BLM10D2327-40AB
Download datasheetBLM10D2327-40AB
Download datasheetLDMOS 2-stage integrated Doherty MMIC
The BLM10D2327-40AB is a 2-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as a final stage for small cells and massive MIMO applications in the frequency range from 2500 MHz to 2700 MHz. Available in PQFN outline.
Features and benefits
- Integrated input splitter
- Integrated output combiner
- 20 Ω output impedance thanks to integrated pre-match
- Very high efficiency thanks to asymmetry
- Designed for wideband operation (frequency 2500 MHz to 2700 MHz)
- Independent control of carrier and peaking bias
- Integrated ESD protection
- Source impedance 50 Ω; high power gain
- For RoHS compliance see the product details on the Ampleon website
Applications
- RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA and LTE base stations in the 2500 MHz to 2700 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2500 | 2700 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 37 | W | |||
| Test signal: 8-c LTE 20 MHz (160 MHz) PAR = 8.5 dB | ||||||
| VDS | drain-source voltage | 8-carrier LTE 20 MHz (160 MHz) PAR = 8.5 dB [0] | 28 | V | ||
| Gp | power gain | 8-carrier LTE 20 MHz (160 MHz) PAR = 8.5 dB [0] | 28 | dB | ||
| ηD | drain efficiency | 8-carrier LTE 20 MHz (160 MHz) PAR = 8.5 dB [0] | 44 | % | ||
| PL(AV) | average output power | 8-carrier LTE 20 MHz (160 MHz) PAR = 8.5 dB [0] | 5.75 | W | ||
Package / Packing
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLM10D2327-40AB | PQFN20 (SOT1462-1) |
sot1462-1_po | Reel 7" Q1/T1 in Drypack | Active | Standard Marking |
BLM10D2327-40ABZ (9349 602 35515) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | VDS2 | drain-source voltage of final stages |
|
|
| 2 | n.c. | not connected | ||
| 3 | n.c. | not connected | ||
| 4 | VGS(carr) | gate-source voltage of carrier | ||
| 5 | VGS(peak) | gate-source voltage of peaking | ||
| 6 | VDS1 | drain-source voltage of driver stages | ||
| 7 | GND | RF ground | ||
| 8 | RF_IN | RF input | ||
| 9 | GND | RF ground | ||
| 10 | VDS1 | drain-source voltage of driver stages | ||
| 11 | VGS(peak) | gate-source voltage of peaking | ||
| 12 | VGS(carr) | gate-source voltage of carrier | ||
| 13 | n.c. | not connected | ||
| 14 | n.c. | not connected | ||
| 15 | n.c. | not connected | ||
| 16 | RF_OUT/VDS2 | RF output / drain-source voltage of final stages | ||
| 17 | RF_OUT/VDS2 | RF output / drain-source voltage of final stages | ||
| 18 | RF_OUT/VDS2 | RF output / drain-source voltage of final stages | ||
| 19 | RF_OUT/VDS2 | RF output / drain-source voltage of final stages | ||
| 20 | RF_OUT/VDS2 | RF output / drain-source voltage of final stages | ||
| flange | GND | RF ground |
Ordering & availability
| Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
|---|---|---|---|---|---|
| BLM10D2327-40AB | 9349 602 35515 | BLM10D2327-40ABZ | DigiKey | Buy | Request samples |
| RFMW | Buy |
Ordering & availability
| Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
|---|---|---|---|---|---|
| BLM10D2327-40AB | 9349 602 35515 | BLM10D2327-40ABZ | DigiKey | Buy | Request samples |
| RFMW | Buy |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Mounting and soldering of RF transistors in overmolded plastic packages | Application note | 2023-08-14 | |
| LDMOS 2-stage integrated Doherty MMIC | Data sheet | 2019-08-15 | |
| Mounting and Soldering of RF transistors in Air Cavity Packages | Application note | 2022-09-15 | |
| Packages for RF Power Transistors | Leaflet | 2024-03-25 | |
| LDMOS Ruggedness Reliability | Other type | 2017-03-28 | |
| Efficiency Improvement of LDMOS Transistors for Base Stations: Towards the Theoretical Limit | Other type | 2017-05-02 | |
| LDMOS Technology for RF Power Amplifiers | Other type | 2017-05-03 | |
| RF Power Solutions for Wireless Infrastructure | Brochure | 2024-04-04 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLM10D2327-40AB (Data sheet) | Design support | 2019-08-16 |