Power LDMOS transistor

Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

Features and benefits

  • High breakdown voltage enables class E operation up to VDS = 53 V
  • Qualified up to a maximum of VDS = 65 V
  • Characterized from 30 V to 65 V to support a wide range of applications
  • Integrated thermal sensor
  • Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
  • Excellent ruggedness with no device degradation
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation
  • For RoHS compliance see the product details on the Ampleon website


  • Industrial, scientific and medical applications
    • Plasma generators
    • MRI systems
    • CO2 lasers
    • Particle accelerators
  • Broadcast
    • FM radio
    • VHF TV
  • Communications
    • Non cellular communications
    • UHF radar


All application notes
All documentation

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Design tool

RF Power Lifetime Calculator


Power LDMOS transistor



Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1 400 MHz
PL(1dB) nominal output power at 1 dB gain compression 2000 W
Test signal: Pulsed RF
VDS drain-source voltage PL = 2000 W [0] 65 V
Gp power gain PL = 2000 W [0] 27 29 dB
RLin input return loss PL = 2000 W [0] -15 dB
ηD drain efficiency PL = 2000 W [0] 68 73 %

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
ART2K0TFES ACC-1230-6F-2
acc-1230-6f-2_po TR13; 100-fold; 56 mm; non-dry pack Active Standard Marking ART2K0TFESJ
(9349 606 36118)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source
6 FET1 temperature sense FET1
7 FET2 temperature sense FET2

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