BLL8H1214L-250
Download datasheetThis device has been transferred from Ampleon to Flip Electronics.
BLL8H1214L-250
Download datasheetThis device has been transferred from Ampleon to Flip Electronics.
LDMOS L-band radar power transistor
250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
Features and benefits
- Easy power control
- Integrated dual side ESD protection
- High flexibility with respect to pulse formats
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (1.2 GHz to 1.4 GHz)
- Internally matched for ease of use
- Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)
Applications
- L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1200 | 1400 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 250 | W | |||
| Test signal: Pulsed RF | ||||||
| Gp | power gain | PL = 250 W; VDS = 50 V | 15 | 17 | dB | |
| RLin | input return loss | PL = 250 W; VDS = 50 V; IDq = 100 mA | -10 | dB | ||
| ηD | drain efficiency | PL = 250 W; VDS = 50 V; 1200 MHz ≤ f ≤ 1400 MHz; IDq = 100 mA | 49 | 55 | % | |
| PL(1dB) | output power at 1 dB gain compression | VDS = 50 V; 1200 MHz ≤ f ≤ 1400 MHz; IDq = 100 mA | 300 | W | ||
| Pdroop(pulse) | pulse droop power | PL = 250 W | 0 | 0.3 | dB | |
| tr | rise time | PL = 250 W; VDS = 50 V | 15 | ns | ||
| tf | fall time | PL = 250 W; VDS = 50 V | 5 | ns | ||
Package / Packing
| Type number | Package | Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| BLL8H1214L-250 | ACC-780 (SOT502A) |
sot502a_po | Bulk Pack | Transferred | Standard Marking |
BLL8H1214L-250U (9340 687 33112) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |
|
|
| 2 | G | gate | ||
| 3 | S | source |
Ordering & availability
| Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
|---|---|---|---|---|---|
| BLL8H1214L-250 | 9340 687 33112 | BLL8H1214L-250U | Flip Electronics | Buy | Not available |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| LDMOS L-band radar power transistor | Data sheet | 2015-12-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2025-02-03 | |
| RF power solutions for ISM, broadcast, navigation and safety radio applications | Brochure | 2025-04-17 | |
| RF power application reports for ISM, broadcast, navigation and safety radio applications | Brochure | 2025-04-17 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLL8H1214L(S)-250 (Data sheet) | Design support | 2015-01-06 | |
| BLL8H1214L-250 Model for ADS 2016 (Keysight Advanced Design System) | Simulation model | 2016-12-22 | |
| BLL8H1214L(S)-250 Model for ADS 2021 (Keysight Advanced Design System) | Simulation model | 2023-06-16 |