LDMOS 3-stage integrated Doherty MMIC

The B10G3438N55D is a 3-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as a final stage for small cells and massive MIMO applications in the frequency range from 3400 MHz to 3800 MHz. Available in PQFN outline.

Features and benefits

  • Integrated input splitter
  • Integrated output combiner
  • 30 Ω output impedance thanks to integrated pre-match
  • Very high efficiency thanks to asymmetry
  • Designed for wideband operation (frequency 3400 MHz to 3800 MHz)
  • Independent control of carrier and peaking bias
  • Integrated ESD protection
  • Source impedance 50 Ω; high power gain
  • For RoHS compliance see the product details on the Ampleon website

Downloads

Datasheet
All application notes
All documentation

All documents

Design tool

RF Power Lifetime Calculator

Transistor:
B10G3438N55D

LDMOS 3-stage integrated Doherty MMIC

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 3400 3800 MHz
PL(3dB) nominal output power at 3 dB gain compression 55 W
Test signal: Pulsed CW
VDS drain-source voltage [0] 28 V
Gp power gain PL = 7.94 W (39 dBm) [0] 31.1 33.7 36.1 dB
ηD drain efficiency PL = 7.94 W (39 dBm) [0] 30 37.3 %
ηD drain efficiency PL = PL(3dB) [0] 36 42 %
RLin input return loss [0] -10 dB

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
B10G3438N55D PQFN20
(SOT1462-1)
sot1462-1_po TR13; 500-fold; 16 mm; dry pack Active Standard Marking B10G3438N55DZ
(9349 603 61515)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 VDS2/decoupling drain-source voltage of final stages / video-lead for decoupling
2 d.n.c./GND do not connect or GND
3 n.c. not connected
4 VGS(carr) gate-source voltage of carrier
5 VGS(peak) gate-source voltage of peaking
6 VDS1 drain-source voltage of driver stages
7 GND RF ground
8 RF_IN RF input
9 GND RF ground
10 VDS1 drain-source voltage of driver stages
11 VGS(peak) gate-source voltage of peaking
12 VGS(carr) gate-source voltage of carrier
13 n.c. not connected
14 d.n.c./GND do not connect or GND
15 VDS2/decoupling drain-source voltage of final stages / video-lead for decoupling
16 RF_OUT RF output
17 RF_OUT RF output
18 RF_OUT RF output
19 RF_OUT RF output
20 RF_OUT RF output
flange GND RF ground

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
B10G3438N55D 9349 603 61515 B10G3438N55DZ DigiKey Buy Request samples
RFMW Buy

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
B10G3438N55D 9349 603 61515 B10G3438N55DZ DigiKey Buy Request samples
RFMW Buy

Design support

Title Type Date
Printed-Circuit Board (PCB) B10G3438N55D (Data sheet) Design support 2021-10-07