Power LDMOS transistor

A 2000 W advanced ruggedness LDMOS power transistor for industrial, scientific and medical applications in the HF to 400 MHz band.

Features and benefits

  • High breakdown voltage enables class E operation up to VDS = 50 V
  • Qualified up to a maximum of VDS = 65 V
  • Characterized from 30 V to 65 V for extended power range
  • Easy power control
  • Integrated dual sided ESD protection enables class C operation and complete switch
  • off of the transistor
  • Excellent ruggedness with no device degradation
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation
  • For RoHS compliance see the product details on the Ampleon website


  • Industrial, scientific and medical applications
    • Plasma generators
    • MRI systems
    • CO2 lasers
    • Particle accelerators
  • Radio and VHF TV broadcast transmitters
  • Aerospace
    • HF communications
    • Radar


Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1.8 400 MHz
PL(1dB) nominal output power at 1 dB gain compression 2000 W
Test signal: Pulsed RF
VDS drain-source voltage PL = 2000 W [0] 65 V
Gp power gain PL = 2000 W [0] 28.9 dB
RLin input return loss PL = 2000 W [0] 14.2 dB
ηD drain efficiency PL = 2000 W [0] 72.9 %

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
sot539a_po Bulk Pack Development Standard Marking ART2K0FEU
(9349 602 80112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source


Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
Quality and reliability disclaimer


Title Type Date
Power LDMOS transistor Data sheet 2020-01-14

Design support

Title Type Date
PCB Design ART2K0FE (Data sheet) Design support 2020-01-16