BLM10D3438-70ABG
Download datasheetBLM10D3438-70ABG
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This product has been discontinued.
Click here for discontinuation information.
The replacement is: B11G3338N81D
The replacement is: B11G3338N81D
LDMOS 3-stage integrated Doherty MMIC
The BLM10D3438-70ABG is a 3-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or mMIMO final in the frequency range from 3400 MHz to 3800 MHz. Available in gull wing.
Features and benefits
- Integrated input splitter
- Integrated output combiner
- High efficiency
- Designed for broadband operation (frequency 3400 MHz to 3800 MHz)
- Independent control of carrier and peaking bias
- Integrated ESD protection
- Source impedance 50 Ω; high power gain
- For RoHS compliance see the product details on the Ampleon website
Applications
- RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA and LTE base stations in the 3400 MHz to 3800 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 3400 | 3800 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 66 | W | |||
| Test signal: Pulsed CW | ||||||
| VDS | drain-source voltage | [0] [1] | 28 | V | ||
| PL(AV) | average output power | [0] [1] | 10 | W | ||
| Gp | power gain | f = 3600 MHz [0] [1] | 29.5 | 31.5 | 33.5 | dB |
| ηD | drain efficiency | PL = 10 W (40 dBm) [0] [1] | 33 | 42 | % | |
| ηD | drain efficiency | PL = PL(3dB) [0] [1] | 34 | 41 | % | |
| RLin | input return loss | [0] [1] | -15 | -10 | dBm | |
| PL(3dB) | output power at 3 dB gain compression | [0] [1] | 47.4 | 48.2 | dBm | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number |
Package type, (Package outline) |
Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| BLM10D3438-70ABG | OMP-400 (OMP-400-8G-1) |
omp-400-8g-1_po | Tray, NonBakeable, Multiple in Drypack | Discontinued | Standard Marking |
BLM10D3438-70ABGZ (934960261517) |
| Reel 13" Q1/T1 in Drypack | Discontinued | Standard Marking |
BLM10D3438-70ABGYZ (934960261535) |
Discontinuation information
| Type number | 12NC | OPN | LTB date | LTD date | Replacement | DN notice | Product status |
|---|---|---|---|---|---|---|---|
| BLM10D3438-70ABG | 934960261517 | BLM10D3438-70ABGZ | 2024-09-30 | 2024-12-31 | B11G3338N81D | 202310003DN | Discontinued |
| BLM10D3438-70ABG | 934960261535 | BLM10D3438-70ABGYZ | 2024-09-30 | 2024-12-31 | B11G3338N81D | 202310003DN | Discontinued |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | VDS1 | drain-source voltage of driver stages |
|
|
| 2 | VGS(P) | gate-source voltage of peaking P | ||
| 3 | VGS(C) | gate-source voltage of carrier C | ||
| 4 | RF_IN | RF input | ||
| 5 | VGS(C) | gate-source voltage of carrier C | ||
| 6 | VGS(P) | gate-source voltage of peaking P | ||
| 7 | VDS1 | drain-source voltage of driver stages | ||
| 8 | RF_OUT/VDS2 | RF output / drain-source voltage of final stages | ||
| flange | GND | RF ground |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| LDMOS 3-stage integrated Doherty MMIC | Data sheet | 2020-09-18 | |
| Mounting and soldering of RF transistors in overmolded plastic packages | Application note | 2025-02-03 | |
| Packages for RF power transistors | Leaflet | 2026-04-17 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2026-06-15 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLM10D3438-70ABG (Data sheet) | Design support | 2020-10-01 |