Ampleon is participating in the IEEE International Microwave Symposium (IMS), held in Denver, CO, USA and is introducing several new gallium nitride (GaN) and LDMOS solutions intended for use in wireless infrastructure, aerospace and defense, NCC (non-cellular communication), ISM (industrial, scientific and medical), cooking and defrosting applications.
Ampleon is participating in the IEEE International Microwave Symposium (IMS), held in Denver, CO, USA and is introducing several new gallium nitride (GaN) and LDMOS solutions intended for use in wireless infrastructure, aerospace and defense, NCC (non-cellular communication), ISM (industrial, scientific and medical), cooking and defrosting applications.
Ampleon, utilizing advanced LDMOS transistor technology, introduces the B11G3338N80D push-pull 3-stage fully integrated Doherty RF transistor being the carrier product for GEN11 Macro driver family covering all sub-6GHz frequency bands. This highly efficient multiband device covers a frequency range from 3.3 to 3.8GHz, enabling the implementation of next-generation high power and market-leading efficiency macro base stations.
Ampleon announced the release of two new broadband GaN-on-SiC HEMT transistors in the power classes of 30 Watts CLF3H0060(S)-30, 100 Watts CLF3H0035(S)-100. These high linearity devices are the initial products from our Generation 3 GaN-SiC HEMT process recently qualified and released to production.
Ampleon announced the introduction of the BLC10G27XS-400AVT 400-Watt asymmetric Doherty RF power transistor. Designed for use in base station multi-carrier applications operating in the 2.496 GHz to 2.690 GHz frequency range, the -400AVT uses Ampleon's industry-respected 9th generation 28 V LDMOS process technology.
