UHF power LDMOS transistor

A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

Features and benefits

  • Easy power control
  • Excellent reliability
  • Integrated ESD protection
  • High power gain
  • High efficiency
  • Excellent ruggedness
  • Compliant to Directive 2002/95/EC, regarding RoHS


  • Communication transmitter applications in the UHF band
  • Industrial applications in the UHF band


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Design tool

RF Power Lifetime Calculator


UHF power LDMOS transistor



Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1 1000 MHz
PL(1dB) nominal output power at 1 dB gain compression 140 W
Test signal: CW
Gp power gain VDS = 50 V 20 21 dB
ηD drain efficiency VDS = 50 V; f = 860 MHz; IDq = 0.5 A 45 49 %
PL(PEP) peak envelope power VDS = 50 V 140 W
IMD3 third-order intermodulation distortion VDS = 50 V; IDq = 0.5 A -34 -30 dBc

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
sot467b_po Bulk Pack Active Standard Marking BLF881S,112
(9340 639 48112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source


Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLF881S BLF881S,112 BLF881S Always Pb-free 1 1
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF881S 9340 639 48112 BLF881S,112 DigiKey Buy Request samples

Design support

Title Type Date
PCB Design BLF881(S) (Data sheet) Design support 2012-02-24
PCB Design BLF881(S) (AN10945) Design support 2012-02-24
BLF881 ADS-2016 Simulation model 2017-01-04