BLM9D2022-08AM
Download datasheetBLM9D2022-08AM
Download datasheetLDMOS 2-stage integrated Doherty MMIC
The BLM9D2022-08AM is a 2-stage 8 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 2110 MHz to 2170 MHz. Available in LGA outline.
Features and benefits
- Integrated input splitter
- Integrated output combiner
- Very high efficiency
- Designed for broadband operation (frequency 2110 MHz to 2170 MHz)
- Independent control of carrier and peaking bias
- Integrated ESD protection
- Excellent thermal stability
- High power gain, input and output matched to impedance 50 Ω
- For RoHS compliance see the product details on the Ampleon website
Applications
- RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA, LTE and NR small cell base stations in the 2110 MHz to 2170 MHz frequency range
Parametrics
Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|
frange | frequency range | 2110 | 2170 | MHz | ||
PL(3dB) | nominal output power at 3 dB gain compression | 8 | W | |||
Test signal: CW pulsed | ||||||
VDS | drain-source voltage | [0] | 28 | V | ||
Gp | power gain | [0] | 25 | 26.6 | 29 | dB |
ηD | drain efficiency | PL = 1.12 W [0] | 36 | 40.7 | % | |
RLin | input return loss | [0] | -16 | -13 | dB | |
PL(3dB) | output power at 3 dB gain compression | [0] | 38.5 | 39.2 | dBm |
Package / Packing
Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
---|---|---|---|---|---|---|---|
BLM9D2022-08AM | LGA-7x7-20-1 (LGA-7x7-20-1) |
lga-7x7-20-1_po | Reel 7" Q1/T1 in Drypack | Active | Standard Marking |
BLM9D2022-08AMZ (9349 603 03515) |
Pinning info
Pin | Symbol | Description | Simplified outline | Graphic symbol |
---|---|---|---|---|
1 | VGS_P | gate-source voltage of peaking | ||
2 | GND | ground | ||
3 | GND | ground | ||
4 | RFin | RF input | ||
5 | GND | ground | ||
6 | GND | ground | ||
7 | VDS1_P | drain-source voltage of peaking driver | ||
8 | GND | ground | ||
9 | VDS2 | drain-source voltage of final stages | ||
10 | GND | ground | ||
11 | GND | ground | ||
12 | RFout | RF output | ||
13 | GND | ground | ||
14 | GND | ground | ||
15 | GND | ground | ||
16 | GND | ground | ||
17 | GND | ground | ||
18 | GND | ground | ||
19 | VDS1_C | drain-source voltage of carrier driver | ||
20 | VGS_C | gate-source voltage of carrier driver | ||
21 | GND | RF ground |
Ordering & availability
Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
---|---|---|---|---|---|
BLM9D2022-08AM | 9349 603 03515 | BLM9D2022-08AMZ | RFMW | Buy | Request samples |
DigiKey | Buy |
Ordering & availability
Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
---|---|---|---|---|---|
BLM9D2022-08AM | 9349 603 03515 | BLM9D2022-08AMZ | RFMW | Buy | Request samples |
DigiKey | Buy |
Documentation
Title | Type | Date | |
---|---|---|---|
LDMOS 2-stage integrated Doherty MMIC | Data sheet | 2020-09-10 | |
Mounting and soldering of RF transistors in overmolded plastic packages | Application note | 2023-07-24 | |
Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
Packages for RF power transistors | Leaflet | 2024-09-25 | |
LDMOS ruggedness reliability | Other type | 2017-03-28 | |
Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
Title | Type | Date | |
---|---|---|---|
Printed-Circuit Board (PCB) BLM9D2022-08AM (Data sheet) | Design support | 2020-11-13 |