Power LDMOS transistor

160 W LDMOS power transistor for base station applications at frequencies from 600 MHz to 960 MHz.

Features and benefits

  • Integrated ESD protection
  • Excellent ruggedness
  • High power gain
  • High efficiency
  • Excellent reliability
  • Easy power control
  • For RoHS compliance see the product details on the Ampleon website


  • RF power amplifiers for base stations and multi carrier applications in the 600 MHz to 960 MHz frequency range


All application notes
All documentation

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Design tool

RF Power Lifetime Calculator


Power LDMOS transistor



Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 600 960 MHz
PL(1dB) nominal output power at 1 dB gain compression 160 W
Test signal: Pulsed, class-AB
VDS drain-source voltage 860 MHz [0] 28 V
Gp power gain 860 MHz [0] 20 dB
ηD drain efficiency 860 MHz [0] 62 %
IDq quiescent drain current 860 MHz [0] 100 mA

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
sot1223-2_po Reel 13" Q1/T1 in Drypack Active Standard Marking BLP7G10S-160PY
(9349 601 91518)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 G1 gate 1
2 G2 gate 2
3 D2 drain 2
4 D1 drain 1
5 SOURCE source


Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLP7G10S-160P 9349 601 91518 BLP7G10S-160PY RFMW Buy Request samples
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Design support

Title Type Date
PCB Design BLP7G10S-160P (Data sheet) Design support 2018-09-06