Power LDMOS transistor

200 W LDMOS power transistor for base stations applications at frequencies from 400 MHz to 500 MHz.

Features and benefits

  • High efficiency
  • Excellent ruggedness
  • Excellent thermal stability
  • Integrated ESD protection
  • Easy power control
  • Designed for ISM operation (400 MHz to 500 MHz)
  • Input integration for simple board design
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)


  • RF power amplifiers for W-CDMA base stations and multi carrier applications in the 400 MHz to 500 MHz frequency range


All application notes
All documentation

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Design tool

RF Power Lifetime Calculator


Power LDMOS transistor



Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 400 500 MHz
PL(1dB) nominal output power at 1 dB gain compression 200 W
Test signal: CW
Gp power gain PL = 210 W; VDS = 28 V [0] 19.5 21 dB
RLin input return loss PL = 210 W; VDS = 28 V [0] -15 -11 dB
ηD drain efficiency PL = 210 W; VDS = 28 V [0] 73 77 %

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
sot1138-2_po Reel 13" Q1/T1 in Drypack Active Standard Marking BLP8G05S-200Y
(9340 695 47518)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2 G gate
3 D drain
4 D drain
5 SOURCE source


Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLP8G05S-200 9340 695 47518 BLP8G05S-200Y DigiKey Buy Request samples

Design support

Title Type Date
PCB Design BLP8G05S-200(G) (Data sheet) Design support 2015-09-17