Power LDMOS transistor
Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.
Features and benefits
- High breakdown voltage enables class E operation up to VDS = 53 V
- Qualified up to a maximum of VDS = 65 V
- Characterized from 30 V to 65 V to support a wide range of applications
- Integrated thermal sensor
- Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
- Excellent ruggedness with no device degradation
- High efficiency
- Excellent thermal stability
- Designed for broadband operation
- For RoHS compliance see the product details on the Ampleon website
Applications
- Industrial, scientific and medical applications
- Plasma generators
- MRI systems
- CO2 lasers
- Particle accelerators
- Broadcast
- FM radio
- VHF TV
- Communications
- Non cellular communications
- UHF radar
Parametrics
Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|
frange | frequency range | 1 | 400 | MHz | ||
PL(1dB) | nominal output power at 1 dB gain compression | 2000 | W | |||
Test signal: Pulsed RF | ||||||
VDS | drain-source voltage | PL = 2000 W [0] | 65 | V | ||
Gp | power gain | PL = 2000 W [0] | 27 | 29 | dB | |
RLin | input return loss | PL = 2000 W [0] | -15 | dB | ||
ηD | drain efficiency | PL = 2000 W [0] | 68 | 73 | % |
Package / Packing
Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
---|---|---|---|---|---|---|---|
ART2K0TFE | ACC-1230-6F-3 (ACC-1230-6F-3) |
acc-1230-6f-3_po | TR13; 100-fold; 56 mm; non-dry pack | Active | Standard Marking |
ART2K0TFEJ (9349 607 63118) |
Pinning info
Pin | Symbol | Description | Simplified outline | Graphic symbol |
---|---|---|---|---|
1 | D1 | drain1 | ||
2 | D2 | drain2 | ||
3 | G1 | gate1 | ||
4 | G2 | gate2 | ||
5 | S | source | ||
6 | FET1 | temperature sense FET1 | ||
7 | FET2 | temperature sense FET2 |
Documentation
Title | Type | Date | |
---|---|---|---|
Power LDMOS transistor | Data sheet | 2024-07-31 | |
Thermal characteristics of ART LDMOS power transistors | Application note | 2023-03-01 | |
Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
RF power solutions for ISM, broadcast, navigation and safety radio applications | Brochure | 2024-10-08 | |
RF power application reports for ISM, broadcast, navigation and safety radio applications | Brochure | 2024-10-08 | |
Packages for RF power transistors | Leaflet | 2024-09-25 |
Recommended line-up
Design support
Title | Type | Date | |
---|---|---|---|
Printed-Circuit Board (PCB) ART2K0TFES(G) (Data sheet) | Design support | 2023-07-26 | |
ART2K0TFES Model for ADS (Keysight Advanced Design System) | Simulation model | 2023-07-17 | |
ART2K0TFES SPICE Model | Simulation model | 2023-07-17 | |
ART2K0TFES(G) Cauer Thermal Transient Impedance Model | Simulation model | 2023-07-17 | |
ART2K0TFES(G) Foster Thermal Transient Impedance Model | Simulation model | 2023-07-17 | |
ART2K0TFES 65V 100mA S-parameter Data | S-parameter | 2023-08-08 | |
ART2K0TFES Model for Cadence AWR Microwave Office® | Simulation model | 2023-08-08 | |
ART2K0TFES Simulation Example for Cadence AWR Microwave Office® | Simulation model | 2023-08-08 |