This device has been transferred from Ampleon to Rochester Electronics.

HF/VHF power MOS transistor

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range. The transistor has a 4-lead, SOT123A flange package, with a ceramic cap. All leads are isolated from the flange.

Features and benefits

  • High power gain
  • Low intermodulation distortion
  • Easy power control
  • Good thermal stability
  • Withstands full load mismatch
  • Gold metallization ensures excellent reliability

Applications

  • Large signal amplifier applications in the HF/VHF frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1 108 MHz
PL(1dB) nominal output power at 1 dB gain compression 30 W
Test signal: CW
Gp power gain PL = 30 W; VDS = 50 V; f = 108 MHz; IDq = 30 mA 20 dB
ηD drain efficiency VDS = 50 V; f = 108 MHz; IDq = 30 mA 65 %
PL output power 30 W

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF175 CRFM4
(SOT123A)
sot123a_po Bulk Pack Transferred Standard Marking BLF175,112
(9339 397 80112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 S souce
3 G gate
4 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF175 9339 397 80112 BLF175,112 Rochester Electronics Buy Not available

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF175 9339 397 80112 BLF175,112 Rochester Electronics Buy Not available

Design support

Title Type Date
BLF175 50V 150mA S-parameter Data S-parameter 2012-06-08
BLF175 25V 150mA S-parameter Data S-parameter 2012-06-08