BLS6G3135S-120
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLS6G3135S-120
Download datasheet
This product has been discontinued.
Click here for discontinuation information.
The replacement is: BLS9G3135LS-115
The replacement is: BLS9G3135LS-115
LDMOS S-Band radar power transistor
120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.
Features and benefits
- Easy power control
- Integrated ESD protection
- Internally matched for ease of use
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (3.1 GHz to 3.5 GHz)
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
Applications
- Radar applications in the 3.1 GHz to 3.5 GHz frequency range
- S-Band power amplifiers
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 3100 | 3500 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 120 | W | |||
| Test signal: Pulsed RF | ||||||
| Gp | power gain | PL = 120 W; VDS = 32 V | 9.5 | 11 | dB | |
| RLin | input return loss | PL = 120 W; VDS = 32 V; IDq = 100 mA | -10 | -6 | dB | |
| ηD | drain efficiency | PL = 120 W; VDS = 32 V; 3100 MHz ≤ f ≤ 3500 MHz; IDq = 100 mA | 39 | 43 | % | |
| PL(1dB) | output power at 1 dB gain compression | VDS = 32 V; 3100 MHz ≤ f ≤ 3500 MHz; IDq = 100 mA | 130 | W | ||
| PL | output power | 120 | W | |||
| VDS | drain-source voltage | PL = 120 W | 32 | V | ||
| tr | rise time | PL = 120 W; VDS = 32 V | 20 | 50 | ns | |
| tf | fall time | PL = 120 W; VDS = 32 V | 6 | 50 | ns | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLS6G3135S-120 | SOT502B (SOT502B) |
sot502b_po | Bulk Pack | Discontinued | Standard Marking |
BLS6G3135S-120,112 (9340 600 64112) |
Discontinuation information
| Type number | Ordering code (12NC) | Last-time buy date | Last-time delivery date | Replacement product | DN Notice | Status | Comments |
|---|---|---|---|---|---|---|---|
| BLS6G3135S-120 | 9340 600 64112 | 2022-09-30 | 2022-12-31 | BLS9G3135LS-115 | 202201003DN | Full Withdrawal |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |
|
|
| 2 | G | gate | ||
| 3 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| LDMOS S-band radar power transistor | Data sheet | 2015-12-07 | |
| Ampleon Longevity Overview | Other type | 2023-02-09 | |
| Mounting and Soldering of RF transistors in Air Cavity Packages | Application note | 2022-09-15 | |
| RF Power solutions for Broadcast, Navigation and Safety Radio, Industrial, Scientific and Medical applications | Brochure | 2023-03-14 | |
| RF Power application reports for Broadcast, Navigation and Safety Radio, Industrial, Scientific and Medical applications | Brochure | 2023-03-02 | |
| Packages for RF Power Transistors | Leaflet | 2023-03-27 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| PCB Design BLS6G3135(S)-120 (Data sheet) | Design support | 2012-02-24 | |
| BLS6G3135-120 Model for ADS (Keysight Advanced Design System) | Simulation model | 2017-04-19 |