Power LDMOS transistor

A 1700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band.

Features and benefits

  • Easy power control
  • Integrated dual sided ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (HF to 500 MHz)
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • Industrial, scientific and medical applications
  • Broadcast transmitter applications

Downloads

Datasheet
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Design tool

RF Power Lifetime Calculator

Transistor:
BLF189XRA

Power LDMOS transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1 500 MHz
PL(1dB) nominal output power at 1 dB gain compression 1700 W
Test signal: Pulsed RF
VDS drain-source voltage 108 MHz 50 V
Gp power gain 108 MHz 26.2 dB
ηD drain efficiency 108 MHz 74 %

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF189XRA SOT539A
(SOT539A)
sot539a_po Bulk Pack Active Standard Marking BLF189XRAU
(9349 600 85112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLF189XRA BLF189XRAU BLF189XRA Always Pb-free 1 1
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF189XRA 9349 600 85112 BLF189XRAU DigiKey Buy Request samples
RFMW Buy

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