Power LDMOS transistor

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (HF to 600 MHz)
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)


  • Industrial, scientific and medical applications
  • Broadcast transmitter applications


All documentation

All documents

Design tool

RF Power Lifetime Calculator


Power LDMOS transistor



Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 600 MHz
PL(1dB) nominal output power at 1 dB gain compression 1400 W
Test signal: Pulsed RF
Gp power gain VDS = 50 V; PL = 1400 W 23.2 24.4 dB
RLin input return loss VDS = 50 V; IDq = 40 mA; PL = 1400 W -21 -14 dB
ηD drain efficiency VDS = 50 V; f = 108 MHz; IDq = 40 mA; PL = 1400 W 69 73 %

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
sot1248c_po Reel 13" Q1/T1 Active Standard Marking BLF188XRGJ
(9340 680 41118)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source


Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLF188XRG BLF188XRGJ BLF188XRG Always Pb-free 1 1
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF188XRG 9340 680 41118 BLF188XRGJ DigiKey Buy Request samples

Design support

Title Type Date
PCB Design BLF188XRG (Data sheet) Design support 2014-12-05