 79-85 MHz at 50 V (Report)

    Measurement results of ART1K6FH in Board #AR212099 tuned for 79-85 MHz at 50 V

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  • Measurement results of a Class-AB design for the 960-1215 MHz band with CLL3H0914L(S)-700 (Report)

    Measurement results of a Class-AB design for the 960-1215 MHz band with CLL3H0914L(S)-700

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  • Measurement results of CW design with BLP0427M9S20 at 30-512 MHz (Report)

    Measurement results of CW design with BLP0427M9S20 at 30-512 MHz

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  • Measurement results of a demoboard design with BLF974P optimized for 225 MHz (Report)

    Measurement results of a demoboard design with BLF974P optimized for 225 MHz

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  • Measurement results of an A-symmetric Ultra Wideband Doherty design with BLF989E for 470 to 700 MHz (Report)

    Measurement results of an A-symmetric Ultra Wideband Doherty design with BLF989E for 470 to 700 MHz

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  • Measurement results of a Class-AB design for the 902-928 MHz band with BLP0427M9S20 (Report)

    Measurement results of a Class-AB design for the 902-928 MHz band with BLP0427M9S20

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  • Measurement results of a Class-AB design for the 2900 to 3500 MHz band with BLS9G2735L-50 (Report)

    Measurement results of a Class-AB design for the 2900 to 3500 MHz band with BLS9G2735L-50

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  • Measurement results of a Class-AB design for the 325-352 MHz band with BLP15H9S100G (Report)

    Measurement results of a Class-AB design for the 325-352 MHz band with BLP15H9S100G

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  • Measurement results of a Class-AB design for the 2900 to 3400 MHz band with BLS9G2934LS-400 (Report)

    Measurement results of a Class-AB design for the 2900 to 3400 MHz band with BLS9G2934LS-400

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  • Measurement results of a Class-AB design for the 1030 MHz to 1090 MHz band with BLA9H0912L(S)-250 (Report)

    Measurement results of a Class-AB design for the 1030 MHz to 1090 MHz band with BLA9H0912L(S)-250

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  • Measurement results of a Class-AB design for the 1300 MHz band with BLF13H9LS750P (Report)

    Measurement results of a Class-AB design for the 1300 MHz band with BLF13H9LS750P

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  • Measurement results of a Class-AB design for the 2700 to 3100 MHz band with BLS9G2731LS-400 (Report)

    Measurement results of a Class-AB design for the 2700 to 3100 MHz band with BLS9G2731LS-400

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  • Measurement results of CLF3H0060-30 at 50 V over 500-2700 MHz (Report)

    Measurement results of CLF3H0060-30 at 50 V over 500-2700 MHz

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  • Measurement results of a 2400-2500 MHz demo with BLC2425M10LS500P (Report)

    Measurement results of a 2400-2500 MHz demo with BLC2425M10LS500P

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  • Measurement results of BLF0910H9LS600 in Board #AR182075 tuned for the 902-928 MHz band at 50 V (Report)

    Measurement results of BLF0910H9LS600 in Board #AR182075 tuned for the 902-928 MHz band at 50 V

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  • Measurement results of CW design with BLP15M9S30 at 915 MHz (Report)

    Measurement results of CW design with BLP15M9S30 at 915 MHz

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  • Measurement results of a class E generator design for the 40 MHz band with ART150PEG (Report)

    Measurement results of a class E generator design for the 40 MHz band with ART150PEG

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  • Measurement results of a demoboard design with BLF978P optimized for 352 MHz (Report)

    Measurement results of a demoboard design with BLF978P optimized for 352 MHz

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  • Measurement results of BLF978P in Board #AR202059 tuned for 500 MHz at 45 V (Report)

    Measurement results of BLF978P in Board #AR202059 tuned for 500 MHz at 45 V

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  • Measurement results of a 40 MHz generator with ART150PEG (Report)

    Measurement results of a 40 MHz generator with ART150PEG

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  • Measurement results of a 6.78 MHz Class EF2 Generator with ART150PEG (Report)

    Measurement results of a 6.78 MHz Class EF2 Generator with ART150PEG

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  • Measurement results of a Class-AB broadband amplifier design with BLP0408H9S30 for 470 to 860 MHz (Report)

    Measurement results of a Class-AB broadband amplifier design with BLP0408H9S30 for 470 to 860 MHz

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  • Measurement results of a Class-AB broadband amplifier design with BLF989 for 470 to 700 MHz (Report)

    Measurement results of a Class-AB broadband amplifier design with BLF989 for 470 to 700 MHz

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  • Measurement results of a Class-AB design for the 2700 to 2900 MHz band with BLS9G2729LS-350 (Report)

    Measurement results of a Class-AB design for the 2700 to 2900 MHz band with BLS9G2729LS-350

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  • Measurement results of a Class-AB design for the 1030 to 1090 MHz band (TACAN) with BLA9H0912L(S)-700 (Report)

    Measurement results of a Class-AB design for the 1030 to 1090 MHz band (TACAN) with BLA9H0912L(S)-700

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  • Measurement results of a Class-AB design for the 1450-1550 MHz band with BLP0427M9S20G (Report)

    Measurement results of a Class-AB design for the 1450-1550 MHz band with BLP0427M9S20G

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  • Measurement results of a Class-AB design for the 2900 to 3300 MHz band with BLS9G2735L-50 (Report)

    Measurement results of a Class-AB design for the 2900 to 3300 MHz band with BLS9G2735L-50

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  • Measurement results of a Class-AB design for the 150-170 MHz band with BLP5LA55S (Report)

    Measurement results of a Class-AB design for the 150-170 MHz band with BLP5LA55S

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  • Measurement results of a Class-AB design for the 225-400 MHz band with BLP9LA25S (Report)

    Measurement results of a Class-AB design for the 225-400 MHz band with BLP9LA25S

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  • Measurement results of a Class-AB design for the 3100 to 3500 MHz band with BLS9G3135LS-400 (Report)

    Measurement results of a Class-AB design for the 3100 to 3500 MHz band with BLS9G3135LS-400

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  • Measurement results of a Class-AB design for the 800-870 MHz band with BLP9LA25S (Report)

    Measurement results of a Class-AB design for the 800-870 MHz band with BLP9LA25S

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  • Measurement results of a Class-AB design for the 960 MHz to 1215 MHz band (TACAN) with BLA9H0912L(S)-250 (Report)

    Measurement results of a Class-AB design for the 960 MHz to 1215 MHz band (TACAN) with BLA9H0912L(S)-250

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  • Measurement results of a Class-AB design for the 960 to 1215 MHz band with BLA9H0912L(S)-1200P (Report)

    Measurement results of a Class-AB design for the 960 to 1215 MHz band with BLA9H0912L(S)-1200P

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  • Measurement results of a demo designed for DVB-T digital TV transmitter application with BLP15H9S100 at 470-700 MHz (Report)

    Measurement results of a demo designed for DVB-T digital TV transmitter application with BLP15H9S100 at 470-700 MHz

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  • Measurement results of a demoboard design with ART150FE at 64 MHz (Report)

    Measurement results of a demoboard design with ART150FE at 64 MHz

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  • Measurement results of a Class-AB planar balun design for the 41 MHz band with ART2K0FE (Report)

    Measurement results of a Class-AB planar balun design for the 41 MHz band with ART2K0FE

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  • Measurement results of a demoboard design with BLM2425M9S20 in the 2.4-2.5 GHz band (Report)

    Measurement results of a demoboard design with BLM2425M9S20 in the 2.4-2.5 GHz band

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  • Measurement results of a Class-AB design for the 960 to 1215 MHz band with BLA9H0912L(S)-1200P (Report)

    Measurement results of a Class-AB design for the 960 to 1215 MHz band with BLA9H0912L(S)-1200P

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  • Measurement results of a demoboard design with BLF0910H9LS750P at 902-928 MHz (Report)

    Measurement results of a demoboard design with BLF0910H9LS750P at 902-928 MHz

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  • Measurement results of a demoboard design with ART150FE at 128 MHz (Report)

    Measurement results of a demoboard design with ART150FE at 128 MHz

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  • Measurement results of CW design with BLP0427M9S20 at 88-108 MHz (Report)

    Measurement results of CW design with BLP0427M9S20 at 88-108 MHz

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  • Measurement results of a Class-AB design for the 1025-1150 MHz band with BLP15H9S30 (Report)

    Measurement results of a Class-AB design for the 1025-1150 MHz band with BLP15H9S30

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  • Measurement results of planar balun design at 60 MHz with ART2K0FE (Report)

    Measurement results of planar balun design at 60 MHz with ART2K0FE

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  • Measurement results of ART2K0FE in Board #AR212087 tested over 430-435 MHz at 62 V (Report)

    Measurement results of ART2K0FE in Board #AR212087 tested over 430-435 MHz at 62 V

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  • Measurement results of BLP05H9S500P in Board #AR212045 tuned for 430-450 MHz at 50 V (Report)

    Measurement results of BLP05H9S500P in Board #AR212045 tuned for 430-450 MHz at 50 V

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  • Measurement results of a 2400-2500 MHz demo with BLC2425M10LS250 (Report)

    Measurement results of a 2400-2500 MHz demo with BLC2425M10LS250

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  • Package outline PQFN-12x7-36-1 (Outline drawing)

    Package outline PQFN-12x7-36-1

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  • Dual flat no leads plastic package (Outline drawing)

    Dual flat no leads plastic package

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  • Dual flat no leads plastic package (Outline drawing)

    Dual flat no leads plastic package

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  • Measurement results of a Class-AB design for the 3000 to 3100 MHz band with BLS9G2735L-50 (Report)

    Measurement results of a Class-AB design for the 3000 to 3100 MHz band with BLS9G2735L-50

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  • Measurement results of ART700FH measured at 50 V over 24-30 MHz (Report)

    Measurement results of ART700FH measured at 50 V over 24-30 MHz

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  • LDMOS 1-stage integrated Doherty MMIC (Data sheet)

    LDMOS 1-stage integrated Doherty MMIC

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  • LDMOS 2-stage integrated Doherty MMIC (Data sheet)

    LDMOS 2-stage integrated Doherty MMIC

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  • LDMOS 3-stage integrated Doherty MMIC (Data sheet)

    LDMOS 3-stage integrated Doherty MMIC

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  • LDMOS 1-stage integrated Doherty MMIC (Data sheet)

    LDMOS 1-stage integrated Doherty MMIC

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  • LDMOS 3-stage integrated Doherty MMIC (Data sheet)

    LDMOS 3-stage integrated Doherty MMIC

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  • LDMOS 3-stage integrated Doherty MMIC (Data sheet)

    LDMOS 3-stage integrated Doherty MMIC

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Broadband RF power GaN HEMT (Data sheet)

    Broadband RF power GaN HEMT

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  • LDMOS 3-stage integrated Doherty MMIC (Data sheet)

    LDMOS 3-stage integrated Doherty MMIC

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  • Printed-Circuit Board (PCB) ART1K6FH(S)(G) (Data sheet) (Design support)

    Printed-Circuit Board (PCB) ART1K6FH(S)(G) (Data sheet)

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  • LDMOS 3-stage integrated Doherty MMIC (Data sheet)

    LDMOS 3-stage integrated Doherty MMIC

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  • UHF power LDMOS transistor (Data sheet)

    UHF power LDMOS transistor

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  • Ampleon RF Solid State Cooking Whitepaper (White paper)

    Ampleon RF Solid State Cooking Whitepaper

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  • RF Power Transistors for Broadband Applications White Paper (White paper)

    RF Power Transistors for Broadband Applications White Paper

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  • Ampleon’s advancements with ruggedized Si LDMOS transistors of up to 2 kW of RF Power for 1 through 400 MHz Whitepaper (White paper)

    Ampleon’s advancements with ruggedized Si LDMOS transistors of up to 2 kW of RF Power for 1 through 400 MHz Whitepaper

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  • Doherty Architectures in UHF Whitepaper (White paper)

    Doherty Architectures in UHF Whitepaper

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  • Ampleon’s Ultra Wideband Doherty (UWD) for TV Transmitters White Paper (White paper)

    Ampleon’s Ultra Wideband Doherty (UWD) for TV Transmitters White Paper

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  • Thermal characteristics of GaN power transistors (Application note)

    Thermal characteristics of GaN power transistors

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  • Extremely Rugged 50 V LDMOS Devices Capture ISM and Broadcast Markets Whitepaper (White paper)

    Extremely Rugged 50 V LDMOS Devices Capture ISM and Broadcast Markets Whitepaper

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  • Printed-Circuit Board (PCB) ART2K0FE(S)(G) (Data sheet) (Design support)

    Printed-Circuit Board (PCB) ART2K0FE(S)(G) (Data sheet)

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  • LDMOS 2-stage integrated Doherty MMIC (Data sheet)

    LDMOS 2-stage integrated Doherty MMIC

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  • LDMOS 2-stage integrated Doherty MMIC (Data sheet)

    LDMOS 2-stage integrated Doherty MMIC

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  • LDMOS 3-stage integrated Doherty MMIC (Data sheet)

    LDMOS 3-stage integrated Doherty MMIC

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  • LDMOS 2-stage power MMIC (Data sheet)

    LDMOS 2-stage power MMIC

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Model Library Manual for Cadence AWR Microwave Office® (Simulation model)

    Model Library Manual for Cadence AWR Microwave Office®

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Plastic; heatsink small outline package; 2 leads (Outline drawing)

    Plastic; heatsink small outline package; 2 leads

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Plastic; heatsink small outline package; 2 leads (flat) (Outline drawing)

    Plastic; heatsink small outline package; 2 leads (flat)

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • LDMOS avionics power transistor (Data sheet)

    LDMOS avionics power transistor

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  • L-band internally pre-matched GaN-SiC HEMT (Data sheet)

    L-band internally pre-matched GaN-SiC HEMT

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  • Printed-Circuit Board (PCB) ART150PE(G) (Data sheet) (Design support)

    Printed-Circuit Board (PCB) ART150PE(G) (Data sheet)

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  • LDMOS 2-stage integrated Doherty MMIC (Data sheet)

    LDMOS 2-stage integrated Doherty MMIC

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  • LDMOS 3-stage integrated Doherty MMIC (Data sheet)

    LDMOS 3-stage integrated Doherty MMIC

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  • LDMOS 3-stage integrated Doherty MMIC (Data sheet)

    LDMOS 3-stage integrated Doherty MMIC

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  • HF / VHF power LDMOS transistor (Data sheet)

    HF / VHF power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • HF / VHF power LDMOS transistor (Data sheet)

    HF / VHF power LDMOS transistor

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  • Package outline OMP-1230-6F-1 (Outline drawing)

    Package outline OMP-1230-6F-1

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  • Printed-Circuit Board (PCB) ART700FH(S)(G) (Data sheet) (Design support)

    Printed-Circuit Board (PCB) ART700FH(S)(G) (Data sheet)

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  • Ampleon Sustainability Report 2021 (Other type)

    Ampleon Sustainability Report 2021

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  • LDMOS 2-stage integrated Doherty MMIC (Data sheet)

    LDMOS 2-stage integrated Doherty MMIC

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  • LDMOS 3-stage integrated Doherty MMIC (Data sheet)

    LDMOS 3-stage integrated Doherty MMIC

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • LDMOS 3-stage integrated Doherty MMIC (Data sheet)

    LDMOS 3-stage integrated Doherty MMIC

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  • ART700FH Model for ADS (Keysight Advanced Design System) (Simulation model)

    ART700FH Model for ADS (Keysight Advanced Design System)

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • LDMOS 3-stage integrated Doherty MMIC (Data sheet)

    LDMOS 3-stage integrated Doherty MMIC

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Printed-Circuit Board (PCB) ART1K6PH(G) (Data sheet) (Design support)

    Printed-Circuit Board (PCB) ART1K6PH(G) (Data sheet)

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • Earless flanged balanced ceramic package; 4 leads (Outline drawing)

    Earless flanged balanced ceramic package; 4 leads

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  • LDMOS 2-stage integrated Doherty MMIC (Data sheet)

    LDMOS 2-stage integrated Doherty MMIC

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  • LDMOS 2-stage power MMIC (Data sheet)

    LDMOS 2-stage power MMIC

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  • BLA9G1011L(S)-300 Model for ADS (Keysight Advanced Design System) (Simulation model)

    BLA9G1011L(S)-300 Model for ADS (Keysight Advanced Design System)

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  • BLF9G38LS-90P Model for ADS (Keysight Advanced Design System) (Simulation model)

    BLF9G38LS-90P Model for ADS (Keysight Advanced Design System)

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  • BLL8H0514L(S)-130 Model for ADS (Keysight Advanced Design System) (Simulation model)

    BLL8H0514L(S)-130 Model for ADS (Keysight Advanced Design System)

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  • BLS9G3135L(S)-115 Model for ADS (Keysight Advanced Design System) (Simulation model)

    BLS9G3135L(S)-115 Model for ADS (Keysight Advanced Design System)

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  • BLF189XRB(S) Model for ADS (Keysight Advanced Design System) (Simulation model)

    BLF189XRB(S) Model for ADS (Keysight Advanced Design System)

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  • BLF881(S) Model for ADS (Keysight Advanced Design System) (Simulation model)

    BLF881(S) Model for ADS (Keysight Advanced Design System)

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  • Measurement results of a Class-AB/B design for the 380-460 MHz band with the BLP9LA25S (Report)

    Measurement results of a Class-AB/B design for the 380-460 MHz band with the BLP9LA25S

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  • Measurement results of a Class-AB design for the 1030-1090 MHz with the BLA9G1011L(S)-300(G) (Report)

    Measurement results of a Class-AB design for the 1030-1090 MHz with the BLA9G1011L(S)-300(G)

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  • BLL8H1214L(S)-250 Model for ADS (Keysight Advanced Design System) (Simulation model)

    BLL8H1214L(S)-250 Model for ADS (Keysight Advanced Design System)

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  • BLP15M7160P Model for ADS (Keysight Advanced Design System) (Simulation model)

    BLP15M7160P Model for ADS (Keysight Advanced Design System)

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  • BLP05M7200 Model for ADS (Keysight Advanced Design System) (Simulation model)

    BLP05M7200 Model for ADS (Keysight Advanced Design System)

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  • Measurement results of the narrowband demo of BLF0910H9LS750P optimized for 915 MHz (Report)

    Measurement results of the narrowband demo of BLF0910H9LS750P optimized for 915 MHz

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  • Application Note OM3999 (Application note)

    Application Note OM3999

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  • Programing User Guide (Application note)

    Programing User Guide

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  • Assembly and Usage Guidelines of RF Pallets (Application note)

    Assembly and Usage Guidelines of RF Pallets

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  • Measurement results of a Class-AB design for the 3100 to 3500 MHz band with the BLS9G3135L(S)-115 (Report)

    Measurement results of a Class-AB design for the 3100 to 3500 MHz band with the BLS9G3135L(S)-115

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  • Measurement results of a demoboard design for the BLP05H9S500P optimized for 500 W, 433 MHz (Report)

    Measurement results of a demoboard design for the BLP05H9S500P optimized for 500 W, 433 MHz

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  • Mounting and Soldering of RF transistors in Air Cavity Packages (Application note)

    Mounting and Soldering of RF transistors in Air Cavity Packages

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  • Uppsala University's BLF188XR single ended amplifier at 352 MHz (Application note)

    Uppsala University's BLF188XR single ended amplifier at 352 MHz

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  • General PCB design and transistor mounting guidelines to achieve optimum performance with the BLF0910H9LS600 (Application note)

    General PCB design and transistor mounting guidelines to achieve optimum performance with the BLF0910H9LS600

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  • Quick Start OM3999 (Application note)

    Quick Start OM3999

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  • Measurement results of a Class-AB design for the 1200 to 1400MHz band with the BLL9G1214LS-600 (Report)

    Measurement results of a Class-AB design for the 1200 to 1400MHz band with the BLL9G1214LS-600

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  • Measurement results of a Class-AB design for the 352 MHz band with the BLF978P (Report)

    Measurement results of a Class-AB design for the 352 MHz band with the BLF978P

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  • Earless flanged ceramic package; 6 leads (Outline drawing)

    Earless flanged ceramic package; 6 leads

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  • Earless flanged ceramic package; 6 leads (Outline drawing)

    Earless flanged ceramic package; 6 leads

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  • WiMAX power LDMOS transistor (Data sheet)

    WiMAX power LDMOS transistor

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  • Measurement results of a 41 MHz amplifier with the ART450FE (Report)

    Measurement results of a 41 MHz amplifier with the ART450FE

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  • ART450FE Model for Cadence AWR Microwave Office® (Simulation model)

    ART450FE Model for Cadence AWR Microwave Office®

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  • CLF3H0060(S)-10 Model for ADS (Keysight Advanced Design System) (Simulation model)

    CLF3H0060(S)-10 Model for ADS (Keysight Advanced Design System)

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  • ART2K0TFES Model for ADS (Keysight Advanced Design System) (Simulation model)

    ART2K0TFES Model for ADS (Keysight Advanced Design System)

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  • ART2K0TFEG Model for ADS (Keysight Advanced Design System) (Simulation model)

    ART2K0TFEG Model for ADS (Keysight Advanced Design System)

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  • ART450FE Model for ADS (Keysight Advanced Design System) (Simulation model)

    ART450FE Model for ADS (Keysight Advanced Design System)

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  • Broadband RF power GaN HEMT (Data sheet)

    Broadband RF power GaN HEMT

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  • Measurement results of the BLP15M9S70 at 28-32 V over 950-1200 MHz (Report)

    Measurement results of the BLP15M9S70 at 28-32 V over 950-1200 MHz

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  • Measurement results of a Class-AB design for the 1030-1090 MHz band with BLP15H9S10 (Report)

    Measurement results of a Class-AB design for the 1030-1090 MHz band with BLP15H9S10

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  • Measurement results of the ART700PEG in Board #AR212139 tuned for 88-108 MHz at 50 V (Report)

    Measurement results of the ART700PEG in Board #AR212139 tuned for 88-108 MHz at 50 V

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  • Printed-Circuit Board (PCB) ART2K0TFES(G) (Data sheet) (Design support)

    Printed-Circuit Board (PCB) ART2K0TFES(G) (Data sheet)

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  • Ampleon Code of Conduct (Brochure)

    Ampleon Code of Conduct

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  • Printed-Circuit Board (PCB) ART450FE (Data sheet) (Design support)

    Printed-Circuit Board (PCB) ART450FE (Data sheet)

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  • Broadband RF power GaN HEMT (Data sheet)

    Broadband RF power GaN HEMT

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  • BLF944P Model for ADS (Keysight Advanced Design System) (Simulation model)

    BLF944P Model for ADS (Keysight Advanced Design System)

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  • Power LDMOS transistor (Data sheet)

    Power LDMOS transistor

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  • ART2K0PE Model for ADS (Keysight Advanced Design System) (Simulation model)

    ART2K0PE Model for ADS (Keysight Advanced Design System)

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  • ART2K0PE Simulation Example for Cadence AWR Microwave Office® (Simulation model)

    ART2K0PE Simulation Example for Cadence AWR Microwave Office®

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  • ART2K0PE Model for Cadence AWR Microwave Office® (Simulation model)

    ART2K0PE Model for Cadence AWR Microwave Office®

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  • Ampleon Sustainability Report 2022 (Other type)

    Ampleon Sustainability Report 2022

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  • ART2K0TFES Simulation Example for Cadence AWR Microwave Office® (Simulation model)

    ART2K0TFES Simulation Example for Cadence AWR Microwave Office®

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  • Mounting and soldering of RF transistors in overmolded plastic packages (Application note)

    Mounting and soldering of RF transistors in overmolded plastic packages

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  • ART2K0TFES Model for Cadence AWR Microwave Office® (Simulation model)

    ART2K0TFES Model for Cadence AWR Microwave Office®

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  • Printed-Circuit Board (PCB) ART2K0PE(G) (Data sheet) (Design support)

    Printed-Circuit Board (PCB) ART2K0PE(G) (Data sheet)

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  • Measurement results of BLF944P in board #AR232026 tested over 30-520 MHz at 28 V (Report)

    Measurement results of BLF944P in board #AR232026 tested over 30-520 MHz at 28 V

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  • BLF2425M9L30(S) Model for ADS (Keysight Advanced Design System) (Simulation model)

    BLF2425M9L30(S) Model for ADS (Keysight Advanced Design System)

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  • LDMOS 3-stage integrated Doherty MMIC (Data sheet)

    LDMOS 3-stage integrated Doherty MMIC

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  • LDMOS 2-stage integrated Doherty MMIC (Data sheet)

    LDMOS 2-stage integrated Doherty MMIC

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  • ART800PE Model for Cadence AWR Microwave Office® (Simulation model)

    ART800PE Model for Cadence AWR Microwave Office®

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  • Measurement results of a 1600 W 352 MHz CW power amplifier using the LDMOS ART2K0PE power transistor and PCB integrated coplanar baluns (Report)

    Measurement results of a 1600 W 352 MHz CW power amplifier using the LDMOS ART2K0PE power transistor and PCB integrated coplanar baluns

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  • Measurement results of a Class AB planar balun design for the 41 MHz band with the ART2K0PE (Report)

    Measurement results of a Class AB planar balun design for the 41 MHz band with the ART2K0PE

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  • Measurement results of a Class AB design for the 88-108 MHz band with the ART2K0PE (Report)

    Measurement results of a Class AB design for the 88-108 MHz band with the ART2K0PE

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  • Printed-Circuit Board (PCB) ART800PE(G) (Data sheet) (Design support)

    Printed-Circuit Board (PCB) ART800PE(G) (Data sheet)

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  • Measurement results of a demo board at 13.56 MHz with the ART35FE (Report)

    Measurement results of a demo board at 13.56 MHz with the ART35FE

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  • Measurement results of 57-63 MHz amplifier with the ART800PE (Report)

    Measurement results of 57-63 MHz amplifier with the ART800PE

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  • Measurement results of a concept module based on ART2K0 optimized for 13.5 MHz, 27 MHz and 41 MHz pulsed and CW applications (Report)

    Measurement results of a concept module based on ART2K0 optimized for 13.5 MHz, 27 MHz and 41 MHz pulsed and CW applications

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  • ART800PE Model for ADS (Keysight Advanced Design System) (Simulation model)

    ART800PE Model for ADS (Keysight Advanced Design System)

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  • ART450FE Simulation Example for Cadence AWR Microwave Office® (Simulation model)

    ART450FE Simulation Example for Cadence AWR Microwave Office®

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  • LGA-12x8-34-2 (Outline drawing)

    LGA-12x8-34-2

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  • Plastic, heatsink small outline package; 4 leads (flat) (Outline drawing)

    Plastic, heatsink small outline package; 4 leads (flat)

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  • Measurement results of a Class E amplifier design for the 41MHz band using the ART2k0 transistor (Report)

    Measurement results of a Class E amplifier design for the 41MHz band using the ART2k0 transistor

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  • RF Power application reports for Broadcast, Navigation and Safety Radio, Industrial, Scientific and Medical applications (Brochure)

    RF Power application reports for Broadcast, Navigation and Safety Radio, Industrial, Scientific and Medical applications

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  • Overmolded plastic earless flanged package; 6 leads (Outline drawing)

    Overmolded plastic earless flanged package; 6 leads

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  • ART2K5TPU Model for ADS (Keysight Advanced Design System) (Simulation model)

    ART2K5TPU Model for ADS (Keysight Advanced Design System)

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  • Ampleon Statement of Compliance to REACH SVHC (Other type)

    Ampleon Statement of Compliance to REACH SVHC

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  • ART1K6FH(S) Simulation Example for Cadence AWR Microwave Office® (Simulation model)

    ART1K6FH(S) Simulation Example for Cadence AWR Microwave Office®

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  • ART800PE Simulation Example for Cadence AWR Microwave Office® (Simulation model)

    ART800PE Simulation Example for Cadence AWR Microwave Office®

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  • LDMOS 3-stage integrated Doherty MMIC (Data sheet)

    LDMOS 3-stage integrated Doherty MMIC

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  • RF Power Solutions for Wireless Infrastructure (Brochure)

    RF Power Solutions for Wireless Infrastructure

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  • ART1K6FH(S) Model for Cadence AWR Microwave Office® (Simulation model)

    ART1K6FH(S) Model for Cadence AWR Microwave Office®

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  • Our Company, Businesses, Technologies and Products (Leaflet)

    Our Company, Businesses, Technologies and Products

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  • Printed-Circuit Board (PCB) ART2K5TPU (Data sheet) (Design support)

    Printed-Circuit Board (PCB) ART2K5TPU (Data sheet)

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  • ART2K0PEG Model for ADS (Keysight Advanced Design System) (Simulation model)

    ART2K0PEG Model for ADS (Keysight Advanced Design System)

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  • ART800PEG Model for ADS (Keysight Advanced Design System) (Simulation model)

    ART800PEG Model for ADS (Keysight Advanced Design System)

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  • Packages for RF Power Transistors (Leaflet)

    Packages for RF Power Transistors

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  • Ampleon Longevity Overview (Other type)

    Ampleon Longevity Overview

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  • 针对下述应用的RF 功率解决方案 广播, 航空航天和国防 工业、科学和医疗 (Brochure)

    针对下述应用的RF 功率解决方案 广播, 航空航天和国防 工业、科学和医疗

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  • ART2K5TFUS Model for ADS (Keysight Advanced Design System) (Simulation model)

    ART2K5TFUS Model for ADS (Keysight Advanced Design System)

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  • Printed-Circuit Board (PCB) ART2K5TFUS(G) (Data sheet) (Design support)

    Printed-Circuit Board (PCB) ART2K5TFUS(G) (Data sheet)

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  • Printed-Circuit Board (PCB) ART1K9FH (Data sheet) (Design support)

    Printed-Circuit Board (PCB) ART1K9FH (Data sheet)

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  • ART1K9FH Model for ADS (Keysight Advanced Design System) (Simulation model)

    ART1K9FH Model for ADS (Keysight Advanced Design System)

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  • ART2K5TFUG Model for ADS (Keysight Advanced Design System) (Simulation model)

    ART2K5TFUG Model for ADS (Keysight Advanced Design System)

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  • RF Power solutions for Broadcast, Navigation and Safety Radio, Industrial, Scientific and Medical applications (Brochure)

    RF Power solutions for Broadcast, Navigation and Safety Radio, Industrial, Scientific and Medical applications

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  • Ampleon Model Overview (Other type)

    Ampleon Model Overview

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