BLF7G22LS-250P
Download datasheetThis device has been transferred from Ampleon to Flip Electronics.
BLF7G22LS-250P
Download datasheetThis device has been transferred from Ampleon to Flip Electronics.
Power LDMOS transistor
250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.
Features and benefits
- Excellent ruggedness
- High efficiency
- Internally matched for ease of use
- Integrated ESD protection
- Designed for low memory effects providing excellent pre-distortability
- Low Rth providing excellent thermal stability
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
Applications
- RF power amplifiers for W-CDMA base stations
- Multicarrier applications in the 2110 MHz to 2170 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2110 | 2170 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 250 | W | |||
| Test signal: 2-c W-CDMA | ||||||
| Gp | power gain | PL(AV) = 70 W; VDS = 28 V | 17 | 18.5 | dB | |
| RLin | input return loss | PL(AV) = 70 W; VDS = 28 V; IDq = 1900 mA | -15 | -5 | dB | |
| ηD | drain efficiency | PL(AV) = 70 W; VDS = 28 V; IDq = 1900 mA | 27 | 31 | % | |
| PL(AV) | average output power | 70 | W | |||
| ACPR | adjacent channel power ratio | PL(AV) = 70 W; VDS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; IDq = 1900 mA | -30 | -25 | dBc | |
Package / Packing
| Type number |
Package type, (Package outline) |
Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| BLF7G22LS-250P | ACC-1230 (SOT539B) |
sot539b_po | Reel 13" Q1/T1 | Transferred | Standard Marking |
BLF7G22LS-250P,118 (9340 646 91118) |
| Bulk Pack | Transferred | Standard Marking |
BLF7G22LS-250P,112 (9340 646 91112) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | DRAIN1 | drain 1 |
|
|
| 2 | DRAIN2 | drain 2 | ||
| 4 | GATE1 | gate 1 | ||
| 5 | GATE2 | gate 2 | ||
| 5 | SOURCE | source [0] |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2015-12-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2025-02-03 | |
| Packages for RF power transistors | Leaflet | 2025-06-20 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2025-08-08 |
No documentation available.