Ampleon announced two additions to its 9th generation line-up of high-performance 50V Si LDMOS high-efficiency RF power transistors. Designed for use in ultra-high-power RF power amplifiers, capable of delivering hundreds of kilowatts, the BLF978P and the BLF974P are highly efficient and have high gain characteristics.
Ampleon announced two additions to its 9th generation line-up of high-performance 50V Si LDMOS high-efficiency RF power transistors. Designed for use in ultra-high-power RF power amplifiers, capable of delivering hundreds of kilowatts, the BLF978P and the BLF974P are highly efficient and have high gain characteristics.
Ampleon released the BLP05H9S500P LDMOS-based power amplifier transistor designed for use in industrial heating, defrosting, plasma lighting and medical applications.
Ampleon launches its new line of 12V laterally diffused metal oxide semiconductor (LDMOS) transistors and bolsters up its land mobile radio portfolio. This new 12V LDMOS platform is based upon the proven 9th generation of Ampleon’s LDMOS technology and will target commercial, public safety and defense mobile radio applications.
Ampleon announced a significant presence at European Microwave Week 2019. On the booth (#B470), Ampleon will showcase a wide variety of new LDMOS and GaN solutions targeting 5G networks, aerospace and defence, non-cellular communications, industrial, scientific, medical, cooking and defrosting applications.
