Power LDMOS transistor

750 W LDMOS power transistor in SOT539 push pull package for accelerator applications at a frequency of 1.3 GHz.

Features and benefits

  • High efficiency
  • Excellent ruggedness
  • Excellent thermal stability
  • Easy power control
  • Integrated dual sided ESD protection enables excellent off-state isolation
  • High flexibility with respect to pulse formats
  • Internally matched for ease of use
  • For RoHS compliance see the product details on the Ampleon website


  • Accelerator applications at the frequency of 1.3 GHz


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Power LDMOS transistor



Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1300 MHz
PL(1dB) nominal output power at 1 dB gain compression 750 W
Test signal: Pulsed RF
VDS drain-source voltage 1.3 GHz [0] 50 V
Gp power gain 1.3 GHz [0] 19 dB
ηD drain efficiency 1.3 GHz [0] 62 %
PL output power 1.3 GHz [0] 750 W
Test signal: CW
VDS drain-source voltage 1.3 GHz [0] 50 V
Gp power gain 1.3 GHz [0] 17 dB
ηD drain efficiency 1.3 GHz [0] 62.5 %
PL output power 1.3 GHz [0] 700 W

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
sot539b_po Bulk Pack Active Standard Marking BLF13H9LS750PU
(9349 601 79112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source


Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLF13H9LS750P BLF13H9LS750PU BLF13H9LS750P Always Pb-free 1 1
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Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF13H9LS750P 9349 601 79112 BLF13H9LS750PU DigiKey Buy Request samples

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