BLF6G15LS-250PBRN
Download datasheetThis device has been transferred from Ampleon to Flip Electronics.
BLF6G15LS-250PBRN
Download datasheetThis device has been transferred from Ampleon to Flip Electronics.
Power LDMOS transistor
250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz.
Features and benefits
- Easy power control
- Integrated ESD protection
- Enhanced ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (1450 MHz to 1550 MHz)
- Internally matched for ease of use
- Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
- Intergrated current sense
Applications
- RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA
- Multi carrier applications in the 1450 MHz to 1550 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1450 | 1550 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 250 | W | |||
| Test signal: 2-c W-CDMA | ||||||
| Gp | power gain | PL(AV) = 60 W; VDS = 28 V | 16.5 | 18.5 | dB | |
| RLin | input return loss | PL(AV) = 60 W; VDS = 28 V; IDq = 1410 mA | -11 | -7 | dB | |
| ηD | drain efficiency | PL(AV) = 60 W; VDS = 28 V; 1476 MHz < f < 1511 MHz; IDq = 1410 mA | 31 | 34 | % | |
| PL(AV) | average output power | 60 | W | |||
| ACPR | adjacent channel power ratio | PL(AV) = 60 W; VDS = 28 V; 1476 MHz < f < 1511 MHz; IDq = 1410 mA | -30 | -27 | dBc | |
Package / Packing
| Type number |
Package type, (Package outline) |
Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| BLF6G15LS-250PBRN | ACC-1230 (SOT1110B) |
sot1110b_po | Reel 13" Q1/T1 | Transferred | Standard Marking |
BLF6G15LS-250PBRN: (9340 643 02118) |
| Bulk Pack | Transferred | Standard Marking |
BLF6G15LS-250PBRN, (9340 643 02112) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain1 |
|
|
| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | source [0] | ||
| 6 | SD | sense drain | ||
| 7 | SD | sense drain | ||
| 8 | SG | sense gate | ||
| 9 | SG | sense gate |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| 1.5 GHz Doherty power amplifier for base station applications using the BLF6G15L-250PBRN | Application note | 2015-12-07 | |
| Power LDMOS transistor | Data sheet | 2015-12-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2025-02-03 | |
| Packages for RF power transistors | Leaflet | 2025-06-20 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2025-08-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLF6G15L-250PBRN (AN10923) | Design support | 2012-02-24 |