LDMOS 2-stage integrated Doherty MMIC

The B11G1822N60D is a dual section 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range 1800 MHz to 2200 MHz. Available in PQFN outline.

Features and benefits

  • Integrated input splitter
  • Integrated output combiner
  • 20 Ω output impedance thanks to integrated pre-match
  • High linearity
  • Designed for large RF and instantaneous bandwidth operation
  • Independent control of carrier and peaking bias
  • Integrated bias gate switch
  • Integrated ESD protection
  • Source impedance 50 Ω; high power gain
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Macrocell base station driver
  • Microcell base station
  • 5G mMIMO
  • W-CDMA/LTE
  • Active antenna
  • General purpose applications

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1800 2200 MHz
PL(1dB) nominal output power at 1 dB gain compression 70 W
Test signal: Pulsed CW
VDS drain-source voltage [0] [1] 28 V
Gp power gain PL = 5 W (37 dBm) [0] [1] 26 29 32 dB
ηD drain efficiency PL = PL(3dB) [0] [1] 43 53 %
ηD drain efficiency PL = 5 W (37 dBm) [0] [1] 20 29 %
RLin input return loss [0] [1] -15 -10 dB

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
B11G1822N60D PQFN 12x7
(PQFN-12x7-36-1)
TR13; 1500-fold; 24 mm; dry pack Active Standard Marking B11G1822N60DX
(9349 604 67525)
B11G1822N60D PQFN 12x7
(PQFN-12x7-36-1)
TR7; 300-fold; 24 mm; dry pack Active Standard Marking B11G1822N60DYZ
(9349 604 67535)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 GND ground
2 VDS2_A/decoupling drain-source voltage of final stages of section A
3 c.t.g. connect to ground
4 VGS(carr) gate-source voltage of carrier
5 VGS(peak) gate-source voltage of peaking
6 VDS1_A drain-source voltage of driver stages of section A
7 GND ground
8 n.c. not connected
9 PA_e PA enable trigger signal, 0 V to 5 V, IDq-bias ON/OFF corresponds to logic HIGH/LOW
10 VDD(5V) supply voltage (5 V)
11 GND ground
12 RF_IN_A RF input of section A
13 GND ground
14 RF_IN_B RF input of section B
15 GND ground
16 VDD(5V) supply voltage (5 V)
17 PA_e PA enable trigger signal, 0 V to 5 V, IDq-bias ON/OFF corresponds to logic HIGH/LOW
18 n.c. not connected
19 GND ground
20 VDS1_B drain-source voltage of driver stages of section B
21 VGS(peak) gate-source voltage of peaking
22 VGS(carr) gate-source voltage of carrier
23 c.t.g. connect to ground
24 VDS2_B/decoupling drain-source voltage of final stages of section B
25 GND ground
26, 27, 28, 29, 30 RF_OUT_B RF output of section B
31 GND ground
32, 33, 34, 35, 36 RF_OUT_A RF output of section A

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
B11G1822N60D 9349 604 67525 B11G1822N60DX RFMW Buy Request samples

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
B11G1822N60D B11G1822N60DX B11G1822N60D Always Pb-free 3 3
B11G1822N60D B11G1822N60DYZ B11G1822N60D Always Pb-free 3 3
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
B11G1822N60D 9349 604 67525 B11G1822N60DX RFMW Buy Request samples

Design support

Title Type Date
Printed-Circuit Board (PCB) B11G1822N60D (Data sheet) Design support 2022-01-19