This device has been transferred from Ampleon to Flip Electronics.

Power LDMOS transistor

A 500 W LDMOS power transistor for industrial applications at frequency of 915 MHz.

The BLF0910H6L500 and BLF0910H6LS500 are designed for high-power CW applications and are assembled in high performance ceramic packages.

Features and benefits

  • High efficiency
  • Easy power control
  • Excellent ruggedness
  • Integrated ESD protection
  • Designed for broadband operation (900 MHz to 930 MHz)
  • Internally input matched
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • Industrial applications in the 915 MHz ISM band

Downloads

Datasheet
All application notes
All documentation

All documents

Design tool

RF Power Lifetime Calculator

Transistor:
BLF0910H6LS500

Power LDMOS transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 900 930 MHz
PL(1dB) nominal output power at 1 dB gain compression 500 W
Test signal: CW
VDS drain-source voltage Pout = 500 W; f = 915 MHz 50 V
Gp power gain Pout = 500 W; f = 915 MHz 18 dB
ηD drain efficiency Pout = 500 W; f = 915 MHz 61 %

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF0910H6LS500 SOT502B
(SOT502B)
sot502b_po Bulk Pack Transferred Standard Marking BLF0910H6LS500U
(9349 600 56112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF0910H6LS500 9349 600 56112 BLF0910H6LS500U Flip Electronics Buy Not available

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF0910H6LS500 9349 600 56112 BLF0910H6LS500U Flip Electronics Buy Not available