This product is not recommended for design-in.
The recommended type is: BLF13H9L750P

Power LDMOS transistor

250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Internally matched for ease of use
  • Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC


  • Industrial, scientific and medical applications


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All documentation

All documents

Design tool

RF Power Lifetime Calculator


Power LDMOS transistor



Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1300 1300 MHz
PL(1dB) nominal output power at 1 dB gain compression 250 W
Test signal: CW
Gp power gain PL = 250 W; VDS = 50 V 15 17 dB
RLin input return loss PL = 250 W; VDS = 50 V; IDq = 100 mA -30 -20 dB
ηD drain efficiency PL = 250 W; VDS = 50 V; f = 1300 MHz; IDq = 100 mA 52 56 %
PL output power 250 W
VDS drain-source voltage PL = 250 W 50 V

Package / Packing

All type numbers in the table below are not recommended for design-in.

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
sot1121a_po Bulk Pack Active Standard Marking BLF6G13L-250P,112
(9340 651 24112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source


All type numbers in the table below are not recommended for design-in.

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLF6G13L-250P BLF6G13L-250P,112 BLF6G13L-250P Always Pb-free 1 1
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF6G13L-250P 9340 651 24112 BLF6G13L-250P,112 RFMW Buy Request samples
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