Vacancy: Manager Reporting Jun 10, 2024

Nijmegen, The Netherlands

Vacancy: Opex and Project Controller Jun 10, 2024

Nijmegen, The Netherlands

Internship Human Resources May 13, 2024

Nijmegen, The Netherlands

Ampleon unveils advanced extremely rugged high-power solid state power amplifiers May 1, 2024

Ampleon presents its newest 2500 W peak RF power transistors, powered by a 75 V supply. This marks a notable leap forward in the Advanced Rugged Transistors (ART) technology, setting a new standard for robustness and performance.

Vacancy: Manager Reporting Jun 10, 2024

Nijmegen, The Netherlands

Vacancy: Opex and Project Controller Jun 10, 2024

Nijmegen, The Netherlands

Internship Human Resources May 13, 2024

Nijmegen, The Netherlands

Ampleon unveils advanced extremely rugged high-power solid state power amplifiers May 1, 2024

Ampleon presents its newest 2500 W peak RF power transistors, powered by a 75 V supply. This marks a notable leap forward in the Advanced Rugged Transistors (ART) technology, setting a new standard for robustness and performance.

Ampleon’s “New” standard for L Band, GaN-SiC HEMT Sep 26, 2022

Ampleon will showcase at the European Microwave Week 2022 our latest solutions and innovative products in GaN and LDMOS technologies. Among the products on display will be ones aimed at wireless infrastructure, avionics/defence, non-cellular communication, cooking/ defrosting, and ISM-related applications. A key highlight for visitors will be the brand new CLL3H0914L-700 GaN-SiC HEMT.

Ampleon extends isolator-free sub-6GHz line-ups with compact multistage Doherty MMIC drivers for 5G NR and 4G LTE Macro base station applications Feb 24, 2022

Ampleon, utilizing advanced LDMOS transistor technology, introduces the B11G3338N80D push-pull 3-stage fully integrated Doherty RF transistor being the carrier product for GEN11 Macro driver family covering all sub-6GHz frequency bands. This highly efficient multiband device covers a frequency range from 3.3 to 3.8GHz, enabling the implementation of next-generation high power and market-leading efficiency macro base stations.

Ampleon boosts GaN-on-SiC HEMT transistor performance with the release of Generation 3 Feb 22, 2022

Ampleon announced the release of two new broadband GaN-on-SiC HEMT transistors in the power classes of 30 Watts CLF3H0060(S)-30, 100 Watts CLF3H0035(S)-100. These high linearity devices are the initial products from our Generation 3 GaN-SiC HEMT process recently qualified and released to production.