Ampleon announced it will participate in the IEEE International Microwave Symposium (IMS) held in Boston, Massachusetts, USA to introduce its wide variety of new LDMOS and GaN solutions targeting telecom, aerospace and defence, NCC, ISM, cooking and defrosting applications.
Ampleon has released the first of a family of RF power devices based upon its Advanced Rugged Technology (ART) derivative of the proven 9th generation high voltage LDMOS process technology. The process has been developed to enable the implementation of extremely rugged transistors with operating voltages of up to 65V.
Ampleon today announced a high-efficiency 750W RF power transistor. The BLF0910H9LS750P has a best-in-class efficiency of 72.5% at 915MHz and a rugged design that makes it ideal for industrial and professional RF energy applications.
Ampleon today announced the 500-Watt BLC2425M10LS500P LDMOS RF power transistor designed for pulsed and CW applications operating in the 2400 MHz to 2500 MHz frequency range, suitable for use in a wide range of industrial, consumer and professional cooking RF energy applications.