1. Home
  2. Search results

Search results

Search results


209 products found for "flip electronics"

  • BLF10M6LS135

    BLF10M6LS135

    This device has been transferred from Ampleon to Flip Electronics.

    135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz.

    Learn more

  • BLF10M6LS200

    BLF10M6LS200

    This device has been transferred from Ampleon to Flip Electronics.

    200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to 1000 MHz.

    Learn more

  • BLF1721M8LS200

    BLF1721M8LS200

    This device has been transferred from Ampleon to Flip Electronics.

    200 W LDMOS power transistor for various applications such as Industrial, Scientific and Medical (ISM) and industrial heating at frequencies from 1700 MHz to 2100 MHz.

    Learn more

  • BLF174XR

    BLF174XR

    This device has been transferred from Ampleon to Flip Electronics.

    A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band.

    Learn more

  • BLF174XRS

    BLF174XRS

    This device has been transferred from Ampleon to Flip Electronics.

    A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band.

    Learn more

  • BLF178P

    BLF178P

    This device has been transferred from Ampleon to Flip Electronics.

    A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band.

    Learn more

  • BLF178XR

    BLF178XR

    This device has been transferred from Ampleon to Flip Electronics.

    A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band.

    Learn more

  • BLF178XRS

    BLF178XRS

    This device has been transferred from Ampleon to Flip Electronics.

    A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band.

    Learn more

  • BLA6G1011-200R

    BLA6G1011-200R

    This device has been transferred from Ampleon to Flip Electronics.

    200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.

    Learn more

  • BLA6G1011L-200RG

    BLA6G1011L-200RG

    This device has been transferred from Ampleon to Flip Electronics.

    200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.

    Learn more

  • BLA6H0912-500

    BLA6H0912-500

    This device has been transferred from Ampleon to Flip Electronics.

    500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.

    Learn more

  • BLA8G1011LS-300G

    BLA8G1011LS-300G

    This device has been transferred from Ampleon to Flip Electronics.

    300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.

    Learn more

  • BLC8G24LS-240AV

    BLC8G24LS-240AV

    This device has been transferred from Ampleon to Flip Electronics.

    240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.

    Learn more

  • BLF10H6600P

    BLF10H6600P

    This device has been transferred from Ampleon to Flip Electronics.

    A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

    Learn more

  • BLF10H6600PS

    BLF10H6600PS

    This device has been transferred from Ampleon to Flip Electronics.

    A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

    Learn more

  • BLF10M6135

    BLF10M6135

    This device has been transferred from Ampleon to Flip Electronics.

    135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz.

    Learn more

  • BLF10M6200

    BLF10M6200

    This device has been transferred from Ampleon to Flip Electronics.

    200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to 1000 MHz.

    Learn more

  • BLA6H0912L-1000

    BLA6H0912L-1000

    This device has been transferred from Ampleon to Flip Electronics.

    1000 W LDMOS pulsed power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such as Mode-S, TCAS, JTIDS, DME and TACAN.

    Learn more

  • BLA6H0912LS-1000

    BLA6H0912LS-1000

    This device has been transferred from Ampleon to Flip Electronics.

    1000 W LDMOS pulsed power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such as Mode-S, TCAS, JTIDS, DME and TACAN.

    Learn more

  • BLA6H1011-600

    BLA6H1011-600

    This device has been transferred from Ampleon to Flip Electronics.

    600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz 1090 MHz range.

    Learn more

  • BLA8G1011L-300

    BLA8G1011L-300

    This device has been transferred from Ampleon to Flip Electronics.

    300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.

    Learn more

  • BLA8G1011L-300G

    BLA8G1011L-300G

    This device has been transferred from Ampleon to Flip Electronics.

    300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.

    Learn more

  • BLA8G1011LS-300

    BLA8G1011LS-300

    This device has been transferred from Ampleon to Flip Electronics.

    300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.

    Learn more

  • BLF184XRS

    BLF184XRS

    This device has been transferred from Ampleon to Flip Electronics.

    A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

    Learn more

  • BLF189XRB

    BLF189XRB

    This device has been transferred from Ampleon to Flip Electronics.

    A 1900 W extremely rugged LDMOS power transistor for industrial pulsed applications in the HF to 150 MHz band.

    Learn more

  • BLF189XRBS

    BLF189XRBS

    This device has been transferred from Ampleon to Flip Electronics.

    A 1900 W extremely rugged LDMOS power transistor for industrial pulsed applications in the HF to 150 MHz band.

    Learn more

  • BLF189XRAS

    BLF189XRAS

    This device has been transferred from Ampleon to Flip Electronics.

    A 1700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band.

    Learn more

  • BLF25M612

    BLF25M612

    This device has been transferred from Ampleon to Flip Electronics.

    12 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.

    The BLF25M612 and BLF25M612G are drivers designed for high power CW applications and is assembled in a high performance ceramic package.

    Learn more

  • BLF188XRG

    BLF188XRG

    This device has been transferred from Ampleon to Flip Electronics.

    A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

    Learn more

  • BLF188XRS

    BLF188XRS

    This device has been transferred from Ampleon to Flip Electronics.

    A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

    Learn more

  • BLF182XR

    BLF182XR

    This device has been transferred from Ampleon to Flip Electronics.

    A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

    Learn more

  • BLF182XRS

    BLF182XRS

    This device has been transferred from Ampleon to Flip Electronics.

    A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

    Learn more

  • BLF183XR

    BLF183XR

    This device has been transferred from Ampleon to Flip Electronics.

    A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

    Learn more

  • BLF183XRS

    BLF183XRS

    This device has been transferred from Ampleon to Flip Electronics.

    A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

    Learn more

  • BLF184XR

    BLF184XR

    This device has been transferred from Ampleon to Flip Electronics.

    A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

    Learn more

  • BLF184XRG

    BLF184XRG

    This device has been transferred from Ampleon to Flip Electronics.

    A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

    Learn more

  • BLF188XR

    BLF188XR

    This device has been transferred from Ampleon to Flip Electronics.

    A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

    Learn more

  • BLF2425M7L100

    BLF2425M7L100

    This device has been transferred from Ampleon to Flip Electronics.

    100 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz.

    Learn more

  • BLF2425M7L140

    BLF2425M7L140

    This device has been transferred from Ampleon to Flip Electronics.

    140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M7L140 and BLF2425M7LS140 are designed for high power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions.

    Learn more

  • BLF2425M7L250P

    BLF2425M7L250P

    This device has been transferred from Ampleon to Flip Electronics.

    250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.

    The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions.

    Learn more

  • BLF2425M7LS100

    BLF2425M7LS100

    This device has been transferred from Ampleon to Flip Electronics.

    100 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz.

    Learn more

  • BLF2425M7LS140

    BLF2425M7LS140

    This device has been transferred from Ampleon to Flip Electronics.

    140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M7L140 and BLF2425M7LS140 are designed for high power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions.

    Learn more

  • BLF573

    BLF573

    This device has been transferred from Ampleon to Flip Electronics.

    A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.

    Learn more

  • BLF573S

    BLF573S

    This device has been transferred from Ampleon to Flip Electronics.

    A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.

    Learn more

  • BLF574

    BLF574

    This device has been transferred from Ampleon to Flip Electronics.

    A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.

    Learn more

  • BLF574XR

    BLF574XR

    This device has been transferred from Ampleon to Flip Electronics.

    A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF574 using Ampleon"s XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance.

    Learn more

  • BLF574XRS

    BLF574XRS

    This device has been transferred from Ampleon to Flip Electronics.

    A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF574 using Ampleon's XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance.

    Learn more

  • BLF578

    BLF578

    This device has been transferred from Ampleon to Flip Electronics.

    A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.

    Learn more

  • BLF578XR

    BLF578XR

    This device has been transferred from Ampleon to Flip Electronics.

    A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using Ampleon"s XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance.

    Learn more

  • BLF571

    BLF571

    This device has been transferred from Ampleon to Flip Electronics.

    A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the HF and VHF band.

    Learn more

  • BLF2324M8LS200P

    BLF2324M8LS200P

    This device has been transferred from Ampleon to Flip Electronics.

    200 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz.

    Learn more

  • BLF2425M7LS250P

    BLF2425M7LS250P

    This device has been transferred from Ampleon to Flip Electronics.

    250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.

    The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions.

    Learn more

  • BLF2425M8L140

    BLF2425M8L140

    This device has been transferred from Ampleon to Flip Electronics.

    140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.

    The BLF2425M8L140 and BLF2425M8LS140 are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions.

    Learn more

  • BLF2425M8LS140

    BLF2425M8LS140

    This device has been transferred from Ampleon to Flip Electronics.

    140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.

    The BLF2425M8L140 and BLF2425M8LS140 are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions.

    Learn more

  • BLF898S

    BLF898S

    This device has been transferred from Ampleon to Flip Electronics.

    A 900 W LDMOS RF power transistor for broadcast Doherty and class AB transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

    Learn more

  • BLF0910H6LS500

    BLF0910H6LS500

    This device has been transferred from Ampleon to Flip Electronics.

    A 500 W LDMOS power transistor for industrial applications at frequency of 915 MHz.

    The BLF0910H6L500 and BLF0910H6LS500 are designed for high-power CW applications and are assembled in high performance ceramic packages.

    Learn more

  • BLP05H6350XR

    BLP05H6350XR

    This device has been transferred from Ampleon to Flip Electronics.

    A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

    Learn more

  • BLP05H6350XRG

    BLP05H6350XRG

    This device has been transferred from Ampleon to Flip Electronics.

    A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

    Learn more

  • BLP05H6700XR

    BLP05H6700XR

    This device has been transferred from Ampleon to Flip Electronics.

    A 700 W extra rugged LDMOS power transistor optimized for broadcast, industrial, aerospace and defense applications in the HF to 600 MHz band.

    Learn more

  • BLF898

    BLF898

    This device has been transferred from Ampleon to Flip Electronics.

    A 900 W LDMOS RF power transistor for broadcast Doherty and class AB transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

     

    Whitepaper Doherty Architectures in UHF

    This White Paper explains different PA architectures which can be used in today’s UHF Broadcast industry. 

    In this paper a brief discussion will be given to explain these new Doherty architectures and to help customers finding the best solution for their transmitter. Ampleon’s transistor family BLF8XX can support these Doherty architectures.

    Click here to download.

    Learn more

  • BLP05H635XRG

    BLP05H635XRG

    This device has been transferred from Ampleon to Flip Electronics.

    A 35 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band

    Learn more

  • BLP05H675XRG

    BLP05H675XRG

    This device has been transferred from Ampleon to Flip Electronics.

    A 75 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band

    Learn more

  • BLP05H6110XRG

    BLP05H6110XRG

    This device has been transferred from Ampleon to Flip Electronics.

    A 110 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

    Learn more

  • BLP05H6150XRG

    BLP05H6150XRG

    This device has been transferred from Ampleon to Flip Electronics.

    A 150 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

    Learn more

  • BLP05H6250XRG

    BLP05H6250XRG

    This device has been transferred from Ampleon to Flip Electronics.

    A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

    Learn more

  • BLA8H0910LS-500

    BLA8H0910LS-500

    This device has been transferred from Ampleon to Flip Electronics.

    A 500 W LDMOS power transistor for avionics applications at frequencies from 900 MHz to 930 MHz.

    The BLA8H0910L-500 and BLA8H0910LS-500 are designed for high-power CW applications and are assembled in high performance ceramic packages.

    Learn more

  • BLP35M805

    BLP35M805

    This device has been transferred from Ampleon to Flip Electronics.

    5 W LDMOS power transistor for broadcast, ISM and A&D applications at frequencies from HF to 3500 MHz. 

    The BLP35M805 driver is designed for high power CW applications and is assembled in a high performance thermally enhanced plastic package.

    Learn more

  • BLP05H6700XRG

    BLP05H6700XRG

    This device has been transferred from Ampleon to Flip Electronics.

    A 700 W extra rugged LDMOS power transistor optimized for broadcast, industrial, aerospace and defense applications in the HF to 600 MHz band.

    Learn more

  • BLA8H0910L-500

    BLA8H0910L-500

    This device has been transferred from Ampleon to Flip Electronics.

    A 500 W LDMOS power transistor for avionics applications at frequencies from 900 MHz to 930 MHz.

    The BLA8H0910L-500 and BLA8H0910LS-500 are designed for high-power CW applications and are assembled in high performance ceramic packages.

    Learn more

  • BLC2425M8LS300P

    BLC2425M8LS300P

    This device has been transferred from Ampleon to Flip Electronics.

    300 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.

    The BLC2425M8LS300P is designed for high-power CW applications and is assembled in a high performance plastic package.

    Learn more

  • BLF9G38LS-90P

    BLF9G38LS-90P

    This device has been transferred from Ampleon to Flip Electronics.

    90 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.

    Learn more

  • BLL6G1214L-250

    BLL6G1214L-250

    This device has been transferred from Ampleon to Flip Electronics.

    250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

    Learn more

  • BLF988

    BLF988

    This device has been transferred from Ampleon to Flip Electronics.

    A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

    Learn more

  • BLF988S

    BLF988S

    This device has been transferred from Ampleon to Flip Electronics.

    A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

    Learn more

  • BLL8H0514-25

    BLL8H0514-25

    This device has been transferred from Ampleon to Flip Electronics.

    25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.

    Learn more

  • BLL8H0514L-130

    BLL8H0514L-130

    This device has been transferred from Ampleon to Flip Electronics.

    130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.

    Learn more

  • BLL8H0514LS-130

    BLL8H0514LS-130

    This device has been transferred from Ampleon to Flip Electronics.

    130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.

    Learn more

  • BLL6H1214LS-500

    BLL6H1214LS-500

    This device has been transferred from Ampleon to Flip Electronics.

    500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

    Learn more

  • BLL8H1214L-250

    BLL8H1214L-250

    This device has been transferred from Ampleon to Flip Electronics.

    250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

    Learn more

  • BLL8H1214L-500

    BLL8H1214L-500

    This device has been transferred from Ampleon to Flip Electronics.

    500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

    Learn more

  • BLL8H1214LS-250

    BLL8H1214LS-250

    This device has been transferred from Ampleon to Flip Electronics.

    250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

    Learn more

  • BLL8H1214LS-500

    BLL8H1214LS-500

    This device has been transferred from Ampleon to Flip Electronics.

    500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

    Learn more

  • BLL6H0514-25

    BLL6H0514-25

    This device has been transferred from Ampleon to Flip Electronics.

    25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.

    Learn more

  • BLL6H0514L-130

    BLL6H0514L-130

    This device has been transferred from Ampleon to Flip Electronics.

    130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range

    Learn more

  • BLL6H0514LS-130

    BLL6H0514LS-130

    This device has been transferred from Ampleon to Flip Electronics.

    130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range

    Learn more

  • BLL6H1214-500

    BLL6H1214-500

    This device has been transferred from Ampleon to Flip Electronics.

    500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

    Learn more

  • BLL6H1214L-250

    BLL6H1214L-250

    This device has been transferred from Ampleon to Flip Electronics.

    250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

    Learn more

  • BLL6H1214LS-250

    BLL6H1214LS-250

    This device has been transferred from Ampleon to Flip Electronics.

    250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

    Learn more

  • BLC9H10XS-300P

    BLC9H10XS-300P

    This device has been transferred from Ampleon to Flip Electronics.

    300 W LDMOS power transistor for base station applications at frequencies from 600 MHz to 960 MHz.

    Learn more

  • BLP05H6110XR

    BLP05H6110XR

    This device has been transferred from Ampleon to Flip Electronics.

    A 110 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

    Learn more

  • BLP05H6150XR

    BLP05H6150XR

    This device has been transferred from Ampleon to Flip Electronics.

    A 150 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

    Learn more

  • BLP05H635XR

    BLP05H635XR

    This device has been transferred from Ampleon to Flip Electronics.

    A 35 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

    Learn more

  • BLP05H675XR

    BLP05H675XR

    This device has been transferred from Ampleon to Flip Electronics.

    A 75 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

    Learn more

  • BLP10H603

    BLP10H603

    This device has been transferred from Ampleon to Flip Electronics.

    A 2.5 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz.

    Learn more

  • BLP10H605

    BLP10H605

    This device has been transferred from Ampleon to Flip Electronics.

    A 5 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz.

    Learn more

  • BLP10H610

    BLP10H610

    This device has been transferred from Ampleon to Flip Electronics.

    A 10 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz.

    Learn more

  • BLP15M7160P

    BLP15M7160P

    This device has been transferred from Ampleon to Flip Electronics.

    A 160 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.

    Learn more

  • BLS6G2731-120

    BLS6G2731-120

    This device has been transferred from Ampleon to Flip Electronics.

    120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.

    Learn more

  • BLS6G2731S-120

    BLS6G2731S-120

    This device has been transferred from Ampleon to Flip Electronics.

    120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.

    Learn more

  • BLS6G2731S-130

    BLS6G2731S-130

    This device has been transferred from Ampleon to Flip Electronics.

    130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.

    Learn more

  • BLS6G2735L-30

    BLS6G2735L-30

    This device has been transferred from Ampleon to Flip Electronics.

    30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz.

    Learn more

  • BLP25M710

    BLP25M710

    This device has been transferred from Ampleon to Flip Electronics.

    A 10 W LDMOS power transistor for broadcast and industrial applications in the HF to 2500 MHz band.

    Learn more

  • BLF6G13L-250P

    BLF6G13L-250P

    This device has been transferred from Ampleon to Flip Electronics.

    250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz.

    Learn more

  • BLF6G13LS-250P

    BLF6G13LS-250P

    This device has been transferred from Ampleon to Flip Electronics.

    250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz.

    Learn more

  • BLF6G13LS-250PG

    BLF6G13LS-250PG

    This device has been transferred from Ampleon to Flip Electronics.

    250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz.

    Learn more

  • BLF6G27-10G

    BLF6G27-10G

    This device has been transferred from Ampleon to Flip Electronics.

    10 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz

    Learn more

  • BLF6G21-10G

    BLF6G21-10G

    This device has been transferred from Ampleon to Flip Electronics.

    10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.

    Learn more

  • BLF578XRS

    BLF578XRS

    This device has been transferred from Ampleon to Flip Electronics.

    A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using Ampleon's XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance.

    Learn more

  • BLF642

    BLF642

    This device has been transferred from Ampleon to Flip Electronics.

    A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.

    Learn more

  • BLF644P

    BLF644P

    This device has been transferred from Ampleon to Flip Electronics.

    A 70 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1300 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.

    Learn more

  • BLF645

    BLF645

    This device has been transferred from Ampleon to Flip Electronics.

    A 100 W LDMOS RF power pushpull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.

    Learn more

  • BLF6G15L-500H

    BLF6G15L-500H

    This device has been transferred from Ampleon to Flip Electronics.

    A 500W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W average DVB-T at 1.5 GHz. The excellent ruggedness of this device makes it ideal for digital transmitter applications.

    Learn more

  • BLF6G15LS-500H

    BLF6G15LS-500H

    This device has been transferred from Ampleon to Flip Electronics.

    A 500W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W average DVB-T at 1.5 GHz. The excellent ruggedness of this device makes it ideal for digital transmitter applications.

    Learn more

  • BLF6G10LS-200RN

    BLF6G10LS-200RN

    This device has been transferred from Ampleon to Flip Electronics.

    200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz

    Learn more

  • BLF189XRA

    BLF189XRA

    This device has been transferred from Ampleon to Flip Electronics.

    A 1700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band.

    Learn more

  • BLU6H0410L-600P

    BLU6H0410L-600P

    This device has been transferred from Ampleon to Flip Electronics.

    A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz.

    Learn more

  • BLU6H0410LS-600P

    BLU6H0410LS-600P

    This device has been transferred from Ampleon to Flip Electronics.

    A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz.

    Learn more

  • BLS6G2735LS-30

    BLS6G2735LS-30

    This device has been transferred from Ampleon to Flip Electronics.

    30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz.

    Learn more

  • BLS6G2933S-130

    BLS6G2933S-130

    This device has been transferred from Ampleon to Flip Electronics.

    130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz frequency range.

    Learn more

  • BLS6G3135-120

    BLS6G3135-120

    This device has been transferred from Ampleon to Flip Electronics.

    120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

    Learn more

  • BLS6G3135-20

    BLS6G3135-20

    This device has been transferred from Ampleon to Flip Electronics.

    20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

    Learn more

  • BLS6G3135S-120

    BLS6G3135S-120

    This device has been transferred from Ampleon to Flip Electronics.

    120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

    Learn more

  • BLP05H6250XR

    BLP05H6250XR

    This device has been transferred from Ampleon to Flip Electronics.

    A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

    Learn more

  • BLF888E

    BLF888E

    This device has been transferred from Ampleon to Flip Electronics.

    A 750 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

     

    Whitepaper Doherty Architectures in UHF

    This White Paper explains different PA architectures which can be used in today’s UHF Broadcast industry. 

    In this paper a brief discussion will be given to explain these new Doherty architectures and to help customers finding the best solution for their transmitter. Ampleon’s transistor family BLF8XX can support these Doherty architectures.

    Click here to download.

    Learn more

  • BLF888ES

    BLF888ES

    This device has been transferred from Ampleon to Flip Electronics.

    A 750 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

     

    Whitepaper Doherty Architectures in UHF

    This White Paper explains different PA architectures which can be used in today’s UHF Broadcast industry. 

    In this paper a brief discussion will be given to explain these new Doherty architectures and to help customers finding the best solution for their transmitter. Ampleon’s transistor family BLF8XX can support these Doherty architectures.

    Click here to download.

    Learn more

  • BLC9G20XS-400AVT

    BLC9G20XS-400AVT

    This device has been transferred from Ampleon to Flip Electronics.

    400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz and 1930 MHz to 1995 MHz

    Learn more

  • BLP10H630P

    BLP10H630P

    This device has been transferred from Ampleon to Flip Electronics.

    A 30 W LDMOS power transistor for broadcast and industrial applications in the HF to 1000 MHz band

    Learn more

  • BLS7G3135L-350P

    BLS7G3135L-350P

    This device has been transferred from Ampleon to Flip Electronics.

    350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

    Learn more

  • BLS7G3135LS-200

    BLS7G3135LS-200

    This device has been transferred from Ampleon to Flip Electronics.

    200 W LDMOS power transistor for S-band radar applications in the frequency range from 3100 MHz to 3500 MHz.

    Learn more

  • BLS7G3135LS-350P

    BLS7G3135LS-350P

    This device has been transferred from Ampleon to Flip Electronics.

    350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

    Learn more

  • BLP10H630PG

    BLP10H630PG

    This device has been transferred from Ampleon to Flip Electronics.

    A 30 W LDMOS power transistor for broadcast and industrial applications in the HF to 1000 MHz band

    Learn more

  • BLP10H660P

    BLP10H660P

    This device has been transferred from Ampleon to Flip Electronics.

    A 60 W LDMOS power transistor for broadcast and industrial applications in the HF to 1000 MHz band.

    Learn more

  • BLP10H660PG

    BLP10H660PG

    This device has been transferred from Ampleon to Flip Electronics.

    A 60 W LDMOS power transistor for broadcast and industrial applications in the HF to 1000 MHz band

    Learn more

  • BLP10H690P

    BLP10H690P

    This device has been transferred from Ampleon to Flip Electronics.

    A 90 W LDMOS power transistor for broadcast and industrial applications in the HF to 1000 MHz band

    Learn more

  • BLP10H690PG

    BLP10H690PG

    This device has been transferred from Ampleon to Flip Electronics.

    A 90 W LDMOS power transistor for broadcast and industrial applications in the HF to 1000 MHz band

    Learn more

  • BLP10H6120P

    BLP10H6120P

    This device has been transferred from Ampleon to Flip Electronics.

    A 120 W LDMOS power transistor for broadcast and industrial applications in the HF to 1000 MHz band

    Learn more

  • BLP10H6120PG

    BLP10H6120PG

    This device has been transferred from Ampleon to Flip Electronics.

    A 120 W LDMOS power transistor for broadcast and industrial applications in the HF to 1000 MHz band

    Learn more

  • BLS6G3135S-20

    BLS6G3135S-20

    This device has been transferred from Ampleon to Flip Electronics.

    20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

    Learn more

  • BLS7G2325L-105

    BLS7G2325L-105

    This device has been transferred from Ampleon to Flip Electronics.

    105 W LDMOS power transistor for S-band radar applications at frequencies from 2300 MHz to 2500 MHz

    Learn more

  • BLS7G2729L-350P

    BLS7G2729L-350P

    This device has been transferred from Ampleon to Flip Electronics.

    350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.

    Learn more

  • BLS7G2729LS-350P

    BLS7G2729LS-350P

    This device has been transferred from Ampleon to Flip Electronics.

    350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.

    Learn more

  • BLP27M810

    BLP27M810

    This device has been transferred from Ampleon to Flip Electronics.

    10 W LDMOS power transistor for broadcast and Industrial, Scientific and Medical (ISM) applications at frequencies from HF to 2700 MHz. The BLP27M810 driver is designed for high power CW applications and is assembled in a high performance thermally enhanced plastic package.

    Learn more

  • BLF6G38LS-100

    BLF6G38LS-100

    This device has been transferred from Ampleon to Flip Electronics.

    100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.

    Learn more

  • BLF7G22LS-130

    BLF7G22LS-130

    This device has been transferred from Ampleon to Flip Electronics.

    130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

    Learn more

  • BLF7G10LS-250

    BLF7G10LS-250

    This device has been transferred from Ampleon to Flip Electronics.

    250 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz.

    Learn more

  • BLF7G20LS-200

    BLF7G20LS-200

    This device has been transferred from Ampleon to Flip Electronics.

    200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz

    Learn more

  • BLF7G20LS-90P

    BLF7G20LS-90P

    This device has been transferred from Ampleon to Flip Electronics.

    90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz, designed for operation at 1427 MHz to1525 MHz, 1805 MHz to 1880 MHz and 2110 MHz to 2170 MHz.

    Learn more

  • BLF6G38-50

    BLF6G38-50

    This device has been transferred from Ampleon to Flip Electronics.

    50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz.

    Learn more

  • BLF888A

    BLF888A

    This device has been transferred from Ampleon to Flip Electronics.

    A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

     

    Whitepaper Doherty Architectures in UHF

    This White Paper explains different PA architectures which can be used in today’s UHF Broadcast industry. 

    In this paper a brief discussion will be given to explain these new Doherty architectures and to help customers finding the best solution for their transmitter. Ampleon’s transistor family BLF8XX can support these Doherty architectures.

    Click here to download.

    Learn more

  • BLF888AS

    BLF888AS

    This device has been transferred from Ampleon to Flip Electronics.

    A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

     

    Whitepaper Doherty Architectures in UHF

    This White Paper explains different PA architectures which can be used in today’s UHF Broadcast industry. 

    In this paper a brief discussion will be given to explain these new Doherty architectures and to help customers finding the best solution for their transmitter. Ampleon’s transistor family BLF8XX can support these Doherty architectures.

    Click here to download.

    Learn more

  • BLF888B

    BLF888B

    This device has been transferred from Ampleon to Flip Electronics.

    A 650W LDMOS RF power transistor for DVB-T broadcast applications optimised to give extremely high power and efficiency in Doherty solutions.

     

    Whitepaper Doherty Architectures in UHF

    This White Paper explains different PA architectures which can be used in today’s UHF Broadcast industry. 

    In this paper a brief discussion will be given to explain these new Doherty architectures and to help customers finding the best solution for their transmitter. Ampleon’s transistor family BLF8XX can support these Doherty architectures.

    Click here to download.

    Learn more

  • BLF888BS

    BLF888BS

    This device has been transferred from Ampleon to Flip Electronics.

    A 650W LDMOS RF power transistor for DVB-T broadcast applications optimised to give extremely high power and efficiency in Doherty solutions.

     

    Whitepaper Doherty Architectures in UHF

    This White Paper explains different PA architectures which can be used in today’s UHF Broadcast industry. 

    In this paper a brief discussion will be given to explain these new Doherty architectures and to help customers finding the best solution for their transmitter. Ampleon’s transistor family BLF8XX can support these Doherty architectures.

    Click here to download.

    Learn more

  • BLF888D

    BLF888D

    This device has been transferred from Ampleon to Flip Electronics.

    A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

     

    Whitepaper Doherty Architectures in UHF

    This White Paper explains different PA architectures which can be used in today’s UHF Broadcast industry. 

    In this paper a brief discussion will be given to explain these new Doherty architectures and to help customers finding the best solution for their transmitter. Ampleon’s transistor family BLF8XX can support these Doherty architectures.

    Click here to download.

    Learn more

  • BLF881

    BLF881

    This device has been transferred from Ampleon to Flip Electronics.

    A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

    Learn more

  • BLF881S

    BLF881S

    This device has been transferred from Ampleon to Flip Electronics.

    A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

    Learn more

  • BLF882

    BLF882

    This device has been transferred from Ampleon to Flip Electronics.

    A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrialapplications. The transistor can deliver 200 W in broadband applications from HF to 860 MHz. Theexcellent ruggedness and broadband performance of this device makes it ideal for digitaltransmitter applications.

    Learn more

  • BLF882S

    BLF882S

    This device has been transferred from Ampleon to Flip Electronics.

    A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrialapplications. The transistor can deliver 200 W in broadband applications from HF to 860 MHz. Theexcellent ruggedness and broadband performance of this device makes it ideal for digitaltransmitter applications.

    Learn more

  • BLF884P

    BLF884P

    This device has been transferred from Ampleon to Flip Electronics.

    A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

    Learn more

  • BLF884PS

    BLF884PS

    This device has been transferred from Ampleon to Flip Electronics.

    A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

    Learn more

  • BLF888DS

    BLF888DS

    This device has been transferred from Ampleon to Flip Electronics.

    A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

     

    Whitepaper Doherty Architectures in UHF

    This White Paper explains different PA architectures which can be used in today’s UHF Broadcast industry. 

    In this paper a brief discussion will be given to explain these new Doherty architectures and to help customers finding the best solution for their transmitter. Ampleon’s transistor family BLF8XX can support these Doherty architectures.

    Click here to download.

    Learn more

  • BLF871

    BLF871

    This device has been transferred from Ampleon to Flip Electronics.

    A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

    Learn more

  • BLF871S

    BLF871S

    This device has been transferred from Ampleon to Flip Electronics.

    A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

    Learn more

  • BLF879P

    BLF879P

    This device has been transferred from Ampleon to Flip Electronics.

    A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

    Learn more

  • BLF879PS

    BLF879PS

    This device has been transferred from Ampleon to Flip Electronics.

    A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

    Learn more

  • BLM7G22S-60PB

    BLM7G22S-60PB

    This device has been transferred from Ampleon to Flip Electronics.

    The BLM7G22S-60PB(G) is a dual path 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This device is perfectly suited as general purpose driver in the frequency range from 2100 MHz to 2200 MHz. Available in gull wing or flat lead outline.

    Learn more

  • BLP8G05S-200

    BLP8G05S-200

    This device has been transferred from Ampleon to Flip Electronics.

    200 W LDMOS power transistor for base stations applications at frequencies from 400 MHz to 500 MHz.

    Learn more

  • BLP8G10S-45PG

    BLP8G10S-45PG

    This device has been transferred from Ampleon to Flip Electronics.

    The BLP8G10S-45P and BLP8G10S-45PG are dual path, 45 W LDMOS power transistors for base station applications at frequencies from 700 MHz to 1000 MHz.

    Learn more

  • BLP7G10S-160P

    BLP7G10S-160P

    This device has been transferred from Ampleon to Flip Electronics.

    160 W LDMOS power transistor for base station applications at frequencies from 600 MHz to 960 MHz.

    Learn more

  • BLM7G22S-60PBG

    BLM7G22S-60PBG

    This device has been transferred from Ampleon to Flip Electronics.

    The BLM7G22S-60PB(G) is a dual path 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This device is perfectly suited as general purpose driver in the frequency range from 2100 MHz to 2200 MHz. Available in gull wing or flat lead outline.

    Learn more

  • BLA0912-250

    BLA0912-250

    This device has been transferred from Ampleon to Rochester Electronics.

    Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange.

    Learn more

  • BLA0912-250R

    BLA0912-250R

    This device has been transferred from Ampleon to Rochester Electronics.

    Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange.

    Learn more

  • BLA1011-10

    BLA1011-10

    This device has been transferred from Ampleon to Rochester Electronics.

    Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the flange.

    Learn more

  • BLA1011-2

    BLA1011-2

    This device has been transferred from Ampleon to Rochester Electronics.

    Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT538A) with a ceramic cap. The common source is connected to the mounting base.

    Learn more

  • BLA1011-200

    BLA1011-200

    This device has been transferred from Ampleon to Rochester Electronics.

    200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz.

    Learn more

  • BLA1011-300

    BLA1011-300

    This device has been transferred from Ampleon to Rochester Electronics.

    300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from 1030 MHz to 1090 MHz.

    Learn more

  • BLF145

    BLF145

    This device has been transferred from Ampleon to Rochester Electronics.

    Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range. The transistor is encapsulated in a 4-lead, SOT123A flange package, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request.

    Learn more

  • BLF175

    BLF175

    This device has been transferred from Ampleon to Rochester Electronics.

    Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range. The transistor has a 4-lead, SOT123A flange package, with a ceramic cap. All leads are isolated from the flange.

    Learn more

  • BLF177

    BLF177

    This device has been transferred from Ampleon to Rochester Electronics.

    Silicon N-channel enhancement mode vertical D-MOS transistor

    Learn more

  • BLA1011S-200

    BLA1011S-200

    This device has been transferred from Ampleon to Rochester Electronics.

    200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz.

    Learn more

  • BLF1043

    BLF1043

    This device has been transferred from Ampleon to Rochester Electronics.

    10 W LDMOS power transistor for base station applications at frequencies from HF to 1000 MHz.

    Learn more

  • BLF1046

    BLF1046

    This device has been transferred from Ampleon to Rochester Electronics.

    Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange.

    Learn more

  • BLF245B

    BLF245B

    This device has been transferred from Ampleon to Rochester Electronics.

    Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT279A balanced flange package, with a ceramic cap. The mounting flange provides the common source connection for the transistors.

    Learn more

  • BLF278

    BLF278

    This device has been transferred from Ampleon to Rochester Electronics.

    Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors.

    Learn more

  • BLF3G21-30

    BLF3G21-30

    This device has been transferred from Ampleon to Rochester Electronics.

    30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.

    Learn more

  • BLF404

    BLF404

    This device has been transferred from Ampleon to Rochester Electronics.

    Silicon N-channel enhancement mode vertical D-MOS power transistor in an 8-lead SOT409A SMD package with a ceramic cap.

    Learn more

  • BLF521

    BLF521

    This device has been transferred from Ampleon to Rochester Electronics.

    Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range.

    Learn more

  • BLF542

    BLF542

    This device has been transferred from Ampleon to Rochester Electronics.

    N-channel enhancement mode vertical D-MOS power transistor encapsulated in a 6-lead, SOT171A flange package with a ceramic cap. All leads are isolated from the flange.

    Learn more

  • BLF546

    BLF546

    This device has been transferred from Ampleon to Rochester Electronics.

    Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT268A balanced flange package, with two ceramic caps. The mounting flange provides the common source connection for the transistors.

    Learn more

  • BLF202

    BLF202

    This device has been transferred from Ampleon to Rochester Electronics.

    Silicon N-channel enhancement mode vertical D-MOS transistor in an 8-lead SOT409A SMD package with a ceramic cap

    Learn more

  • BLF2043F

    BLF2043F

    This device has been transferred from Ampleon to Rochester Electronics.

    Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap.

    Learn more

  • BLF242

    BLF242

    This device has been transferred from Ampleon to Rochester Electronics.

    Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123A flange package, with a ceramic cap. All leads are isolated from the flange.

    Learn more

  • BLF244

    BLF244

    This device has been transferred from Ampleon to Rochester Electronics.

    Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123A flange package, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request.

    Learn more

  • BLL1214-250

    BLL1214-250

    This device has been transferred from Ampleon to Rochester Electronics.

    Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange

    Learn more

  • BLL1214-35

    BLL1214-35

    This device has been transferred from Ampleon to Rochester Electronics.

    Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the flange.

    Learn more

  • BLW96

    BLW96

    This device has been transferred from Ampleon to Rochester Electronics.

    NPN silicon planar epitaxial transistor intended for use in class-A,AB and B operated high power industrial and military transmitting equipment in the HF and VHF band.

    Learn more

  • CLF1G0035-100

    CLF1G0035-100

    This device has been transferred from Ampleon to Rochester Electronics.

    CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from Ampleon. Frequency of operation is from DC to 3.5 GHz.

    Learn more

  • CLF1G0035S-100

    CLF1G0035S-100

    This device has been transferred from Ampleon to Rochester Electronics.

    CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from Ampleon. Frequency of operation is from DC to 3.5 GHz.

    Learn more

  • CLF1G0035-100P

    CLF1G0035-100P

    This device has been transferred from Ampleon to Rochester Electronics.

    CLF1G0035-100P and CLF1G0035S-100P are 100 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz.

    Learn more

  • CLF1G0035S-100P

    CLF1G0035S-100P

    This device has been transferred from Ampleon to Rochester Electronics.

    CLF1G0035-100P and CLF1G0035S-100P are 100 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz.

    Learn more

  • CLF1G0035-50

    CLF1G0035-50

    This device has been transferred from Ampleon to Rochester Electronics.

    CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from Ampleon. Frequency of operation is from DC to 3.5 GHz.

    Learn more

  • CLF1G0035S-50

    CLF1G0035S-50

    This device has been transferred from Ampleon to Rochester Electronics.

    CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from Ampleon. Frequency of operation is from DC to 3.5 GHz.

    Learn more

  • CLF1G0060-10

    CLF1G0060-10

    This device has been transferred from Ampleon to Rochester Electronics.

    The CLF1G0060-10 and CLF1G0060S-10 are 10W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz.

    Learn more

  • CLF1G0060S-10

    CLF1G0060S-10

    This device has been transferred from Ampleon to Rochester Electronics.

    The CLF1G0060-10 and CLF1G0060S-10 are 10W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz.

    Learn more

  • CLF1G0060-30

    CLF1G0060-30

    This device has been transferred from Ampleon to Rochester Electronics.

    CLF1G0060-30 and CLF1G0060S-30 are broadband general purpose 30 W amplifiers with first generation GaN HEMT technology from Ampleon. Frequency of operation is from DC to 6.0 GHz.

    Learn more

  • CLF1G0060S-30

    CLF1G0060S-30

    This device has been transferred from Ampleon to Rochester Electronics.

    CLF1G0060-30 and CLF1G0060S-30 are broadband general purpose 30 W amplifiers with first generation GaN HEMT technology from Ampleon. Frequency of operation is from DC to 6.0 GHz.

    Learn more

  • CLF1G0035-200P

    CLF1G0035-200P

    This device has been transferred from Ampleon to Rochester Electronics.

    The CLF1G0035-200P and CLF1G0035S-200P are 200 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz

    Learn more

  • CLF1G0035S-200P

    CLF1G0035S-200P

    This device has been transferred from Ampleon to Rochester Electronics.

    The CLF1G0035-200P and CLF1G0035S-200P are 200 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz

    Learn more

  • BLA6G1011LS-200RG

    BLA6G1011LS-200RG

    This device has been transferred from Ampleon to Flip Electronics.

    200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.

    Learn more

  • BLC10G20LS-240PWT

    BLC10G20LS-240PWT

    This device has been transferred from Ampleon to Flip Electronics.

    240 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.

    Learn more

No documents found for "flip electronics"

No packages found for "flip electronics"

No applications found for "flip electronics"


8 news items found for "flip electronics"


16 pages found for "flip electronics"