Power LDMOS transistor

160 W LDMOS power transistor for base station applications at frequencies from 600 MHz to 960 MHz.

Features and benefits

  • Integrated ESD protection
  • Excellent ruggedness
  • High power gain
  • High efficiency
  • Excellent reliability
  • Easy power control
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • RF power amplifiers for base stations and multi carrier applications in the 600 MHz to 960 MHz frequency range

Downloads

Datasheet
All application notes
All documentation

All documents

Design tool

RF Power Lifetime Calculator

Transistor:
BLP7G10S-160P

Power LDMOS transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 600 960 MHz
PL(1dB) nominal output power at 1 dB gain compression 160 W
Test signal: Pulsed, class-AB
VDS drain-source voltage 860 MHz [0] 28 V
Gp power gain 860 MHz [0] 20 dB
ηD drain efficiency 860 MHz [0] 62 %
IDq quiescent drain current 860 MHz [0] 100 mA

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLP7G10S-160P HSOP4F
(SOT1223-2)
sot1223-2_po Reel 13" Q1/T1 in Drypack Active Standard Marking BLP7G10S-160PY
(9349 601 91518)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 G1 gate 1
2 G2 gate 2
3 D2 drain 2
4 D1 drain 1
5 SOURCE source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLP7G10S-160P 9349 601 91518 BLP7G10S-160PY RFMW Buy Request samples
DigiKey Buy

Design support

Title Type Date
PCB Design BLP7G10S-160P (Data sheet) Design support 2018-09-06