Date: July 2, 2020
Nijmegen, The Netherlands, July 2, 2020 - Ampleon today announced two additions to its 9th generation line-up of high-performance 50V Si LDMOS high-efficiency RF power transistors. Designed for use in ultra-high-power RF power amplifiers, capable of delivering hundreds of kilowatts, the BLF978P and the BLF974P are highly efficient and have high gain characteristics.
Both power transistors offer an operating efficiency of up to 80 % at 225 MHz under Class AB operation. Energy efficiency is an extremely important aspect of kilowatt-output RF systems since the need for effective thermal management is a key design consideration. Also, industrial and scientific applications prioritize thermal design as a critical element to improve system reliability and deliver energy-efficient, cost-saving RF performance.
The transistors’ high power and gain ease the scaling of the amplifier to the high-power levels required by industrial and scientific applications. The 1,200 Watt BLF978P and the 500W BLF974P, typically offer a power gain of 25 dB at a frequency range of between 225 MHz to 700 MHz.
For further information and reader inquiries:
Natascha Jellema, Project Manager Corporate Communications,
Ampleon Netherlands B.V.,
Halfgeleiderweg 8, 6534 AV Nijmegen, The Netherlands,
Tel: +31 6 208 14 771,
Created in 2015, Ampleon is shaped by 50 years of RF power leadership and is set to exploit the full potential of data and energy transfer in RF. Ampleon has more than 1,650 employees worldwide, dedicated to creating optimal value for customers. Its innovative, yet consistent portfolio offers products and solutions for a wide range of applications, such as mobile broadband infrastructure, radio & TV broadcasting, CO2 lasers & plasma, MRI, particle accelerators, radar & air-traffic control, non-cellular communications, RF cooking & defrosting, RF heating and plasma lighting. For details on the leading global partner in RF Power, visit www.ampleon.com