B11G2327N70D
Download datasheet This product has been discontinued.Click here for discontinuation information.
B11G2327N70D
Download datasheet
This product has been discontinued.
Click here for discontinuation information.
The replacement is: B11G2327N71D
The replacement is: B11G2327N71D
LDMOS 2-stage integrated Doherty MMIC
The B11G2327N70D is a dual path 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as general purpose driver in the frequency range 2300 MHz to 2700 MHz. Available in PQFN outline.
Features and benefits
- Integrated input splitter
- Integrated output combiner
- 20 Ω output impedance thanks to integrated pre-match
- High linearity
- Designed for large RF and instantaneous bandwidth operation
- Independent control of carrier and peaking bias
- Integrated bias gate switch
- Integrated ESD protection
- Source impedance 50 Ω; high power gain
- For RoHS compliance see the product details on the Ampleon website
Applications
- Macrocell base station driver
- Microcell base station
- 5G mMIMO
- W-CDMA/LTE
- Active antenna
- General purpose applications
Parametrics
Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|
frange | frequency range | 2300 | 2700 | MHz | ||
PL(3dB) | nominal output power at 3 dB gain compression | 80 | W | |||
Test signal: Pulsed CW | ||||||
VDS | drain-source voltage | [0] [1] | 28 | V | ||
Gp | power gain | PL = 5 W (37 dBm) [0] [1] | 27.5 | 30 | 33.5 | dB |
ηD | drain efficiency | PL = PL(3dB) [0] [1] | 46 | 54 | % | |
ηD | drain efficiency | PL = 5 W (37 dBm) [0] [1] | 16 | 22 | % | |
RLin | input return loss | [0] [1] | -15 | -10 | dB |
Package / Packing
All type numbers in the table below are discontinued.
Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
---|---|---|---|---|---|---|---|
B11G2327N70D | PQFN 12x7 (PQFN-12x7-36-1) |
pqfn-12x7-36-1_po | TR13; 1500-fold; 24 mm; dry pack | Discontinued | Standard Marking |
B11G2327N70DX (9349 604 69525) |
|
TR7; 300-fold; 24 mm; dry pack | Discontinued | Standard Marking |
B11G2327N70DYZ (9349 604 69535) |
Discontinuation information
Type number | Ordering code (12NC) | Last-time buy date | Last-time delivery date | Replacement product | DN Notice | Status | Comments |
---|---|---|---|---|---|---|---|
B11G2327N70D | 9349 604 69525 | 2023-10-30 | 2023-10-31 | B11G2327N71D | 202310003DN | Discontinued | |
B11G2327N70D | 9349 604 69535 | 2023-10-30 | 2023-10-31 | B11G2327N71D | 202310003DN | Discontinued |
Pinning info
Pin | Symbol | Description | Simplified outline | Graphic symbol |
---|---|---|---|---|
1 | GND | ground | ||
2 | VDS2_A/decoupling | drain-source voltage of final stages of section A | ||
3 | c.t.g. | connect to ground | ||
4 | VGS(carr) | gate-source voltage of carrier | ||
5 | VGS(peak) | gate-source voltage of peaking | ||
6 | VDS1_A | drain-source voltage of driver stages of section A | ||
7 | GND | ground | ||
8 | n.c. | not connected | ||
9 | PA_e | PA enable trigger signal, 0 V to 5 V, IDq-bias ON/OFF corresponds to logic HIGH/LOW | ||
10 | VDD(5V) | supply voltage (5 V) | ||
11 | GND | ground | ||
12 | RF_IN_A | RF input of section A | ||
13 | GND | ground | ||
14 | RF_IN_B | RF input of section B | ||
15 | GND | ground | ||
16 | VDD(5V) | supply voltage (5 V) | ||
17 | PA_e | PA enable trigger signal, 0 V to 5 V, IDq-bias ON/OFF corresponds to logic HIGH/LOW | ||
18 | n.c. | not connected | ||
19 | GND | ground | ||
20 | VDS1_B | drain-source voltage of driver stages of section B | ||
21 | VGS(peak) | gate-source voltage of peaking | ||
22 | VGS(carr) | gate-source voltage of carrier | ||
23 | c.t.g. | connect to ground | ||
24 | VDS2_B/decoupling | drain-source voltage of final stages of section B | ||
25 | GND | ground | ||
26, 27, 28, 29, 30 | RF_OUT_B | RF output of section B | ||
31 | GND | ground | ||
32, 33, 34, 35, 36 | RF_OUT_A | RF output of section A |
Documentation
Title | Type | Date | |
---|---|---|---|
LDMOS 2-stage integrated Doherty MMIC | Data sheet | 2022-04-07 | |
Mounting and soldering of RF transistors in overmolded plastic packages | Application note | 2023-07-24 | |
Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
Packages for RF power transistors | Leaflet | 2024-10-25 | |
LDMOS ruggedness reliability | Other type | 2017-03-28 | |
Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
Title | Type | Date | |
---|---|---|---|
Printed-Circuit Board (PCB) B11G2327N70D (Data sheet) | Design support | 2022-01-19 |