B11G1822N120D
Request datasheetB11G1822N120D
Request datasheetLDMOS 2-stage integrated Doherty MMIC
The B11G1822N120D is a dual section 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range from 1800 MHz to 2200 MHz, available in 12 mm x 7 mm PQFN outline.
Features and benefits
- Integrated input splitter
- Integrated output combiner
- High linearity
- Designed for large RF and instantaneous bandwidth operation
- Independent control of carrier and peaking bias
- Integrated ESD protection
- Source impedance 50 Ω; high power gain
- For RoHS compliance see the product details on the Ampleon website
Applications
- Macrocell base station driver
- Microcell base station driver
- 5G FDD mMIMO
- 5G / W-CDMA / LTE
- General purpose applications
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1800 | 2200 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 125 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| VDS | drain-source voltage | f = 1842.5 MHz [0] [1] | 30 | V | ||
| PL(AV) | average output power | f = 1842.5 MHz [0] [1] | 5 | W | ||
| Gp | power gain | f = 1842.5 MHz [0] [1] | 30.1 | dB | ||
| ηD | drain efficiency | f = 1842.5 MHz [0] [1] | 27.4 | % | ||
| ACPR(SM) | adjacent channel power ratio (5 MHz) | f = 1842.5 MHz [0] [1] | -40.2 | dBc | ||
Package / Packing
| Type number |
Package type, (Package outline) |
Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| B11G1822N120D | PQFN-12x7 (PQFN-12x7-36-1) |
pqfn-12x7-36-1_po | TR13, 1500-fold, 24mm, dry-pack | Active | Standard Marking |
B11G1822N120DX (9349 610 59525) |
| B11G1822N120D | PQFN-12x7 (PQFN-12x7-36-1) |
pqfn-12x7-36-1_po | TR7, 300-fold, 24mm, dry-pack | Active | Standard Marking |
B11G1822N120DYZ (9349 610 59535) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | GND | ground |
|
|
| 2 | VDS2_A/decoupling | drain-source voltage of final stages of section A | ||
| 3 | n.c. | not connected [2] | ||
| 4 | Decoupling_A | video-lead for decoupling of section A | ||
| 5 | VGS(carr) | gate-source voltage of carrier | ||
| 6 | VGS(peak) | gate-source voltage of peaking | ||
| 7 | GND | ground | ||
| 8 | VDS1_A | drain-source voltage of driver stage of section A | ||
| 9 | n.c. | not connected | ||
| 10 | n.c. | not connected | ||
| 11 | GND | ground | ||
| 12 | RF_IN_A | RF input of section A | ||
| 13 | GND | ground | ||
| 14 | RF_IN_B | RF input of section B | ||
| 15 | GND | ground | ||
| 16 | n.c. | not connected | ||
| 17 | n.c. | not connected | ||
| 18 | VDS1_B | drain-source voltage of driver stage of section B | ||
| 19 | GND | ground | ||
| 20 | VGS(peak) | gate-source voltage of peaking | ||
| 21 | VGS(carr) | gate-source voltage of carrier | ||
| 22 | Decoupling_B | video-lead for decoupling section B | ||
| 23 | n.c. | not connected [2] | ||
| 24 | VDS2_B/decoupling | drain-source voltage of final stages of section B | ||
| 25 | GND | ground | ||
| 26, 27, 28, 29, 30 | RF_OUT_B | RF output of section B | ||
| 31 | GND | ground | ||
| 32, 33, 34, 35, 36 | RF_OUT_A | RF output of section A |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Mounting and soldering of RF transistors in overmolded plastic packages | Application note | 2025-02-03 | |
| Packages for RF power transistors | Leaflet | 2025-06-20 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2025-08-08 |
No documentation available.