BLC9G27XS-380AVT
Download datasheetPower LDMOS transistor
380 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.
Features and benefits
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Decoupling leads to enable improved video bandwidth
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Applications
- RF power amplifier for W-CDMA base stations and multi carrier applications in the 2496 MHz to 2690 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2496 | 2690 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 330 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| VDS | drain-source voltage | 2620 to 2690 MHz [0] | 30 | V | ||
| Gp | power gain | 2620 to 2690 MHz [0] | 15.5 | dB | ||
| ηD | drain efficiency | 2620 to 2690 MHz [0] | 43 | % | ||
| ACPR | adjacent channel power ratio | 2620 to 2690 MHz [0] | -33 [1] | dBc | ||
Package / Packing
All type numbers in the table below are discontinued.
| Type number |
Package type, (Package outline) |
Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| BLC9G27XS-380AVT | ACP-1230 (SOT1258-4) |
sot1258-4_po | Reel 13" Q1/T1 in Drypack | Discontinued | Standard Marking |
BLC9G27XS-380AVTY (9349 601 02518) |
| Tray, NonBakeable, Multiple in Drypack | Discontinued | Standard Marking |
BLC9G27XS-380AVTZ (9349 601 02517) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D2P | drain2 (peak) |
|
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| 2 | D1M | drain1 (main) | ||
| 3 | G1M | gate1 (main) | ||
| 4 | G2P | gate2 (peak) | ||
| 5 | S | source [2] | ||
| 6 | VDP | video decoupling (peak) | ||
| 7 | VDM | video decoupling (main) |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2017-11-24 | |
| Biasing asymmetrical Doherty RF power transistor | Other type | 2016-08-31 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2025-02-03 | |
| Packages for RF power transistors | Leaflet | 2025-06-20 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2025-08-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLC9G27XS-380AVT (Data sheet) | Design support | 2017-10-05 |