Nijmegen, The Netherlands, May 20, 2026 – Ampleon announces the C4H15P400A, a high-power 400 W GaN on SiC Doherty RF transistor designed to enable high efficiency, broadband performance and strong linearity for base station applications in the 1.4 GHz to 1.5 GHz frequency range. Engineered for modern single- and multi-carrier systems, the device delivers the performance and robustness required to meet the growing demands of wireless infrastructure while simplifying RF amplifier design.
As base station architectures continue to evolve toward higher bandwidth and increasingly complex modulation schemes, RF designers are challenged to maintain efficiency and linearity across wide operating conditions without adding excessive design complexity. Achieving this balance is particularly demanding in high-power Doherty configurations, where device behavior, matching and thermal performance must be carefully optimized. The C4H15P400A addresses these challenges by combining advanced GaN technology with an asymmetric Doherty architecture, delivering high efficiency and stable performance across the full operating band while enabling simpler and more predictable amplifier design.
Under typical W-CDMA operating conditions, the device delivers 47.5 dBm average output power with gain of 18.4 dB and drain efficiency exceeding 57 %, while maintaining strong linearity with ACPR around −30 dBc. This level of performance enables higher energy efficiency and improved signal quality in multi-carrier systems, directly contributing to lower operating costs and enhanced network performance.
The C4H15P400A is specifically optimized for wideband Doherty operation from 1432 MHz to 1517 MHz, supporting flexible deployment across multiple frequency allocations without requiring extensive redesign. Its excellent digital pre-distortion capability further enhances system-level linearity, allowing designers to meet stringent spectral requirements while maintaining efficiency. Internal matching reduces external component count and simplifies integration, helping accelerate development cycles and reduce design risk.
In real-world base station environments, robustness and thermal performance are critical to long-term reliability. The C4H15P400A delivers strong ruggedness, with the ability to withstand load mismatch conditions up to 10:1 VSWR under Doherty operation, ensuring stable performance even under challenging impedance conditions. Combined with low thermal resistance characteristics, this provides the thermal headroom required for sustained high-power operation and dependable field performance.
The C4H15P400A is now available through Ampleon’s global distribution network. For pricing and ordering information, please contact your local Ampleon sales representative or preferred distributor.
For more information, visit:
www.ampleon.com/pip/C4H15P400A
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For further information and reader inquiries:
Igor Lalicevic, Senior Director, Product Marketing,
Ampleon Netherlands B.V.,
Halfgeleiderweg 8, 6534 AV Nijmegen, The Netherlands,
Email: igor.lalicevic@ampleon.com,
www.ampleon.com
About Ampleon:
Created in 2015 and headquartered in the Netherlands, Ampleon is shaped by nearly 60 years of RF power leadership. The company envisions to advance society through innovative RF solutions based on GaN and LDMOS technologies. Ampleon is dedicated to being the partner of choice by delivering high-quality, high-performance RF products with its world-class talent. The portfolio offers flexibility in scaling design and production for any volume and addresses applications for 4G LTE, 5G NR infrastructure, industrial, scientific, medical, broadcast, navigation and safety radio. Proven reliability, secure supply and excellent product consistency enable highest manufacturing yields for customers who benefit from Ampleon being a one-stop-partner for RF power solutions. For more details, please visit www.ampleon.com.