B10G1819N10DL
Download datasheetB10G1819N10DL
Download datasheetLDMOS 2-stage integrated Doherty MMIC
The B10G1819N10DL is a 2-stage 10 W fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner, and output matching are integrated in a single package. This multiband device is perfectly suited as a general-purpose device in the frequency range from 1805 MHz to 1880 MHz. Available in a 7 mm x 7 mm LGA outline.
Features and benefits
- Integrated input splitter
- Integrated output combiner
- Very high efficiency
- Designed to operate in the frequency range from 1805 MHz to 1880 MHz
- Independent control of carrier and peaking bias
- Integrated ESD protection
- Excellent thermal stability
- High power gain, input and output matched to impedance 50 Ω
- For RoHS compliance see the product details on the Ampleon website
Applications
- RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA, LTE and NR small cell base stations in the 1805 MHz to 1880 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1805 | 1880 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 10 | W | |||
| Test signal: CW pulsed | ||||||
| VDS | drain-source voltage | [0] | 26 | V | ||
| Gp | power gain | [0] | 29 | 32 | dB | |
| ηD | drain efficiency | [0] | 46 | 52 | % | |
| RLin | input return loss | [0] | -20 | -10 | dB | |
Package / Packing
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| B10G1819N10DL | LGA-7x7-20-2 (LGA-7x7-20-2) |
lga-7x7-20-2_po | TR13; 3000-fold; 16 mm; dry pack | Active | Standard Marking |
B10G1819N10DLX (9349 607 06525) |
|
| TR13; 1000-fold; 16 mm; dry pack | Active | Standard Marking |
B10G1819N10DLZ (9349 607 06515) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | VGS_P | gate-source voltage of peaking |
|
|
| 2 | NC | not connected | ||
| 3 | GND | ground | ||
| 4 | RFin | RF input | ||
| 5 | GND | ground | ||
| 6 | GND | ground | ||
| 7 | VDS1 | drain-source voltage of driver stages | ||
| 8 | NC | not connected | ||
| 9 | VDS2 | drain-source voltage of final stages | ||
| 10 | GND | ground | ||
| 11 | GND | ground | ||
| 12 | RFout | RF output | ||
| 13 | GND | ground | ||
| 14 | NC | not connected | ||
| 15 | NC | not connected | ||
| 16 | GND | ground | ||
| 17 | NC | not connected | ||
| 18 | GND | ground | ||
| 19 | VDS1 | drain-source voltage of driver stages | ||
| 20 | VGS_C | gate-source voltage of carrier | ||
| 21 | GND | RF ground |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| LDMOS 2-stage integrated Doherty MMIC | Data sheet | 2024-02-20 | |
| Mounting and soldering of RF transistors in overmolded plastic packages | Application note | 2023-08-14 | |
| Packages for RF Power Transistors | Leaflet | 2024-03-25 | |
| LDMOS Ruggedness Reliability | Other type | 2017-03-28 | |
| Efficiency Improvement of LDMOS Transistors for Base Stations: Towards the Theoretical Limit | Other type | 2017-05-02 | |
| LDMOS Technology for RF Power Amplifiers | Other type | 2017-05-03 | |
| RF Power Solutions for Wireless Infrastructure | Brochure | 2024-04-04 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) B10G1819N10DL (Data sheet) | Design support | 2024-02-20 |