BLC10G18XS-551AV
Download datasheetPower LDMOS transistor
550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.
Features and benefits
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent digital pre-distortion capability
- Internally matched for ease of use
- Integrated ESD protection
- For RoHS compliance see the product details on the Ampleon website
Applications
- RF power amplifiers for base stations and multi carrier applications in the 1805 MHz to 1880 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1805 | 1880 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 620 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| VDS | drain-source voltage | PL(AV) = 115 W [0] | 32 | V | ||
| Gp | power gain | PL(AV) = 115 W [0] | 15.1 | 16.1 | dB | |
| ηD | drain efficiency | PL(AV) = 115 W [0] | 46 | 50 | % | |
| RLin | input return loss | PL(AV) = 115 W [0] | -11 | -7 | dB | |
| ACPR | adjacent channel power ratio | PL(AV) = 115 W [0] | -32 | -27 | dBc | |
| PARO | output peak-to-average ratio | PL(AV) = 148 W [1] | 6.3 | 6.8 | dB | |
| PL(M) | peak output power | PL(AV) = 148 W [1] | 620 | 705 | W | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number |
Package type, (Package outline) |
Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| BLC10G18XS-551AV | ACP-1230 (SOT1258-5) |
sot1258-5_po | Reel 13" Q1/T1 in Drypack | Discontinued | Standard Marking |
BLC10G18XS-551AVY (9349 602 08518) |
| Tray, NonBakeable, Multiple in Drypack | Discontinued | Standard Marking |
BLC10G18XS-551AVZ (9349 602 08517) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D2P | drain2 (peak) |
|
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| 2 | D1M | drain1 (main) | ||
| 3 | G1M | gate1 (main) | ||
| 4 | G2P | gate2 (peak) | ||
| 5 | S | source [2] | ||
| 6 | VDP | video decoupling (peak) | ||
| 7 | VDM | video decoupling (main) |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2020-03-23 | |
| Biasing asymmetrical Doherty RF power transistor | Other type | 2016-08-31 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2025-02-03 | |
| Packages for RF power transistors | Leaflet | 2025-06-20 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2025-08-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLC10G18XS-551AV (Data sheet) | Design support | 2020-03-23 |