Power LDMOS transistor

A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

Features and benefits

  • Easy power control
  • Integrated double sided ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (HF to 600 MHz)
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • Industrial, scientific and medical applications
  • Broadcast transmitter applications

Downloads

Datasheet
All models
All documentation

All documents

Design tool

RF Power Lifetime Calculator

Transistor:
BLF182XRS

Power LDMOS transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 600 MHz
PL(1dB) nominal output power at 1 dB gain compression 250 W
Test signal: Pulsed RF
Gp power gain PL = 250 W; VDS = 50 V [0] 26.8 28 dB
RLin input return loss PL = 250 W [0] -12 -9 dB
ηD drain efficiency PL = 250 W [0] 72 75 %

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF182XRS CDFM4
(SOT1121B)
sot1121b_po Bulk Pack Active Standard Marking BLF182XRSU
(9340 692 26112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLF182XRS BLF182XRSU BLF182XRS Always Pb-free 1 1
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF182XRS 9340 692 26112 BLF182XRSU RFMW Buy Request samples
DigiKey Buy

Documentation

Title Type Date
Power LDMOS transistor Data sheet 2016-01-03

Design support