Power LDMOS transistor

200 W LDMOS power transistor for base stations applications at frequencies from 400 MHz to 500 MHz.

Features and benefits

  • High efficiency
  • Excellent ruggedness
  • Excellent thermal stability
  • Integrated ESD protection
  • Easy power control
  • Designed for ISM operation (400 MHz to 500 MHz)
  • Input integration for simple board design
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • RF power amplifiers for W-CDMA base stations and multi carrier applications in the 400 MHz to 500 MHz frequency range

Downloads

Datasheet
All application notes
All documentation

All documents

Design tool

RF Power Lifetime Calculator

Transistor:
BLP8G05S-200

Power LDMOS transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 400 500 MHz
PL(1dB) nominal output power at 1 dB gain compression 200 W
Test signal: CW
Gp power gain PL = 210 W; VDS = 28 V [0] 19.5 21 dB
RLin input return loss PL = 210 W; VDS = 28 V [0] -15 -11 dB
ηD drain efficiency PL = 210 W; VDS = 28 V [0] 73 77 %

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLP8G05S-200 HSOP4F
(SOT1138-2)
sot1138-2_po Reel 13" Q1/T1 in Drypack Active Standard Marking BLP8G05S-200Y
(9340 695 47518)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2 G gate
3 D drain
4 D drain
5 SOURCE source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLP8G05S-200 9340 695 47518 BLP8G05S-200Y RFMW Buy Request samples
DigiKey Buy

Design support

Title Type Date
PCB Design BLP8G05S-200(G) (Data sheet) Design support 2015-09-17