1. Home
  2. High-power GaN RF transistors for L- and S-band radar - Engineered for long-pulse performance

High-power GaN RF transistors for L- and S-band radar - Engineered for long-pulse performance

High-efficiency RF power transistors for L- and S-band radar, optimized for demanding radar applications

Radio Frequency (RF) Radar transmitters are evolving quickly and system designers face the challenge of delivering more power, supporting longer pulses, and ensuring reliable operation under thermally demanding conditions.

Ampleon’s dedicated L- and S-band portfolio addresses these needs with frequency-optimized GaN RF transistors that combine high efficiency, superior thermal performance, and outstanding ruggedness. Covering L-band and S-band, these devices deliver more than 700 W output power while maintaining cooler operation and stable performance, even at multi-millisecond pulse widths and duty cycles up to 20 %.

For amplifier designers, this means fewer trade-offs: the combination of high output power and excellent thermal headroom reduces system cooling requirements, simplifies design, and extends overall transmitter lifetime. Internal input matching further accelerates integration.

More power, less heat: Compared with alternative devices, Ampleon’s 700 W line-up delivers up to 2x the RF output power while still showing lower transient thermal impedance (Zth). With ~60 % drain efficiency, these transistors lower power dissipation and junction temperature rise, enabling long-term reliability and robust performance under harsh conditions.

Key features
Optimized for L-band (960–1400 MHz), Low S-band (2700–3100 MHz) and High S-band (3100–3500 MHz)
Output power >700 W in compact flanged and ceramic packages
Long-pulse support up to 300 µs and beyond, with up to 20 % duty cycle
~60 % drain efficiency for reduced Pdiss
Low transient thermal impedance (Zth) for cooler operation
Internally matched input for faster, easier design-in
Excellent ruggedness and reliability under harsh operating conditions
Key benefits
“More power, less heat” – extended system lifetime and reliability
Superior thermal performance – lower junction temperature rise per watt
Stable long-pulse operation – ideal for modern radar waveforms
High efficiency reduces cooling requirements and eases SWaP constraints
Flexible package options support diverse mechanical and thermal needs
Simplified amplifier design accelerates time-to-market
Junction Temperature Rise (ΔTj) at typical long-pulse conditions
Junction Temperature Rise (ΔTj) at typical long-pulse conditions
Thermal Impedance (Zth) across Pulse Width
Thermal Impedance (Zth) across Pulse Width
Application overview
Report number Type number Technology Package outline Frange (MHz) Pout (W) ηD (%) VDS (V) Demo signal
AR201110 CLL3H0914L(S)-700 GaN 50 V SOT502A(B) 960–1215 > 725 > 52 50 Pulsed CW
AR191060 CLL3H0914L(S)-700 GaN 50 V SOT502A(B) 1200–1400 700 > 61 50 Pulsed CW
AR211131* CLS3H2731L(S)-700 GaN 50 V SOT502A(B) 2700–3100 700 56–58 50 Pulsed CW
AR251999* CLS3H3135L(S)-700 GaN 50 V SOT502A(B) 3100–3500 700 58 50 Pulsed CW

* For access, please contact our local sales representative via: www.ampleon.com/contact

CLL3H0914L(S)-700 demo board
CLL3H0914L(S)-700 demo board
CLS3H2731L(S)-700 demo board
CLS3H2731L(S)-700 demo board
CLS3H3135L(S)-700 demo board
CLS3H3135L(S)-700 demo board

Committed to your success

During the entire process from design to delivery, we provide a range of support options to address your needs. Whether you require load-pull data, application boards, samples, ADS / AWR models, assistance with a complex design challenge or seek quick advice, we are on stand-by to support you. Our application engineering resources are spread around the globe, with our offices in Nijmegen / The Netherlands, Toulouse / France, Smithfield / USA, and Shanghai / China.