The RF Power Lifetime Calculator has been designed to assist our customers in estimating the LDMOS device reliability in years. The returned results are represented by MTF (Median-Time-To-Failure, the time that 50% of the population has failed) as a function of Junction Temperature (TJ) of the device, assuming electromigration as the wear-out failure mechanism. For two-stage MMICs the lifetime is determined by (and therefore only calculated for) the second/final stage. The tool covers four generations of RF power transistors (Gen6, Gen7, Gen8 and Gen9), available in the current product portfolio of Ampleon.
For GaN , the returned results are represented by MTF (Median-Time-To-Failure, the time that 50% of the population has failed) as a function of Surface Temperature (Ts) of the device, assuming Schottky and Ohmic degradation as the wear-out failure mechanisms specific for GaN HEMT devices.
- Wide LDMOS Product Selection: you can quickly select RF Power transistors of Gen6, Gen7, Gen8 and Gen9 LDMOS and GaN, available in the current product portfolio of Ampleon.
- Operating Conditions Input: You can either specify the desired input values for Case Temperature, Drain Voltage, Drain Current, Input and Output power, or use the default values defined per product datasheet.
- Validity Check: to obtain meaningful results, input values are restricted according to test and physical capabilities of our products.
- Lifetime Calculation: the key results are represented by Median-Time-To-Failure (MTF, 50%) as a function of Junction Temperature (Tj). Drain Efficiency (ηd) and Power-added Efficiency (ηPAE) are calculated for the overall check.