Power LDMOS transistor

A 1700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band.

Features and benefits

  • Easy power control
  • Integrated dual sided ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (HF to 500 MHz)
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)


  • Industrial, scientific and medical applications
  • Broadcast transmitter applications


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Design tool

RF Power Lifetime Calculator


Power LDMOS transistor



Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1 500 MHz
PL(1dB) nominal output power at 1 dB gain compression 1700 W
Test signal: Pulsed RF
VDS drain-source voltage 108 MHz 50 V
Gp power gain 108 MHz 26.2 dB
ηD drain efficiency 108 MHz 74 %

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
sot539b_po Bulk Pack Active Standard Marking BLF189XRASU
(9349 600 86112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source


Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLF189XRAS BLF189XRASU BLF189XRAS Always Pb-free 1 1
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF189XRAS 9349 600 86112 BLF189XRASU DigiKey Buy Request samples


Title Type Date
Power LDMOS transistor Data sheet 2017-11-06

Design support

Title Type Date
PCB Design BLF189XRA(S) (Data sheet) Design support 2017-11-07
BLF189XRA ADS-2016 Simulation model 2018-11-05