Ampleon’s “New” standard for L Band, GaN-SiC HEMT Sep 26, 2022

Ampleon will showcase at the European Microwave Week 2022 our latest solutions and innovative products in GaN and LDMOS technologies. Among the products on display will be ones aimed at wireless infrastructure, avionics/defence, non-cellular communication, cooking/ defrosting, and ISM-related applications. A key highlight for visitors will be the brand new CLL3H0914L-700 GaN-SiC HEMT.

Vacancy: Master Planner - ID 1308 Aug 26, 2022

Nijmegen, the Netherlands

Vacancy: Principal Quality Engineer - ID 1313 Aug 26, 2022

Nijmegen, the Netherlands

Vacancy: RF Product Engineer - ID 1309 Aug 26, 2022

Toulouse, France

Vacancy: Master Planner - ID 1308 Aug 26, 2022

Nijmegen, the Netherlands

Vacancy: Principal Quality Engineer - ID 1313 Aug 26, 2022

Nijmegen, the Netherlands

Vacancy: RF Product Engineer - ID 1309 Aug 26, 2022

Toulouse, France

Ampleon’s “New” standard for L Band, GaN-SiC HEMT Sep 26, 2022

Ampleon will showcase at the European Microwave Week 2022 our latest solutions and innovative products in GaN and LDMOS technologies. Among the products on display will be ones aimed at wireless infrastructure, avionics/defence, non-cellular communication, cooking/ defrosting, and ISM-related applications. A key highlight for visitors will be the brand new CLL3H0914L-700 GaN-SiC HEMT.

Ampleon is showcasing several new products at the IEEE International Microwave Symposium 2022 Jun 17, 2022

Ampleon is participating in the IEEE International Microwave Symposium (IMS), held in Denver, CO, USA and is introducing several new gallium nitride (GaN) and LDMOS solutions intended for use in wireless infrastructure, aerospace and defense, NCC (non-cellular communication), ISM (industrial, scientific and medical), cooking and defrosting applications.

Ampleon extends isolator-free sub-6GHz line-ups with compact multistage Doherty MMIC drivers for 5G NR and 4G LTE Macro base station applications Feb 24, 2022

Ampleon, utilizing advanced LDMOS transistor technology, introduces the B11G3338N80D push-pull 3-stage fully integrated Doherty RF transistor being the carrier product for GEN11 Macro driver family covering all sub-6GHz frequency bands. This highly efficient multiband device covers a frequency range from 3.3 to 3.8GHz, enabling the implementation of next-generation high power and market-leading efficiency macro base stations.

Ampleon boosts GaN-on-SiC HEMT transistor performance with the release of Generation 3 Feb 22, 2022

Ampleon announced the release of two new broadband GaN-on-SiC HEMT transistors in the power classes of 30 Watts CLF3H0060(S)-30, 100 Watts CLF3H0035(S)-100. These high linearity devices are the initial products from our Generation 3 GaN-SiC HEMT process recently qualified and released to production.