Power LDMOS transistor

A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (HF to 600 MHz)
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)


  • Industrial, scientific and medical applications
  • Broadcast transmitter applications


All application notes
All documentation

All documents

Design tool

RF Power Lifetime Calculator


Power LDMOS transistor



Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 600 MHz
PL(1dB) nominal output power at 1 dB gain compression 350 W
Test signal: Pulsed RF
Gp power gain PL = 350 W [0] 26.5 27.5 dB
RLin input return loss PL = 350 W [0] -10 dB
ηD drain efficiency PL = 350 W [0] 71 75 %

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
sot1224-2_po.pdf Reel 13" Q1/T1 in Drypack Active Standard Marking BLP05H6350XRGY
(9349 600 24518)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 G2 gate 2
2 G1 gate1
3 D1 drain1
4 D2 drain2
5 S source


Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLP05H6350XRG BLP05H6350XRGY BLP05H6350XRG 3 3
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLP05H6350XRG 9349 600 24518 BLP05H6350XRGY DigiKey Buy Request samples

Design support

Title Type Date
PCB Design BLP05H6350XR(G) (Data sheet) Design support 2017-08-24