Ampleon is showcasing several new products at the IEEE International Microwave Symposium 2022 Jun 17, 2022

Ampleon is participating in the IEEE International Microwave Symposium (IMS), held in Denver, CO, USA and is introducing several new gallium nitride (GaN) and LDMOS solutions intended for use in wireless infrastructure, aerospace and defense, NCC (non-cellular communication), ISM (industrial, scientific and medical), cooking and defrosting applications.

Vacancy: Characterization Engineer - ID 1295 Apr 15, 2022

Nijmegen, the Netherlands

Vacancy: Quality Engineer Package Predevelopment - ID 1286 Apr 15, 2022

Nijmegen, the Netherlands

Vacancy: Characterization Engineer - ID 1295 Apr 15, 2022

Nijmegen, the Netherlands

Vacancy: Quality Engineer Package Predevelopment - ID 1286 Apr 15, 2022

Nijmegen, the Netherlands

Vacancy: Principal RF Design Engineer - ID 1247 Apr 15, 2022

Nijmegen, the Netherlands

Ampleon is showcasing several new products at the IEEE International Microwave Symposium 2022 Jun 17, 2022

Ampleon is participating in the IEEE International Microwave Symposium (IMS), held in Denver, CO, USA and is introducing several new gallium nitride (GaN) and LDMOS solutions intended for use in wireless infrastructure, aerospace and defense, NCC (non-cellular communication), ISM (industrial, scientific and medical), cooking and defrosting applications.

Ampleon extends isolator-free sub-6GHz line-ups with compact multistage Doherty MMIC drivers for 5G NR and 4G LTE Macro base station applications Feb 24, 2022

Ampleon, utilizing advanced LDMOS transistor technology, introduces the B11G3338N80D push-pull 3-stage fully integrated Doherty RF transistor being the carrier product for GEN11 Macro driver family covering all sub-6GHz frequency bands. This highly efficient multiband device covers a frequency range from 3.3 to 3.8GHz, enabling the implementation of next-generation high power and market-leading efficiency macro base stations.

Ampleon boosts GaN-on-SiC HEMT transistor performance with the release of Generation 3 Feb 22, 2022

Ampleon announced the release of two new broadband GaN-on-SiC HEMT transistors in the power classes of 30 Watts CLF3H0060(S)-30, 100 Watts CLF3H0035(S)-100. These high linearity devices are the initial products from our Generation 3 GaN-SiC HEMT process recently qualified and released to production.

Ampleon extends LDMOS base station and multi-carrier line up with the introduction of 400 W rugged Doherty RF power transistor Oct 27, 2021

Ampleon announced the introduction of the BLC10G27XS-400AVT 400-Watt asymmetric Doherty RF power transistor. Designed for use in base station multi-carrier applications operating in the 2.496 GHz to 2.690 GHz frequency range, the -400AVT uses Ampleon's industry-respected 9th generation 28 V LDMOS process technology.