Press release | Product news

Ampleon sets new industry benchmark with 1.6 kW-class GaN-SiC transistor for 600 MHz industrial and accelerator applications

Reference: APN100 | Date: June 2, 2026

 

Nijmegen The Netherlands, June 2, 2026 – Ampleon, a global frontrunner in high-performance RF power semiconductor solutions, has launched the CLF06H4LS1K5P, a next-generation 1.6 kW-class GaN-SiC HEMT transistor that redefines performance standards for solid-state RF energy systems. Engineered for mission-critical scenarios including industrial RF heating equipment and particle accelerators, the device delivers industry-leading output power, exceptional conversion efficiency and superior operational ruggedness, meeting stringent requirements for high-power density, stable continuous operation and long-term field reliability.

Modern industrial and accelerator RF systems are continuously evolving toward higher power output, yet system designers face persistent technical bottlenecks. Traditional RF power components often force unavoidable trade-offs between peak power density, thermal dissipation capability and operational robustness under variable real-world working conditions, restricting overall system performance and limiting equipment iteration and upgrading. Addressing this widespread industry pain point, the CLF06H4LS1K5P breaks conventional performance constraints by integrating ultra-high continuous RF power, outstanding power conversion efficiency and inherent anti-interference resilience, enabling developers to maximize system output performance without sacrificing operational stability and durability.

Operating at a standard 50 V supply voltage with 800 mA quiescent current, the CLF06H4LS1K5P delivers class-leading multi-scenario performance. The device achieves up to 1677 W pulsed-CW output power at 650 MHz, paired with 19 dB gain and 81% drain efficiency. For continuous-wave operation, it offers 18 dB gain, 80% drain efficiency and 1628 W output power at 650 MHz. Such superior comprehensive performance effectively boosts end-system power density and overall operational efficiency, helping industrial equipment manufacturers reduce operational energy consumption and maximize production throughput and economic benefits.

Designed for reliable large-scale field deployment, the CLF06H4LS1K5P features excellent thermal management and outstanding operational ruggedness. The device boasts an ultra-low thermal resistance of 0.13 K/W (infrared measurement) and 0.16 K/W (finite-element analysis), supporting sustained, stable high-power operation under long-duty-cycle working conditions. Furthermore, it withstands up to 10:1 VSWR full-load mismatch, delivering exceptional tolerance to signal reflections and transient voltage fluctuations prevalent in complex industrial environments, eliminating extra design risks and significantly enhancing overall system operational reliability.

The new GaN-SiC transistor also streamlines RF system design and accelerates product commercialization cycles. Built-in input pre-matching circuitry greatly reduces external RF matching complexity and peripheral component count, shortening product R&D iteration and time-to-market. Packaged in the qualified industrial-grade SOT539B ceramic package, the component features robust mechanical strength and premium thermal conductivity, fully adapting to high-duty-cycle, long-term continuous operating scenarios of industrial RF equipment. It enables engineering teams to complete design verification and mass deployment efficiently while guaranteeing consistent long-term system performance.

The Ampleon CLF06H4LS1K5P RF power transistor is now in full mass production and readily accessible via Ampleon’s global authorized distribution network. System integrators and equipment manufacturers can consult local Ampleon sales representatives or preferred distributors for detailed quotations, sample verification and bulk procurement services.

For more information, visit:

www.ampleon.com/pip/CLF06H4LS1K5P

+++Ends

For further information and reader inquiries:
Sean Zhou, Director of Product Marketing
Ampleon Netherlands B.V.
Halfgeleiderweg 8, 6534 AV Nijmegen, The Netherlands
Email: sean.zhou@ampleon.com,
www.ampleon.com

About Ampleon
Created in 2015 and headquartered in the Netherlands, Ampleon is shaped by nearly 60 years of RF power leadership. The company envisions to advance society through innovative RF solutions based on GaN and LDMOS technologies. Ampleon is dedicated to being the partner of choice by delivering high-quality, high-performance RF products with its world-class talent. The portfolio offers flexibility in scaling design and production for any volume and addresses applications for 4G LTE, 5G NR infrastructure, industrial, scientific, medical, broadcast, navigation and safety radio. Proven reliability, secure supply and excellent product consistency enable highest manufacturing yields for customers who benefit from Ampleon being a one-stop-partner for RF power solutions. For more details, please visit www.ampleon.com.