Waves of innovation
… is the theme of this year’s European Microwave Week (EuMW), taking place from September 21–26 in Utrecht, The Netherlands. This leading annual event brings together experts in microwaves, RF, wireless, and radar technologies for a week of exhibitions, workshops, and technical sessions. We look forward to seeing you there! If you have any questions or wish to plan a meeting at EuMW, please do not hesitate to contact us.
As a global leader in RF power technology, Ampleon will showcase its latest LDMOS and GaN RF power solutions at booth #E076 during EuMW 2025 from September 23 to 25.
This year, we will highlight innovations for base stations, radar, industrial, and scientific applications. Our experts will be showcasing high-efficiency GaN solutions for massive MIMO and Macro finals, compact 50 V LDMOS Doherty drivers, the ultra-compact ART4K0FX solution for 13.56 MHz, GaN-on-SiC HEMTs delivering over 700 W for radar applications, and solid-state PA high-power GaN solutions for industrial heating and particle accelerators.
Our technical experts will be part of the conference program.
Sunday, Sept. 21, 2025 / Room Beam
Workshop Thermal Effects and Heat Management in Active Phased Arrays: Chip, Package and Antenna Level Concepts
08:30 – 17:50 Thermal Modeling and Characterization of GaN and LDMOS Power Amplifiers, Amir Mirza Gheytaghi, Ampleon
Monday, Sept. 22, 2025 / Room: Auditorium
6G Forum
Chair: Prof. Bart Smolders (Eindhoven University of Technology)
Organizing committee: Ulf Gustavsson (Ericsson), John Gajadharsing (Ampleon), Jos Berière (TNO/ FNS-6G) and Bart Smolders (Eindhoven University of Technology
6G technologies, Sub-6 towards 7-24 GHz, (FR1, FR3)
14:50 – 15:20 New semiconductor technologies for improved power efficiency, Fred van Rijs, Ampleon
Tuesday, Sept. 23 / Hall 7
Interactive Poster Session
EuMIC/EuMC03-12 Thermal Resistance Estimation for AlGaN/GaN HEMTs with Trapping Effects
Zhijian Yu and Amir Mirza Gheytaghi, Ampleon
Wednesday, Sept 24 / Room Polar
EuMC36 MTT-ISTP Panel Session: Photovoltaic Power Orbital Station – A Future at Reach with Microwaves?
MC37-4 Thermal Characterization of Radio Frequency Power Amplifier with Thermal Transient Test
Amir Mirza Gheytaghi & Vittorio Cuoco, Ampleon, et al
ART4K0FX
- Full CW application for 13.56 MHz
- Optimized design for max power 2500 W @ 65 V
- Changing BOM of application the same PCB design can tuned for max. CW power or tuned to max. efficiency
- Lowest volume 152 x 60 x 30 mm due to unique patented multilayer coplanar balun
CLS3H2731L(S)-700
- GaN-on-SiC HEMT operating at 50 V
- Solid State PA for low maintenance and long-life cycle
- Highest efficiency in combination with low Rth ensuring low SWaP
- Available in SOT502, eared and earless
C4H10P800A
- Highly efficient GaN Macro final for 80 and 100 W Macro base stations suitable for applications in 600–1000 MHz frequency range
- Compact and cost-effective design due to OMP780 footprint
C4H10P600A
- Highly efficient GaN Macro final for 60 W Macro base stations suitable for applications in 600–1000 MHz frequency range
- Compact and cost-effective design due to OMP780 footprint
C5H3337N110D
- High efficiency Doherty GaN final
- 400 MHz wideband performance
- Compact QFN 8 x 8 mm package
- Enabling compact massive MIMO GaN PA line-up
C5H3438N110D
- High efficiency Doherty GaN final
- 400 MHz wideband performance
- Compact QFN 8 x 8 mm package
- Enabling compact massive MIMO GaN PA line-up
B10H0710N40D
- Multiband, highly efficient driver for 40, 60 and 80 W sub-1 GHz Macro base stations
- Compact and cost-effective design: 12 x 8 mm footprint, single-BOM reconfigurable layout, no interstage isolator
B10H0608N40D
- Multiband, highly efficient driver for 40, 60 and 80 W sub-1 GHz Macro base stations
- Compact and cost-effective design: 12 x 8 mm footprint, single-BOM reconfigurable layout, no interstage isolator