This product is not recommended for design-in.
The recommended type is: BLF978P

Power LDMOS transistor

A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (10 MHz to 500 MHz)
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances


  • Industrial, scientific and medical applications
  • Broadcast transmitter applications


All application notes
All models
All documentation

All documents

Design tool

RF Power Lifetime Calculator


Power LDMOS transistor



Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 500 MHz
PL(1dB) nominal output power at 1 dB gain compression 1200 W
Test signal: CW
Gp power gain VDS = 50 V; PL = 1200 W 26 dB
ηD drain efficiency VDS = 50 V; f = 108 MHz; IDq = 40 mA; PL = 1200 W 75 %
PL output power 1200 W

Package / Packing

All type numbers in the table below are not recommended for design-in.

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF578 SOT539A
sot539a_po Bulk Pack Active Standard Marking BLF578,112
(9340 631 55112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S souce


All type numbers in the table below are not recommended for design-in.

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLF578 BLF578,112 BLF578 Always Pb-free 1 1
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF578 9340 631 55112 BLF578,112 DigiKey Buy Request samples