BLF7G22LS-100P
Download datasheetThis device has been transferred from Ampleon to Flip Electronics.
BLF7G22LS-100P
Download datasheetThis device has been transferred from Ampleon to Flip Electronics.
Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Features and benefits
- Excellent ruggedness
- High efficiency
- Low Rth providing excellent thermal stability
- Designed for broadband operation (2000 MHz to 2200 MHz)
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
Applications
- RF power amplifiers for W-CDMA base stations
- Multicarrier applications in the 2000 MHz to 2200 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2000 | 2200 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 100 | W | |||
| Test signal: 2-c WCDMA | ||||||
| Gp | power gain | PL(AV) = 20 W; VDS = 28 V | 17.8 | 19.1 | dB | |
| RLin | input return loss | PL(AV) = 20 W; VDS = 28 V; IDq = 720 mA | -16 | -9 | dB | |
| ηD | drain efficiency | PL(AV) = 20 W; VDS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; IDq = 720 mA | 24 | 28.5 | % | |
| PL(AV) | average output power | 20 | W | |||
| ACPR5M | adjacent channel power ratio (5 MHz) | PL(AV) = 20 W; VDS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; IDq = 720 mA | -34 | -28 | dBc | |
Package / Packing
| Type number |
Package type, (Package outline) |
Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| BLF7G22LS-100P | ACC-780 (SOT1121B) |
sot1121b_po | Reel 13" Q1/T1 | Transferred | Standard Marking |
BLF7G22LS-100P,118 (9340 656 96118) |
| Bulk Pack | Transferred | Standard Marking |
BLF7G22LS-100P,112 (9340 656 96112) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain 1 |
|
|
| 2 | D2 | drain 2 | ||
| 4 | G1 | gate 1 | ||
| 5 | G2 | gate 2 | ||
| 5 | S | source [0] |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2015-12-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2025-02-03 | |
| Packages for RF power transistors | Leaflet | 2025-06-20 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2025-08-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLF7G22L(S)-100P (Data sheet) | Design support | 2012-02-24 |