Power LDMOS transistor

A 1900 W extremely rugged LDMOS power transistor for industrial pulsed applications in the HF to 150 MHz band.

Features and benefits

  • Easy power control
  • Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
  • Excellent ruggedness VSWR > 65 : 1
  • High efficiency
  • Excellent thermal stability
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)


  • Industrial, scientific and medical applications


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RF Power Lifetime Calculator


Power LDMOS transistor



Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1 150 MHz
PL(1dB) nominal output power at 1 dB gain compression 1900 W
Test signal: Pulsed RF
VDS drain-source voltage 108 MHz 50 V
Gp power gain 108 MHz 26 dB
ηD drain efficiency 108 MHz 72.5 %

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
sot539b_po Bulk Pack Active Standard Marking BLF189XRBSU
(9349 600 79112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source


Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLF189XRBS BLF189XRBSU BLF189XRBS Always Pb-free 1 1
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF189XRBS 9349 600 79112 BLF189XRBSU RFMW Buy Request samples
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Design support

Title Type Date
PCB Design BLF189XRB(S) (Data sheet) Design support 2017-10-06
BLF189XRB ADS-2016 Simulation model 2018-11-28