Power LDMOS transistor

Based on Advanced Rugged Technology (ART), this 4000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.

Features and benefits

  • High breakdown voltage enables class E operation up to VDS = 53 V
  • Qualified up to a maximum of VDS = 75 V
  • Characterized from 30 V to 75 V to support a wide range of applications
  • Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
  • Excellent ruggedness with no device degradation
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Industrial, scientific and medical applications
    • Plasma generators
    • MRI systems
    • CO2 lasers
    • Particle accelerators
  • Broadcast
    • FM radio
    • VHF TV
  • Communications
    • Non cellular communications
    • UHF radar

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1 450 MHz
PL(1dB) nominal output power at 1 dB gain compression 4000 W
Test signal: Pulsed RF
VDS drain-source voltage PL = 4000 W [0] 75 V
Gp power gain PL = 4000 W [0] 22.8 25 dB
RLin input return loss PL = 4000 W [0] -23 -9 dB
ηD drain efficiency PL = 4000 W [0] 65 73 %

Package / Packing

Type number Package type,
(Package outline)
Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
ART4K0FX ACC-1230
(SOT539A)
sot539a_po Tray; 20-fold; non-dry pack Active Standard Marking ART4K0FXU
(9349 610 77112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source [1]

Recommended line-up

No documentation available.