Date: December 14, 2015
Nijmegen, The Netherlands – 14 December 2015 - Ampleon today announced the extension of its portfolio of GaN RF power transistors based on a 0.5um HEMT process technology. Comprising 10W, 30W, 50W and 100W devices, over ten transistors are currently available suitable for multiple applications such as drivers up to C band, through to 100W and 200W push-pull packages for use in final stages up to S band. Housed in a compact and thermally stable ceramic package, the whole CLF1G family of devices are ideal for use in a broad range of applications that need to meet specific requirements of SWaP (size, weight and power).
Said Senior Director of Marketing, Ampleon Multi Market Business Unit, Thijs Tullemans: “We are investing heavily in both LDMOS and GaN technology, as we see GaN gaining momentum beyond the A&D market, into areas such as cellular infrastructure. Indeed we see significant growth opportunities in both market segments, but with respect to GaN, the technology offers us the opportunity to broaden our product offering to our customers, and we will be releasing more in-depth news on the GaN front in the coming months.”
Optimized for best in class linearity, power efficiency, and broadband power performance, Ampleon’s GaN devices are available with electrical models, reference designs and demonstration boards. Typical applications include use in commercial aviation and radar applications, aerospace and defense systems, and broadband solutions.
Devices available include the CLF1G0035S-50, a broadband 50W amplifier capable of operation from DC through to 3.5GHz that is designed for operation up to 50V and having excellent VSWR (ruggedness) capabilities of 10:1. 100W devices have just been released, and Ampleon are currently sampling other types for mass production during early 2016.
Being a European supplier, Ampleon is a so called ‘ITAR*-free’ supplier, a factor that is appreciated by its customers in the worldwide A&D marketplace.
Together with a line-up of reliable and cost effective LDMOS-based RF power transistors, the GaN portfolio complements and strengthens Ampleon’s RF power offerings to its customers, helping them to bring better solutions to market.
* ITAR (International Traffic in Arms Regulations) and the EAR (Export Administration Regulations) are export control regulations run by different departments of the US Government.
For further information and reader enquiries:
Natascha Jellema, Marketing Communication Manager
Ampleon, Building BY 3.088, Gerstweg 2, 6534 AE Nijmegen, The Netherlands
Tel: +31 6 208 14 771,
For further information, text and graphics by email or to discuss feature article opportunities:
Robert Huntley, Director
Tel: +44 1225 470000, Email: email@example.com,
Created in 2015, Ampleon is shaped by 50 years of RF power leadership. Recently being spun-off from NXP Semiconductors, the company is set-out to exploit the full potential of data and energy transfer in RF. Ampleon has more than 1250 employees worldwide, dedicated to creating optimal value for customers. Its innovative, yet consistent portfolio offers products and solutions for a wide range of applications, such as cellular base stations, radio/TV/broadcasting, radar, air traffic control, cooking, lighting, industrial lasers and medical. For details on the leading global partner in RF Power, visit www.ampleon.com