Nijmegen, The Netherlands, May 1, 2024 – Ampleon presents its newest 2500 W peak RF power transistors, powered by a 75 V supply. This marks a notable leap forward in the Advanced Rugged Transistors (ART) technology, setting a new standard for robustness and performance.

Nijmegen, The Netherlands, September 26, 2022 – Ampleon will showcase at the European Microwave Week (held in Milan between 27 thru 29 September) our latest solutions and innovative products in GaN and LDMOS technologies. Among the products on display will be ones aimed at wireless infrastructure, avionics/defence, non-cellular communication, cooking/ defrosting, and ISM-related applications.

Nijmegen, The Netherlands, June 17, 2022 – Ampleon is participating in the IEEE International Microwave Symposium (IMS), held in Denver, CO, USA and is introducing several new gallium nitride (GaN) and LDMOS solutions intended for use in wireless infrastructure, aerospace and defense, NCC (non-cellular communication), ISM (industrial, scientific and medical), cooking and defrosting applications.

Nijmegen, The Netherlands, February 24, 2022 – Ampleon, utilizing advanced LDMOS transistor technology, introduces the B11G3338N80D push-pull 3-stage fully integrated Doherty RF transistor being the carrier product for GEN11 Macro driver family covering all sub-6GHz frequency bands. This highly efficient multiband device covers a frequency range from 3.3 to 3.8GHz, enabling the implementation of next-generation high power and market-leading efficiency macro base stations.

荷蘭奈梅亨 – 埃賦隆半導體（Ampleon）利用先進的LDMOS電晶體技術，推出了B11G3338N80D推挽式3級全整合型Doherty射頻電晶體——該電晶體是GEN11 Macro驅動器系列的載體產品，涵蓋所有Sub-6GHz頻段。這種高效的多頻段器件覆蓋3.3至3.8GHz的頻率範圍，可實現下一代大功率和具有市場領先效率的大型基地台。

荷兰奈梅亨 – 埃赋隆半导体（Ampleon）利用先进的LDMOS晶体管技术，推出了B11G3338N80D推挽式3级全集成Doherty射频晶体管——该晶体管是GEN11 Macro驱动器系列的载体产品，涵盖所有6GHz以下频段。这种高效的多频段器件覆盖3.3至3.8GHz的频率范围，可实现下一代大功率和具有市场领先效率的宏基站。

Nijmegen, The Netherlands, February 22, 2022 – Ampleon today announced the release of two new broadband GaN-on-SiC HEMT transistors in the power classes of 30 Watts CLF3H0060(S)-30, 100 Watts CLF3H0035(S)-100. These high linearity devices are the initial products from our Generation 3 GaN-SiC HEMT process recently qualified and released to production.

荷蘭奈梅亨 – 埃賦隆半導體（Ampleon）今天宣佈推出兩款新型寬頻碳化矽基氮化鎵（GaN-on-SiC）高電子遷移率電晶體（HEMT），功率等級分別為30W的CLF3H0060(S)-30和100W的CLF3H0035(S)-100。這兩款高線性度器件是我們最近通過認證並投入生產的第3代GaN-SiC HEMT制程的首發產品。

荷兰奈梅亨 – 埃赋隆半导体（Ampleon）今天宣布推出两款新型宽带碳化硅基氮化镓（GaN-on-SiC）高电子迁移率晶体管（HEMT），功率等级分别为30W的CLF3H0060(S)-30和100W的CLF3H0035(S)-100。这两款高线性度器件是我们最近通过认证并投入生产的第3代GaN-SiC HEMT工艺的首发产品。

Nijmegen, The Netherlands, October 27, 2021 – Ampleon today announced the introduction of the BLC10G27XS-400AVT 400-Watt asymmetric Doherty RF power transistor. Designed for use in base station multi-carrier applications operating in the 2.496 GHz to 2.690 GHz frequency range, the -400AVT uses Ampleon's industry-respected 9th generation 28 V LDMOS process technology. Fabricated in an air cavity plastic (ACP) earless SOT-1258-4 package, the Doherty transistor typically delivers a drain efficiency of 45%.

荷蘭奈梅亨，2021年10月27日 - 埃賦隆半導體（Ampleon）今天宣佈推出BLC10G27XS-400AVT 400W非對稱Doherty射頻功率電晶體。此Doherty電晶體專為在2.496GHz至2.690GHz頻率範圍內工作的基地台多載波應用而設計，其採用了埃賦隆備受業界推崇的第9代28V LDMOS製程技術。該Doherty電晶體採用氣腔塑膠（ACP）無耳SOT-1258-4封裝製造，通常可提供45%的汲極效率。

荷兰奈梅亨，2021年10月27日 - 埃赋隆半导体（Ampleon）今天宣布推出BLC10G27XS-400AVT 400W非对称Doherty射频功率晶体管。此Doherty晶体管专为在2.496GHz至2.690GHz频率范围内工作的基站多载波应用而设计，其采用了埃赋隆备受业界推崇的第9代28V LDMOS工艺技术。该Doherty晶体管采用气腔塑料（ACP）无耳SOT-1258-4封装制造，通常可提供45%的漏极效率。

Nijmegen, The Netherlands, July 6, 2021 – Ampleon has further strengthened its portfolio of advanced yet cost-effective RF power amplifier solutions by announcing the availability of two new wideband amplifier series: the 32V-rated BLP15M9Sxxx and the 50V-rated BLP15H9Sxxx devices.

荷蘭奈梅亨 – 埃賦隆半導體（Ampleon）宣佈推出兩款新的寬頻放大器系列——額定電壓為32V的BLP15M9Sxxx器件和額定電壓為50V的BLP15H9Sxxx器件——據此進一步加強其先進而又高CP值的射頻功率放大器解決方案的產品組合。

荷兰奈梅亨 – 埃赋隆半导体（Ampleon）宣布推出两款新的宽带放大器系列——额定电压为32V的BLP15M9Sxxx器件和额定电压为50V的BLP15H9Sxxx器件， 從而进一步加强其先进而又高性价比的射频功率放大器解决方案的产品组合。

Nijmegen, The Netherlands, July 1, 2021 – Based on its advanced LDMOS transistor technology and leveraging high degrees of integration, Ampleon offers a comprehensive portfolio of RF power amplifier devices targeted at next generation small cell infrastructure and massive MIMO implementations.

荷蘭奈梅亨 – 埃賦隆半導體（Ampleon）基於其先進的LDMOS電晶體技術並利用高度集成，針對下一代小基站基礎設施和大規模MIMO實施提供了全面的射頻功率放大器器件組合。

荷兰奈梅亨 – 埃赋隆半导体（Ampleon）基于其先进的LDMOS晶体管技术并利用高度集成，针对下一代小基站基础设施和大规模MIMO实施提供了全面的射频功率放大器器件组合。

Nijmegen, The Netherlands, November 3, 2020 – Ampleon announced the BLP2425M10S250P, a 250W RF power transistor for solid-state cooking and industrial, scientific and medical (ISM) applications in the 2400MHz to 2500MHz frequency band.

荷蘭奈梅亨，2020年11月3日 – 埃賦隆半導體（Ampleon）現已發佈250W射頻功率電晶體BLP2425M10S250P。這款產品適用於2400MHz至2500MHz頻段的固態烹飪及工業、科學和醫療（ISM）應用。

荷兰奈梅亨，2020年11月3日 – 埃赋隆半导体（Ampleon）现已发布250W射频功率晶体管BLP2425M10S250P。这款产品适用于2400MHz至2500MHz频段的固态烹饪及工业、科学和医疗（ISM）应用。

Nijmegen, The Netherlands, October 28, 2020 – Ampleon announced the BLU9H0408L-800P 800-Watt RF power transistor. Using Ampleon’s latest Gen9 (50V) LDMOS process technology, the BLU9H0408L-800P has been specifically designed for use in high-power radar systems operating in the 400 MHz to 800 MHz UHF frequency band.

荷蘭奈梅亨，2020年10月28日 - 埃賦隆半導體（Ampleon）現已發佈BLU9H0408L-800P 800W射頻功率電晶體。它採用埃賦隆最新的第九代（Gen9）（50V）LDMOS製程技術，專門為工作在400MHz至800MHz超高頻（UHF）頻段的大功率雷達系統而設計。

荷兰奈梅亨，2020年10月28日 - 埃赋隆半导体（Ampleon）现已发布BLU9H0408L-800P 800W射频功率晶体管。它采用埃赋隆最新的第九代（Gen9）（50V）LDMOS工艺技术，专门为工作在400MHz至800MHz超高频（UHF）频段的大功率雷达系统而设计。

Nijmegen, The Netherlands, October 15, 2020 – Ampleon has released the BLF989E RF power transistor, which uses the very latest ninth-generation high-voltage (50V) LDMOS process technology. The BLF989E has been designed to deliver the highly efficient Doherty amplifiers required by the next generation of UHF TV transmitters.

荷蘭奈梅亨，2020年10月15日 – 埃賦隆半導體（Ampleon）現已發佈BLF989E射頻功率電晶體，這一電晶體採用了最新的第九代高壓（50V）LDMOS制程技術。BLF989E是針對用於下一代UHF電視發射機所需的高效Doherty放大器而設計的。

荷兰奈梅亨，2020年10月15日 – 埃赋隆半导体（Ampleon）现已发布BLF989E射频功率晶体管，这一晶体管采用了最新的第九代高压（50V）LDMOS工艺技术。BLF989E是针对用于下一代UHF电视发射机所需的高效Doherty放大器而设计的。

Nijmegen, The Netherlands, July 31, 2020 – Ampleon today announced their participation at the virtual International Microwave Symposium (IMS) that will be live-streaming from August 4th to August 6th, 2020. Comprising a virtual exhibition and a comprehensive series of technical presentations, industry workshops, and panel sessions, delegates can register at https://ims-ieee.org/.

Nijmegen, The Netherlands, July 6, 2020 – Ampleon today announced the BPF0910H9X600 pallet, a complete 600-Watt RF Power LDMOS module for industrial, scientific and medical applications operating in the 915MHz ISM frequency band.

荷蘭奈梅亨，2020年7月6日 - 埃賦隆半導體（Ampleon）今天宣佈推出BPF0910H9X600託盤放大器，這是一款完整的600W射頻功率LDMOS模組，適用於在915MHz ISM頻段工作的工業、科學和醫療應用。

荷兰奈梅亨，2020年7月6日 - 埃赋隆半导体（Ampleon）今天宣布推出BPF0910H9X600托盘放大器，这是一款完整的600W射频功率LDMOS模块，适用于在915MHz ISM频段工作的工业、科学和医疗应用。

Nijmegen, The Netherlands, July 2, 2020 – Ampleon today announced two additions to its 9th generation line-up of high-performance 50V Si LDMOS high-efficiency RF power transistors. Designed for use in ultra-high-power RF power amplifiers, capable of delivering hundreds of kilowatts, the BLF978P and the BLF974P are highly efficient and have high gain characteristics.

荷蘭奈梅亨，2020年7月2日 - 埃賦隆半導體（Ampleon）今天宣佈，在其第9代高效能50V Si LDMOS高效率射頻功率電晶體產品系列中新增兩款產品——BLF978P和BLF974P。這兩款產品專為超高功率射頻功率放大器而設計，可提供數百千瓦功率，並具有很高的效率和高增益特性。

荷兰奈梅亨，2020年7月02日 - 埃赋隆半导体（Ampleon）今天宣布，在其第9代高性能50V Si LDMOS高效率射频功率晶体管产品系列中新增两款产品——BLF978P和BLF974P。这两款产品专为超高功率射频功率放大器而设计，可提供数百千瓦功率，并具有很高的效率和高增益特性。

Nijmegen, The Netherlands, January 16, 2020 – Ampleon released the BLP05H9S500P LDMOS-based power amplifier transistor designed for use in industrial heating, defrosting, plasma lighting and medical applications.

荷蘭奈梅亨，2020年1月23日 – 埃賦隆半導體（Ampleon）現在面向工業加熱、除霜、電漿照明和醫療應用推出基於LDMOS的BLP05H9S500P功率放大器電晶體。

荷兰奈梅亨，2020年1月23日 – 埃赋隆半导体（Ampleon）现在面向工业加热、除霜、等离子照明和医疗应用推出基于LDMOS 的BLP05H9S500P功率放大器晶体管。

Nijmegen, The Netherlands, September 26, 2019 – Ampleon launches its new line of 12V laterally diffused metal oxide semiconductor (LDMOS) transistors and bolsters up its land mobile radio portfolio. This new 12V LDMOS platform is based upon the proven 9th generation of Ampleon’s LDMOS technology and will target commercial, public safety and defense mobile radio applications. The new 12V LDMOS portfolio will cover ceramic and plastic packages with a minimum longevity commitment of 15 years.

Nijmegen, Niederlande – Ampleon stellt eine neue Serie von LDMOS-Transistoren (Laterally Diffused Metal Oxide Semiconductor) vor und erweitert damit sein Angebot für den Mobilfunkbereich. Die neuen 12V-LDMOS-Bausteine basieren auf der bewährten neunten Generation der LDMOS-Technologie von Ampleon und zielen auf Mobilfunkanwendungen für die Bereiche Handel, öffentliche Sicherheit und Verteidigungstechnik ab. Die neue Serie wird in Keramik- und Kunststoffgehäusen mit einer Mindestlebensdauer von 15 Jahren ausgeliefert.

荷蘭奈梅亨 – 埃賦隆半導體（Ampleon）發布了最新的12V橫向擴散金屬氧化物半導體（LDMOS）晶體管產品線，加強其地面移動電臺業務。這壹新的12V LDMOS平臺基於埃賦隆已驗證的第9代LDMOS技術，其應用範圍包括商業、公共安全和國防移動無線電應用。新的12V LDMOS產品包括陶瓷和塑料封裝，並且承諾的最短生產年限是15年。

荷兰奈梅亨 – 埃赋隆半导体（Ampleon）发布了最新的12V横向扩散金属氧化物半导体（LDMOS）晶体管产品线，加强其地面移动电台业务。这一新的12V LDMOS平台基于埃赋隆已验证的第9代LDMOS技术，其应用范围包括商业、公共安全和国防移动无线电应用。新的12V LDMOS产品包括陶瓷和塑料封装，并且承诺的最短生产年限是15年。

Nijmegen, The Netherlands, September 23, 2019 – Ampleon, the leading supplier of RF power devices, today announced a significant presence at European Microwave Week 2019. During the show and conference they will participate in the exhibition, present several technical papers and sponsor the European Microwave Student Design Competition Thrust 2 “Wideband Power Amplifier Biasing Network Design” element.

Nijmegen, The Netherlands, May 29, 2019 – Ampleon today announced it will participate in the IEEE International Microwave Symposium (IMS) held in Boston, Massachusetts, USA to introduce its wide variety of new LDMOS and GaN solutions targeting telecom, aerospace and defense, NCC, ISM, cooking and defrosting applications.

Nijmegen, The Netherlands, May 8, 2019 – Ampleon has released the first of a family of RF power devices based upon its Advanced Rugged Technology (ART) derivative of the proven 9th generation high voltage LDMOS process technology. The process has been developed to enable the implementation of extremely rugged transistors with operating voltages of up to 65V.

Nijmegen, Niederlande – 8. Mai 2019 – Ampleon stellt den ersten Baustein einer Serie von HF-Leistungsbauelementen vor, der auf der ART-Variante (Advanced Rugged Technology) seiner High-Voltage-LDMOS-Prozesstechnologie der 9. Generation basiert. Das Verfahren wurde entwickelt, um hochrobuste Transistoren mit Betriebsspannungen von bis zu 65 V zu ermöglichen.

Nijmegen, Paesi Bassi – 8 Maggio 2019 – Ampleon ha annunciato il rilascio del primo membro di una nuova famiglia di dispositivi di potenza RF realizzati sfruttando la tecnologia ART (Adanced Rugged Technology), una variante del collaudato processo LDMOS ad alta tensione di 9a generazione sviluppato dalla società. Il processo è stato messo a punto per consentire la realizzazione di transistor estremamente affidabili e robusti con tensioni di funzionamento fino a 65 V.

荷蘭奈梅亨 – 2019年5月8日，埃賦隆半導體（Ampleon）現在宣佈基於其成熟的第9代高壓LDMOS制程技術派生出先進加固技術（Advanced Rugged Technology，ART），並借此開發出新系列射頻功率器件中的首款產品。這個新制程的開發旨在用於實現極其堅固的、工作電壓高達65V的電晶體。

荷兰奈梅亨 – 2019年5月8日，埃赋隆半导体（Ampleon）现在宣布基于其成熟的第9代高压LDMOS工艺技术派生出高级加固技术（Advanced Rugged Technology，ART），并借此开发出新系列射频功率器件中的首款产品。这个新工艺的开发旨在用于实现极其坚固的、工作电压高达65V的晶体管。

Nijmegen, The Netherlands, April 8, 2019 – Ampleon today announced a high-efficiency 750W RF power transistor. The BLF0910H9LS750P has a best-in-class efficiency of 72.5% at 915MHz and a rugged design that makes it ideal for industrial and professional RF energy applications.

Nijmegen, Niederlande – Ampleon stellt mit dem BLF0910H9LS750P einen hocheffizienten 750 W-HF-Leistungstransistor vor, der einen erstklassigen Wirkungsgrad von 72,5 % bei 915 MHz und ein robustes Design bietet, das ihn ideal für industrielle und professionelle HF-Leistungselektronik macht.

Nijmegen, Paesi Bassi – Ampleon ha annunciato l'introduzione di un transistor di potenza RF da 750 W ad alta efficienza. Caratterizzato da un'efficienza pari al 72,5% a 915 MHz, la migliore nella sua categoria, il nuovo dispositivo si distingue per un design particolarmente robusto che ne fa la soluzione ideale per tutte quelle applicazioni nei settori industriale e consumer che utilizzano l'energia RF.

荷蘭奈梅亨 – 埃賦隆半導體（Ampleon）今天宣佈推出一款高效率750W射頻功率電晶體BLF0910H9LS750P。它在915MHz時效率為72.5%，為同類最佳，其堅固耐用型設計也使其成為了工業和專業射頻能源應用的理想選擇。

荷兰奈梅亨 – 埃赋隆半导体（Ampleon）今天宣布推出一款高效率750W射频功率晶体管BLF0910H9LS750P。它在915MHz时效率为72.5%，为同类最佳，其坚固耐用型设计也使其成为了工业和专业射频能源应用的理想选择。

オランダ、ナイメーヘン - アンプレオン(以下: Ampleon)は本日、750Wの高効率RFパワートランジスタを発表しました。BLF0910H9LS750Pは、産業用および業務用RFエネルギーアプリケーションに最適な、915MHzで72.5％というクラス最高の効率と、堅牢な設計を備えています。

Nijmegen, The Netherlands, January 16, 2019 – Ampleon today announced the 500-Watt BLC2425M10LS500P LDMOS RF power transistor designed for pulsed and CW applications operating in the 2400 MHz to 2500 MHz frequency range. Suitable for use in a wide range of industrial, consumer and professional cooking RF energy applications, the BLC2425M10LS500P has an excellent high-power to footprint ratio as it delivers 500-Watt CW from a single SOT1250 air cavity plastic package.

Nijmegen, Niederlande – Ampleon stellt den 500W-LDMOS-HF-Transistor BLC2425M10LS500P für Impuls- und Dauer-/CW-Anwendungen im Frequenzbereich von 2400 bis 2500 MHz vor. Er eignet sich für den Einsatz in verschiedenen HF-Energieanwendungen für die Bereiche Industrie, Consumer und professionelles Kochen. Der Transistor bietet ein hervorragendes Verhältnis zwischen hoher Leistungsfähigkeit und Platzbedarf, da er 500 W CW-Leistung aus einem einzigen SOT1250-Kunststoffgehäuse (air-cavity) bereitstellt.

Nijmegen, Paesi Bassi – Ampleon ha annunciato l'introduzione di un transistor di potenza RF da 500 Watt realizzato in tecnologia LDMOS espressamente ideato per applicazioni che operano in modalità continua (CW - Continuous Wave) e impulsata nel range di frequenza compreso tra 2.400 e 2.500 MHz. Adatto all'uso in un'ampia gamma di applicazioni che utilizzano l'energia RF nei settori industriali, consumer e delle attrezzature per cucine professionali, il nuovo BLC2425M10LS500P si caratterizza per l'ottimo rapporto tra ingombri e potenza: il dispositivo è in grado di erogare 500 W CW pur essendo ospitato in un package plastico SOT1250 di tipo ACP (Air Cavity Plastic).

荷兰奈梅亨 – 埃赋隆半导体（Ampleon）今天宣布，面向工作在2400MHz至2500MHz频率范围内的脉冲和连续波（CW）应用，推出500W的BLC2425M10LS500P LDMOS射频功率晶体管。BLC2425M10LS500P适用于各种工业、消费和专业烹饪射频能量应用；由于它可以通过单个SOT1250空腔塑料封装提供500W的CW，因此具有非常高的功率与封装比。

Nijmegen, The Netherlands, November 5, 2018 – Ampleon today announced the compact dual-stage 250 Watt LDMOS RF power module BPC2425M9X2S250-1. Designed for high power continuous wave (CW) industrial, scientific and medical (ISM) applications operating in the 2,400 MHz to 2,500 MHz frequency band, the high efficiency module measures 72 mm x 34 mm and incorporates a temperature sensor to facilitate the monitoring and control of its temperature, state-of-art multilayer board with integrated heat spreader and best in class LDMOS technology. The module also has a 50 Ohm matched input and output, which simplifies the design-in process by removing the need for any tuning or additional matching components.

Nijmegen, Niederlande, 5 November 2018 – Ampleon stellt das kompakte zweistufige 250W-LDMOS-HF-Leistungsmodul BPC2425M9X2S250-1 vor. Das hocheffiziente Modul wurde für industrielle, wissenschaftliche und medizinische (ISM) Hochleistungsanwendungen im CW-Betrieb (Continuous Wave) entwickelt, die im Frequenzband von 2400 bis 2500 MHz arbeiten. Das Modul misst 72 mm x 34 mm und bietet einen Temperatursensor zur Überwachung und Steuerung seiner Temperatur, eine hochmoderne Multilayer-Platine mit integriertem Wärmeverteiler und führende LDMOS-Technologie. Es verfügt außerdem über einen angepassten 50Ω-Eingang und Ausgang, der das Design-In vereinfacht, da keine Abstimmung oder zusätzliche Anpassungsbauelemente erforderlich sind.

Nijmegen, Paesi Bassi, 5 Novembre 2018 – Ampleon ha annunciato l'introduzione di un modulo di potenza RF da 250 W a doppio stadio in tecnologia LDMOS. Il nuovo BPC2425M9X2S250-1, progettato per applicazioni che richiedono un'elevata potenza continua (CW - Continuous Wave) operanti nella banda ISM (Industrial, Scientific and Medical) compresa tra 2.400 e 2.500 MHz, è un modulo ad alta efficienza di dimensioni pari a 72 x 34 mm che integra un sensore di temperatura per semplificare il monitoraggio e il controllo della sua temperatura e una scheda multistrato all'avanguardia con dissipatore di calore incorporato. Realizzato sfruttando un'avanzata tecnologia LDMOS, il modulo prevede l'adattamento a 50 Ohm tra ingresso e uscita per semplificare il processo di integrazione, eliminando la necessità di ulteriori regolazioni o l'aggiunta di componenti esterni per l'adattamento.

荷蘭奈梅亨 – 2018年11月6日 – 埃賦隆半導體（Ampleon）今天宣佈推出小尺寸雙級250W LDMOS射頻功率模組BPC2425M9X2S250-1。 該高效率模組專為工作在2,400MHz至2,500MHz頻段的大功率連續波（CW）工業、科學和醫療（ISM）應用而設計，尺寸為72mm×34mm，並整合了溫度感測器（可簡化其溫度的監控）、內建散熱器的最先進的多層板，以及一流的LDMOS技術。 該模組輸入和輸出之間還具有50Ω匹配電阻，不需要使用任何調諧或其他匹配元件，因此簡化了設計過程。

荷兰奈梅亨 – 2018年11月6日 – 埃赋隆半导体（Ampleon）今天宣布推出小尺寸双级250W LDMOS射频功率模块BPC2425M9X2S250-1。 该高效率模块专为工作在2,400MHz至2,500MHz频段的大功率连续波（CW）工业、科学和医疗（ISM）应用而设计，尺寸为72mm×34mm，并包含了温度传感器（可简化其温度的监控）、集成有散热器的最先进的多层板，以及一流的LDMOS技术。 该模块输入和输出之间还具有50Ω匹配电阻，不需要使用任何调谐或其他匹配元件，因此简化了设计过程。

Nijmegen, The Netherlands, October 30, 2018 – Ampleon today announced it recently secured a refinancing package. Led by global coordinator HSBC, and syndicated by five West European banks, the USD 400 million senior credit facilities, a proportion of which includes a revolving credit facility, was agreed on October 5, 2018. The proceeds of this new financing structure will be used to repay existing debt and to provide liquidity to support future growth and strategic objectives. The refinancing is fully supported by Ampleon shareholders who are managed by JAC Capital.

荷蘭奈梅亨 - 2018年10月31日，埃賦隆半導體（Ampleon）今天宣佈其最近獲得了再融資方案。在全球協調者滙豐銀行（HSBC）的帶領下，2018年10月5日，五家西歐銀行聯合商定了4億美元的優先信貸額度，其中一部分包括迴圈信貸額度。這筆新融資將用於償還現有債務，並提供流動資金以支援未來的增長和戰略目標。由北京建廣資產管理有限公司（JAC Capital）管理的Ampleon的股東完全支持這筆再融資。

荷兰奈梅亨 - 2018年10月31日，埃赋隆半导体（Ampleon）今天宣布其最近获得了再融资方案。在全球协调者汇丰银行（HSBC）的带领下，2018年10月5日，五家西欧银行联合商定了4亿美元的优先信贷额度，其中一部分包含循环信贷额度。这笔新融资将用于偿还现有债务，并提供流动资金以支持未来的增长和战略目标。由北京建广资产管理有限公司（JAC Capital）管理的Ampleon的股东完全支持这笔再融资。

Nijmegen, The Netherlands, September 25, 2018 – Ampleon today announced the BLF13H9L750P, a 750 Watt Gen9HV LDMOS RF power transistor designed specifically for use in particle accelerator applications operating in the 1.3 GHz spectrum. Constructed in a ceramic 4-lead SOT539 format and available both in a flanged bolt down package (BLF13H9L750P) and a flanged earless package (BLF13H9LS750P), the transistor delivers what is believed to be the highest efficiency available in its class of better than 62%. With such a high operating efficiency specification, the transistor helps to deliver significant power savings compared to other solid state competitor devices. In addition, when compared to older klystron and valve-based equipment, a solid state approach requires considerably less maintenance, has a longer life cycle and requires less physical space, further contributing to lower operating costs.

荷蘭奈梅亨 - 埃賦隆半導體（Ampleon）今天宣佈推出一款750W的Gen9HV LDMOS RF功率電晶體BLF13H9L750P，專門設計用於運作在1.3GHz頻譜的粒子加速器應用。該電晶體採用陶瓷4引腳SOT539形式並採用法蘭螺栓固定封裝（BLF13H9L750P）和法蘭無耳封裝（BLF13H9LS750P），可提供優於62%、據信是同類產品中最高的效率。憑藉如此高的工作效率規格，該電晶體與其他固態競爭器件相比，將有助於實現顯著的功耗節省。此外，與基於速調管（klystron）和真空管放大器的老式裝置相比，固態方法所需的維護會少很多，生命週期更長並且所需的物理空間更少，因此可進一步降低運營成本。

荷兰奈梅亨 - 埃赋隆半导体（Ampleon）今天宣布推出一款750W的Gen9HV LDMOS RF功率晶体管BLF13H9L750P，专门设计用于工作在1.3GHz频谱的粒子加速器应用。该晶体管采用陶瓷4引脚SOT539形式并采用法兰螺栓固定封装（BLF13H9L750P）和法兰无耳封装（BLF13H9LS750P），可提供优于62%、据信是同类产品中最高的效率。凭借如此高的工作效率规格，该晶体管与其他固态竞争器件相比，将有助于实现显著的功耗节省。此外，与基于速调管和真空管放大器的老式设备相比，固态方法所需的维护会少很多，生命周期更长并且所需的物理空间更少，因此可进一步降低运营成本。

Nijmegen, The Netherlands, September 24, 2018 – Ampleon today announced the high power rugged BLF189XRA RF power transistor aimed at broadcast FM radio applications transmitting in the 88 – 108 MHz frequency range.

荷蘭奈梅亨 - 埃賦隆半導體（Ampleon）今天宣佈推出大功率堅固型BLF189XRA RF功率電晶體，用於88-108MHz頻率範圍內的廣播FM無線電應用。

荷兰奈梅亨 - 埃赋隆半导体（Ampleon）今天宣布推出大功率坚固型BLF189XRA RF功率晶体管，用于88-108MHz频率范围内的广播FM无线电应用。

Nijmegen, The Netherlands, August 22, 2018 – Ampleon today announced it will participate in the exhibition at European Microwave Week (EuMW) 2018 and present papers at various technical sessions. The company will support the popular Student School during the event by providing a platform to share innovation in the field of high-power semiconductors using Ampleon devices. It will also sponsor the student design competition under the supervision of Ampleon’s most senior professionals.

Nijmegen, The Netherlands, July 18, 2018 – Ampleon today announced an addition to its line-up of high power LDMOS RF transistors suitable for use in continuous wave (CW) RF energy applications. The BLC2425M10LS250 power transistor is highly efficient, achieving up to 69 % efficiency and is capable of providing up to 250 Watts output power in the 2,400 to 2,500 MHz frequency range. Its high efficiency, believed to be best in class for an LDMOS device operating in this frequency range, helps keep the need for cooling to a minimum while also lowering the energy costs of operation.

荷蘭奈梅亨 – 2018年7月18日，埃賦隆半導體（Ampleon）今天宣佈向其適用於連續波（CW）射頻能量應用的大功率LDMOS射頻電晶體產品陣容中新增一款產品。BLC2425M10LS250功率電晶體效率高達69%，能夠在2,400至2,500MHz頻率範圍內提供高達250W的輸出功率。據信，對於運作在此頻率範圍內的LDMOS器件來說，其高效率為同類最佳，有助於將冷卻需求降至最低，同時還可降低運作的能源成本。

荷兰奈梅亨 – 2018年7月18日，埃赋隆半导体（Ampleon）今天宣布向其适用于连续波（CW）射频能量应用的大功率LDMOS射频晶体管产品阵容中新增一款产品。BLC2425M10LS250功率晶体管效率高达69%，能够在2,400至2,500MHz频率范围内提供高达250W的输出功率。据信，对于工作在此频率范围内的LDMOS器件来说，其高效率为同类最佳，有助于将冷却需求降至最低，同时还可降低工作的能源成本。

Nijmegen, The Netherlands, June 6, 2018 – Ampleon today announced the introduction of its BLF989 RF power transistor designed for UHF broadcast applications such as DVBT and UHF analog TV. Using Ampleon’s latest Gen9HV high voltage LDMOS process, this 140 Watt (average – 700 Watt peak) transistor, the first broadcast device to use this process technology, offers a high operating efficiency of typically > 34% (Class AB) and is available in a ceramic SOT539 package format either with or without mounting ears.

2018年6月6日荷蘭奈梅亨 – 埃賦隆半導體（Ampleon）今天宣佈推出專為諸如數位視訊廣播（DVBT）和特高頻（UHF）類比電視等UHF廣播應用設計的BLF989射頻（RF）功率電晶體。這款140W（平均值——峰值為700W）的電晶體採用埃賦隆最新的Gen9HV高壓LDMOS（橫向擴散金屬氧化物半導體）制程，是採用該制程技術的首款廣播器件。該器件通常具有＞34%的高工作效率（AB類），並且採用陶瓷SOT539封裝形式，安裝吊耳可有可無。

2018年6月6日荷兰奈梅亨 – 埃赋隆半导体（Ampleon）今天宣布推出专为诸如数字视频广播（DVBT）和特高频（UHF）模拟电视等UHF广播应用设计的BLF989射频（RF）功率晶体管。这款140W（平均值——峰值为700W）的晶体管采用埃赋隆最新的Gen9HV高压LDMOS（横向扩散金属氧化物半导体）工艺，是采用该工艺技术的首款广播器件。该器件通常具有＞34%的高工作效率（AB类），并且采用陶瓷SOT539封装形式，安装吊耳可有可无。

Nijmegen, The Netherlands, May 9, 2018 – Ampleon today announced details of its participation at the forthcoming IEEE MTT International Microwave Symposium (IMS) held in Philadelphia, Pennsylvania, USA.

荷蘭奈梅亨，2018年5月9日 – 埃賦隆半導體（Ampleon）今天宣佈其參加即將在美國賓夕法尼亞州費城舉辦的IEEE MTT國際微波研討會（IMS）的細節。

荷兰奈梅亨，2018年5月9日 – 埃赋隆半导体（Ampleon）今天宣布其参加即将在美国宾夕法尼亚州费城举办的IEEE MTT国际微波研讨会（IMS）的细节。

Nijmegen, The Netherlands, May 8, 2018 – Ampleon has today issued an update to its December 2017 announcement regarding the transfer of shares to a new shareholder, Aurora Optoelectronics Co. Limited (Aurora). Aurora has informed us it is currently not in a position to proceed towards its intended goal of acquiring a majority shareholding in Ampleon.

荷蘭奈梅亨 – 埃賦隆半導體（Ampleon）今天發佈了其2017年12月關於將股票轉讓給新股東——奧瑞德光電股份有限公司（Aurora）的公告的更新。Aurora已通知我們，其目前無法實現收購Ampleon大部分股權的預期目標。

荷兰奈梅亨 – 埃赋隆半导体（Ampleon）今天发布了其2017年12月关于将股票转让给新股东——奥瑞德光电股份有限公司（Aurora）的公告的更新。Aurora已通知我们，其目前无法实现收购Ampleon大部分股权的预期目标。

Nijmegen, The Netherlands, April 11, 2018 – Ampleon today announced the 200 Watt BPC10M6X2S200 LDMOS-based power amplifier module suitable for use in a variety of plasma lighting, industrial heating, medical and RF cooking and defrosting applications. Operating in the 423 MHz to 443 MHz frequency range, this compact light weigh pallet measures just 125 x 33 mm weighs 85 g and can operate in pulsed or continuous wave modes. It has a matched 50 Ohm input and output, this making the integration process simpler and eliminates the need for any additional matching components, saving both space and costs. The amplifier also benefits from excellent ruggedness credentials and is capable of withstanding a VSWR of 10:1 for a short duration.

荷蘭奈梅亨 – 2018年4月11日，埃賦隆半導體（Ampleon）今天宣佈推出基於200W BPC10M6X2S200 LDMOS的功率放大器模組——該模組適用於各種電漿照明、工業加熱、醫療、射頻烹飪和除霜應用。這款小巧輕便的pallet，其工作頻率範圍為423MHz至443MHz，尺寸僅為125mm×33mm，重量為85g，並可在脈衝波和連續波模式下工作。它具有50Ω的輸入和輸出匹配，這使得整合過程更加簡單，並且不需要任何額外的匹配零組件，因而也能夠節省空間和成本。得益於該放大器出色的耐用性，模組可以在短時間內承受10:1的電壓駐波比（VSWR）。

荷兰奈梅亨 – 2018年4月11日，埃赋隆半导体（Ampleon）今天宣布推出基于200W BPC10M6X2S200 LDMOS的功率放大器模块——该模块适用于各种等离子照明、工业加热、医疗、射频烹饪和解冻应用。这款小巧轻便的pallet，其工作频率范围为423MHz至443MHz，尺寸仅为125mm×33mm，重量为85g，并可在脉冲波和连续波模式下工作。它具有50Ω的输入和输出匹配，这使得集成过程更加简单，并且不需要任何额外的匹配元件，因而也能够节省空间和成本。得益于该放大器出色的耐用性，模块可以在短时间内承受10:1的电压驻波比（VSWR）。

Nijmegen, The Netherlands, April 4, 2018 – Ampleon today announced the BLP25RFE001, a small signal generator IC providing a programmable frequency synthesizer able to generate a signal in the 433, 915 and 2,400 MHz ISM bands. This device is designed in particular for a variety of RF energy applications such as industrial heating, defrosting and/or cooking and plasma lighting.

荷蘭奈梅亨 – 2018年4月4日，埃賦隆半導體（Ampleon）今天宣佈推出BLP25RFE001小訊號產生器IC——它提供一個可程式頻率合成器，可產生位於433、915和2,400MHz ISM頻段內的訊號。該器件特別設計用於各種射頻能量應用，例如工業加熱、解凍和烹飪以及電漿照明。

荷兰奈梅亨 – 2018年4月4日，埃赋隆半导体（Ampleon）今天宣布推出BLP25RFE001小信号发生器IC——它提供一个可编程频率合成器，可产生位于433、915和2,400MHz ISM频段内的信号。该器件特别设计用于各种射频能量应用，例如工业加热、解冻和烹饪以及等离子照明。

Nijmegen, The Netherlands, March 7, 2018 – Ampleon today announced details of its participation at the Electronic Design Innovation Conference ‘EDI CON’ held in Beijing, China during March 20 to March 22. The Ampleon booth, number 630, can be found on the 4th floor of the China National Convention Center, and will host a range of popular products and demonstrations. These include solutions for particle accelerators, Doherty broadcast transmitters, and wireless base stations. LDMOS-based products will also be on display, including high power devices for FM broadcast applications, extremely rugged solutions for laser and plasma generation, and devices for avionics and RADAR systems. Devices and pallets for use in RF Energy applications will also be on the booth.

荷蘭奈梅亨 – 埃賦隆半導體（Ampleon）今天宣佈其參加3月20日至3月22日在中國北京舉行的電子設計創新大會（EDI CON）的詳細資訊。埃賦隆半導體所在的630號展位，位於中國國家會議中心的4樓，將會佈置一系列的熱門產品和演示。其中包括面向粒子加速器、Doherty廣播發射機和無線基地台的解決方案。該公司還將展示基於LDMOS的產品，包括面向FM廣播應用的大功率元件、面向鐳射和等離子體生成的極其堅固耐用的解決方案，以及面向航空電子和雷達系統的元件。此外，面向射頻能量應用的元件和pallet也將在展位上展示。

荷兰奈梅亨 – 埃赋隆半导体（Ampleon）今天宣布其参加3月20日至3月22日在中国北京举行的电子设计创新大会（EDI CON）的详细信息。埃赋隆半导体所在的630号展台，位于中国国家会议中心的4楼，将会布置一系列的热门产品和演示。其中包括面向粒子加速器、Doherty广播发射机和无线基站的解决方案。该公司还将展示基于LDMOS的产品，包括面向FM广播应用的大功率器件、面向激光和等离子体生成的极其坚固耐用的解决方案，以及面向航空电子和雷达系统的器件。此外，面向射频能量应用的器件和pallet也将在展台上展示。

Nijmegen, The Netherlands, February 8, 2018 – Ampleon announced today the launch of the 600 Watt BLF0910H9LS600 LDMOS power amplifier transistor. This is the first RF energy transistor using Ampleon’s latest Gen9HV 50 V LDMOS process, a node that has been optimized to deliver greatly increased efficiency, power and gain. It is designed for use in industrial heating continuous wave (CW) RF energy applications in the 900 to 930 MHz ISM band. Fabricated in a compact ceramic SOT502 package, the transistor combines a high output power with best in class operating efficiency within a small footprint. This reduces the space required, and thereby the cost of amplifier designs.

荷蘭奈梅亨 – 2018年2月8日，安譜隆半導體（Ampleon）今天宣佈，推出600W的BLF0910H9LS600 LDMOS功率放大器電晶體。這是第一款採用安譜隆最新Gen9HV 50V LDMOS制程的射頻能量電晶體——該節點已為大幅提高效率、功率和增益做了優化。它設計用於900至930MHz ISM頻段中的工業加熱連續波（CW）射頻能量應用。該電晶體採用小型陶瓷SOT502封裝，結合了大輸出功率和以小尺寸提供同類最佳工作效率的優勢。此舉減少了所需的空間，從而降低了放大器設計的成本。

荷兰奈梅亨 – 2018年2月8日，安谱隆半导体（Ampleon）今天宣布，推出600W的BLF0910H9LS600 LDMOS功率放大器晶体管。这是第一款采用安谱隆最新Gen9HV 50V LDMOS工艺的射频能量晶体管——该节点已为大幅提高效率、功率和增益做了优化。它设计用于900到930MHz ISM频段中的工业加热连续波（CW）射频能量应用。该晶体管采用小型陶瓷SOT502封装，结合了大输出功率和以小尺寸提供同类最佳工作效率的优势。此举减少了所需的空间，从而降低了放大器设计的成本。

Nijmegen, The Netherlands, December 4, 2017 – Ampleon today said that it wished to clarify the current situation brought about by the recent announcement of a major shareholder. A transfer of shares to a new shareholder, Aurora Optoelectronics Co. Ltd., is currently going through the usual financial formalities and, subject to approval, is expected to be finalized in the middle of 2018. Jianguang Asset Management Co. Ltd (JAC) is currently managing the shareholders and will continue to do so.

荷兰奈梅亨 – 安谱隆半导体（Ampleon）今天表示，希望对最近宣布的一家大股东所带来的现状进行澄清。对新股东奥瑞德光电股份有限公司的股权转让，目前正在履行正常的财务手续，待批准后，预计将于2018年中期完成。北京建广资产管理有限公司（JAC）目前正在管理所有股东，并将继续进行管理。

荷蘭奈梅亨 – 安譜隆半導體（Ampleon）今天表示，希望對最近宣佈的一家大股東所帶來的現狀進行澄清。對新股東奧瑞德光電股份有限公司的股權轉讓，目前正在履行正常的財務手續，待批准後，預計將於2018年中期完成。北京建廣資產管理有限公司（JAC）目前正在管理所有股東，並將繼續進行管理。

Nijmegen, The Netherlands, September 25, 2017 – Ampleon, the leading supplier of RF power devices, today announced it will be exhibiting at European Microwave Week 2017 and will present technical papers in various sessions.

Nijmegen, Niederlande, 25. September 2017 – Ampleon, führender Anbieter von HF-Leistungselektronik, wird auf der European Microwave Week 2017 ausstellen und verschiedene Vorträge halten.

International Microwave Symposium, Hawaii and Nijmegen, The Netherlands, June 7, 2017 – Ampleon today announced the launch of a multi-purpose 20 Watt single-stage RF power amplifier driver transistor. The BLP9G0722-20G is a cost-effective 28 V LDMOS device that targets a wide range of applications from 0.4 to 2.7 GHz.

美國夏威夷國際微波研討會（IMS）和荷蘭奈梅亨 - 安譜隆半導體（Ampleon）今天宣佈推出一款多功能20W單級射頻功率放大器驅動器電晶體。BLP9G0722-20G是一款高性價比的28V LDMOS元件，適用於0.4至2.7GHz的廣泛應用。

美国夏威夷国际微波研讨会（IMS）和荷兰奈梅亨 - 安谱隆半导体（Ampleon）今天宣布推出一款多功能20W单级射频功率放大器驱动器晶体管。BLP9G0722-20G是一款高性价比的28V LDMOS器件，适用于0.4至2.7GHz的广泛应用。

International Microwave Symposium, Hawaii and Nijmegen, The Netherlands, June 6, 2017 – Ampleon today announced the launch of a series of LDMOS RF power transistors using its Gen9HV 50 V LDMOS process. These devices are the first to use Ampleon’s latest 50 V process, a node that has been optimized for use in cellular infrastructure applications up to 1 GHz and delivers greatly increased efficiency and gain. These devices, enabling more than 57 % efficiency and 18 dB power gain, and their 50 V operation, make for a significantly more compact and cost-effective application.

Nijmegen, The Netherlands, May 23, 2017 – Ampleon today announced the Gen10 series of LDMOS RF power transistors that deliver a record efficiency of 52 % and 18 dB of gain (at 1.8 GHz) in wireless infrastructure power amplifiers. Specifically designed to meet the demands of the cellular industry for more power efficient base station designs, the Gen10 family reduces power consumption, shrinks the size and weight of the power amplifier, and lowers the operating temperature of infrastructure equipment.

Nijmegen, The Netherlands, May 10, 2017 – Ampleon today announced its participation at the forthcoming International Microwave Symposium, IMS.

荷兰奈梅亨市，2017年5月16日 – 安谱隆半导体（Ampleon）今天宣布参加即将举行的国际微波研讨会（IMS）。

荷蘭奈梅亨市，2017年5月16日 – 安譜隆半導體（Ampleon）今天宣佈參加即將舉行的國際微波研討會（IMS）。

Nijmegen, The Netherlands, April 12, 2017 – Ampleon today announced its participation at the forthcoming Electronic Design Innovation Conference (EDI CON) held in Shanghai, China April 25 – 27, 2017.

荷蘭奈梅亨，2017年4月11日 – 安譜隆半導(Ampleon）今日宣佈，該公司即將參加將於2017年4月25日至27日在中國上海舉行的電子設計創新大會（EDI CON）。 Ampleon將於243號展位展示其最新的、適用於移動寬頻、廣播、工業、雷達和航空電子裝置以及RF能量應用的RF放大器器件和模組。產品演示包括400W S波段託盤、900W UHF廣播設計和2,000W 127MHz ISM頻帶示例。此外，集成有面向射頻能量應用之傳感功能的433MHz、200W託盤也將進行展示。

荷兰奈梅亨，2017年4月11日 – 安谱隆半导体（Ampleon）今日宣布，该公司即将参加将于2017年4月25日至27日在中国上海举行的电子设计创新大会（EDI CON）。

Nijmegen, The Netherlands and Hefei, People’s Republic of China – October 20, 2016 – Ampleon today announced the opening of its RF Energy Competence Center in Hefei, PRC. The company is recognized as a leader in the RF Energy market and continues to invest in the emerging use of this technology. While RF energy covers a broad range of applications (Domestic and Professional Cooking, Heating and Drying, Ignition and Lighting), the new competence center’s current focus is on solid state cooking.

荷兰奈梅亨 – 2016年10月20日 – Ampleon宣布在合肥开设射频(RF)能源卓越中心。Ampleon公司是业界公认RF能源市场领导企业，并且在此项技术的新兴应用领域继续投资。RF能源技术覆盖范围广泛的各种应用，比如家庭和专业烹饪、加热和干燥、点火和照明，而新设卓越中心目前重点关注固态烹饪。

荷蘭奈梅亨 ─ 二○一六年十月20日 ─ Ampleon公司宣佈在中國安徽省合肥市開設射頻 (RF)能源技能中心。Ampleon公司是RF能源市場上獲得公認的領先廠商，並持續投資於這項技術的新興應用。RF能源涵蓋廣泛的應用，例如家庭和專業烹調、加熱和乾燥、點火和照明，而新開設的技能中心目前則重於固態烹調。

Nijmegen, The Netherlands, October 4, 2016 – Ampleon today announced the availability of a complete line-up of RF power transistors and pallets based on the latest Gen 9 LDMOS process technology. Available power levels include 50 watts drivers up to 400 watts finals. Aimed at a broad range of S band radar for pulsed RF applications, the enhanced power density attributes of Gen 9 meet the specific needs of the aerospace and defense industry for size, weight, power, plus cost and reliability or SWaP – CR.

Nijmegen, The Netherlands, October 3, 2016 – Ampleon today announced the BLF189XR, the latest member of its renowned family of extremely rugged “XR” LDMOS power transistors designed specifically for use in high power amplifiers operating in the 10 – 500 MHz. Suiting use in a wide variety of broadcast and industrial applications, and capable of operating with a VSWR up to 65:1, the device is rated to deliver 1,700 Watt CW or 1,900 Watt pulsed.

オランダ ナイメーヘン 2016年10月3日 – アンプレオンは高堅牢性のLDMOS RFパワートランジスタであるXRファミリ(eXtremely Rugged) の新製品BLF189XRを発表しました。

Nijmegen, The Netherlands, September 27, 2016 – Ampleon today announced a new family of integrated Doherty power amplifier devices aimed at LTE Advanced Pro / 4.5G massive-MIMO base station applications. Capable of being used also as power amplifiers in small cells, these compact and highly efficient devices are much smaller and easier to use than a traditional discrete Doherty amplifier design. They comprise a dual-stage Doherty amplifier with two stages of gain and feature 50 ohm matched inputs and outputs (on certain variants). Significantly simplifying the design process, these ultra compact amplifiers occupy the minimum of footprint, essential for today’s space constrained applications and offer the performance consistency required in multiple-antenna systems.

Nijmegen, The Netherlands, May 24, 2016 – Ampleon today announced it will demonstrate a wideband system solution at IMS 2016 that uses Xilinx’s Digital Pre-Distortion (DPD) IP with Xilinx All Programmable SoC and MPSoC technology.

Nijmegen, The Netherlands, May 24, 2016 – Ampleon today announced the availability of a 250 Watt 2.4 – 2.5 GHz amplifier reference design. Believed to be the world’s smallest 250 Watt design, the MicroBlaze 250 measures just 80 x 40 x 5 mm, and is ideal for use in RF cooking and industrial heating designs where power controllability and a modular design approach are key criteria.

Nijmegen, The Netherlands, May 23, 2016 – Ampleon today announced two 400 Watt S band power amplifier pallets designed for a variety of civil and military radar applications. These small form factor modules, measuring just 55 x 35 mm, reduce the overall size of the PA sub assembly in addition to reducing the design’s BOM cost.

Nijmegen, The Netherlands, May 19, 2016 – Ampleon today announced the launch of its “24/7 RF” e-book manual. This, the first edition of the guide, is an essential reference book for any engineer working on RF power amplifier designs and is available for free download at www.ampleon.com/24-7rf.

Nijmegen, The Netherlands, May 18, 2016 – Ampleon today announced a wide portfolio of RF Power solutions for medium power and massive-MIMO applications. These applications include LTE pico- and micro-cells as well as multiple-antenna array (LTE-Advanced Pro and 5G) systems. Proposed for all cellular bands from 700 MHz to 3.8 GHz these solutions are available in a range of forms from dual-stage MMICs to fully integrated multi-stage Doherty PAs matched to 50 Ohms.

Nijmegen, The Netherlands, May 17, 2016 – Ampleon today announced its second generation of 50 Volts 0.5 um GaN on SiC RF power transistors, dedicated for mobile broadband applications. Providing a 5 % improvement in power efficiency compared to LDMOS-based devices, and enabling high-power multiband applications, this GaN family also offers a size reduction in the order of 30 to 50 %, when compared to similar LDMOS transistors. PA designers can now more easily find the perfect fit for each particular set of requirements, be it efficiency, size, power and cost, while getting the full benefit of Ampleon’s experience in PA and transistor design, and manufacturing.

Nijmegen, The Netherlands, May 12,2016 – Ampleon today announced the availability of a new package platform that will be rolled out across the entire LDMOS and GaN product portfolio. Over a dozen variants of the SOT502 and SOT539 platforms are in development. The ACP3, a copper flanged air cavity package will initially be available for GEN9 and GEN10 high power RF transistors. The first products to use the ACP3 package are the BLC9G20XS-400AVT, BLC9G20XS-550AVT and the BLC9G22XS-400AVT devices, which are now in production. Several more products covering different power levels and frequency bands are currently sampling.

Nijmegen, The Netherlands, May 3, 2016 – Ampleon today announced the availability of the BLCU188XRS, a 1400W, CW capable, high power extremely rugged transistor constructed in a thermally optimized air cavity ACP3 copper flanged plastic package. Able to withstand extremely load mismatches, up to a VSWR > 65:1, this Gen6 HV 50 V LDMOS device has a 30% better thermal resistance (Rth) compared to a traditional air cavity ceramic packaged transistor, and combined with its high efficiency, requires less stringent cooling requirements.

Nijmegen, The Netherlands, April 14, 2016 – Ampleon today announced details of its participation at the forthcoming IEEE MTT International Microwave Symposium (IMS) held in San Francisco 22 – 27 May, 2016. On display at booth 2149 will be the latest innovations in power amplifier solutions for mobile broadband applications, Doherty amplifiers for use in broadcast and new product concepts such as pallets for S-band radar applications. Also showcased will be products housed in thermally optimized packages addressing industrial and medical applications.

2016년 4월 27일 – 앰플레온(Ampleon)은 오는 5월 22-27일 미국 샌프란시스코에서 개최되는 IEEE MTT 국제 마이크로웨이브 심포지엄(International Microwave Symposium, IMS)에 참가하여 초고속 무선 통신용 전력 증폭기(PA) 솔루션, 디지털 방송 송출용 도허티(Doherty) 증폭기, S-밴드 레이더용 팔레트(pallet) 등 다양한 최신 기술을 선보인다고 밝혔다. 이와 함께 산업 및 의료 시장을 겨냥한 열최적화 패키지의 제품들도 소개한다. 앰플레온의 최신 기술과 제품들은 IMS 행사장 2149번 부스에서 확인할 수 있다.

荷兰奈梅亨 – 2016年4月26日 - Ampleon 今日宣布参加将于 2016 年 5 月 22 – 27 日在旧金山举办的 IEEE MTT 国际微波会议 (IMS)。将在第 2149 号展位上展出：用于移动宽带应用功率放大器解决方案的最新技术、用于广播的 Doherty 放大器，以及新产品概念，例如用于 S 波段雷达应用的托盘。同时展出的有采用优化散热封装的产品，可以用来解决工业和医疗应用上的问题。

2016年4月25日、オランダ・ナイメーヘン – アンプレオンは、サンフランシスコで2016年5月22日から27日に開催される IEEE MTT 国際マイクロ波シンポジウム (IMS) への参加の詳細を発表しました。同社ブース（小間番号 2149） では、モバイルブロードバンド用パワーアンプ、放送用ドハティアンプ、 Sバンドレーダー用パレットなどの新製品のコンセプトに関する最新技術を展示します。また、産業用および医療用に熱的に最適化されたパッケージに収められた製品も展示する予定です。

Nijmegen, Niederlande, 14. April 2016 – Ampleon hat heute Einzelheiten zur Teilnahme am bevorstehenden IEEE MTT International Microwave Symposium (IMS), das vom 22.-27. Mai 2016 in San Francisco stattfindet, bekanntgegeben. Am Stand 2149 werden die Innovationen zu Leistungsverstärkern für mobile Breitbandanwendungen, Doherty Übertragungsverstärker und neue Produktkonzepte wie Paletten für S-Band Radaranwendungen ausgestellt. Ebenfalls präsentiert werden Produkte, die sich in thermisch optimierten Verpackungen befinden und für industrielle und medizinische Anwendungen geeignet sind.

Nijmegen, The Netherlands, April 7, 2016 – Ampleon today announced its participation at the forthcoming Electronic Design Innovation Conference - EDI CON – held in Beijing, China between April 19 – 21, 2016. At their booth, number 607, Ampleon will showcase demonstrations of a plasma light module developed by Luma in collaboration with Ampleon and, a new recently announced solid state oven developed by Midea in collaboration with Ampleon, in addition to a number of GaN and LDMOS RF power transistor applications. Power transistor products featured at the booth will include the latest 0.5 um GaN family, and the BLCU188XR 1,400 Watt extremely rugged LDMOS power transistor housed in ACP-3, thermally optimized package, reducing thermal resistance (Rth) by 30 %.

荷兰奈梅亨 – 2016年4月7日 - Ampleon宣布参加2016年4月19至21日在北京举办的电子设计创新会议(Electronic Design Innovation Conference - EDI CON)，展台号为607。除了展示多款GaN和LDMOS RF功率晶体管应用之外，Ampleon将会展示与Luma公司共同开发的等离子灯模块产品，以及最近与美的共同研发的固态微波炉产品。Ampleon届时展示的功率晶体管产品包括最新0.5 um GaN系列，以及BLCU188XR 1,400W超皮实的LDMOS功率晶体管，此产品采用ACP-3散热优化封装，将热阻(Rth)减少多达30 %。

Nijmegen, The Netherlands, March 21, 2016 – Ampleon and Midea, a leading global consumer appliance manufacturer, today announced the results of a yearlong joint collaboration into the use of solid state technology for compact oven design. This initiative has resulted in Midea launching what is believed to be the world’s first commercially available solid state RF energy oven. By addressing the technical challenges associated with designing a small cavity appliance with a single antenna, Midea has created a 200 Watt table top oven that achieves homogeneous cooking. The oven can be powered either from a main power source or, for portable use, from a 24 VDC battery. Midea and Ampleon jointly developed the electronics and power amplifier stages while Midea focused on the overall product design.

荷兰奈梅亨 – 2016年3月21日 - Ampleon和世界主要的消费电器制造商美的公司 (Midea) 宣布，两家企业一年来合作使用固态技术开发紧凑型烤箱设计已获得成果，促成美的公司发布相信是市场上第一台世界首创的固态RF能源烤箱。通过解决了与设计单一天线小型腔室电器相关的技术难题，美的公司开发出能够实现均匀烹饪的200W台式烤箱。这款烤箱能够由主电源供电，或者采用24 VDC电池供电以实现便携式使用。美的公司和Ampleon共同开发电子与功率放大级，而整体产品设计则由美的公司重点负责。

アンプレオンと中国で最大級の家電生産企業Mideaはソリッド･ステート･クッキング技術をコンパクトなオーブンレンジに使用する長年にわたるコラボレーションの結果を発表しました。 この導入への取組みにより、Mideaは世界で初めてソリッド･ステート･クッキング技術を採用したオーブンレンジの市場導入となります。 コンパクトな庫内容量にマイクロ波を照射するアンテナ1本で構成する技術的な困難を克服し、Mideaは200Wのテーブルトップで均一な調理が使用できるオーブンを開発しました。 このオーブンは一般の家庭用電源、または24Vdcバッテリーでポータブルに使用が可能です。 Mideaとアンプレオンはパワーアンプ部分を共同開発、Mideaは製品設計に集中しました。

Nijmegen, The Netherlands, March 8, 2016 – Ampleon today announced the launch of the BLF888E RF power transistor designed for DVB-T UHF asymmetrical wideband Doherty amplifier applications. Fabricated in a SOT539 package using a sixth generation high voltage LDMOS process, the BLF888E has greater than 50% power efficiency, this being typically up to 10% more efficient compared to previous devices. With its high efficiency rating, the device helps reduce the energy consumption profile of the end-application. The average DVB-T power output is 150 Watt, representing typically a 25% increase in output power of previous devices making it one of the highest power levels available from a single transistor for such broadcast applications.

アンプレオンは本日、RFパワートランジスタの新製品「BLF888E」の製品リリースを発表しました。 BLF888Eはテレビ放送送信機用にUHFの広周波数帯域を非対称ドハティ方

Nijmegen, The Netherlands, February 9, 2016 – Ampleon today announced that it has entered into a collaborative research project with the HAS University of Applied Sciences in Den Bosch, The Netherlands into the use of full spectrum lighting for horticultural applications. In addition the project will validate and summarize current research and investigations that are available.

Nijmegen, Nederland, Februari 9, 2016 – Ampleon heeft vandaag bekendgemaakt dat het met de HAS Hogeschool in Den Bosch participeert in een gezamenlijk onderzoeksproject naar het gebruik van full spectrum verlichting voor toepassingen in de tuinbouw. Daarnaast zal het project lopend onderzoek alsmede andere beschikbare studies op dit gebied valideren en in kaart brengen.

Nijmegen, The Netherlands, January 13, 2016 – Ampleon today announced the release of a comprehensive portfolio of overmoulded plastic (OMP) RF power transistors using the well known, extremely rugged LDMOS technology.

Nijmegen, Niederlande, 13. Januar 2016 – Ampleon kündigt ein umfangreiches Angebot an Overmoulded Plastic (OMP) HF-Leistungstransistoren an, die auf der bewährten und robusten LDMOS-Technologie basieren.

Nijmegen, Paesi Bassi, 13 Gennaio 2016 – Ampleon ha annunciato la disponibilità di un'ampia gamma di transistor di potenza RF ospitati in package OMP (OverMoulded Plastic) realizzati sfruttando la collaudata e affidabile tecnologia LDMOS.

荷兰奈梅亨 – 2016年1月13日 – Ampleon宣布推出全面广泛的模压塑料(overmoulded plastic, OMP) RF功率晶体管产品组合，采用众所周知的非常稳固LDMOS技术。

Nijmegen, The Netherlands, December 14, 2015 – Ampleon today announced the extension of its portfolio of GaN RF power transistors based on a 0.5um HEMT process technology. Comprising 10W, 30W, 50W and 100W devices, over ten transistors are currently available suitable for multiple applications such as drivers up to C band, through to 100W and 200W push-pull packages for use in final stages up to S band. Housed in a compact and thermally stable ceramic package, the whole CLF1G family of devices are ideal for use in a broad range of applications that need to meet specific requirements of SWaP (size, weight and power).

Nijmegen, The Netherlands, December 7, 2015 – Ampleon today announced the formation of its global business operations following the successful acquisition of the RF Power business line by Jianguang Asset Management Co. Ltd from NXP Semiconductors. With immediate effect Ampleon takes responsibility for the entire RF Power business activity, including sales and support of the complete line-up of LDMOS and GaN RF power products. With 1,250 employees across 16 engineering, sales and manufacturing facilities worldwide, Ampleon is headquartered in Nijmegen and is founded with 50+ years of product innovation and engineering excellence.

荷兰奈梅亨 – 2015年12月8日 - Ampleon公司宣布，北京建广资产有限公司成功收购恩智浦半导体的RF电源业务后，建立Ampleon公司的全球业务运作。Ampleon公司负责整体射频(RF)电源业务活动，包括LDMOS和GaN RF电源产品的销售和支持，立即生效。Ampleon公司在世界各地的16个工程技术、销售和制造设施拥有1,250名员工，公司总部位于荷兰奈梅亨，凭借50多年的产品创新和卓越工程实力而建立。

Nijmegen, The Netherlands, December 7, 2015 – Na de succesvolle overname van de RF Power-divisie van NXP Semiconductors door Jianguang Asset Management Co. Ltd, start Ampleon de wereldwijde bedrijfsactiviteiten op dit gebied. Dit heeft het nieuwgevormde bedrijf vandaag bekendgemaakt. Ampleon is met onmiddellijke ingang verantwoordelijk voor de gehele RF Power-divisie, inclusief de wereldwijde sales en ondersteunende activiteiten van de volledige portfolio van LDMOS en GaN HF-vermogensproducten. Ampleon, met hoofdkantoor in Nijmegen, heeft 1.250 medewerkers in wereldwijd zestien ontwikkel-, verkoop- en productiefaciliteiten. Het recent opgerichte bedrijf stoelt op meer dan 50 jaar ervaring in productinnovatie en engineering knowhow.

Nijmegen, The Netherlands, Dicembre 7, 2015 – Ampleon ha annunciato l’avvio delle proprie attività su scala globale dopo il completamento dell’acquisizione, da parte di Jianguang Asset Management Co. Ltd, della divisione RF Power di NXP Semiconductors. Con effetto immediato Ampleon assumerà la responsabilità di tutte le attività di business di RF Power, compresa la vendita e il supporto dell’intera linea di prodotti di potenza LDMOS e GaN RF. Forte di 1.250 persone dislocate in 16 sedi sparse in tutto il mondo impegnate in attività di ingegnerizzazione, vendita e produzione, Ampleon ha il proprio quartier generale a Nijmegen è può vantare oltre 50 anni di innovazione di prodotto e di eccellenza tecnica.