BLF1046

BLF1046

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This device has been transferred from Ampleon to Rochester Electronics.

This device has been transferred from Ampleon to Rochester Electronics.

UHF power LDMOS transistor

Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange.

Features and benefits

  • High power gain
  • Easy power control
  • Excellent ruggedness
  • Source on underside eliminates DC isolators, reducing common mode inductance
  • Designed for broadband operation (HF to 1 GHz)

Applications

  • Communication transmitter applications in the UHF frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1 1000 MHz
PL(1dB) nominal output power at 1 dB gain compression 45 W
Test signal: CW
Gp power gain VDS = 26 V 14 dB
ηD drain efficiency VDS = 26 V; f = 960 MHz; IDq = 300 mA 46 %
PL output power 45 W

Package / Packing

Type number Package type,
(Package outline)
Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF1046 SOT467
(SOT467C)
sot467c_po Reel 11¼" Q1/T1 in LargePack Transferred Standard Marking BLF1046,135
(9340 553 84135)
Bulk Pack Transferred Standard Marking BLF1046,112
(9340 553 84112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source [0]

Design support

Title Type Date
BLF1046 28 V 300 mA S-parameter data S-parameter 2012-07-22