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101 products found for "art"
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BLF368
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262A1 balanced flange package, with two ceramic caps. The mounting flange provides the common source connection for the transistors.
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- Withdrawn
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ART35FE
Based on Advanced Rugged Technology (ART) a 35 W LDMOS transistor for ISM application has been designed. This unmatched device covers a frequency range of 1 MHz to 650 MHz.
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ART2K0FE
Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.
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ART1K6PH
Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.
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ART150PE
Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz
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ART700FH
Based on Advanced Rugged Technology (ART), this 700 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and non cellular communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.
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ART1K6FH
Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 425 MHz.
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ART150FE
Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor hasbeen designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz.
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ART2K0PE
Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.
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ART450FE
Based on Advanced Rugged Technology (ART), this 450 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz.
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ART800PE
Based on Advanced Rugged Technology (ART), this 800 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz.
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ART1K6PHG
Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.
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ART1K6FHG
Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 425 MHz.
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ART1K6FHS
Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 425 MHz.
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ART150PEG
Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz
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ART700FHG
Based on Advanced Rugged Technology (ART), this 700 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and non cellular communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.
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ART2K0FES
Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.
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ART700FHS
Based on Advanced Rugged Technology (ART), this 700 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and non cellular communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.
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ART2K0FEG
Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.
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ART2K0PEG
Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.
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ART800PEG
Based on Advanced Rugged Technology (ART), this 800 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz.
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ART2K0TFES
Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.
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ART2K0TFEG
Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.
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BLM6G22-30
30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead (SOT834-1).
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- Withdrawn
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BLM6G10-30
This product has been discontinued. Click here for discontinuation information.
The replacement is: BLM8G0710S-30PB30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz. Available in Gull Wing for surface mount (SOT822-1) or flat lead (SOT834-1)
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- Withdrawn
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BLD6G21L-50
The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution using Ampleon’s state of the art GEN6 LDMOS technology. This device is perfectly suited for TD-SCDMA base station applications at frequencies from 2010 MHz to 2025 MHz. The main and peak device, input splitter and output combiner are integrated in a single package. This package consists of one gate and drain lead and two extra leads of which one is used for biasing the peak amplifier and the other is not connected. It only requires the proper input/output match and bias setting as with a normal class-AB transistor.
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BLD6G22L-50
The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using Ampleon’s state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequencies from 2110 MHz to 2170 MHz. The main and peak device, input splitter and output combiner are integrated in a single package. This package consists of one gate and drain lead and two extra leads of which one is used for biasing the peak amplifier and the other is not connected. It only requires the proper input/output match and bias setting as with a normal class-AB transistor.
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BLM6G22-30G
This product has been discontinued. Click here for discontinuation information.
The replacement is: BLM7G1822S-40PBG30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead (SOT834-1).
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- Withdrawn
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BLM6G10-30G
30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz. Available in Gull Wing for surface mount (SOT822-1) or flat lead (SOT834-1)
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BLF6G22S-45
45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
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- Withdrawn
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BLD6G21LS-50
The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution using Ampleon’s state of the art GEN6 LDMOS technology. This device is perfectly suited for TD-SCDMA base station applications at frequencies from 2010 MHz to 2025 MHz. The main and peak device, input splitter and output combiner are integrated in a single package. This package consists of one gate and drain lead and two extra leads of which one is used for biasing the peak amplifier and the other is not connected. It only requires the proper input/output match and bias setting as with a normal class-AB transistor.
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BLD6G22LS-50
The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using Ampleon’s state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequencies from 2110 MHz to 2170 MHz. The main and peak device, input splitter and output combiner are integrated in a single package. This package consists of one gate and drain lead and two extra leads of which one is used for biasing the peak amplifier and the other is not connected. It only requires the proper input/output match and bias setting as with a normal class-AB transistor.
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B10G3741N55D
The B10G3741N55D is a 3-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as a final stage for small cells and massive MIMO applications in the frequency range from 3700 MHz to 4100 MHz. Available in PQFN outline.
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BLF6G22LS-75
75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
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- Withdrawn
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B10G3438N55D
The B10G3438N55D is a 3-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as a final stage for small cells and massive MIMO applications in the frequency range from 3400 MHz to 3800 MHz. Available in PQFN outline.
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B11G3338N81D
The B11G3338N81D is a dual section 3-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range 3300 MHz to 3800 MHz. Available in PQFN outline.
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B10G2327N55D
The B10G2327N55D is a 2-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This device is perfectly suited as general purpose driver or mMIMO final in the frequency range from 2300 MHz to 2700 MHz. Available in PQFN outline.
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B11G1822N60D
The B11G1822N60D is a dual section 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range 1800 MHz to 2200 MHz. Available in PQFN outline.
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B11G3338N80D
The B11G3338N80D is a dual section 3-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range 3300 MHz to 3800 MHz. Available in PQFN outline.
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B11G3742N81D
The B11G3742N81D is a dual section 3-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range 3700 MHz to 4200 MHz. Available in PQFN outline.
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B11G2327N70D
The B11G2327N70D is a dual path 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as general purpose driver in the frequency range 2300 MHz to 2700 MHz. Available in PQFN outline.
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BLF13H9L750P
750 W LDMOS power transistor in SOT539 push pull package for accelerator applications at a frequency of 1.3 GHz.
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B11G2327N71D
The B11G2327N71D is a dual path 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as general purpose driver in the frequency range 2300 MHz to 2700 MHz. Available in PQFN outline.
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B10H0710N40D
The B10H0710N40D is a dual section 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art 50 V LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range 700 MHz to 1 GHz. Available in LGA outline.
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BLM9D2327-25B
This product has been discontinued. Click here for discontinuation information.
The replacement is: BLM9D2327-26BThe BLM9D2327-25B is a 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 2300 MHz to 2700 MHz. Available in PQFN outline.
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BLM9D2327-26B
The BLM9D2327-26B is a thermally enhanced 2-stage fully integrated MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 2300 MHz to 2700 MHz. Available in PQFN outline.
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BLM9D1822-30B
The BLM9D1822-30B is a 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1800 MHz to 2200 MHz. Available in PQFN outline.
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BLM7G22S-60PB
The BLM7G22S-60PB(G) is a dual path 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This device is perfectly suited as general purpose driver in the frequency range from 2100 MHz to 2200 MHz. Available in gull wing or flat lead outline.
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BLF13H9LS750P
750 W LDMOS power transistor in SOT539 push pull package for accelerator applications at a frequency of 1.3 GHz.
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BLM7G24S-30BG
The BLM7G24S-30BG is a 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This device is perfectly suited as general purpose driver in the frequency range from 2100 MHz to 2400 MHz. Available in gull wing.
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B10G3336N16DL
The B10G3336N16DL is a 3-stage 16 W fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner, and output matching are integrated in a single package. This multiband device is perfectly suited as a general-purpose device in the frequency range from 3300 MHz to 3600 MHz. Available in LGA outline.
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B10G4750N12DL
The B10G4750N12DL is a 3-stage 12 W fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner, and output matching are integrated in a single package. This multiband device is perfectly suited as a general purpose device in the frequency range from 4700 MHz to 5000 MHz. Available in LGA outline.
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BLM9D2325-20AB
This product has been discontinued. Click here for discontinuation information.
The replacement is: BLM9D2327-26BThe BLM9D2325-20AB is a 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a final device in massive MIMO or small cell applications in the frequency range from 2300 MHz to 2500 MHz. Available in PQFN outline.
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BLM9D2527-20AB
This product has been discontinued. Click here for discontinuation information.
The replacement is: BLM9D2327-26BThe BLM9D2527-20AB is a 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a final device in massive MIMO or small cell applications in the frequency range from 2500 MHz to 2700 MHz. Available in PQFN outline.
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BLM9D1819-08AM
The BLM9D1819-08AM is a 2-stage 8 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 1805 MHz to 1880 MHz. Available in LGA outline.
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BLM9D2022-08AM
The BLM9D2022-08AM is a 2-stage 8 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 2110 MHz to 2170 MHz. Available in LGA outline.
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BLM9D2324-08AM
The BLM9D2324-08AM is a 2-stage 8 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 2300 MHz to 2400 MHz. Available in LGA outline.
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BLM9D1920-08AM
The BLM9D1920-08AM is a 2-stage 8 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 1880 MHz to 2025 MHz. Available in LGA outline.
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BLM9D2527-09AM
The BLM9D2527-09AM is a 2-stage 9 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 2496 MHz to 2700 MHz. Available in LGA outline.
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BLM9D0708-05AM
The BLM9D0708-05AM is a 1-stage 5 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 728 MHz to 821 MHz. Available in LGA outline.
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BLM9D3437-12AM
The BLM9D3437-12AM is a 3-stage 12 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 3400 MHz to 3700 MHz. Available in LGA outline.
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BLM9D0910-05AM
The BLM9D0910-05AM is a 1-stage 5 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 859 MHz to 960 MHz. Available in LGA outline.
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BLM9D3336-12AM
The BLM9D3336-12AM is a 3-stage 12 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 3300 MHz to 3650 MHz. Available in LGA outline.
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BLM9D3538-12AM
The BLM9D3538-12AM is a 3-stage 12 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 3400 MHz to 3800 MHz. Available in LGA outline.
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BLM7G22S-60PBG
This product has been discontinued. Click here for discontinuation information.
The replacement is: BLM8D1822S-50PBGThe BLM7G22S-60PB(G) is a dual path 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This device is perfectly suited as general purpose driver in the frequency range from 2100 MHz to 2200 MHz. Available in gull wing or flat lead outline.
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- Withdrawn
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BLM9D3438-16AM
The BLM9D3438-16AM is a 3-stage 16 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 3400 MHz to 3800 MHz. Available in LGA outline.
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BLM9D3740-16AM
The BLM9D3740-16AM is a 3-stage 16 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 3700 MHz to 4000 MHz. Available in LGA outline.
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BLM9D3336-14AM
The BLM9D3336-14AM is a 3-stage 14 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 3300 MHz to 3650 MHz. Available in LGA outline.
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BLM9D3842-16AM
The BLM9D3842-16AM is a 3-stage 16 W fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as a device in the frequency range from 3800 MHz to 4200 MHz. Available in LGA outline.
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BLM10D3740-35AB
The BLM10D3740-35AB is a 3-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as a final stage for small cells and massive MIMO applications in the frequency range from 3700 MHz to 4000 MHz. Available in PQFN outline.
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BLM10D2327-40AB
The BLM10D2327-40AB is a 2-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as a final stage for small cells and massive MIMO applications in the frequency range from 2500 MHz to 2700 MHz. Available in PQFN outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
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BLM8D1822S-50PB
The BLM8D1822S-50PB(G) is a dual section, 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN8 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or flat lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
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BLM8G0710S-15PB
The BLM8G0710S-15PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
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BLM8AD22S-60ABG
The BLM8AD22S-60ABG is a dual section solution using Ampleon’s state of the art GEN8 LDMOS technology. It includes a 45 W 2-stage fully integrated Doherty MMIC in section A, and a 15 W, 2-stage MMIC in section B, allowing a 3-way 1:2:1 Doherty when both sections are externally combined. The carrier and peaking devices, input splitter and output combiner, of the 2-stage fully integrated Doherty MMIC of section A are integrated in package. This device is perfectly suited as final stage in massive MIMO or small cell applications in the frequency range from 2100 MHz to 2200 MHz. Available in gull wing.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
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BLM9H0610S-60PG
The BLM9H0610S-60PG is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN9 HV LDMMIC technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 600 MHz to 1000 MHz. Available in gull wing outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
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BLM8G0710S-60PB
The BLM8G0710S-60PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Discontinued
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BLM7G1822S-40AB
The BLM7G1822S-40AB(G) is a dual section, asymmetric, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as small cell final in Doherty configuration, or as general purpose driver in the 1805 MHz to 2170 MHz frequency range. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Discontinued
-
BLM8G0710S-45AB
The BLM8G0710S-45AB(G) is a dual section, asymmetric, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as small cell final stage in Doherty configuration, or as general purpose driver in the 700 MHz to 1000 MHz frequency range. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Discontinued
-
BLM7G1822S-80AB
This product has been discontinued. Click here for discontinuation information.
The replacement is: BLM9D1822S-60PBGThe BLM7G1822S-80AB(G) is a dual section, asymmetric, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as small cell final stage in Doherty configuration, or as general purpose driver in the 1805 MHz to 2170 MHz frequency range. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Discontinued
-
BLM7G1822S-20PB
This product has been discontinued. Click here for discontinuation information.
The replacement is: BLM7G1822S-40PBThe BLM7G1822S-20PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Discontinued
-
BLM9D2327S-50PB
The BLM9D2327S-50PB(G) is a dual section, 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN9 LDMOS technology. For each section, the carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 2300 MHz to 2700 MHz. Available in gull wing or flat lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
-
BLM7G1822S-80PB
The BLM7G1822S-80PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Discontinued
-
BLM8G0710S-30PB
The BLM8G0710S-30PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
-
BLM7G1822S-40PB
The BLM7G1822S-40PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
-
BLM10D3438-35AB
The BLM10D3438-35AB is a 3-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as a final stage for small cells and massive MIMO applications in the frequency range from 3400 MHz to 3800 MHz. Available in PQFN outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
-
BLM10D1822-60ABG
The BLM10D1822-60ABG is a 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or mMIMO final in the frequency range from 1800 MHz to 2200 MHz. Available in gull wing.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
-
BLM10D3438-70ABG
The BLM10D3438-70ABG is a 3-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or mMIMO final in the frequency range from 3400 MHz to 3800 MHz. Available in gull wing.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
-
BLM10D2327-60ABG
The BLM10D2327-60ABG is a 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS MMIC technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This device is perfectly suited as general purpose driver or mMIMO final in the frequency range from 2300 MHz to 2700 MHz. Available in gull wing.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
-
BLM8D1822S-50PBG
The BLM8D1822S-50PB(G) is a dual section, 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN8 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or flat lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
-
BLM7G1822S-40PBG
The BLM7G1822S-40PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
-
BLM8G0710S-15PBG
The BLM8G0710S-15PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
-
BLM10D1822-61ABG
The BLM10D1822-61ABG is a 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver in the frequency range from 1800 MHz to 2200 MHz. Available in gull wing.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
-
BLM9D1822S-60PBG
The BLM9D1822S-60PBG is a dual section, 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. For each section, the carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1800 MHz to 2200 MHz. Available in gull wing outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
-
BLM8G0710S-45ABG
The BLM8G0710S-45AB(G) is a dual section, asymmetric, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as small cell final stage in Doherty configuration, or as general purpose driver in the 700 MHz to 1000 MHz frequency range. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Discontinued
-
BLM7G1822S-40ABG
The BLM7G1822S-40AB(G) is a dual section, asymmetric, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as small cell final in Doherty configuration, or as general purpose driver in the 1805 MHz to 2170 MHz frequency range. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Discontinued
-
BLM8G0710S-60PBG
The BLM8G0710S-60PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Discontinued
-
BLM7G1822S-20PBG
This product has been discontinued. Click here for discontinuation information.
The replacement is: BLM7G1822S-40PBGThe BLM7G1822S-20PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Discontinued
-
BLM7G1822S-80ABG
This product has been discontinued. Click here for discontinuation information.
The replacement is: BLM9D1822S-60PBGThe BLM7G1822S-80AB(G) is a dual section, asymmetric, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as small cell final stage in Doherty configuration, or as general purpose driver in the 1805 MHz to 2170 MHz frequency range. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Discontinued
-
BLM9D2327S-50PBG
The BLM9D2327S-50PB(G) is a dual section, 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN9 LDMOS technology. For each section, the carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 2300 MHz to 2700 MHz. Available in gull wing or flat lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
-
BLM8G0710S-30PBG
The BLM8G0710S-30PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
-
BLM7G1822S-80PBG
The BLM7G1822S-80PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or straight lead outline.
Learn more- Datasheet
- Documentation
- Design support
- Quality
- Production
562 documents found for "art"
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ART150PE 65V 20mA S-parameter Data (S-parameter)
ART150PE 65V 20mA S-parameter Data
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ART2K0FE(S)(G) Cauer Thermal Transient Impedance Model (Simulation model)
ART2K0FE(S)(G) Cauer Thermal Transient Impedance Model
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ART700FH(S) 65V 50mA S-parameter Data (S-parameter)
ART700FH(S) 65V 50mA S-parameter Data
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ART2K0FE(S)(G) Foster Thermal Transient Impedance Model (Simulation model)
ART2K0FE(S)(G) Foster Thermal Transient Impedance Model
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ART1K6FH(S) 50V 100mA S-parameter Data (S-parameter)
ART1K6FH(S) 50V 100mA S-parameter Data
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ART2K0FE(S) 65V 100mA S-parameter Data (S-parameter)
ART2K0FE(S) 65V 100mA S-parameter Data
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ART1K6PH 50V 100mA S-parameter Data (S-parameter)
ART1K6PH 50V 100mA S-parameter Data
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ART150FE 65V 300mA S-parameter Data (S-parameter)
ART150FE 65V 300mA S-parameter Data
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ART2K0TFES 65V 100mA S-parameter Data (S-parameter)
ART2K0TFES 65V 100mA S-parameter Data
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ART450FE Foster Thermal Transient Impedance Model (Simulation model)
ART450FE Foster Thermal Transient Impedance Model
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ART450FE 65V 25mA S-parameter Data (S-parameter)
ART450FE 65V 25mA S-parameter Data
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ART450FE Cauer Thermal Transient Impedance Model (Simulation model)
ART450FE Cauer Thermal Transient Impedance Model
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ART2K0TFES(G) Foster Thermal Transient Impedance Model (Simulation model)
ART2K0TFES(G) Foster Thermal Transient Impedance Model
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ART2K0TFES(G) Cauer Thermal Transient Impedance Model (Simulation model)
ART2K0TFES(G) Cauer Thermal Transient Impedance Model
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ART2K0PE(G) Cauer Thermal Transient Impedance Model (Simulation model)
ART2K0PE(G) Cauer Thermal Transient Impedance Model
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ART2K0PE 65V 100mA S-parameter Data (S-parameter)
ART2K0PE 65V 100mA S-parameter Data
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ART2K0PE(G) Foster Thermal Transient Impedance Model (Simulation model)
ART2K0PE(G) Foster Thermal Transient Impedance Model
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ART800PE(G) Foster Thermal Transient Impedance Model (Simulation model)
ART800PE(G) Foster Thermal Transient Impedance Model
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ART800PE(G) Cauer Thermal Transient Impedance Model (Simulation model)
ART800PE(G) Cauer Thermal Transient Impedance Model
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ART800PE 65V 50mA S-parameter Data (S-parameter)
ART800PE 65V 50mA S-parameter Data
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Air cavity plastic earless flanged package; 8 leads (Outline drawing)
Air cavity plastic earless flanged package; 8 leads
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Plastic, heatsink small outline package; 16 leads (Outline drawing)
Plastic, heatsink small outline package; 16 leads
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Ampleon Plug-and-play evaluation tools for RF energy (Leaflet)
Ampleon Plug-and-play evaluation tools for RF energy
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Air cavity plastic earless flanged package; 4 leads (Outline drawing)
Air cavity plastic earless flanged package; 4 leads
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LDMOS L-band radar power transistor (Data sheet)
LDMOS L-band radar power transistor
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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Efficiency Improvement of LDMOS Transistors for Base Stations: Towards the Theoretical Limit (Other type)
Efficiency Improvement of LDMOS Transistors for Base Stations: Towards the Theoretical Limit
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Signal generator for RF energy solutions (Data sheet)
Signal generator for RF energy solutions
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Plastic, heatsink small outline package; 4 leads (Outline drawing)
Plastic, heatsink small outline package; 4 leads
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Plastic, heatsink small outline package; 4 leads (flat) (Outline drawing)
Plastic, heatsink small outline package; 4 leads (flat)
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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Ampleon RF Solid State Cooking Whitepaper (White paper)
Ampleon RF Solid State Cooking Whitepaper
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Plastic, heatsink small outline package; 4 leads (Outline drawing)
Plastic, heatsink small outline package; 4 leads
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Biasing Asymmetrical Doherty RF Power Transistor (Other type)
Biasing Asymmetrical Doherty RF Power Transistor
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HVQFN28: plastic thermal enhanced very thin quad flat package; no leads; 28 terminals; body 5 x 5 x 0.85 mm (Outline drawing)
HVQFN28: plastic thermal enhanced very thin quad flat package; no leads; 28 terminals; body 5 x 5 x 0.85 mm
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LDMOS S-band radar power transistor (Data sheet)
LDMOS S-band radar power transistor
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LDMOS S-band radar power transistor (Data sheet)
LDMOS S-band radar power transistor
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Footprint for reflow soldering SOT1352-1 (Reflow soldering)
Footprint for reflow soldering SOT1352-1
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LDMOS S-band radar power transistor (Data sheet)
LDMOS S-band radar power transistor
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LDMOS S-band radar power transistor (Data sheet)
LDMOS S-band radar power transistor
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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Footprint for reflow soldering SOT834-1 (Reflow soldering)
Footprint for reflow soldering SOT834-1
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Overmolded plastic earless flanged package; 4 leads (Outline drawing)
Overmolded plastic earless flanged package; 4 leads
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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Plastic, heatsink small outline package; 16 leads(flat) (Outline drawing)
Plastic, heatsink small outline package; 16 leads(flat)
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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Manual Efficiency Bandwidth Calculators Manual (Design support)
Manual Efficiency Bandwidth Calculators Manual
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Earless flanged ceramic package; 2 leads (Outline drawing)
Earless flanged ceramic package; 2 leads
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LDMOS S-band radar power transistor (Data sheet)
LDMOS S-band radar power transistor
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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Air cavity plastic earless flanged package; 8 leads (Outline drawing)
Air cavity plastic earless flanged package; 8 leads
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High Voltage RF LDMOS Technology for Broadcast Applications (Other type)
High Voltage RF LDMOS Technology for Broadcast Applications
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Plastic, heatsink small outline package; 4 leads (flat) (Outline drawing)
Plastic, heatsink small outline package; 4 leads (flat)
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LDMOS S-band radar power transistor (Data sheet)
LDMOS S-band radar power transistor
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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Air cavity plastic earless flanged package; 6 leads (Outline drawing)
Air cavity plastic earless flanged package; 6 leads
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Plastic; heatsink small outline package; 2 leads (Outline drawing)
Plastic; heatsink small outline package; 2 leads
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Plastic earless flanged cavity package; 4 leads (Outline drawing)
Plastic earless flanged cavity package; 4 leads
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Plastic, heatsink small outline package; 8 leads (Outline drawing)
Plastic, heatsink small outline package; 8 leads
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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Air cavity plastic earless flanged package; 8 leads (Outline drawing)
Air cavity plastic earless flanged package; 8 leads
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Plastic earless flanged cavity package; 4 leads (Outline drawing)
Plastic earless flanged cavity package; 4 leads
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Plastic, heatsink small outline package; 16 leads (flat) (Outline drawing)
Plastic, heatsink small outline package; 16 leads (flat)
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RF Driven Plasma Lighting: the Next Revolution in Light Sources (Other type)
RF Driven Plasma Lighting: the Next Revolution in Light Sources
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Air cavity plastic earless flanged package; 6 leads (Outline drawing)
Air cavity plastic earless flanged package; 6 leads
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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Plastic thermal enhanced package; no leads; 20 terminals; body 7.0 x 7.0 x 0.98 mm (Outline drawing)
Plastic thermal enhanced package; no leads; 20 terminals; body 7.0 x 7.0 x 0.98 mm
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Plastic thermal enhanced package; no leads; 20 terminals; body 7.0 x 7.0 x 0.98 mm (Outline drawing)
Plastic thermal enhanced package; no leads; 20 terminals; body 7.0 x 7.0 x 0.98 mm
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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ART1K6PH Model for ADS (Keysight Advanced Design System) (Simulation model)
ART1K6PH Model for ADS (Keysight Advanced Design System)
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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Air cavity plastic earless flanged package; 6 leads (Outline drawing)
Air cavity plastic earless flanged package; 6 leads
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Plastic, heatsink small outline package; 8 leads (Outline drawing)
Plastic, heatsink small outline package; 8 leads
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Flanged balanced ceramic package; 2 mounting holes; 4 leads (Outline drawing)
Flanged balanced ceramic package; 2 mounting holes; 4 leads
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EuMW2020 Student Design Competition Thrust 2 (MarCom)
EuMW2020 Student Design Competition Thrust 2
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Printed-Circuit Board (PCB) ART150FE (Data sheet) (Design support)
Printed-Circuit Board (PCB) ART150FE (Data sheet)
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Printed-Circuit Board (PCB) ART35FE (Data sheet) (Design support)
Printed-Circuit Board (PCB) ART35FE (Data sheet)
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ART150FE Model for ADS (Keysight Advanced Design System) (Simulation model)
ART150FE Model for ADS (Keysight Advanced Design System)
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ART35FE Model for ADS (Keysight Advanced Design System) (Simulation model)
ART35FE Model for ADS (Keysight Advanced Design System)
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Overmolded plastic earless flanged package; 6 leads (Outline drawing)
Overmolded plastic earless flanged package; 6 leads
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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Plastic earless flanged cavity package; 4 leads (Outline drawing)
Plastic earless flanged cavity package; 4 leads
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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Air cavity plastic earless flanged package; 6 leads (Outline drawing)
Air cavity plastic earless flanged package; 6 leads
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EuMW2019 Student Design Competition Thrust 2 (MarCom)
EuMW2019 Student Design Competition Thrust 2
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PQFN20: plastic thermal enhanced quad flat package; no leads; 20 terminals; body 8.0 x 8.0 x 2.1 mm (Outline drawing)
PQFN20: plastic thermal enhanced quad flat package; no leads; 20 terminals; body 8.0 x 8.0 x 2.1 mm
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LDMOS Technology for RF Power Amplifiers (Other type)
LDMOS Technology for RF Power Amplifiers
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Plastic, heatsink small outline package; 4 leads (flat) (Outline drawing)
Plastic, heatsink small outline package; 4 leads (flat)
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Footprint for reflow soldering SOT1179-2 (Reflow soldering)
Footprint for reflow soldering SOT1179-2
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LDMOS L-band radar power transistor (Data sheet)
LDMOS L-band radar power transistor
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Air cavity plastic earless flanged package; 2 leads (Outline drawing)
Air cavity plastic earless flanged package; 2 leads
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Footprint for reflow soldering SOT822-1 (Reflow soldering)
Footprint for reflow soldering SOT822-1
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Footprint information for reflow soldering of SOT1371-1 package (Reflow soldering)
Footprint information for reflow soldering of SOT1371-1 package
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Plastic, heatsink small outline package; 4 leads (flat) (Outline drawing)
Plastic, heatsink small outline package; 4 leads (flat)
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Air cavity plastic earless flanged package; 6 leads (Outline drawing)
Air cavity plastic earless flanged package; 6 leads
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Air cavity plastic earless flanged package; 6 leads (Outline drawing)
Air cavity plastic earless flanged package; 6 leads
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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Plastic; heatsink small outline package; 2 leads (flat) (Outline drawing)
Plastic; heatsink small outline package; 2 leads (flat)
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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Air cavity plastic earless flanged package; 6 leads (Outline drawing)
Air cavity plastic earless flanged package; 6 leads
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LDMOS S-band radar power transistor (Data sheet)
LDMOS S-band radar power transistor
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Overmolded plastic earless flanged package; 4 leads (Outline drawing)
Overmolded plastic earless flanged package; 4 leads
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BLP8G27-5 Model for ADS (Keysight Advanced Design System) (Simulation model)
BLP8G27-5 Model for ADS (Keysight Advanced Design System)
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BLF989E(S) Model for ADS (Keysight Advanced Design System) (Simulation model)
BLF989E(S) Model for ADS (Keysight Advanced Design System)
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BLC2425M10LS250 Model for ADS (Keysight Advanced Design System) (Simulation model)
BLC2425M10LS250 Model for ADS (Keysight Advanced Design System)
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BLC10G18XS-552AVT Model for ADS (Keysight Advanced Design System) (Simulation model)
BLC10G18XS-552AVT Model for ADS (Keysight Advanced Design System)
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ART150PEG Simulation Example for Cadence AWR Microwave Office® (Simulation model)
ART150PEG Simulation Example for Cadence AWR Microwave Office®
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ART150PE Simulation Example for Cadence AWR Microwave Office® (Simulation model)
ART150PE Simulation Example for Cadence AWR Microwave Office®
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ART150PEG Model for Cadence AWR Microwave Office® (Simulation model)
ART150PEG Model for Cadence AWR Microwave Office®
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ART150PE Model for Cadence AWR Microwave Office® (Simulation model)
ART150PE Model for Cadence AWR Microwave Office®
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BLC10G22XS-551AVT Model for ADS (Keysight Advanced Design System) (Simulation model)
BLC10G22XS-551AVT Model for ADS (Keysight Advanced Design System)
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BLC10G22XS-600AVT Model for ADS (Keysight Advanced Design System) (Simulation model)
BLC10G22XS-600AVT Model for ADS (Keysight Advanced Design System)
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BLF989(S) Model for ADS (Keysight Advanced Design System) (Simulation model)
BLF989(S) Model for ADS (Keysight Advanced Design System)
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BLC10G18XS-551AVT Model for ADS (Keysight Advanced Design System) (Simulation model)
BLC10G18XS-551AVT Model for ADS (Keysight Advanced Design System)
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BLF0910H9LS600 Model for ADS (Keysight Advanced Design System) (Simulation model)
BLF0910H9LS600 Model for ADS (Keysight Advanced Design System)
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BLF984P(S) Model for ADS (Keysight Advanced Design System) (Simulation model)
BLF984P(S) Model for ADS (Keysight Advanced Design System)
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BLC9G27LS-151AV Model for ADS (Keysight Advanced Design System) (Simulation model)
BLC9G27LS-151AV Model for ADS (Keysight Advanced Design System)
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Ampleon Statement of Compliance to REACH SVHC (Other type)
Ampleon Statement of Compliance to REACH SVHC
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BLF647P(S) Model for ADS (Keysight Advanced Design System) (Simulation model)
BLF647P(S) Model for ADS (Keysight Advanced Design System)
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Thermal characteristics of ART LDMOS power transistors (Application note)
Thermal characteristics of ART LDMOS power transistors
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Earless flanged ceramic package; 6 leads (Outline drawing)
Earless flanged ceramic package; 6 leads
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ART700FHG Model for ADS (Keysight Advanced Design System) (Simulation model)
ART700FHG Model for ADS (Keysight Advanced Design System)
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ART2K0FE(S) Model for ADS (Keysight Advanced Design System) (Simulation model)
ART2K0FE(S) Model for ADS (Keysight Advanced Design System)
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ART1K6FHG Model for ADS (Keysight Advanced Design System) (Simulation model)
ART1K6FHG Model for ADS (Keysight Advanced Design System)
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ART2K0FEG Model for ADS (Keysight Advanced Design System) (Simulation model)
ART2K0FEG Model for ADS (Keysight Advanced Design System)
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ART150PE Model for ADS (Keysight Advanced Design System) (Simulation model)
ART150PE Model for ADS (Keysight Advanced Design System)
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ART150PEG Model for ADS (Keysight Advanced Design System) (Simulation model)
ART150PEG Model for ADS (Keysight Advanced Design System)
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ART1K6FH(S) Model for ADS (Keysight Advanced Design System) (Simulation model)
ART1K6FH(S) Model for ADS (Keysight Advanced Design System)
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Printed-Circuit Board (PCB) BLF989(S) (Data sheet) (Design support)
Printed-Circuit Board (PCB) BLF989(S) (Data sheet)
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HVSON16; Reel dry pack, SMD, 7"Q1/T1 standard product orientationOrderable part number ending ,515 or ZOrdering code (12NC) ending 515 (Packing)
HVSON16; Reel dry pack, SMD, 7"Q1/T1 standard product orientationOrderable part number ending ,515 or ZOrdering code (12NC) ending 515
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Air cavity plastic earless flanged package; 4 leadsReel dry pack, SMD, 13"Q2/T3 standard product orientationOrderable part number ending ,518 or YOrdering code (12NC) ending 518 (Packing)
Air cavity plastic earless flanged package; 4 leadsReel dry pack, SMD, 13"Q2/T3 standard product orientationOrderable part number ending ,518 or YOrdering code (12NC) ending 518
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Air cavity plastic earless flanged package; 8 leadsReel dry pack, SMD, 13"Q4/T2 standard product orientationOrderable part number ending ,518 or YOrdering code (12NC) ending 518 (Packing)
Air cavity plastic earless flanged package; 8 leadsReel dry pack, SMD, 13"Q4/T2 standard product orientationOrderable part number ending ,518 or YOrdering code (12NC) ending 518
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Plastic, heatsink small outline package; 16 leads (Outline drawing)
Plastic, heatsink small outline package; 16 leads
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Measurement results of a Class-AB design for the 3000 to 3100 MHz band with BLS9G2934LS-400 (Report)
Measurement results of a Class-AB design for the 3000 to 3100 MHz band with BLS9G2934LS-400
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Measurement results of the demo design with BLF974P optimized for 230-236 MHz (Report)
Measurement results of the demo design with BLF974P optimized for 230-236 MHz
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Measurement results of a Symmetric Ultra Wideband Doherty design with ART2K0FE for 170 to 240 MHz (Report)
Measurement results of a Symmetric Ultra Wideband Doherty design with ART2K0FE for 170 to 240 MHz
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Measurement results of a Class-AB design for the 410 to 460 MHz band with BLU9H0408L-800P (Report)
Measurement results of a Class-AB design for the 410 to 460 MHz band with BLU9H0408L-800P
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Measurement results of BLP15H9S100 in Board #AR1924 tuned for the 360-450 MHz band at 50 V (Report)
Measurement results of BLP15H9S100 in Board #AR1924 tuned for the 360-450 MHz band at 50 V
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Measurement results of BLP15M9S100 in Board #AR202140 tested over 400-470 MHz at 28 V (Report)
Measurement results of BLP15M9S100 in Board #AR202140 tested over 400-470 MHz at 28 V
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Measurement results of ART2K0FE in Board #AR192069 tested over 123-133 MHz at 50-62 V (Report)
Measurement results of ART2K0FE in Board #AR192069 tested over 123-133 MHz at 50-62 V
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Measurement results of BLP15M9S30 in Board #AR192035 tuned for the 30-520 MHz band at 28-32 V (Report)
Measurement results of BLP15M9S30 in Board #AR192035 tuned for the 30-520 MHz band at 28-32 V
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Measurement results of a wideband demoboard design with ART35FE in the 60-130 MHz band (Report)
Measurement results of a wideband demoboard design with ART35FE in the 60-130 MHz band
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Measurement results of a Class-AB design for the 3100 to 3500 MHz band with BLS9G2735LS-50 (Report)
Measurement results of a Class-AB design for the 3100 to 3500 MHz band with BLS9G2735LS-50
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Measurement results of a 1500 W 352 MHz CW power amplifier with ART2K0FE and PCB integrated coplanar baluns (Report)
Measurement results of a 1500 W 352 MHz CW power amplifier with ART2K0FE and PCB integrated coplanar baluns
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Measurement results of a class-AB design for BLF978P in a demo optimized for 500 MHz (Report)
Measurement results of a class-AB design for BLF978P in a demo optimized for 500 MHz
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Measurement results of a Class-AB design with BLF978P in a demo optimized for 644-650 MHz (Report)
Measurement results of a Class-AB design with BLF978P in a demo optimized for 644-650 MHz
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Measurement results of a Class-AB design for the 1700-1850 MHz band with BLP15H9S100 (Report)
Measurement results of a Class-AB design for the 1700-1850 MHz band with BLP15H9S100
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Measurement results of a Class-AB design for the 88-108 MHz band with ART2K0FE (Report)
Measurement results of a Class-AB design for the 88-108 MHz band with ART2K0FE
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Measurement results of a Class-AB design for the 88-108 MHz band with ART1K6FH (Report)
Measurement results of a Class-AB design for the 88-108 MHz band with ART1K6FH
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Measurement results of a Class-AB design for the 740-800 MHz band with BLP9LA25SG (Report)
Measurement results of a Class-AB design for the 740-800 MHz band with BLP9LA25SG
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Measurement results of a Class-AB design for the 768-870 MHz band with BLP15H9S10 (Report)
Measurement results of a Class-AB design for the 768-870 MHz band with BLP15H9S10
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Measurement results of a Class-AB design for the 380-450 MHz band with BLP5LA55S (Report)
Measurement results of a Class-AB design for the 380-450 MHz band with BLP5LA55S
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Measurement results of a Class-AB broadband design for the 474-714 MHz.band with BLF989 (Report)
Measurement results of a Class-AB broadband design for the 474-714 MHz.band with BLF989
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Measurement results of ART2K0FE in Board #AR212091 tested over 270-310 MHz at 62 V (Report)
Measurement results of ART2K0FE in Board #AR212091 tested over 270-310 MHz at 62 V
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Measurement results of ART150FE in Board #AR202075 tuned for 100-140 MHz at 62 V (Report)
Measurement results of ART150FE in Board #AR202075 tuned for 100-140 MHz at 62 V
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Measurement results of BLP15H9S30 in Board #AR192182 tuned for 360-450 MHz at 50 V (Report)
Measurement results of BLP15H9S30 in Board #AR192182 tuned for 360-450 MHz at 50 V
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Measurement results of BLF984P in Board #AR192177 tuned for the 30-520 MHz band at 28 V (Report)
Measurement results of BLF984P in Board #AR192177 tuned for the 30-520 MHz band at 28 V
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Measurement results of BLP15H9S30G in Board #AR212046 tested over 1200-1400 MHz at 40-50 V (Report)
Measurement results of BLP15H9S30G in Board #AR212046 tested over 1200-1400 MHz at 40-50 V
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Measurement results of BLP15H9S10G in Board #AR222005 tuned for 2-30 MHz band at 50 V (Report)
Measurement results of BLP15H9S10G in Board #AR222005 tuned for 2-30 MHz band at 50 V
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Measurement results of BLF647P in Board #AR212016 tuned for 30-520 MHz band at 28 V (Report)
Measurement results of BLF647P in Board #AR212016 tuned for 30-520 MHz band at 28 V
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Measurement results of linear demo with ART1K6 at 2-30 MHz (Report)
Measurement results of linear demo with ART1K6 at 2-30 MHz
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Measurement results of BLP15H9S30 in Board #AR212058 tested over the 30-600 MHz band at 35-50 V (Report)
Measurement results of BLP15H9S30 in Board #AR212058 tested over the 30-600 MHz band at 35-50 V
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Measurement results of a Class-AB design for the 1200 to 1400 MHz band with CLL3H0914L(S)-700 (Report)
Measurement results of a Class-AB design for the 1200 to 1400 MHz band with CLL3H0914L(S)-700
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Measurement results of ART1K6FH in Board #AR212082 tuned for 2-30 MHz band at 50 V (Report)
Measurement results of ART1K6FH in Board #AR212082 tuned for 2-30 MHz band at 50 V
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Measurement results of a Class-AB design for the 30-512 MHz band with BLF974P (Report)
Measurement results of a Class-AB design for the 30-512 MHz band with BLF974P
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Measurement results of BLP15H9S100 at 50V over the 30-900 MHz band (Report)
Measurement results of BLP15H9S100 at 50V over the 30-900 MHz band
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Measurement results of a Class-AB design for the 750-950 MHz band with BLP15H9S30 (Report)
Measurement results of a Class-AB design for the 750-950 MHz band with BLP15H9S30
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Measurement results of BLP15H9S30 measured at 50 V over 30-1000 MHz (Report)
Measurement results of BLP15H9S30 measured at 50 V over 30-1000 MHz
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Measurement results of BLP15H9S10 in Board #AR192151 tested over 380-450 MHz at 24-32 V (Report)
Measurement results of BLP15H9S10 in Board #AR192151 tested over 380-450 MHz at 24-32 V
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Measurement results of a Class-E Amplifier design for 2 MHz with ART2K0FE (Report)
Measurement results of a Class-E Amplifier design for 2 MHz with ART2K0FE
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Measurement results of a Class-AB amplifier design for the 13-41 MHz band with ART2K0FE (Report)
Measurement results of a Class-AB amplifier design for the 13-41 MHz band with ART2K0FE
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Measurement results of a Class-AB design for the 325-352 MHz band with BLP15H9S10G (Report)
Measurement results of a Class-AB design for the 325-352 MHz band with BLP15H9S10G
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Measurement results of a Class-AB design for the 80-100 MHz band with ART2K0FE (Report)
Measurement results of a Class-AB design for the 80-100 MHz band with ART2K0FE
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Measurement results of a Symmetric Ultra Wideband Doherty design with ART2K0FE for 165 to 235 MHz (Report)
Measurement results of a Symmetric Ultra Wideband Doherty design with ART2K0FE for 165 to 235 MHz
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Measurement results of a wideband performance of CLF3H0035-100 in the 500-2500 MHz band (Report)
Measurement results of a wideband performance of CLF3H0035-100 in the 500-2500 MHz band
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Measurement results of the demo BLP2425M10S250P in 2400-2500 MHz (Report)
Measurement results of the demo BLP2425M10S250P in 2400-2500 MHz
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Measurement results of ART700FH in Board #AR212069 tested over the 30-520 MHz band at 50 V (Report)
Measurement results of ART700FH in Board #AR212069 tested over the 30-520 MHz band at 50 V
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Measurement results of a DVB-T digital TV transmitter design with BLF989 at 470-494 MHz (Report)
Measurement results of a DVB-T digital TV transmitter design with BLF989 at 470-494 MHz
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Measurement results of a demoboard design with ART35FE in the 81-108 MHz band (Report)
Measurement results of a demoboard design with ART35FE in the 81-108 MHz band
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Measurement results of BLF989 in Board #AR192124 tuned for 470-700 MHz at 50 V (Report)
Measurement results of BLF989 in Board #AR192124 tuned for 470-700 MHz at 50 V
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Measurement results of a wideband demoboard design with ART35FE in the 10-54 MHz band (Report)
Measurement results of a wideband demoboard design with ART35FE in the 10-54 MHz band
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Measurement results of a concept module based on ART2K0 optimized for 60 to 85 MHz pulsed and CW applications (Report)
Measurement results of a concept module based on ART2K0 optimized for 60 to 85 MHz pulsed and CW applications
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Measurement results of ART1K6FH in Board #AR212099 tuned for 79-85 MHz at 50 V (Report)
Measurement results of ART1K6FH in Board #AR212099 tuned for 79-85 MHz at 50 V
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Measurement results of a Class-AB design for the 960-1215 MHz band with CLL3H0914L(S)-700 (Report)
Measurement results of a Class-AB design for the 960-1215 MHz band with CLL3H0914L(S)-700
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Measurement results of CW design with BLP0427M9S20 at 30-512 MHz (Report)
Measurement results of CW design with BLP0427M9S20 at 30-512 MHz
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Measurement results of a demoboard design with BLF974P optimized for 225 MHz (Report)
Measurement results of a demoboard design with BLF974P optimized for 225 MHz
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Measurement results of an A-symmetric Ultra Wideband Doherty design with BLF989E for 470 to 700 MHz (Report)
Measurement results of an A-symmetric Ultra Wideband Doherty design with BLF989E for 470 to 700 MHz
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Measurement results of a Class-AB design for the 902-928 MHz band with BLP0427M9S20 (Report)
Measurement results of a Class-AB design for the 902-928 MHz band with BLP0427M9S20
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Measurement results of a Class-AB design for the 2900 to 3500 MHz band with BLS9G2735L-50 (Report)
Measurement results of a Class-AB design for the 2900 to 3500 MHz band with BLS9G2735L-50
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Measurement results of a Class-AB design for the 325-352 MHz band with BLP15H9S100G (Report)
Measurement results of a Class-AB design for the 325-352 MHz band with BLP15H9S100G
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Measurement results of a Class-AB design for the 2900 to 3400 MHz band with BLS9G2934LS-400 (Report)
Measurement results of a Class-AB design for the 2900 to 3400 MHz band with BLS9G2934LS-400
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Measurement results of a Class-AB design for the 1030 MHz to 1090 MHz band with BLA9H0912L(S)-250 (Report)
Measurement results of a Class-AB design for the 1030 MHz to 1090 MHz band with BLA9H0912L(S)-250
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Measurement results of a Class-AB design for the 1300 MHz band with BLF13H9LS750P (Report)
Measurement results of a Class-AB design for the 1300 MHz band with BLF13H9LS750P
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Measurement results of a Class-AB design for the 2700 to 3100 MHz band with BLS9G2731LS-400 (Report)
Measurement results of a Class-AB design for the 2700 to 3100 MHz band with BLS9G2731LS-400
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Measurement results of CLF3H0060-30 at 50 V over 500-2700 MHz (Report)
Measurement results of CLF3H0060-30 at 50 V over 500-2700 MHz
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Measurement results of a 2400-2500 MHz demo with BLC2425M10LS500P (Report)
Measurement results of a 2400-2500 MHz demo with BLC2425M10LS500P
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Measurement results of BLF0910H9LS600 in Board #AR182075 tuned for the 902-928 MHz band at 50 V (Report)
Measurement results of BLF0910H9LS600 in Board #AR182075 tuned for the 902-928 MHz band at 50 V
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Measurement results of CW design with BLP15M9S30 at 915 MHz (Report)
Measurement results of CW design with BLP15M9S30 at 915 MHz
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Measurement results of a class E generator design for the 40 MHz band with ART150PEG (Report)
Measurement results of a class E generator design for the 40 MHz band with ART150PEG
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Measurement results of a demoboard design with BLF978P optimized for 352 MHz (Report)
Measurement results of a demoboard design with BLF978P optimized for 352 MHz
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Measurement results of BLF978P in Board #AR202059 tuned for 500 MHz at 45 V (Report)
Measurement results of BLF978P in Board #AR202059 tuned for 500 MHz at 45 V
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Measurement results of a 40 MHz generator with ART150PEG (Report)
Measurement results of a 40 MHz generator with ART150PEG
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Measurement results of a 6.78 MHz Class EF2 Generator with ART150PEG (Report)
Measurement results of a 6.78 MHz Class EF2 Generator with ART150PEG
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Measurement results of a Class-AB broadband amplifier design with BLP0408H9S30 for 470 to 860 MHz (Report)
Measurement results of a Class-AB broadband amplifier design with BLP0408H9S30 for 470 to 860 MHz
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Measurement results of a Class-AB broadband amplifier design with BLF989 for 470 to 700 MHz (Report)
Measurement results of a Class-AB broadband amplifier design with BLF989 for 470 to 700 MHz
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Measurement results of a Class-AB design for the 2700 to 2900 MHz band with BLS9G2729LS-350 (Report)
Measurement results of a Class-AB design for the 2700 to 2900 MHz band with BLS9G2729LS-350
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Measurement results of a Class-AB design for the 1030 to 1090 MHz band (TACAN) with BLA9H0912L(S)-700 (Report)
Measurement results of a Class-AB design for the 1030 to 1090 MHz band (TACAN) with BLA9H0912L(S)-700
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Measurement results of a Class-AB design for the 1450-1550 MHz band with BLP0427M9S20G (Report)
Measurement results of a Class-AB design for the 1450-1550 MHz band with BLP0427M9S20G
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Measurement results of a Class-AB design for the 2900 to 3300 MHz band with BLS9G2735L-50 (Report)
Measurement results of a Class-AB design for the 2900 to 3300 MHz band with BLS9G2735L-50
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Measurement results of a Class-AB design for the 150-170 MHz band with BLP5LA55S (Report)
Measurement results of a Class-AB design for the 150-170 MHz band with BLP5LA55S
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Measurement results of a Class-AB design for the 225-400 MHz band with BLP9LA25S (Report)
Measurement results of a Class-AB design for the 225-400 MHz band with BLP9LA25S
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Measurement results of a Class-AB design for the 3100 to 3500 MHz band with BLS9G3135LS-400 (Report)
Measurement results of a Class-AB design for the 3100 to 3500 MHz band with BLS9G3135LS-400
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Measurement results of a Class-AB design for the 800-870 MHz band with BLP9LA25S (Report)
Measurement results of a Class-AB design for the 800-870 MHz band with BLP9LA25S
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Measurement results of a Class-AB design for the 960 MHz to 1215 MHz band (TACAN) with BLA9H0912L(S)-250 (Report)
Measurement results of a Class-AB design for the 960 MHz to 1215 MHz band (TACAN) with BLA9H0912L(S)-250
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Measurement results of a Class-AB design for the 960 to 1215 MHz band with BLA9H0912L(S)-1200P (Report)
Measurement results of a Class-AB design for the 960 to 1215 MHz band with BLA9H0912L(S)-1200P
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Measurement results of a demo designed for DVB-T digital TV transmitter application with BLP15H9S100 at 470-700 MHz (Report)
Measurement results of a demo designed for DVB-T digital TV transmitter application with BLP15H9S100 at 470-700 MHz
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Measurement results of a demoboard design with ART150FE at 64 MHz (Report)
Measurement results of a demoboard design with ART150FE at 64 MHz
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Measurement results of a Class-AB planar balun design for the 41 MHz band with ART2K0FE (Report)
Measurement results of a Class-AB planar balun design for the 41 MHz band with ART2K0FE
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Measurement results of a demoboard design with BLM2425M9S20 in the 2.4-2.5 GHz band (Report)
Measurement results of a demoboard design with BLM2425M9S20 in the 2.4-2.5 GHz band
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Measurement results of a Class-AB design for the 960 to 1215 MHz band with BLA9H0912L(S)-1200P (Report)
Measurement results of a Class-AB design for the 960 to 1215 MHz band with BLA9H0912L(S)-1200P
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Measurement results of a demoboard design with BLF0910H9LS750P at 902-928 MHz (Report)
Measurement results of a demoboard design with BLF0910H9LS750P at 902-928 MHz
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Measurement results of a demoboard design with ART150FE at 128 MHz (Report)
Measurement results of a demoboard design with ART150FE at 128 MHz
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Measurement results of CW design with BLP0427M9S20 at 88-108 MHz (Report)
Measurement results of CW design with BLP0427M9S20 at 88-108 MHz
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Measurement results of a Class-AB design for the 1025-1150 MHz band with BLP15H9S30 (Report)
Measurement results of a Class-AB design for the 1025-1150 MHz band with BLP15H9S30
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Measurement results of planar balun design at 60 MHz with ART2K0FE (Report)
Measurement results of planar balun design at 60 MHz with ART2K0FE
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Measurement results of ART2K0FE in Board #AR212087 tested over 430-435 MHz at 62 V (Report)
Measurement results of ART2K0FE in Board #AR212087 tested over 430-435 MHz at 62 V
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Measurement results of BLP05H9S500P in Board #AR212045 tuned for 430-450 MHz at 50 V (Report)
Measurement results of BLP05H9S500P in Board #AR212045 tuned for 430-450 MHz at 50 V
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Measurement results of a 2400-2500 MHz demo with BLC2425M10LS250 (Report)
Measurement results of a 2400-2500 MHz demo with BLC2425M10LS250
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Dual flat no leads plastic package (Outline drawing)
Dual flat no leads plastic package
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Dual flat no leads plastic package (Outline drawing)
Dual flat no leads plastic package
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Measurement results of a Class-AB design for the 3000 to 3100 MHz band with BLS9G2735L-50 (Report)
Measurement results of a Class-AB design for the 3000 to 3100 MHz band with BLS9G2735L-50
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Measurement results of ART700FH measured at 50 V over 24-30 MHz (Report)
Measurement results of ART700FH measured at 50 V over 24-30 MHz
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LDMOS 1-stage integrated Doherty MMIC (Data sheet)
LDMOS 1-stage integrated Doherty MMIC
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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LDMOS 1-stage integrated Doherty MMIC (Data sheet)
LDMOS 1-stage integrated Doherty MMIC
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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Printed-Circuit Board (PCB) ART1K6FH(S)(G) (Data sheet) (Design support)
Printed-Circuit Board (PCB) ART1K6FH(S)(G) (Data sheet)
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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Ampleon RF Solid State Cooking Whitepaper (White paper)
Ampleon RF Solid State Cooking Whitepaper
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RF Power Transistors for Broadband Applications White Paper (White paper)
RF Power Transistors for Broadband Applications White Paper
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Ampleon’s advancements with ruggedized Si LDMOS transistors of up to 2 kW of RF Power for 1 through 400 MHz Whitepaper (White paper)
Ampleon’s advancements with ruggedized Si LDMOS transistors of up to 2 kW of RF Power for 1 through 400 MHz Whitepaper
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Doherty Architectures in UHF Whitepaper (White paper)
Doherty Architectures in UHF Whitepaper
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Ampleon’s Ultra Wideband Doherty (UWD) for TV Transmitters White Paper (White paper)
Ampleon’s Ultra Wideband Doherty (UWD) for TV Transmitters White Paper
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Thermal characteristics of GaN power transistors (Application note)
Thermal characteristics of GaN power transistors
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Extremely Rugged 50 V LDMOS Devices Capture ISM and Broadcast Markets Whitepaper (White paper)
Extremely Rugged 50 V LDMOS Devices Capture ISM and Broadcast Markets Whitepaper
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Printed-Circuit Board (PCB) ART2K0FE(S)(G) (Data sheet) (Design support)
Printed-Circuit Board (PCB) ART2K0FE(S)(G) (Data sheet)
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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Model Library Manual for Cadence AWR Microwave Office® (Simulation model)
Model Library Manual for Cadence AWR Microwave Office®
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Plastic; heatsink small outline package; 2 leads (Outline drawing)
Plastic; heatsink small outline package; 2 leads
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Plastic; heatsink small outline package; 2 leads (flat) (Outline drawing)
Plastic; heatsink small outline package; 2 leads (flat)
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L-band internally pre-matched GaN-SiC HEMT (Data sheet)
L-band internally pre-matched GaN-SiC HEMT
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Printed-Circuit Board (PCB) ART150PE(G) (Data sheet) (Design support)
Printed-Circuit Board (PCB) ART150PE(G) (Data sheet)
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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Printed-Circuit Board (PCB) ART700FH(S)(G) (Data sheet) (Design support)
Printed-Circuit Board (PCB) ART700FH(S)(G) (Data sheet)
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Ampleon Sustainability Report 2021 (Other type)
Ampleon Sustainability Report 2021
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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ART700FH Model for ADS (Keysight Advanced Design System) (Simulation model)
ART700FH Model for ADS (Keysight Advanced Design System)
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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Printed-Circuit Board (PCB) ART1K6PH(G) (Data sheet) (Design support)
Printed-Circuit Board (PCB) ART1K6PH(G) (Data sheet)
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Earless flanged balanced ceramic package; 4 leads (Outline drawing)
Earless flanged balanced ceramic package; 4 leads
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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BLA9G1011L(S)-300 Model for ADS (Keysight Advanced Design System) (Simulation model)
BLA9G1011L(S)-300 Model for ADS (Keysight Advanced Design System)
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BLF9G38LS-90P Model for ADS (Keysight Advanced Design System) (Simulation model)
BLF9G38LS-90P Model for ADS (Keysight Advanced Design System)
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BLL8H0514L(S)-130 Model for ADS (Keysight Advanced Design System) (Simulation model)
BLL8H0514L(S)-130 Model for ADS (Keysight Advanced Design System)
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BLS9G3135L(S)-115 Model for ADS (Keysight Advanced Design System) (Simulation model)
BLS9G3135L(S)-115 Model for ADS (Keysight Advanced Design System)
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BLF189XRB(S) Model for ADS (Keysight Advanced Design System) (Simulation model)
BLF189XRB(S) Model for ADS (Keysight Advanced Design System)
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BLF881(S) Model for ADS (Keysight Advanced Design System) (Simulation model)
BLF881(S) Model for ADS (Keysight Advanced Design System)
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Measurement results of a Class-AB/B design for the 380-460 MHz band with the BLP9LA25S (Report)
Measurement results of a Class-AB/B design for the 380-460 MHz band with the BLP9LA25S
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Measurement results of a Class-AB design for the 1030-1090 MHz with the BLA9G1011L(S)-300(G) (Report)
Measurement results of a Class-AB design for the 1030-1090 MHz with the BLA9G1011L(S)-300(G)
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BLL8H1214L(S)-250 Model for ADS (Keysight Advanced Design System) (Simulation model)
BLL8H1214L(S)-250 Model for ADS (Keysight Advanced Design System)
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BLP15M7160P Model for ADS (Keysight Advanced Design System) (Simulation model)
BLP15M7160P Model for ADS (Keysight Advanced Design System)
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BLP05M7200 Model for ADS (Keysight Advanced Design System) (Simulation model)
BLP05M7200 Model for ADS (Keysight Advanced Design System)
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Measurement results of the narrowband demo of BLF0910H9LS750P optimized for 915 MHz (Report)
Measurement results of the narrowband demo of BLF0910H9LS750P optimized for 915 MHz
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Assembly and Usage Guidelines of RF Pallets (Application note)
Assembly and Usage Guidelines of RF Pallets
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Measurement results of a Class-AB design for the 3100 to 3500 MHz band with the BLS9G3135L(S)-115 (Report)
Measurement results of a Class-AB design for the 3100 to 3500 MHz band with the BLS9G3135L(S)-115
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Measurement results of a demoboard design for the BLP05H9S500P optimized for 500 W, 433 MHz (Report)
Measurement results of a demoboard design for the BLP05H9S500P optimized for 500 W, 433 MHz
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Mounting and Soldering of RF transistors in Air Cavity Packages (Application note)
Mounting and Soldering of RF transistors in Air Cavity Packages
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Uppsala University's BLF188XR single ended amplifier at 352 MHz (Application note)
Uppsala University's BLF188XR single ended amplifier at 352 MHz
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General PCB design and transistor mounting guidelines to achieve optimum performance with the BLF0910H9LS600 (Application note)
General PCB design and transistor mounting guidelines to achieve optimum performance with the BLF0910H9LS600
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Measurement results of a Class-AB design for the 1200 to 1400MHz band with the BLL9G1214LS-600 (Report)
Measurement results of a Class-AB design for the 1200 to 1400MHz band with the BLL9G1214LS-600
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Measurement results of a Class-AB design for the 352 MHz band with the BLF978P (Report)
Measurement results of a Class-AB design for the 352 MHz band with the BLF978P
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Earless flanged ceramic package; 6 leads (Outline drawing)
Earless flanged ceramic package; 6 leads
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Earless flanged ceramic package; 6 leads (Outline drawing)
Earless flanged ceramic package; 6 leads
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Measurement results of a 41 MHz amplifier with the ART450FE (Report)
Measurement results of a 41 MHz amplifier with the ART450FE
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ART450FE Model for Cadence AWR Microwave Office® (Simulation model)
ART450FE Model for Cadence AWR Microwave Office®
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CLF3H0060(S)-10 Model for ADS (Keysight Advanced Design System) (Simulation model)
CLF3H0060(S)-10 Model for ADS (Keysight Advanced Design System)
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ART2K0TFES Model for ADS (Keysight Advanced Design System) (Simulation model)
ART2K0TFES Model for ADS (Keysight Advanced Design System)
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ART2K0TFEG Model for ADS (Keysight Advanced Design System) (Simulation model)
ART2K0TFEG Model for ADS (Keysight Advanced Design System)
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ART450FE Model for ADS (Keysight Advanced Design System) (Simulation model)
ART450FE Model for ADS (Keysight Advanced Design System)
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Measurement results of the BLP15M9S70 at 28-32 V over 950-1200 MHz (Report)
Measurement results of the BLP15M9S70 at 28-32 V over 950-1200 MHz
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Measurement results of a Class-AB design for the 1030-1090 MHz band with BLP15H9S10 (Report)
Measurement results of a Class-AB design for the 1030-1090 MHz band with BLP15H9S10
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Measurement results of the ART700PEG in Board #AR212139 tuned for 88-108 MHz at 50 V (Report)
Measurement results of the ART700PEG in Board #AR212139 tuned for 88-108 MHz at 50 V
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Printed-Circuit Board (PCB) ART2K0TFES(G) (Data sheet) (Design support)
Printed-Circuit Board (PCB) ART2K0TFES(G) (Data sheet)
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Printed-Circuit Board (PCB) ART450FE (Data sheet) (Design support)
Printed-Circuit Board (PCB) ART450FE (Data sheet)
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BLF944P Model for ADS (Keysight Advanced Design System) (Simulation model)
BLF944P Model for ADS (Keysight Advanced Design System)
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ART2K0PE Model for ADS (Keysight Advanced Design System) (Simulation model)
ART2K0PE Model for ADS (Keysight Advanced Design System)
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ART2K0PE Simulation Example for Cadence AWR Microwave Office® (Simulation model)
ART2K0PE Simulation Example for Cadence AWR Microwave Office®
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ART2K0PE Model for Cadence AWR Microwave Office® (Simulation model)
ART2K0PE Model for Cadence AWR Microwave Office®
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Ampleon Sustainability Report 2022 (Other type)
Ampleon Sustainability Report 2022
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ART2K0TFES Simulation Example for Cadence AWR Microwave Office® (Simulation model)
ART2K0TFES Simulation Example for Cadence AWR Microwave Office®
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Mounting and soldering of RF transistors in overmolded plastic packages (Application note)
Mounting and soldering of RF transistors in overmolded plastic packages
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ART2K0TFES Model for Cadence AWR Microwave Office® (Simulation model)
ART2K0TFES Model for Cadence AWR Microwave Office®
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Printed-Circuit Board (PCB) ART2K0PE(G) (Data sheet) (Design support)
Printed-Circuit Board (PCB) ART2K0PE(G) (Data sheet)
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Measurement results of BLF944P in board #AR232026 tested over 30-520 MHz at 28 V (Report)
Measurement results of BLF944P in board #AR232026 tested over 30-520 MHz at 28 V
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BLF2425M9L30(S) Model for ADS (Keysight Advanced Design System) (Simulation model)
BLF2425M9L30(S) Model for ADS (Keysight Advanced Design System)
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LDMOS 3-stage integrated Doherty MMIC (Data sheet)
LDMOS 3-stage integrated Doherty MMIC
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LDMOS 2-stage integrated Doherty MMIC (Data sheet)
LDMOS 2-stage integrated Doherty MMIC
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ART800PE Model for Cadence AWR Microwave Office® (Simulation model)
ART800PE Model for Cadence AWR Microwave Office®
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Measurement results of a 1600 W 352 MHz CW power amplifier using the LDMOS ART2K0PE power transistor and PCB integrated coplanar baluns (Report)
Measurement results of a 1600 W 352 MHz CW power amplifier using the LDMOS ART2K0PE power transistor and PCB integrated coplanar baluns
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Measurement results of a Class AB planar balun design for the 41 MHz band with the ART2K0PE (Report)
Measurement results of a Class AB planar balun design for the 41 MHz band with the ART2K0PE
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Measurement results of a Class AB design for the 88-108 MHz band with the ART2K0PE (Report)
Measurement results of a Class AB design for the 88-108 MHz band with the ART2K0PE
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Printed-Circuit Board (PCB) ART800PE(G) (Data sheet) (Design support)
Printed-Circuit Board (PCB) ART800PE(G) (Data sheet)
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Measurement results of a demo board at 13.56 MHz with the ART35FE (Report)
Measurement results of a demo board at 13.56 MHz with the ART35FE
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Measurement results of 57-63 MHz amplifier with the ART800PE (Report)
Measurement results of 57-63 MHz amplifier with the ART800PE
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Measurement results of a concept module based on ART2K0 optimized for 13.5 MHz, 27 MHz and 41 MHz pulsed and CW applications (Report)
Measurement results of a concept module based on ART2K0 optimized for 13.5 MHz, 27 MHz and 41 MHz pulsed and CW applications
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ART800PE Model for ADS (Keysight Advanced Design System) (Simulation model)
ART800PE Model for ADS (Keysight Advanced Design System)
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ART450FE Simulation Example for Cadence AWR Microwave Office® (Simulation model)
ART450FE Simulation Example for Cadence AWR Microwave Office®
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Plastic, heatsink small outline package; 4 leads (flat) (Outline drawing)
Plastic, heatsink small outline package; 4 leads (flat)
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Our Company, Businesses, Technologies and Products (Leaflet)
Our Company, Businesses, Technologies and Products
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RF Power Solutions for Mobile Broadband (Brochure)
RF Power Solutions for Mobile Broadband
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RF Power solutions for Broadcast, Navigation and Safety Radio, Industrial, Scientific and Medical applications (Brochure)
RF Power solutions for Broadcast, Navigation and Safety Radio, Industrial, Scientific and Medical applications
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针对下述应用的RF 功率解决方案 广播, 航空航天和国防 工业、科学和医疗 (Brochure)
针对下述应用的RF 功率解决方案 广播, 航空航天和国防 工业、科学和医疗
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RF Power application reports for Broadcast, Navigation and Safety Radio, Industrial, Scientific and Medical applications (Brochure)
RF Power application reports for Broadcast, Navigation and Safety Radio, Industrial, Scientific and Medical applications
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No packages found for "art"
108 news items found for "art"
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Events 2016
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European Microwave Week (EuMW) 2016
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European Microwave Week (EuMW) 2018
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International Microwave Symposium (IMS) 2018
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International Exhibition for Information and Communications Technology (SVIAZ) 2018
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Events 2018
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Electronic Design Innovation Conference (EDI CON) 2018
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European Microwave Week (EuMW) 2017
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International Microwave Symposium (IMS) 2017
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Events 2017
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Electronic Design Innovation Conference (EDI CON) 2017
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Ampleon Brings RF Power Innovations Towards Industrial Heating Market
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Ampleon’s “New” standard for L Band, GaN-SiC HEMT
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Press Releases
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RF Power reference guide available for download
May 19, 2016
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ITAR-free S band SWaP optimised pallets speed time to market for radar applications
May 23, 2016
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Credit card sized 250 Watt 2.4-2.5 GHz reference design targets RF cooking and industrial heating applications
May 24, 2016
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Ampleon demonstrates Wideband System Solution featuring Xilinx DPD IP at IMS 2016
May 24, 2016
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Ampleon launch ultra compact two-stage Doherty amplifier for 4.5 G / LTE Advanced Pro applications
September 27, 2016
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Ampleon adds 1900 Watt LDMOS power transistor to its extremely rugged line-up
October 03, 2016
Ampleon adds 1900 Watt LDMOS power transistor to its extremely rugged line-up
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Ampleon extends line up of Gen 9 LDMOS RF transistors and pallets
October 04, 2016
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Fully Integrated Doherty Power Amplifier Devices Enhance Small Cell & mMIMO Driver Systems
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Ampleon cost-optimised 250W LDMOS for 2.45GHz ISM applications and solid-state cooking
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Highly efficient rugged 800-Watt LDMOS RF power transistor designed for long-range UHF radar systems
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New RF power transistors and ultra-wideband Doherty amplifiers for use in next-generation TV broadcast transmitters
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Ampleon highlights virtual IMS 2020 conference and exhibition plans
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Ampleon simplifies RF amplifier system design with launch of 600-Watt 915 MHz ISM pallet
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Ampleon releases “breakthrough” Si LDMOS devices reaching 80% efficiency for VHF and UHF applications
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Ampleon releases the industry’s most efficient 500-Watt LDMOS transistor operating in the 433 MHz band
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Ampleon stellt den robustesten 12V-LDMOS Breitband-HF-Leistungsverstärker für Mobilfunkanwendungen vor
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Ampleon launches the industry’s most rugged 12V LDMOS power amplifiers for land mobile radio
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Ampleon announces significant presence at European Microwave Week (EuMW) 2019
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Ampleon to showcase breakthrough RF power technology and present latest technical papers at IMS 2019
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埃赋隆宣布面向ISM应用推出业界最耐用的2kW RF功率LDMOS晶体管
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埃賦隆宣佈面向ISM應用推出業界最耐用的2kW RF功率LDMOS電晶體
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Ampleon annuncia il più robusto transistor di potenza RF da 2 KW in tecnologia LDMOS per applicazioni ISM
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Ampleon stellt den branchenweit robustesten 2KW HF-LDMOS-Transistor für ISM-Anwendungen vor
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Ampleon announces the industry’s most rugged 2KW RF power LDMOS transistor for ISM applications
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Transistor di potenza RF da 750 W a 915 MHz consente di progettare amplificatori di potenza più compatti
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Hocheffizienter 750 W-HF-Leistungstransistor ermöglicht bei 915 MHz kompaktere Leistungsverstärker-Designs
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High-efficiency 750W RF power transistor at 915 MHz enables more compact power amplifier designs
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Transistor RF a elevata potenza per applicazioni che utilizzano l'energia RF nei settori professionale e industriale
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Hochleistungs-HF-Transistor für industrielle und professionelle HF-Energieanwendungen
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High power RF transistor targets Industrial and Professional RF Energy applications
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Modulo compatto da 250 W a doppio stadio per applicazioni a 2,4 GHz con ingressi/uscite a 50 Ohm semplifica il processo di integrazione
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Kompaktes zweistufiges 250W/2,4GHz-Modul mit 50 Ω-Ein-/Ausgängen vereinfacht die Integration
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Compact 250 W dual-stage 2.4 GHz module with 50 Ohm input/outputs eases integration complexity
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Ampleon secures refinancing to drive growth
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Ampleon leads RF power efficiency with launch of 62% efficient Gen9HV LDMOS transistor for particle accelerators
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Highly efficient 1,600 Watt extremely rugged RF power transistor targets 50V FM radio broadcast applications
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Ampleon to showcase leading RF power products at European Microwave Week 2018
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Rugged 250 Watt RF PA transistor delivers 69 % energy efficiency and withstands VSWR 20:1 on all phases
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Ampleon launches first Gen9HV LDMOS 140 Watt RF PA transistor for UHF broadcast applications
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Ampleon announces IMS 2018 conference sessions and booth demonstration highlights
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Ampleon issues update on investor status
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200 Watt LDMOS matched input/output amplifier module speeds development of 433 MHz systems
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Ampleon launch ISM signal generator IC for RF energy applications
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埃賦隆半導體參加EDI CON 2018大會
荷蘭奈梅亨 – 埃賦隆半導體(Ampleon)今天宣佈其參加3月20日至3月22日在中國北京舉行的電子設計創新大會(EDI CON)的詳細資訊。
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Ampleon is showcasing several new products at the IEEE International Microwave Symposium 2022
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Ampleon extends isolator-free sub-6GHz line-ups with compact multistage Doherty MMIC drivers for 5G NR and 4G LTE Macro base station applications
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Ampleon boosts GaN-on-SiC HEMT transistor performance with the release of Generation 3
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Ampleon extends LDMOS base station and multi-carrier line up with the introduction of 400 W rugged Doherty RF power transistor
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埃赋隆半导体推出全新高功能通用宽带LDMOS晶体管,以适应广播电视、工业、科学和医疗应用
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埃賦隆半導體推出全新高功能通用寬頻LDMOS晶體管,以適應廣播電視、工業、科學和醫療應用
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Ampleon Introduces New Highly Versatile Wideband LDMOS Transistors to Address Broadcast, Industrial, Scientific and Medical Applications
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Ampleon opens RF Energy Competence Center in Hefei
October 04, 2016
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Ampleon participates in EDI CON 2018
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Ampleon 1 kW 2.4 GHz compact RF energy reference system targets industrial heating market and drives magnetron replacement
October 04, 2016
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Compact SOT502 ISM band RF PA transistor delivers 600 Watts for RF energy applications
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Wide-band 20 Watt single-stage driver yields high efficiency, gain and extremely low thermal resistance
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Update on investor structure
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Ampleon launches first devices using Gen9HV 50 V base station optimised process
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Ampleon delivers lower power consumption and increased efficiency for wireless infrastructure PAs
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Ampleon showcases LDMOS and GaN RF PA portfolio and high power RF solutions at IMS
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Ampleon showcases LDMOS and GaN RF PA portfolio and high power RF solutions at EDI CON
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Ampleon – il partner globale di riferimento per la potenza RF
December 07, 2015
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Ampleon - de toonaangevende leverancier van RF Power componenten
December 07, 2015
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Ampleon - the leading global partner in RF power
December 07, 2015
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Ampleon introduces GaN RF power transistors in 10 to 200W ratings
December 14, 2015
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Ampleons robuste LDMOS-HF-Leistungstransistoren für HF-, VHF- und ISM-Anwendungen stehen nun in kostengünstigen vergossenen Gehäusen bereit
January 13, 2016
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I transistor di potenza LDMOS RF a elevata affidabilità di Ampleon per applicazioni nelle bande HF, VHF e ISM sono ora disponibili in package plastico OMP di costo contenuto
January 13, 2016
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Ampleon’s extremely rugged LDMOS RF power transistors for HF, VHF and ISM applications now available in cost effective overmoulded packages
January 13, 2016
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Ampleon en HAS Hogeschool doen gezamenlijk onderzoek aan full spectrum verlichting voor tuinbouwtoepassingen
February 09, 2016
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Ampleon and HAS University collaborate on full spectrum lighting research for horticultural applications
February 09, 2016
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RF transistor delivers >50% efficiency at 150W DVB-T for ultra wideband asymmetrical Doherty applications
March 08, 2016
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Ampleon and Midea collaboration results in world’s first solid state oven
March 21, 2016
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Ampleon showcases RF energy innovations at EDI CON
April 07, 2016
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Ampleon präsentiert Innovationen beim IMS
April 14, 2016
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Ampleon stellt auf der European Microwave Week 2017 neue Produkte vor und hält Vorträge
April 14, 2016
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Ampleon rolls-out new products and presents technical papers at European Microwave Week 2017
April 14, 2016
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Ampleon showcases latest innovations at IMS
April 14, 2016
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앰플레온, 국제 마이크로웨이브 심포지엄(IMS)에서초고속 무선통신용 전력 증폭기 등 최신 기술 발표
April 14, 2016
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Ampleon 在 IMS(国际微波会议)上展出最新技术与产品
April 26, 2016
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アンプレオン、IMS (国際マイクロ波シンポジウム) で最新技術を展示
April 25, 2016
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1400 CW extremely rugged reliable RF transistor withstands VSWR > 65:1
May 03, 2016
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Ampleon GaN RF transistor family complements LDMOS portfolio with high-efficiency and wideband solutions for mobile broadband
May 12, 2016
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Ampleon GaN RF transistor family complements LDMOS portfolio with high-efficiency and wideband solutions for mobile broadband
May 17, 2016
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Ampleon unveils full portfolio of PA solutions for small cells and massive MIMO
May 18, 2016
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Amplify a Sustainable Future
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Student Design Competition at European Microwave Week (EuMW) 2020
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Events Archive
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Student Design Competition at European Microwave Week (EuMW) 2019
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European Microwave Week (EuMW) 2019
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Events
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International Microwave Symposium (IMS) 2023
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International Microwave Symposium (IMS) 2022
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International Microwave Symposium (IMS) 2019
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European Microwave Week (EuMW) 2023
145 pages found for "art"
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Events 2016
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European Microwave Week (EuMW) 2016
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Way of working
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Electronic B2B messaging at Ampleon
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Standards
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Terms and conditions of commercial sale, version USA
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Terms and conditions of commercial sale, version NL
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European Microwave Week (EuMW) 2018
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International Microwave Symposium (IMS) 2018
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International Exhibition for Information and Communications Technology (SVIAZ) 2018
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Events 2018
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Electronic Design Innovation Conference (EDI CON) 2018
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European Microwave Week (EuMW) 2017
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International Microwave Symposium (IMS) 2017
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Events 2017
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Electronic Design Innovation Conference (EDI CON) 2017
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Ampleon Brings RF Power Innovations Towards Industrial Heating Market
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Ampleon’s “New” standard for L Band, GaN-SiC HEMT
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Press Releases
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Supplier Quality Management
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Electronic Product Change Notification (ePCN)
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ISO Certification
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RF Power reference guide available for download
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ITAR-free S band SWaP optimised pallets speed time to market for radar applications
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Credit card sized 250 Watt 2.4-2.5 GHz reference design targets RF cooking and industrial heating applications
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Ampleon demonstrates Wideband System Solution featuring Xilinx DPD IP at IMS 2016
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Ampleon launch ultra compact two-stage Doherty amplifier for 4.5 G / LTE Advanced Pro applications
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Ampleon adds 1900 Watt LDMOS power transistor to its extremely rugged line-up
Ampleon adds 1900 Watt LDMOS power transistor to its extremely rugged line-up
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Ampleon extends line up of Gen 9 LDMOS RF transistors and pallets
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Fully Integrated Doherty Power Amplifier Devices Enhance Small Cell & mMIMO Driver Systems
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Ampleon cost-optimised 250W LDMOS for 2.45GHz ISM applications and solid-state cooking
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Highly efficient rugged 800-Watt LDMOS RF power transistor designed for long-range UHF radar systems
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New RF power transistors and ultra-wideband Doherty amplifiers for use in next-generation TV broadcast transmitters
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Ampleon highlights virtual IMS 2020 conference and exhibition plans
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Ampleon simplifies RF amplifier system design with launch of 600-Watt 915 MHz ISM pallet
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Ampleon releases “breakthrough” Si LDMOS devices reaching 80% efficiency for VHF and UHF applications
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Ampleon releases the industry’s most efficient 500-Watt LDMOS transistor operating in the 433 MHz band
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Ampleon stellt den robustesten 12V-LDMOS Breitband-HF-Leistungsverstärker für Mobilfunkanwendungen vor
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Ampleon launches the industry’s most rugged 12V LDMOS power amplifiers for land mobile radio
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Ampleon announces significant presence at European Microwave Week (EuMW) 2019
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Ampleon to showcase breakthrough RF power technology and present latest technical papers at IMS 2019
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埃赋隆宣布面向ISM应用推出业界最耐用的2kW RF功率LDMOS晶体管
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埃賦隆宣佈面向ISM應用推出業界最耐用的2kW RF功率LDMOS電晶體
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Ampleon annuncia il più robusto transistor di potenza RF da 2 KW in tecnologia LDMOS per applicazioni ISM
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Ampleon stellt den branchenweit robustesten 2KW HF-LDMOS-Transistor für ISM-Anwendungen vor
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Ampleon announces the industry’s most rugged 2KW RF power LDMOS transistor for ISM applications
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Transistor di potenza RF da 750 W a 915 MHz consente di progettare amplificatori di potenza più compatti
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Hocheffizienter 750 W-HF-Leistungstransistor ermöglicht bei 915 MHz kompaktere Leistungsverstärker-Designs
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High-efficiency 750W RF power transistor at 915 MHz enables more compact power amplifier designs
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Transistor RF a elevata potenza per applicazioni che utilizzano l'energia RF nei settori professionale e industriale
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Hochleistungs-HF-Transistor für industrielle und professionelle HF-Energieanwendungen
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High power RF transistor targets Industrial and Professional RF Energy applications
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Modulo compatto da 250 W a doppio stadio per applicazioni a 2,4 GHz con ingressi/uscite a 50 Ohm semplifica il processo di integrazione
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Kompaktes zweistufiges 250W/2,4GHz-Modul mit 50 Ω-Ein-/Ausgängen vereinfacht die Integration
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Compact 250 W dual-stage 2.4 GHz module with 50 Ohm input/outputs eases integration complexity
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Ampleon secures refinancing to drive growth
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Ampleon leads RF power efficiency with launch of 62% efficient Gen9HV LDMOS transistor for particle accelerators
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Highly efficient 1,600 Watt extremely rugged RF power transistor targets 50V FM radio broadcast applications
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Ampleon to showcase leading RF power products at European Microwave Week 2018
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Rugged 250 Watt RF PA transistor delivers 69 % energy efficiency and withstands VSWR 20:1 on all phases
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Ampleon launches first Gen9HV LDMOS 140 Watt RF PA transistor for UHF broadcast applications
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Ampleon announces IMS 2018 conference sessions and booth demonstration highlights
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Ampleon issues update on investor status
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200 Watt LDMOS matched input/output amplifier module speeds development of 433 MHz systems
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Ampleon launch ISM signal generator IC for RF energy applications
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埃賦隆半導體參加EDI CON 2018大會
荷蘭奈梅亨 – 埃賦隆半導體(Ampleon)今天宣佈其參加3月20日至3月22日在中國北京舉行的電子設計創新大會(EDI CON)的詳細資訊。
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Ampleon is showcasing several new products at the IEEE International Microwave Symposium 2022
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Ampleon extends isolator-free sub-6GHz line-ups with compact multistage Doherty MMIC drivers for 5G NR and 4G LTE Macro base station applications
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Ampleon boosts GaN-on-SiC HEMT transistor performance with the release of Generation 3
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Ampleon extends LDMOS base station and multi-carrier line up with the introduction of 400 W rugged Doherty RF power transistor
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埃赋隆半导体推出全新高功能通用宽带LDMOS晶体管,以适应广播电视、工业、科学和医疗应用
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埃賦隆半導體推出全新高功能通用寬頻LDMOS晶體管,以適應廣播電視、工業、科學和醫療應用
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Ampleon Introduces New Highly Versatile Wideband LDMOS Transistors to Address Broadcast, Industrial, Scientific and Medical Applications
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Ampleon opens RF Energy Competence Center in Hefei
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Ampleon participates in EDI CON 2018
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Ampleon 1 kW 2.4 GHz compact RF energy reference system targets industrial heating market and drives magnetron replacement
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Compact SOT502 ISM band RF PA transistor delivers 600 Watts for RF energy applications
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Wide-band 20 Watt single-stage driver yields high efficiency, gain and extremely low thermal resistance
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Update on investor structure
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Ampleon launches first devices using Gen9HV 50 V base station optimised process
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Ampleon delivers lower power consumption and increased efficiency for wireless infrastructure PAs
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Ampleon showcases LDMOS and GaN RF PA portfolio and high power RF solutions at IMS
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Ampleon showcases LDMOS and GaN RF PA portfolio and high power RF solutions at EDI CON
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Ampleon – il partner globale di riferimento per la potenza RF
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Ampleon - de toonaangevende leverancier van RF Power componenten
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Ampleon - the leading global partner in RF power
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Ampleon introduces GaN RF power transistors in 10 to 200W ratings
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Ampleons robuste LDMOS-HF-Leistungstransistoren für HF-, VHF- und ISM-Anwendungen stehen nun in kostengünstigen vergossenen Gehäusen bereit
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I transistor di potenza LDMOS RF a elevata affidabilità di Ampleon per applicazioni nelle bande HF, VHF e ISM sono ora disponibili in package plastico OMP di costo contenuto
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Ampleon’s extremely rugged LDMOS RF power transistors for HF, VHF and ISM applications now available in cost effective overmoulded packages
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Ampleon en HAS Hogeschool doen gezamenlijk onderzoek aan full spectrum verlichting voor tuinbouwtoepassingen
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Ampleon and HAS University collaborate on full spectrum lighting research for horticultural applications
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RF transistor delivers >50% efficiency at 150W DVB-T for ultra wideband asymmetrical Doherty applications
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Ampleon and Midea collaboration results in world’s first solid state oven
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Ampleon showcases RF energy innovations at EDI CON
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Ampleon präsentiert Innovationen beim IMS
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Ampleon stellt auf der European Microwave Week 2017 neue Produkte vor und hält Vorträge
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Ampleon rolls-out new products and presents technical papers at European Microwave Week 2017
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Ampleon showcases latest innovations at IMS
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앰플레온, 국제 마이크로웨이브 심포지엄(IMS)에서초고속 무선통신용 전력 증폭기 등 최신 기술 발표
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Ampleon 在 IMS(国际微波会议)上展出最新技术与产品
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アンプレオン、IMS (国際マイクロ波シンポジウム) で最新技術を展示
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1400 CW extremely rugged reliable RF transistor withstands VSWR > 65:1
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Ampleon GaN RF transistor family complements LDMOS portfolio with high-efficiency and wideband solutions for mobile broadband
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Ampleon GaN RF transistor family complements LDMOS portfolio with high-efficiency and wideband solutions for mobile broadband
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Ampleon unveils full portfolio of PA solutions for small cells and massive MIMO
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Amplify a Sustainable Future
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Student Design Competition at European Microwave Week (EuMW) 2020
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