BLF6G20LS-140
Download datasheetThis device has been transferred from Ampleon to Flip Electronics.
Power LDMOS transistor
140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Features and benefits
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (1800 MHz to 2000 MHz)
- Internally matched for ease of use
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
Applications
- RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations
- Multicarrier applications in the 1800 MHz to 2000 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1800 | 2000 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 140 | W | |||
| Test signal: 2-c W-CDMA | ||||||
| Gp | power gain | PL(AV) = 35.5 W; VDS = 28 V | 15.5 | 16.5 | dB | |
| RLin | input return loss | PL(AV) = 35.5 W; VDS = 28 V; IDq = 1000 mA | -8 | -5 | dB | |
| ηD | drain efficiency | PL(AV) = 35.5 W; VDS = 28 V; 1930 MHz < f < 1990 MHz; IDq = 1000 mA | 27 | 30 | % | |
| PL(AV) | average output power | 35.5 | W | |||
| IMD3 | third-order intermodulation distortion | PL(AV) = 35.5 W; VDS = 28 V; IDq = 1000 mA | -37 | -35 | dBc | |
| ACPR | adjacent channel power ratio | PL(AV) = 35.5 W; VDS = 28 V; 1930 MHz < f < 1990 MHz; IDq = 1000 mA | -40 | -38 | dBc | |
Package / Packing
| Type number |
Package type, (Package outline) |
Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| BLF6G20LS-140 | ACC-780 (SOT502B) |
sot502b_po | Reel 13" Q1/T1 | Transferred | Standard Marking |
BLF6G20LS-140,118 (9340 608 97118) |
| Bulk Pack | Transferred | Standard Marking |
BLF6G20LS-140,112 (9340 608 97112) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |
|
|
| 2 | G | gate | ||
| 3 | S | source [0] |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2015-12-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2025-02-03 | |
| Packages for RF power transistors | Leaflet | 2025-06-20 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2025-08-08 |
No documentation available.