
BLS6G2731-120
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLS6G2731-120
Download datasheetLDMOS S-band radar power transistor
120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.
Features and benefits
- Easy power control
- Integrated ESD protection
- High flexibility with respect to pulse formats
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (2.7 GHz to 3.1 GHz)
- Internally matched for ease of use
- Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
Applications
- Radar applications in the 2.7 GHz to 3.1 GHz frequency range
- S-band power amplifiers
Parametrics
Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|
frange | frequency range | 2700 | 3100 | MHz | ||
PL(1dB) | nominal output power at 1 dB gain compression | 120 | W | |||
Test signal: Pulsed RF | ||||||
Gp | power gain | PL = 120 W; VDS = 32 V | 12 | 13.5 | dB | |
RLin | input return loss | PL = 120 W; VDS = 32 V; IDq = 100 mA | -7 | dB | ||
ηD | drain efficiency | PL = 120 W; VDS = 32 V; 2700 MHz ≤ f ≤ 3100 MHz; IDq = 100 mA | 40 | 48 | % | |
PL(1dB) | output power at 1 dB gain compression | VDS = 32 V; 2700 MHz ≤ f ≤ 3100 MHz; IDq = 100 mA | 130 | W | ||
PL | output power | tp = 100 µs; δ = 0.1 | 120 | W | ||
Pdroop(pulse) | pulse droop power | PL = 120 W | 0 | 0.5 | dB | |
VDS | drain-source voltage | PL = 120 W | 32 | V | ||
tr | rise time | PL = 120 W; VDS = 32 V | 20 | 50 | ns | |
tf | fall time | PL = 120 W; VDS = 32 V | 6 | 50 | ns |
Package / Packing
All type numbers in the table below are discontinued.
Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
---|---|---|---|---|---|---|---|
BLS6G2731-120 | SOT502A (SOT502A) |
sot502a_po | Bulk Pack | Discontinued | Standard Marking |
BLS6G2731-120,112 (9340 615 25112) |
Discontinuation information
Pinning info
Pin | Symbol | Description | Simplified outline | Graphic symbol |
---|---|---|---|---|
1 | D | drain |
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2 | G | gate | ||
3 | S | source |
Documentation
Title | Type | Date | |
---|---|---|---|
LDMOS S-band radar power transistor | Data sheet | 2015-12-07 | |
Mounting and Soldering of RF transistors in Air Cavity Packages | Application note | 2022-09-15 | |
RF Power solutions for Broadcast, Navigation and Safety Radio, Industrial, Scientific and Medical applications | Brochure | 2023-03-14 | |
RF Power application reports for Broadcast, Navigation and Safety Radio, Industrial, Scientific and Medical applications | Brochure | 2023-03-02 | |
Packages for RF Power Transistors | Leaflet | 2023-03-27 |
Design support
Title | Type | Date | |
---|---|---|---|
PCB Design BLS6G2731(S)-120 (Data sheet) | Design support | 2012-02-24 |