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B11G4450N91D

B11G4450N91D

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LDMOS 3-stage integrated Doherty MMIC

The B11G4450N91D is a dual section 3-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range from 4400 MHz to 5000 MHz, available in 12 mm x 7 mm PQFN outline.

Features and benefits

  • Integrated input splitter
  • Integrated output combiner
  • High linearity
  • Designed for large RF and instantaneous bandwidth operation
  • Independent control of carrier and peaking bias
  • Integrated ESD protection
  • Integrated bias gate switches
  • Source impedance 50 Ω; high power gain
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Macrocell base station driver
  • Microcell base station driver
  • 5G mMIMO
  • W-CDMA/LTE
  • Active antenna
  • General purpose applications

Downloads

All application notes
All documentation

All documents

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 4400 5000 MHz
PL(1dB) nominal output power at 1 dB gain compression 48.7 W
Test signal: 1-c LTE
VDS drain-source voltage f = 4700 MHz [0] [1] 28 V
PL(AV) average output power f = 4700 MHz [0] [1] 3.467 W
Gp power gain f = 4700 MHz [0] [1] 29.4 dB
ηD drain efficiency f = 4700 MHz [0] [1] 13.5 %
ACPR20M adjacent channel power ratio (5 MHz) f = 4700 MHz [0] [1] -41 dBc

Package / Packing

Type number Package type,
(Package outline) 		Outline version Reflow-/Wave
soldering		 Packing Product status Marking Orderable part number,
(Ordering code (12NC))
B11G4450N91D PQFN-12x7
(PQFN-12x7-36-1)		 pqfn-12x7-36-1_po TR13, 1500-fold, 24mm, dry-pack Active Standard Marking B11G4450N91DX
(9349 610 13525)
TR7, 300-fold, 24mm, dry-pack Active Standard Marking B11G4450N91DYZ
(9349 610 13535)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 GND ground
2 VDS2_A / decoupling_A drain-source voltage and decoupling of final stage of section A
3 n.c. not connected [2]
4 VGS(carrier) gate-source voltage of carrier [3]
5 VGS(peaking) gate-source voltage of peaking [4]
6 VDS1_A drain-source voltage of driver stages of section A
7 GND ground
8 decoupling video-lead for decoupling of driver stage of section A
9 PA_e PA enable trigger signal, 0 V to 5 V, IDq-bias ON/OFF corresponds to logic HIGH/LOW [5]
10 VDD(5V) supply voltage (5 V) [6]
11 GND ground
12 RF_IN_A RF input of section A
13 GND ground
14 RF_IN_B RF input of section B
15 GND ground
16 VDD(5V) supply voltage (5 V) [6]
17 PA_e PA enable trigger signal, 0 V to 5 V, IDq-bias ON/OFF corresponds to logic HIGH/LOW [5]
18 decoupling video-lead for decoupling of driver stage of section B
19 GND ground
20 VDS1_B drain-source voltage of driver stages of section B
21 VGS(peaking) gate-source voltage of peaking [4]
22 VGS(carrier) gate-source voltage of carrier [3]
23 n.c. not connected [2]
24 V DS2_B / decoupling_B drain-source voltage and decoupling of final stage of section B
25 GND ground
26, 27, 28, 29, 30 RF_OUT_B RF output of section B
31 GND ground
32, 33, 34, 35, 36 RF_OUT_A/VDS2_A RF output of section A

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
B11G4450N91D 9349 610 13525 B11G4450N91DX Request samples
B11G4450N91D 9349 610 13535 B11G4450N91DYZ Request samples

No documentation available.