BLP10H660P
Download datasheetThis device has been transferred from Ampleon to Flip Electronics.
Power LDMOS transistor
A 60 W LDMOS power transistor for broadcast and industrial applications in the HF to 1000 MHz band.
Features and benefits
- Easy power control
- Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (HF to 1000 MHz)
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Applications
- Industrial, scientific and medical applications
- Broadcast transmitter application
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 10 | 1000 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 60 | W | |||
| Test signal: Pulsed RF | ||||||
| VDS | drain-source voltage | 720 MHz | 50 | V | ||
| Gp | power gain | 720 MHz | 18 | dB | ||
| ηD | drain efficiency | 720 MHz | 72 | % | ||
| PL | load power | 720 MHz | 60 | W | ||
Package / Packing
| Type number |
Package type, (Package outline) |
Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| BLP10H660P | OMP-780 (SOT1223-2) |
sot1223-2_po | Reel 13" Q1/T1 in Drypack | Transferred | Standard Marking |
BLP10H660PY (9349 600 04518) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | G2 | gate 2 |
|
|
| 2 | G1 | gate1 | ||
| 3 | D1 | drain1 | ||
| 4 | D2 | drain2 | ||
| 5 | S | source [0] |
Ordering & availability
| Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
|---|---|---|---|---|---|
| BLP10H660P | 9349 600 04518 | BLP10H660PY | Flip Electronics | Buy | Not available |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Mounting and soldering of RF transistors in overmolded plastic packages | Application note | 2025-02-03 | |
| Power LDMOS transistor | Data sheet | 2016-12-20 | |
| RF power solutions for ISM, broadcast, navigation and safety radio applications | Brochure | 2025-06-03 | |
| RF power application reports for ISM, broadcast, navigation and safety radio applications | Brochure | 2025-06-12 | |
| Packages for RF power transistors | Leaflet | 2025-06-20 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| BLP10H660P Model for ADS 2016 (Keysight Advanced Design System) | Simulation model | 2017-04-19 | |
| Printed-Circuit Board (PCB) BLP10H660P(G) (Data sheet) | Design support | 2017-06-27 | |
| Model Library for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Model Library Manual for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Simulation Example for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 |